J. Semicond. 2013, 34(8): 082001
doi: 10.1088/1674-4926/34/8/082001
Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature
J. Semicond. 2013, 34(8): 082002
doi: 10.1088/1674-4926/34/8/082002
Averaged hole mobility model of biaxially strained Si
J. Semicond. 2013, 34(8): 082003
doi: 10.1088/1674-4926/34/8/082003
J. Semicond. 2013, 34(8): 083001
doi: 10.1088/1674-4926/34/8/083001
Preparation of n-type semiconductor SnO2 thin films
J. Semicond. 2013, 34(8): 083002
doi: 10.1088/1674-4926/34/8/083002
The structural and magnetic properties of Fe/(Ga, Mn)As heterostructures
J. Semicond. 2013, 34(8): 083003
doi: 10.1088/1674-4926/34/8/083003
J. Semicond. 2013, 34(8): 083004
doi: 10.1088/1674-4926/34/8/083004
The impact of polishing on germanium-on-insulator substrates
J. Semicond. 2013, 34(8): 083005
doi: 10.1088/1674-4926/34/8/083005
J. Semicond. 2013, 34(8): 084001
doi: 10.1088/1674-4926/34/8/084001
J. Semicond. 2013, 34(8): 084002
doi: 10.1088/1674-4926/34/8/084002
J. Semicond. 2013, 34(8): 084003
doi: 10.1088/1674-4926/34/8/084003
Stability analysis of a back-gate graphene transistor in air environment
J. Semicond. 2013, 34(8): 084004
doi: 10.1088/1674-4926/34/8/084004
A vertically integrated capacitorless memory cell
J. Semicond. 2013, 34(8): 084005
doi: 10.1088/1674-4926/34/8/084005
A novel compact model for on-chip stacked transformers in RF-CMOS technology
J. Semicond. 2013, 34(8): 084006
doi: 10.1088/1674-4926/34/8/084006
The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device
J. Semicond. 2013, 34(8): 084007
doi: 10.1088/1674-4926/34/8/084007
Scaling trends in energy recovery logic:an analytical approach
J. Semicond. 2013, 34(8): 085001
doi: 10.1088/1674-4926/34/8/085001
A dual-band quadrature VCO with gain proportional to oscillation frequency
J. Semicond. 2013, 34(8): 085002
doi: 10.1088/1674-4926/34/8/085002
A 1.2-V, 84-dB
J. Semicond. 2013, 34(8): 085003
doi: 10.1088/1674-4926/34/8/085003
J. Semicond. 2013, 34(8): 085004
doi: 10.1088/1674-4926/34/8/085004
An ultra-broadband distributed passive gate-pumped mixer in 0.18 μm CMOS
J. Semicond. 2013, 34(8): 085005
doi: 10.1088/1674-4926/34/8/085005
J. Semicond. 2013, 34(8): 085006
doi: 10.1088/1674-4926/34/8/085006
A low power 2.4 GHz transceiver for ZigBee applications
J. Semicond. 2013, 34(8): 085007
doi: 10.1088/1674-4926/34/8/085007
A high SFDR 6-bit 20-MS/s SAR ADC based on time-domain comparator
J. Semicond. 2013, 34(8): 085008
doi: 10.1088/1674-4926/34/8/085008
J. Semicond. 2013, 34(8): 085009
doi: 10.1088/1674-4926/34/8/085009
A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS
J. Semicond. 2013, 34(8): 085010
doi: 10.1088/1674-4926/34/8/085010
J. Semicond. 2013, 34(8): 085011
doi: 10.1088/1674-4926/34/8/085011
A current-mode DC-DC buck converter with adaptive zero compensation
J. Semicond. 2013, 34(8): 085012
doi: 10.1088/1674-4926/34/8/085012
A 14-bit 250-MS/s current-steering CMOS digital-to-analog converter
J. Semicond. 2013, 34(8): 085013
doi: 10.1088/1674-4926/34/8/085013
A 1-V 10-bit 80-MS/s 1.6-mW SAR ADC in 65-nm GP CMOS
J. Semicond. 2013, 34(8): 085014
doi: 10.1088/1674-4926/34/8/085014
A 14-bit 100-MS/s CMOS pipelined ADC with 11.3 ENOB
J. Semicond. 2013, 34(8): 085015
doi: 10.1088/1674-4926/34/8/085015
A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors
J. Semicond. 2013, 34(8): 085016
doi: 10.1088/1674-4926/34/8/085016
A VHF RFPGA with adaptive phase-correction technique
J. Semicond. 2013, 34(8): 085017
doi: 10.1088/1674-4926/34/8/085017
Reactive ion etching of Ti-diffused LiNbO3 slab waveguides
J. Semicond. 2013, 34(8): 086001
doi: 10.1088/1674-4926/34/8/086001
Modulation of the effective work function of TiN metal gate for PMOS application
J. Semicond. 2013, 34(8): 086002
doi: 10.1088/1674-4926/34/8/086002
Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics
J. Semicond. 2013, 34(8): 086003
doi: 10.1088/1674-4926/34/8/086003
A novel oxidation-based wet etching method for AlGaN/GaN heterostructures
J. Semicond. 2013, 34(8): 086004
doi: 10.1088/1674-4926/34/8/086004
A new fabrication process for the SOI-based miniature electric field sensor
J. Semicond. 2013, 34(8): 086005
doi: 10.1088/1674-4926/34/8/086005