Archive

Volume 34, Issue 8, Aug 2013

• SEMICONDUCTOR PHYSICS

  Spray pyrolysis of tin selenide thin-film semiconductors:the effect of selenium concentration on the properties of the thin films

  M. R. Fadavieslam, M. M. Bagheri-Mohagheghi

  J. Semicond.  2013, 34(8): 082001
  doi: 10.1088/1674-4926/34/8/082001

  Nano inhomogeneity effects on small Ag/n-Si Schottky diode parameters at high temperature

  M. A. Yeganeh, R. K. Mamedov, A. J. Novinrooz

  J. Semicond.  2013, 34(8): 082002
  doi: 10.1088/1674-4926/34/8/082002

  Averaged hole mobility model of biaxially strained Si

  Jianjun Song, He Zhu, Jinyong Yang, Heming Zhang, Rongxi Xuan, Huiyong Hu

  J. Semicond.  2013, 34(8): 082003
  doi: 10.1088/1674-4926/34/8/082003

• SEMICONDUCTOR MATERIALS

  The effect of annealing temperature and the characteristics of p-n junction diodes based on sprayed polyaniline/ZnO thin films

  R. Suresh, V. Ponnuswamy, J. Chandrasekaran, D. Manoharan, R. Mariappan

  J. Semicond.  2013, 34(8): 083001
  doi: 10.1088/1674-4926/34/8/083001

  Preparation of n-type semiconductor SnO₂ thin films

  Achour Rahal, Said Benramache, Boubaker Benhaoua

  J. Semicond.  2013, 34(8): 083002
  doi: 10.1088/1674-4926/34/8/083002

  The structural and magnetic properties of Fe/(Ga, Mn)As heterostructures

  Jiajun Deng, Pei Chen, Wenjie Wang, Bing Hu, Jiantao Che, Lin Chen, Hailong Wang, Jianhua Zhao

  J. Semicond.  2013, 34(8): 083003
  doi: 10.1088/1674-4926/34/8/083003

  Electronic structure and optical properties of a new type of semiconductor material:graphene monoxide

  Gui Yang, Yufeng Zhang, Xunwang Yan

  J. Semicond.  2013, 34(8): 083004
  doi: 10.1088/1674-4926/34/8/083004

  The impact of polishing on germanium-on-insulator substrates

  Wang Lin, Yujiao Ruan, Songyan Chen, Cheng Li, Hongkai Lai, Wei Huang

  J. Semicond.  2013, 34(8): 083005
  doi: 10.1088/1674-4926/34/8/083005

• SEMICONDUCTOR DEVICES

  ANFIS-based approach to studying subthreshold behavior including the traps effect for nanoscale thin-film DG MOSFETs

  T. Bentrcia, F. Djeffal, E. Chebaaki

  J. Semicond.  2013, 34(8): 084001
  doi: 10.1088/1674-4926/34/8/084001

  Enhanced performance of C₆₀ N-type organic field-effect transistors using a pentacene passivation layer

  Xiaoyu Liang, Xiaoman Cheng, Boqun Du, Xiao Bai, Jianfeng Fan

  J. Semicond.  2013, 34(8): 084002
  doi: 10.1088/1674-4926/34/8/084002

  The influence of RF power on the electrical properties of sputtered amorphous In-Ga-Zn-O thin films and devices

  Junfei Shi, Chengyuan Dong, Wenjun Dai, Jie Wu, Yuting Chen, Runze Zhan

  J. Semicond.  2013, 34(8): 084003
  doi: 10.1088/1674-4926/34/8/084003

  Stability analysis of a back-gate graphene transistor in air environment

  Kunpeng Jia, Jie Yang, Yajuan Su, Pengfei Nie, Jian Zhong, Qingqing Liang, Huilong Zhu

  J. Semicond.  2013, 34(8): 084004
  doi: 10.1088/1674-4926/34/8/084004

  A vertically integrated capacitorless memory cell

  Xiaodong Tong, Hao Wu, Lichuan Zhao, Ming Wang, Huicai Zhong

  J. Semicond.  2013, 34(8): 084005
  doi: 10.1088/1674-4926/34/8/084005

  A novel compact model for on-chip stacked transformers in RF-CMOS technology

  Jun Liu, Jincai Wen, Qian Zhao, Lingling Sun

  J. Semicond.  2013, 34(8): 084006
  doi: 10.1088/1674-4926/34/8/084006

  The abnormal electrostatic discharge of a no-connect metal cover in a ceramic packaging device

  Song Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han

  J. Semicond.  2013, 34(8): 084007
  doi: 10.1088/1674-4926/34/8/084007

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Scaling trends in energy recovery logic:an analytical approach

  Jitendra Kanungo, S. Dasgupta

  J. Semicond.  2013, 34(8): 085001
  doi: 10.1088/1674-4926/34/8/085001

  A dual-band quadrature VCO with gain proportional to oscillation frequency

  Wenrui Zhu, Haigang Yang, Tongqiang Gao, Hui Zhang

  J. Semicond.  2013, 34(8): 085002
  doi: 10.1088/1674-4926/34/8/085002

  A 1.2-V, 84-dB \begin{document}$\Sigma\Delta$\end{document} ADM in 0.18-μm digital CMOS technology

