Archive

Volume 34, Issue 6, Jun 2013

• SEMICONDUCTOR PHYSICS

  The impact of germanium in strained Si/relaxed Si_1-xGe_x on carrier performance in non-degenerate and degenerate regimes

  EngSiew Kang, S Anwar, M T Ahmadi, Razali Ismail

  J. Semicond.  2013, 34(6): 062001
  doi: 10.1088/1674-4926/34/6/062001

  First principles study on the surface-and orientation-dependent electronic structure of a WO₃ nanowire

  Yuxiang Qin, Deyan Hua, Xiao Li

  J. Semicond.  2013, 34(6): 062002
  doi: 10.1088/1674-4926/34/6/062002

  The effect of InAs quantum-dot size and interdot distance on GaInP/GaAs/GaInAs/Ge multi-junction tandem solar cells

  Xiaosheng Qu, Sisi Zhang, Hongyin Bao, Liling Xiong

  J. Semicond.  2013, 34(6): 062003
  doi: 10.1088/1674-4926/34/6/062003

• SEMICONDUCTOR MATERIALS

  Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting

  Xiyuan Wang, Yongguang Huang, Dewei Liu, Xiaoning Zhu, Xiao Cui, Hongliang Zhu

  J. Semicond.  2013, 34(6): 063001
  doi: 10.1088/1674-4926/34/6/063001

  Controlled growth of well-aligned ZnO nanowire arrays using the improved hydrothermal method

  Zhitao Han, Sisi Li, Jinkui Chu, Yong Chen

  J. Semicond.  2013, 34(6): 063002
  doi: 10.1088/1674-4926/34/6/063002

  The effects of cure temperature history on the stability of polyimide films

  Wenguo Ning, Heng Li, Chunsheng Zhu, Le Luo, Dong Chen, Zhenzhen Duan

  J. Semicond.  2013, 34(6): 063003
  doi: 10.1088/1674-4926/34/6/063003

  Development of aluminum-doped ZnO films for a-Si:H/μc-Si:H solar cell applications

  Zhifang Lei, Guangyu Chen, Shibin Gu, Lingling Dai, Rong Yang, Yuan Meng, Ted Guo, Liwei Li

  J. Semicond.  2013, 34(6): 063004
  doi: 10.1088/1674-4926/34/6/063004

  Numerical study of heat transport and fluid flow during the silicon crystal growth process by the Czochralski method

  Chaohua Jin

  J. Semicond.  2013, 34(6): 063005
  doi: 10.1088/1674-4926/34/6/063005

• SEMICONDUCTOR DEVICES

  Design and optimization of Ge profiles for improved thermal stability of SiGe HBTs

  Qiang Fu, Wanrong Zhang, Dongyue Jin, Chunbao Ding, Yanxiao Zhao, Yujie Zhang

  J. Semicond.  2013, 34(6): 064001
  doi: 10.1088/1674-4926/34/6/064001

  Field plated 0.15 μm GaN HEMTs for millimeter-wave application

  Chunjiang Ren, Zhonghui Li, Xuming Yu, Quanhui Wang, Wen Wang, Tangsheng Chen, Bin Zhang

  J. Semicond.  2013, 34(6): 064002
  doi: 10.1088/1674-4926/34/6/064002

  Planar InP-based Schottky barrier diodes for terahertz applications

  Jingtao Zhou, Chengyue Yang, Ji Ge, Zhi Jin

  J. Semicond.  2013, 34(6): 064003
  doi: 10.1088/1674-4926/34/6/064003

  Fabrication and characterization of an SOI MEMS gyroscope

  Weiwei Zhong, Guowei Han, Chaowei Si, Jin Ning, Fuhua Yang

  J. Semicond.  2013, 34(6): 064004
  doi: 10.1088/1674-4926/34/6/064004

  Fabrication and field emission characteristics of a novel planar-gate electron source with patterned carbon nanotubes for backlight units

  Yongai Zhang, Tihang Lin, Xiangyao Zeng, Xiongtu Zhou, Tailiang Guo

  J. Semicond.  2013, 34(6): 064005
  doi: 10.1088/1674-4926/34/6/064005

  An analytical model of the electric field distributions of buried superjunction devices

