Archive

Volume 34, Issue 3, Mar 2013

• SEMICONDUCTOR PHYSICS

  Effects of interaction between defects on the uniformity of doping HfO₂-based RRAM:a first principle study

  Qiang Zhao, Maoxiu Zhou, Wei Zhang, Qi Liu, Xiaofeng Li, Ming Liu, Yuehua Dai

  J. Semicond.  2013, 34(3): 032001
  doi: 10.1088/1674-4926/34/3/032001

  Optical properties of GaAs

  J.O. Akinlami, A.O. Ashamu

  J. Semicond.  2013, 34(3): 032002
  doi: 10.1088/1674-4926/34/3/032002

• SEMICONDUCTOR MATERIALS

  Photoconductivity and surface chemical analysis of ZnO thin films deposited by solution-processing techniques for nano and microstructure fabrication

  V.K. Dwivedi, P. Srivastava, G. Vijaya Prakash

  J. Semicond.  2013, 34(3): 033001
  doi: 10.1088/1674-4926/34/3/033001

  Te vapor annealing of indium-doped CdMnTe crystals

  Jijun Zhang, Linjun Wang, Jiahua Min, Kaifeng Qin, Zhubin Shi, Xiaoyan Liang

  J. Semicond.  2013, 34(3): 033002
  doi: 10.1088/1674-4926/34/3/033002

• SEMICONDUCTOR DEVICES

  Nanoindentation on the doubler plane of KDP single crystal

  Xiaoguang Guo, Xiaoji Zhang, Xianzhao Tang, Dongming Guo, Hang Gao, Xiaoji Teng

  J. Semicond.  2013, 34(3): 034001
  doi: 10.1088/1674-4926/34/3/034001

  Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions

  Jiang Lu, Xiaoli Tian, Shuojin Lu, Hongyu Zhou, Yangjun Zhu, Zhengsheng Han

  J. Semicond.  2013, 34(3): 034002
  doi: 10.1088/1674-4926/34/3/034002

  A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer

  Qiuming Zhao, Qi Li, Ning Tang, Yongchang Li

  J. Semicond.  2013, 34(3): 034003
  doi: 10.1088/1674-4926/34/3/034003

  Simulation study on short channel double-gate junctionless field-effect transistors

  Meile Wu, Xiaoshi Jin, Rongyan Chuai, Xi Liu, Jong-Ho Lee

  J. Semicond.  2013, 34(3): 034004
  doi: 10.1088/1674-4926/34/3/034004

  A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors

  Shuai Wang, Ke Li, Yibo Jiang, Mifang Cong, Huan Du, Zhengsheng Han

  J. Semicond.  2013, 34(3): 034005
  doi: 10.1088/1674-4926/34/3/034005

  Research on the diamond MISFET

  Jianjun Zhou, Song Bai, Cen Kong, Xijiao Geng, Haiyan Lu, Yuechan Kong, Tangsheng Chen

  J. Semicond.  2013, 34(3): 034006
  doi: 10.1088/1674-4926/34/3/034006

  The design and test of MEMS piezoresistive ultrasonic sensor arrays

  Deqin Lian, Changde He, Hui Zhang, Jiaqi Yu, Kejing Yuan, Chenyang Xue

  J. Semicond.  2013, 34(3): 034007
  doi: 10.1088/1674-4926/34/3/034007

  Effects of seed layer on the performance of microcrystalline silicon germaniumsolar cells

  Yu Cao, Jianjun Zhang, Tianwei Li, Zhenhua Huang, Jun Ma, Xu Yang, Jian Ni, Xinhua Geng, Ying Zhao

  J. Semicond.  2013, 34(3): 034008
  doi: 10.1088/1674-4926/34/3/034008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A digitally calibrated CMOS RMS power detector for RF automatic gain control

  Taotao Yan, Hui Wang, Jinbo Li, Jianjun Zhou

  J. Semicond.  2013, 34(3): 035001
  doi: 10.1088/1674-4926/34/3/035001

  A saw-less direct conversion long term evolution receiver with 25% duty-cycle LO in 130 nm CMOS technology

  Siyuan He, Changhong Zhang, Liang Tao, Weifeng Zhang, Longyue Zeng, Wei Lü, Haijun Wu

  J. Semicond.  2013, 34(3): 035002
  doi: 10.1088/1674-4926/34/3/035002

  An 8-bit 100-MS/s digital-to-skew converter embedded switch with a 200-ps range for time-interleaved sampling

  Xiaoshi Zhu, Chixiao Chen, Jialiang Xu, Fan Ye, Junyan Ren

  J. Semicond.  2013, 34(3): 035003
  doi: 10.1088/1674-4926/34/3/035003

  A multi-path gated ring oscillator based time-to-digital converter in 65 nm CMOS technology

  Chen Jiang, Yumei Huang, Zhiliang Hong

  J. Semicond.  2013, 34(3): 035004
  doi: 10.1088/1674-4926/34/3/035004

  High linearity current communicating passive mixer employing a simple resistor bias

  Rongjiang Liu, Guiliang Guo, Yuepeng Yan

  J. Semicond.  2013, 34(3): 035005
  doi: 10.1088/1674-4926/34/3/035005

  A 6-7 GHz, 40 dB receiver RF front-end with 4.5 dB minimum noise figure in 0.13 μm CMOS for IR-UWB applications

  Xi Qin, Yumei Huang, Zhiliang Hong

  J. Semicond.  2013, 34(3): 035006
  doi: 10.1088/1674-4926/34/3/035006

  A CMOS low power, process/temperature variation tolerant RSSI with an integrated AGC loop

  Qianqian Lei, Min Lin, Yin Shi

  J. Semicond.  2013, 34(3): 035007
  doi: 10.1088/1674-4926/34/3/035007

  A lower power reconfigurable multi-band transceiver for short-range communication

  Lingwei Zhang, Baoyong Chi, Nan Qi, Liyuan Liu, Hanjun Jiang, Zhihua Wang

  J. Semicond.  2013, 34(3): 035008
  doi: 10.1088/1674-4926/34/3/035008

  A 27-mW 10-bit 125-MSPS charge domain pipelined ADC with a PVT insensitive boosted charge transfer circuit

  Zhenhai Chen, Songren Huang, Hong Zhang, Zongguang Yu, Huicai Ji

  J. Semicond.  2013, 34(3): 035009
  doi: 10.1088/1674-4926/34/3/035009

  The architecture design of a 2mW 18-bit high speed weight voltage type DAC based on dual weight resistance chain

  Qixing Chen, Qiyu Luo

  J. Semicond.  2013, 34(3): 035010
  doi: 10.1088/1674-4926/34/3/035010

• SEMICONDUCTOR TECHNOLOGY

  Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

  Xiaofeng Zhao, Dianzhong Wen, Cuicui Zhuang, Jingya Cao, Zhiqiang Wang

  J. Semicond.  2013, 34(3): 036001
  doi: 10.1088/1674-4926/34/3/036001

  Evaluation of planarization capability of copper slurry in the CMP process

  Kangda Yin, Shengli Wang, Yuling Liu, Chenwei Wang, Xiang Li

  J. Semicond.  2013, 34(3): 036002
  doi: 10.1088/1674-4926/34/3/036002

• 其他

  Be driven by innovation, be prosperous through hard work——analysis of the applied projects in 2012 semiconductor discipline of the National Natural Science Foundation of China

  Jie He, Qing Pan

  J. Semicond.  2013, 34(3): 037001
  doi: 10.1088/1674-4926/34/3/037001

Journal of Semiconductors © 2017 All Rights Reserved