J. Semicond. 2013, 34(6): 062001
doi: 10.1088/1674-4926/34/6/062001
J. Semicond. 2013, 34(6): 062002
doi: 10.1088/1674-4926/34/6/062002
J. Semicond. 2013, 34(6): 062003
doi: 10.1088/1674-4926/34/6/062003
J. Semicond. 2013, 34(6): 063001
doi: 10.1088/1674-4926/34/6/063001
Controlled growth of well-aligned ZnO nanowire arrays using the improved hydrothermal method
J. Semicond. 2013, 34(6): 063002
doi: 10.1088/1674-4926/34/6/063002
The effects of cure temperature history on the stability of polyimide films
J. Semicond. 2013, 34(6): 063003
doi: 10.1088/1674-4926/34/6/063003
Development of aluminum-doped ZnO films for a-Si:H/μc-Si:H solar cell applications
J. Semicond. 2013, 34(6): 063004
doi: 10.1088/1674-4926/34/6/063004
J. Semicond. 2013, 34(6): 063005
doi: 10.1088/1674-4926/34/6/063005
Design and optimization of Ge profiles for improved thermal stability of SiGe HBTs
J. Semicond. 2013, 34(6): 064001
doi: 10.1088/1674-4926/34/6/064001
Field plated 0.15 μm GaN HEMTs for millimeter-wave application
J. Semicond. 2013, 34(6): 064002
doi: 10.1088/1674-4926/34/6/064002
Planar InP-based Schottky barrier diodes for terahertz applications
J. Semicond. 2013, 34(6): 064003
doi: 10.1088/1674-4926/34/6/064003
Fabrication and characterization of an SOI MEMS gyroscope
J. Semicond. 2013, 34(6): 064004
doi: 10.1088/1674-4926/34/6/064004
J. Semicond. 2013, 34(6): 064005
doi: 10.1088/1674-4926/34/6/064005
An analytical model of the electric field distributions of buried superjunction devices
J. Semicond. 2013, 34(6): 064006
doi: 10.1088/1674-4926/34/6/064006
A Verilog-A large signal model for InP DHBT including thermal effects
J. Semicond. 2013, 34(6): 064007
doi: 10.1088/1674-4926/34/6/064007
A low temperature processed Si-quantum-dot poly-Si TFT nonvolatile memory device
J. Semicond. 2013, 34(6): 064008
doi: 10.1088/1674-4926/34/6/064008
Avalanche-enhanced photocurrents in pin silicon waveguides at 1550 nm wavelength
J. Semicond. 2013, 34(6): 064009
doi: 10.1088/1674-4926/34/6/064009
Accelerating the life of transistors
J. Semicond. 2013, 34(6): 064010
doi: 10.1088/1674-4926/34/6/064010
A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n
J. Semicond. 2013, 34(6): 065001
doi: 10.1088/1674-4926/34/6/065001
A wide range sigma-delta fractional-N frequency synthesizer with adaptive frequency calibration
J. Semicond. 2013, 34(6): 065002
doi: 10.1088/1674-4926/34/6/065002
J. Semicond. 2013, 34(6): 065003
doi: 10.1088/1674-4926/34/6/065003
A 0.9-V switched-opamp-based delta-sigma ADC with dual cycle shift DWA
J. Semicond. 2013, 34(6): 065004
doi: 10.1088/1674-4926/34/6/065004
A low power time-interleaved 10-bit 250-MSPS charge domain pipelined ADC for IF sampling
J. Semicond. 2013, 34(6): 065005
doi: 10.1088/1674-4926/34/6/065005
An I/Q DAC with gain matching circuit for a wireless transmitter
J. Semicond. 2013, 34(6): 065006
doi: 10.1088/1674-4926/34/6/065006
Delay-area trade-off for MPRM circuits based on hybrid discrete particle swarm optimization
J. Semicond. 2013, 34(6): 065007
doi: 10.1088/1674-4926/34/6/065007
A noise immunity improved level shift structure for a 600 V HVIC
J. Semicond. 2013, 34(6): 065008
doi: 10.1088/1674-4926/34/6/065008
J. Semicond. 2013, 34(6): 065009
doi: 10.1088/1674-4926/34/6/065009
A multiple transistor combination low-voltage curvature-corrected bandgap reference
J. Semicond. 2013, 34(6): 065010
doi: 10.1088/1674-4926/34/6/065010
Interconnects for nanoscale MOSFET technology:a review
J. Semicond. 2013, 34(6): 066001
doi: 10.1088/1674-4926/34/6/066001
Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices
J. Semicond. 2013, 34(6): 066002
doi: 10.1088/1674-4926/34/6/066002
Prevention of plasma-induced damage on thin gate oxides in BEOL sub-half micron CMOS processing
J. Semicond. 2013, 34(6): 066003
doi: 10.1088/1674-4926/34/6/066003
J. Semicond. 2013, 34(6): 066004
doi: 10.1088/1674-4926/34/6/066004
J. Semicond. 2013, 34(6): 066005
doi: 10.1088/1674-4926/34/6/066005