Archive

Volume 35, Issue 3, Mar 2014

• SEMICONDUCTOR PHYSICS

  Electronic structure of (InSb)_m/(HgTe)_n short period superlattices

  Jian Li

  J. Semicond.  2014, 35(3): 032001
  doi: 10.1088/1674-4926/35/3/032001

  Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs

  Xiaoyu Ma, Wanling Deng, Junkai Huang

  J. Semicond.  2014, 35(3): 032002
  doi: 10.1088/1674-4926/35/3/032002

• SEMICONDUCTOR MATERIALS

  Physical vapor transport crystal growth of ZnO

  Yang Liu, Jianping Ma, Fuli Liu, Yuan Zang, Yantao Liu

  J. Semicond.  2014, 35(3): 033001
  doi: 10.1088/1674-4926/35/3/033001

  Effect of temperature on phase transition behavior of antiferroelectric (Pb_0.97La_0.02)(Zr_0.75Sn_0.25-xTi_x)O₃ ceramics

  Tingting Chen, Bing Liu, Xiujian Chou, Jun Liu, Chenyang Xue, Wendong Zhang

  J. Semicond.  2014, 35(3): 033002
  doi: 10.1088/1674-4926/35/3/033002

• SEMICONDUCTOR DEVICES

  Modeling and simulation of nanoscale tri-gate MOSFETs including quantum effects

  P. Vimala, N. B. Balamurugan

  J. Semicond.  2014, 35(3): 034001
  doi: 10.1088/1674-4926/35/3/034001

  Analytical modeling and simulation of germanium single gate silicon on insulator TFET

  T. S. Arun Samuel, N. B. Balamurugan

  J. Semicond.  2014, 35(3): 034002
  doi: 10.1088/1674-4926/35/3/034002

  A laterally graded junctionless transistor

  Punyasloka Bal, Bahniman Ghosh, Partha Mondal, M. W. Akram

  J. Semicond.  2014, 35(3): 034003
  doi: 10.1088/1674-4926/35/3/034003

  Backgating effect in GaAs FETs with a channel-semi-insulating substrate boundary

  Ahmed Chaouki Megherbi, Said Benramache, Abderrazak Guettaf

  J. Semicond.  2014, 35(3): 034004
  doi: 10.1088/1674-4926/35/3/034004

  Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

  Aritra Acharyya, Suranjana Banerjee, J. P. Banerjee

  J. Semicond.  2014, 35(3): 034005
  doi: 10.1088/1674-4926/35/3/034005

  Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature

  J. Pradhan, S. R. Pattanaik, S. K. Swain, G. N. Dash

  J. Semicond.  2014, 35(3): 034006
  doi: 10.1088/1674-4926/35/3/034006

  Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation

  Futong Chu, Chao Chen, Xingzhao Liu

  J. Semicond.  2014, 35(3): 034007
  doi: 10.1088/1674-4926/35/3/034007

  The STI stress effect on deep submicron PDSOI MOSFETs

  Jianhui Bu, Shuzhen Li, Jiajun Luo, Zhengsheng Han

  J. Semicond.  2014, 35(3): 034008
  doi: 10.1088/1674-4926/35/3/034008

  Analytical modeling of the direct tunneling current through high-k gate stacks for long-channel cylindrical surrounding-gate MOSFETs

  Lina Shi, Yiqi Zhuang, Cong Li, Dechang Li

  J. Semicond.  2014, 35(3): 034009
  doi: 10.1088/1674-4926/35/3/034009

  A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs

  Jun Liu, Zhiping Yu, Lingling Sun

  J. Semicond.  2014, 35(3): 034010
  doi: 10.1088/1674-4926/35/3/034010

  An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement

  Ye Fan, Xiaorong Luo, Kun Zhou, Yuanhang Fan, Yongheng Jiang, Qi Wang, Pei Wang, Yinchun Luo, Bo Zhang

  J. Semicond.  2014, 35(3): 034011
  doi: 10.1088/1674-4926/35/3/034011

  High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells

  Yang Tang, Zuochang Ye, Yan Wang

  J. Semicond.  2014, 35(3): 034012
  doi: 10.1088/1674-4926/35/3/034012

  Numerical simulation of the performance of the a-Si:H/a-SiGe:H/a-SiGe:H tandem solar cell

  Shaoying Ke, Chong Wang, Tao Pan, Jie Yang, Yu Yang

  J. Semicond.  2014, 35(3): 034013
  doi: 10.1088/1674-4926/35/3/034013

  A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process

  Ning Shen, Zhen'an Tang, Jun Yu, Zhengxing Huang

  J. Semicond.  2014, 35(3): 034014
  doi: 10.1088/1674-4926/35/3/034014

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

  J. Manjula, S. Malarvizhi

  J. Semicond.  2014, 35(3): 035001
  doi: 10.1088/1674-4926/35/3/035001

  A Ka-band wide locking range frequency divider with high injection sensitivity

  Faen Liu, Zhigong Wang, Zhiqun Li, Qin Li, Lu Tang, Geliang Yang, Zhu Li

  J. Semicond.  2014, 35(3): 035002
  doi: 10.1088/1674-4926/35/3/035002

  A single die 1.2 V 55 to 95 dB DR delta sigma ADC with configurable modulator and OSR

  Haijun Wu, Bin Li, Huabin Zhang, Zhengping Li, Longyue Zeng

  J. Semicond.  2014, 35(3): 035003
  doi: 10.1088/1674-4926/35/3/035003

  A 3.8 GHz programmable gain amplifier with a 0.1 dB gain step

  Nan Lin, Fei Fang, Zhiliang Hong, Hao Fang

  J. Semicond.  2014, 35(3): 035004
  doi: 10.1088/1674-4926/35/3/035004

  A 10-bit ratio-independent cyclic ADC with offset canceling for a CMOS image sensor

  Kaiming Nie, Suying Yao, Jiangtao Xu, Zhaorui Jiang

  J. Semicond.  2014, 35(3): 035005
  doi: 10.1088/1674-4926/35/3/035005

  A hearing aid on-chip system based on accuracy optimized front-and back-end blocks

  Fanyang Li, Hao Jiang

  J. Semicond.  2014, 35(3): 035006
  doi: 10.1088/1674-4926/35/3/035006

  Conversion algorithm for MPRM expansion

  Pengjun Wang, Zhenhai Wang, Rui Xu, Zhidi Jiang, Disheng Wang

  J. Semicond.  2014, 35(3): 035007
  doi: 10.1088/1674-4926/35/3/035007

  A 14-bit 500-MS/s DAC with digital background calibration

  Zhen Xu, Xueqing Li, Jia'nan Liu, Qi Wei, Li Luo, Huazhong Yang

  J. Semicond.  2014, 35(3): 035008
  doi: 10.1088/1674-4926/35/3/035008

• SEMICONDUCTOR TECHNOLOGY

  Optimization of ohmic contact for InP-based transferred electronic devices

  Deqi Wu, Wuchang Ding, Shanshan Yang, Rui Jia, Zhi Jin, Xinyu Liu

  J. Semicond.  2014, 35(3): 036001
  doi: 10.1088/1674-4926/35/3/036001

  Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP

  Hailong Li, Jin Kang, Yuling Liu, Chenwei Wang, Hong Liu, Jiaojiao Gao

  J. Semicond.  2014, 35(3): 036002
  doi: 10.1088/1674-4926/35/3/036002

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