Stacking fault energy in some single crystals
J. Semicond. 2012, 33(6): 062001
doi: 10.1088/1674-4926/33/6/062001
Simultaneous quality improvement of the roughness and refractive index of SiC thin films
J. Semicond. 2012, 33(6): 063001
doi: 10.1088/1674-4926/33/6/063001
Tungsten oxide nanostructures: controllable growth and field emission
J. Semicond. 2012, 33(6): 063002
doi: 10.1088/1674-4926/33/6/063002
The design of electroabsorption modulators with negative chirp and very low insertion loss
J. Semicond. 2012, 33(6): 064001
doi: 10.1088/1674-4926/33/6/064001
A 150% enhancement of PMOSFET mobility using hybrid orientation
J. Semicond. 2012, 33(6): 064002
doi: 10.1088/1674-4926/33/6/064002
Hot-carrier reliability in OPTVLD-LDMOS
J. Semicond. 2012, 33(6): 064003
doi: 10.1088/1674-4926/33/6/064003
Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current
J. Semicond. 2012, 33(6): 064004
doi: 10.1088/1674-4926/33/6/064004
Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process
J. Semicond. 2012, 33(6): 064005
doi: 10.1088/1674-4926/33/6/064005
Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit
J. Semicond. 2012, 33(6): 064006
doi: 10.1088/1674-4926/33/6/064006
J. Semicond. 2012, 33(6): 064007
doi: 10.1088/1674-4926/33/6/064007
J. Semicond. 2012, 33(6): 064008
doi: 10.1088/1674-4926/33/6/064008
A 2.5 mW 370 mV/pF high linearity stray-immune symmetrical readout circuit for capacitive sensors
J. Semicond. 2012, 33(6): 065001
doi: 10.1088/1674-4926/33/6/065001
A novel circuit architecture for fourth subharmonic mixers
J. Semicond. 2012, 33(6): 065002
doi: 10.1088/1674-4926/33/6/065002
A 6th order wideband active-RC LPF for LTE application
J. Semicond. 2012, 33(6): 065003
doi: 10.1088/1674-4926/33/6/065003
Low-power digital ASIC for on-chip spectral analysis of low-frequency physiological signals
J. Semicond. 2012, 33(6): 065004
doi: 10.1088/1674-4926/33/6/065004
Adaptive IF selection and IQ mismatch compensation in a low-IF GSM receiver
J. Semicond. 2012, 33(6): 065005
doi: 10.1088/1674-4926/33/6/065005
High voltage generator circuit with low power and high efficiency applied in EEPROM
J. Semicond. 2012, 33(6): 065006
doi: 10.1088/1674-4926/33/6/065006
A fast combination calibration of foreground and background for pipelined ADCs
J. Semicond. 2012, 33(6): 065007
doi: 10.1088/1674-4926/33/6/065007
A 200 mV low leakage current subthreshold SRAM bitcell in a 130 nm CMOS process
J. Semicond. 2012, 33(6): 065008
doi: 10.1088/1674-4926/33/6/065008
An AES chip with DPA resistance using hardware-based random order execution
J. Semicond. 2012, 33(6): 065009
doi: 10.1088/1674-4926/33/6/065009
Analysis and modeling of on-chip transformers under two ground conditions
J. Semicond. 2012, 33(6): 065010
doi: 10.1088/1674-4926/33/6/065010
Anodic bonding using a hybrid electrode with a two-step bonding process
J. Semicond. 2012, 33(6): 066001
doi: 10.1088/1674-4926/33/6/066001
J. Semicond. 2012, 33(6): 066002
doi: 10.1088/1674-4926/33/6/066002
H-plasma-assisted aluminum induced crystallization of amorphous silicon
J. Semicond. 2012, 33(6): 066003
doi: 10.1088/1674-4926/33/6/066003
Rapid thermal annealing effects on vacuum evaporated ITO for InGaN/GaN blue LEDs
J. Semicond. 2012, 33(6): 066004
doi: 10.1088/1674-4926/33/6/066004