J. Semicond. 2013, 34(3): 032001
doi: 10.1088/1674-4926/34/3/032001
J. Semicond. 2013, 34(3): 032002
doi: 10.1088/1674-4926/34/3/032002
J. Semicond. 2013, 34(3): 033001
doi: 10.1088/1674-4926/34/3/033001
Te vapor annealing of indium-doped CdMnTe crystals
J. Semicond. 2013, 34(3): 033002
doi: 10.1088/1674-4926/34/3/033002
Nanoindentation on the doubler plane of KDP single crystal
J. Semicond. 2013, 34(3): 034001
doi: 10.1088/1674-4926/34/3/034001
Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions
J. Semicond. 2013, 34(3): 034002
doi: 10.1088/1674-4926/34/3/034002
A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer
J. Semicond. 2013, 34(3): 034003
doi: 10.1088/1674-4926/34/3/034003
Simulation study on short channel double-gate junctionless field-effect transistors
J. Semicond. 2013, 34(3): 034004
doi: 10.1088/1674-4926/34/3/034004
A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors
J. Semicond. 2013, 34(3): 034005
doi: 10.1088/1674-4926/34/3/034005
Research on the diamond MISFET
J. Semicond. 2013, 34(3): 034006
doi: 10.1088/1674-4926/34/3/034006
The design and test of MEMS piezoresistive ultrasonic sensor arrays
J. Semicond. 2013, 34(3): 034007
doi: 10.1088/1674-4926/34/3/034007
Effects of seed layer on the performance of microcrystalline silicon germaniumsolar cells
J. Semicond. 2013, 34(3): 034008
doi: 10.1088/1674-4926/34/3/034008
A digitally calibrated CMOS RMS power detector for RF automatic gain control
J. Semicond. 2013, 34(3): 035001
doi: 10.1088/1674-4926/34/3/035001
J. Semicond. 2013, 34(3): 035002
doi: 10.1088/1674-4926/34/3/035002
J. Semicond. 2013, 34(3): 035003
doi: 10.1088/1674-4926/34/3/035003
A multi-path gated ring oscillator based time-to-digital converter in 65 nm CMOS technology
J. Semicond. 2013, 34(3): 035004
doi: 10.1088/1674-4926/34/3/035004
High linearity current communicating passive mixer employing a simple resistor bias
J. Semicond. 2013, 34(3): 035005
doi: 10.1088/1674-4926/34/3/035005
J. Semicond. 2013, 34(3): 035006
doi: 10.1088/1674-4926/34/3/035006
A CMOS low power, process/temperature variation tolerant RSSI with an integrated AGC loop
J. Semicond. 2013, 34(3): 035007
doi: 10.1088/1674-4926/34/3/035007
A lower power reconfigurable multi-band transceiver for short-range communication
J. Semicond. 2013, 34(3): 035008
doi: 10.1088/1674-4926/34/3/035008
J. Semicond. 2013, 34(3): 035009
doi: 10.1088/1674-4926/34/3/035009
J. Semicond. 2013, 34(3): 035010
doi: 10.1088/1674-4926/34/3/035010
J. Semicond. 2013, 34(3): 036001
doi: 10.1088/1674-4926/34/3/036001
Evaluation of planarization capability of copper slurry in the CMP process
J. Semicond. 2013, 34(3): 036002
doi: 10.1088/1674-4926/34/3/036002