  Haimeng Huang, Xingbi Chen

  J. Semicond.  2013, 34(6): 064006
  doi: 10.1088/1674-4926/34/6/064006

  A Verilog-A large signal model for InP DHBT including thermal effects

  Yuxia Shi, Zhi Jin, Zhijian Pan, Yongbo Su, Yuxiong Cao, Yan Wang

  J. Semicond.  2013, 34(6): 064007
  doi: 10.1088/1674-4926/34/6/064007

  A low temperature processed Si-quantum-dot poly-Si TFT nonvolatile memory device

  Wei Sun

  J. Semicond.  2013, 34(6): 064008
  doi: 10.1088/1674-4926/34/6/064008

  Avalanche-enhanced photocurrents in pin silicon waveguides at 1550 nm wavelength

  Yong Zhao, Chao Xu, Xiaoqing Jiang, Huiliang Ge

  J. Semicond.  2013, 34(6): 064009
  doi: 10.1088/1674-4926/34/6/064009

  Accelerating the life of transistors

  Haochun Qi, Changzhi Lü, Xiaoling Zhang, Xuesong Xie

  J. Semicond.  2013, 34(6): 064010
  doi: 10.1088/1674-4926/34/6/064010

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

  Jie Cui, Lei Chen, Chunlei Kang, Jia Shi, Xuguang Zhang, Baoli Ai, Yi Liu

  J. Semicond.  2013, 34(6): 065001
  doi: 10.1088/1674-4926/34/6/065001

  A wide range sigma-delta fractional-N frequency synthesizer with adaptive frequency calibration

  Jianjun Wei, Hanjun Jiang, Lingwei Zhang, Jingjing Dong, Fule Li, Zhihua Wang, Chun Zhang

  J. Semicond.  2013, 34(6): 065002
  doi: 10.1088/1674-4926/34/6/065002

  A wide load range, multi-mode synchronous buck DC-DC converter with a dynamic mode controller and adaptive slope compensation

  Chunhong Zhang, Haigang Yang, Richard Shi

  J. Semicond.  2013, 34(6): 065003
  doi: 10.1088/1674-4926/34/6/065003

  A 0.9-V switched-opamp-based delta-sigma ADC with dual cycle shift DWA

  Jinchen Zhao, Menglian Zhao, Xiaobo Wu, Hanqing Wang

  J. Semicond.  2013, 34(6): 065004
  doi: 10.1088/1674-4926/34/6/065004

  A low power time-interleaved 10-bit 250-MSPS charge domain pipelined ADC for IF sampling

  Zhenhai Chen, Hongwen Qian, Songren Huang, Hong Zhang, Zongguang Yu

  J. Semicond.  2013, 34(6): 065005
  doi: 10.1088/1674-4926/34/6/065005

  An I/Q DAC with gain matching circuit for a wireless transmitter

  Hualian Tang, Yiqi Zhuang, Xin Jing, Li Zhang

  J. Semicond.  2013, 34(6): 065006
  doi: 10.1088/1674-4926/34/6/065006

  Delay-area trade-off for MPRM circuits based on hybrid discrete particle swarm optimization

  Zhidi Jiang, Zhenhai Wang, Pengjun Wang

  J. Semicond.  2013, 34(6): 065007
  doi: 10.1088/1674-4926/34/6/065007

  A noise immunity improved level shift structure for a 600 V HVIC

  Yunwu Zhang, Jing Zhu, Guodong Sun, Cuichun Liu, Weifeng Sun, Qinsong Qian

  J. Semicond.  2013, 34(6): 065008
  doi: 10.1088/1674-4926/34/6/065008

  A continuously and widely tunable analog baseband chain with digital-assisted calibration for multi-standard DBS applications

  Songting Li, Jiancheng Li, Xiaochen Gu, Hongyi Wang

  J. Semicond.  2013, 34(6): 065009
  doi: 10.1088/1674-4926/34/6/065009

  A multiple transistor combination low-voltage curvature-corrected bandgap reference

  Kai Su, Min Gong, Huaibin Qin, Chen Sun

  J. Semicond.  2013, 34(6): 065010
  doi: 10.1088/1674-4926/34/6/065010

• SEMICONDUCTOR TECHNOLOGY

  Interconnects for nanoscale MOSFET technology:a review

  Amit Chaudhry

  J. Semicond.  2013, 34(6): 066001
  doi: 10.1088/1674-4926/34/6/066001

  Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices

  Zuozhen Fu, Huaxiang Yin, Xiaolong Ma, Shumin Chai, Jianfeng Gao, Dapeng Chen

  J. Semicond.  2013, 34(6): 066002
  doi: 10.1088/1674-4926/34/6/066002

  Prevention of plasma-induced damage on thin gate oxides in BEOL sub-half micron CMOS processing

  Qi He, Wenbin Zhao, Li Peng, Zongguang Yu

  J. Semicond.  2013, 34(6): 066003
  doi: 10.1088/1674-4926/34/6/066003

  Two-dimensional simulation of inductively coupled plasma based on COMSOL and comparison with experimental data

  Jia Cheng, Linhong Ji, Kesheng Wang, Chuankun Han, Yixiang Shi

  J. Semicond.  2013, 34(6): 066004
  doi: 10.1088/1674-4926/34/6/066004

  Effective interface passivation of a Ge/HfO₂ gate stack using ozone pre-gate treatment and ozone ambient annealing

  Mei Zhao, Renrong Liang, Jing Wang, Jun Xu

  J. Semicond.  2013, 34(6): 066005
  doi: 10.1088/1674-4926/34/6/066005

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