  Shujuan Yin, Xiangyu Li

  J. Semicond.  2013, 34(8): 085003
  doi: 10.1088/1674-4926/34/8/085003

  An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for passive RFID tags

  Xiaoyun Jia, Peng Feng, Shengguang Zhang, Nanjian Wu, Baiqin Zhao, Su Liu

  J. Semicond.  2013, 34(8): 085004
  doi: 10.1088/1674-4926/34/8/085004

  An ultra-broadband distributed passive gate-pumped mixer in 0.18 μm CMOS

  Zhenxing Yu, Jun Feng

  J. Semicond.  2013, 34(8): 085005
  doi: 10.1088/1674-4926/34/8/085005

  High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits

  Xiaogang Tong, Jun Liu, Chenyang Xue

  J. Semicond.  2013, 34(8): 085006
  doi: 10.1088/1674-4926/34/8/085006

  A low power 2.4 GHz transceiver for ZigBee applications

  Weiyang Liu, Jingjing Chen, Haiyong Wang, Nanjian Wu

  J. Semicond.  2013, 34(8): 085007
  doi: 10.1088/1674-4926/34/8/085007

  A high SFDR 6-bit 20-MS/s SAR ADC based on time-domain comparator

  Xue Han, Hua Fan, Qi Wei, Huazhong Yang

  J. Semicond.  2013, 34(8): 085008
  doi: 10.1088/1674-4926/34/8/085008

  An RF frontend circuit design of a Compass and GPS dual-mode dual-channel image rejection radio receiver

  Gong Zhang, Honglin Chen, Wei Liu, Hanbing Yang, Lijuan Zhang, Xiangwei Wang, Lei Shi, Sijing Hu, Mingzhao Wang, Zhuojian Fu

  J. Semicond.  2013, 34(8): 085009
  doi: 10.1088/1674-4926/34/8/085009

  A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS

  Jia Cao, Zhiqun Li, Qin Li, Liang Chen, Meng Zhang, Chenjian Wu, Chong Wang, Zhigong Wang

  J. Semicond.  2013, 34(8): 085010
  doi: 10.1088/1674-4926/34/8/085010

  A baseband circuit for wake-up receivers with double-mode detection and enhanced sensitivity robustness

  Wenrui Zhu, Haigang Yang, Tongqiang Gao, Fei Liu, Xiaoyan Cheng, Dandan Zhang

  J. Semicond.  2013, 34(8): 085011
  doi: 10.1088/1674-4926/34/8/085011

  A current-mode DC-DC buck converter with adaptive zero compensation

  Ling Yang, Guoding Dai, Chongwei Xu, Yuezhi Liu

  J. Semicond.  2013, 34(8): 085012
  doi: 10.1088/1674-4926/34/8/085012

  A 14-bit 250-MS/s current-steering CMOS digital-to-analog converter

  Xueqing Li, Hua Fan, Qi Wei, Zhen Xu, Jianan Liu, Huazhong Yang

  J. Semicond.  2013, 34(8): 085013
  doi: 10.1088/1674-4926/34/8/085013

  A 1-V 10-bit 80-MS/s 1.6-mW SAR ADC in 65-nm GP CMOS

  Jun Ma, Yawei Guo, Yue Wu, Xu Cheng, Xiaoyang Zeng

  J. Semicond.  2013, 34(8): 085014
  doi: 10.1088/1674-4926/34/8/085014

  A 14-bit 100-MS/s CMOS pipelined ADC with 11.3 ENOB

  Ke Wang, Chaojie Fan, Jianjun Zhou, Wenjie Pan

  J. Semicond.  2013, 34(8): 085015
  doi: 10.1088/1674-4926/34/8/085015

  A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors

  Ye Han, Quanliang Li, Cong Shi, Nanjian Wu

  J. Semicond.  2013, 34(8): 085016
  doi: 10.1088/1674-4926/34/8/085016

  A VHF RFPGA with adaptive phase-correction technique

  Xu Cheng, Guiliang Guo, Yuepeng Yan, Rongjiang Liu, Yu Jiang

  J. Semicond.  2013, 34(8): 085017
  doi: 10.1088/1674-4926/34/8/085017

• SEMICONDUCTOR TECHNOLOGY

  Reactive ion etching of Ti-diffused LiNbO₃ slab waveguides

  Jianjie Wu, Jinyang Li, Yanqing Yao, Zhimei Qi

  J. Semicond.  2013, 34(8): 086001
  doi: 10.1088/1674-4926/34/8/086001

  Modulation of the effective work function of TiN metal gate for PMOS application

  Kai Han, Xueli Ma, Hong Yang, Wenwu Wang

  J. Semicond.  2013, 34(8): 086002
  doi: 10.1088/1674-4926/34/8/086002

  Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics

  Shengli Wang, Kangda Yin, Xiang Li, Hongwei Yue, Yunling Liu

  J. Semicond.  2013, 34(8): 086003
  doi: 10.1088/1674-4926/34/8/086003

  A novel oxidation-based wet etching method for AlGaN/GaN heterostructures

  Jinbao Cai, Jinyan Wang, Yang Liu, Zhe Xu, Maojun Wang, Min Yu, Bing Xie, Wengang Wu

  J. Semicond.  2013, 34(8): 086004
  doi: 10.1088/1674-4926/34/8/086004

  A new fabrication process for the SOI-based miniature electric field sensor

  Wei Liu, Pengfei Yang, Chunrong Peng, Dongming Fang, Shanhong Xia

  J. Semicond.  2013, 34(8): 086005
  doi: 10.1088/1674-4926/34/8/086005

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