Archive

Volume 33, Issue 6, Jun 2012

• SEMICONDUCTOR PHYSICS

  Stacking fault energy in some single crystals

  Aditya M.Vora

  J. Semicond.  2012, 33(6): 062001
  doi: 10.1088/1674-4926/33/6/062001

• SEMICONDUCTOR MATERIALS

  Simultaneous quality improvement of the roughness and refractive index of SiC thin films

  Gh. Sareminia, H. Simchi, A. Ostovari, L. Lavasanpour

  J. Semicond.  2012, 33(6): 063001
  doi: 10.1088/1674-4926/33/6/063001

  Tungsten oxide nanostructures: controllable growth and field emission

  Yue Shuanglin, Xu Tingting, Li Wei, Yan Ji, Yi He

  J. Semicond.  2012, 33(6): 063002
  doi: 10.1088/1674-4926/33/6/063002

• SEMICONDUCTOR DEVICES

  The design of electroabsorption modulators with negative chirp and very low insertion loss

  Kambiz Abedi

  J. Semicond.  2012, 33(6): 064001
  doi: 10.1088/1674-4926/33/6/064001

  A 150% enhancement of PMOSFET mobility using hybrid orientation

  Tang Zhaohuan, Tan Kaizhou, Cui Wei, Zhang Jing, Zhong Yi, Xu Shiliu, Hao Yue, Zhang Heming, Hu Huiyong, Zhang Zhengfan, Hu Gangyi

  J. Semicond.  2012, 33(6): 064002
  doi: 10.1088/1674-4926/33/6/064002

  Hot-carrier reliability in OPTVLD-LDMOS

  Cheng Junji, Chen Xingbi

  J. Semicond.  2012, 33(6): 064003
  doi: 10.1088/1674-4926/33/6/064003

  Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current

  Gu Guodong, Cai Yong, Feng Zhihong, Liu Bo, Zeng Chunhong, Yu Guohao, Dong Zhihua, Zhang Baoshun

  J. Semicond.  2012, 33(6): 064004
  doi: 10.1088/1674-4926/33/6/064004

  Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process

  Yan Wei, Zhang Renping, Du Yandong, Han Weihua, Yang Fuhua

  J. Semicond.  2012, 33(6): 064005
  doi: 10.1088/1674-4926/33/6/064005

  Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit

  Ding Lili, Guo Hongxia, Chen Wei, Fan Ruyu

  J. Semicond.  2012, 33(6): 064006
  doi: 10.1088/1674-4926/33/6/064006

  Characterization of the nanosized porous structure of black Si solar cells fabricated via a screen printing process

  Tang Yehua, Zhou Chunlan, Wang Wenjing, Zhou Su, Zhao Yan, Zhao Lei, Li Hailing, Yan Baojun, Chen Jingwei, Fei Jianming, Cao Hongbin

  J. Semicond.  2012, 33(6): 064007
  doi: 10.1088/1674-4926/33/6/064007

  Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

  Xiao Wenbo, He Xingdao, Gao Yiqing, Zhang Zhimin, Liu Jiangtao

  J. Semicond.  2012, 33(6): 064008
  doi: 10.1088/1674-4926/33/6/064008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 2.5 mW 370 mV/pF high linearity stray-immune symmetrical readout circuit for capacitive sensors

  Zhou Kaimin, Wang Ziqiang, Zhang Chun, Wang Zhihua

  J. Semicond.  2012, 33(6): 065001
  doi: 10.1088/1674-4926/33/6/065001

  A novel circuit architecture for fourth subharmonic mixers

  Yao Changfei, Xu Conghai, Zhou Ming, Luo Yunsheng

  J. Semicond.  2012, 33(6): 065002
  doi: 10.1088/1674-4926/33/6/065002

  A 6th order wideband active-RC LPF for LTE application

  Wei Baoyue, Li Hongkun, Wang Yunfeng, Zhang Haiying

  J. Semicond.  2012, 33(6): 065003
  doi: 10.1088/1674-4926/33/6/065003

  Low-power digital ASIC for on-chip spectral analysis of low-frequency physiological signals

  Nie Zedong, Zhang Fengjuan, Li Jie, Wang Lei

  J. Semicond.  2012, 33(6): 065004
  doi: 10.1088/1674-4926/33/6/065004

  Adaptive IF selection and IQ mismatch compensation in a low-IF GSM receiver

  Zhang Cheng, Wang Lifang, Tan Xi, Min Hao

  J. Semicond.  2012, 33(6): 065005
  doi: 10.1088/1674-4926/33/6/065005

  High voltage generator circuit with low power and high efficiency applied in EEPROM

  Liu Yan, Zhang Shilin, Zhao Yiqiang

  J. Semicond.  2012, 33(6): 065006
  doi: 10.1088/1674-4926/33/6/065006

  A fast combination calibration of foreground and background for pipelined ADCs

  Sun Kexu, He Lenian

  J. Semicond.  2012, 33(6): 065007
  doi: 10.1088/1674-4926/33/6/065007

  A 200 mV low leakage current subthreshold SRAM bitcell in a 130 nm CMOS process

  Bai Na, Lü Baitao

  J. Semicond.  2012, 33(6): 065008
  doi: 10.1088/1674-4926/33/6/065008

  An AES chip with DPA resistance using hardware-based random order execution

  Yu Bo, Li Xiangyu, Chen Cong, Sun Yihe, Wu Liji, Zhang Xiangmin

  J. Semicond.  2012, 33(6): 065009
  doi: 10.1088/1674-4926/33/6/065009

  Analysis and modeling of on-chip transformers under two ground conditions

  Wei Jiaju, Wang Zhigong, Li Zhiqun, Tang Lu

  J. Semicond.  2012, 33(6): 065010
  doi: 10.1088/1674-4926/33/6/065010

• SEMICONDUCTOR TECHNOLOGY

  Anodic bonding using a hybrid electrode with a two-step bonding process

  Luo Wei, Xie Jing, Zhang Yang, Li Chaobo, Xia Yang

  J. Semicond.  2012, 33(6): 066001
  doi: 10.1088/1674-4926/33/6/066001

  Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process

  Chen Shan, Pan Tianhong, Li Zhengming, Jang Shi-Shang

  J. Semicond.  2012, 33(6): 066002
  doi: 10.1088/1674-4926/33/6/066002

  H-plasma-assisted aluminum induced crystallization of amorphous silicon

  Li Juan, Liu Ning, Luo Chong, Meng Zhiguo, Xiong Shaozhen, Hoi Sing Kwok

  J. Semicond.  2012, 33(6): 066003
  doi: 10.1088/1674-4926/33/6/066003

  Rapid thermal annealing effects on vacuum evaporated ITO for InGaN/GaN blue LEDs

  Ding Yan, Guo Weiling, Zhu Yanxu, Liu Jianpeng, Yan Weiwei

  J. Semicond.  2012, 33(6): 066004
  doi: 10.1088/1674-4926/33/6/066004

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