Electronic structure of (InSb)m/(HgTe)n short period superlattices
J. Semicond. 2014, 35(3): 032001
doi: 10.1088/1674-4926/35/3/032001
J. Semicond. 2014, 35(3): 032002
doi: 10.1088/1674-4926/35/3/032002
Physical vapor transport crystal growth of ZnO
J. Semicond. 2014, 35(3): 033001
doi: 10.1088/1674-4926/35/3/033001
J. Semicond. 2014, 35(3): 033002
doi: 10.1088/1674-4926/35/3/033002
Modeling and simulation of nanoscale tri-gate MOSFETs including quantum effects
J. Semicond. 2014, 35(3): 034001
doi: 10.1088/1674-4926/35/3/034001
Analytical modeling and simulation of germanium single gate silicon on insulator TFET
J. Semicond. 2014, 35(3): 034002
doi: 10.1088/1674-4926/35/3/034002
A laterally graded junctionless transistor
J. Semicond. 2014, 35(3): 034003
doi: 10.1088/1674-4926/35/3/034003
Backgating effect in GaAs FETs with a channel-semi-insulating substrate boundary
J. Semicond. 2014, 35(3): 034004
doi: 10.1088/1674-4926/35/3/034004
J. Semicond. 2014, 35(3): 034005
doi: 10.1088/1674-4926/35/3/034005
J. Semicond. 2014, 35(3): 034006
doi: 10.1088/1674-4926/35/3/034006
J. Semicond. 2014, 35(3): 034007
doi: 10.1088/1674-4926/35/3/034007
The STI stress effect on deep submicron PDSOI MOSFETs
J. Semicond. 2014, 35(3): 034008
doi: 10.1088/1674-4926/35/3/034008
J. Semicond. 2014, 35(3): 034009
doi: 10.1088/1674-4926/35/3/034009
A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs
J. Semicond. 2014, 35(3): 034010
doi: 10.1088/1674-4926/35/3/034010
An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement
J. Semicond. 2014, 35(3): 034011
doi: 10.1088/1674-4926/35/3/034011
J. Semicond. 2014, 35(3): 034012
doi: 10.1088/1674-4926/35/3/034012
Numerical simulation of the performance of the a-Si:H/a-SiGe:H/a-SiGe:H tandem solar cell
J. Semicond. 2014, 35(3): 034013
doi: 10.1088/1674-4926/35/3/034013
A low-cost infrared absorbing structure for an uncooled infrared detector in a standard CMOS process
J. Semicond. 2014, 35(3): 034014
doi: 10.1088/1674-4926/35/3/034014
Performance analysis of a low power low noise tunable band pass filter for multiband RF front end
J. Semicond. 2014, 35(3): 035001
doi: 10.1088/1674-4926/35/3/035001
A Ka-band wide locking range frequency divider with high injection sensitivity
J. Semicond. 2014, 35(3): 035002
doi: 10.1088/1674-4926/35/3/035002
A single die 1.2 V 55 to 95 dB DR delta sigma ADC with configurable modulator and OSR
J. Semicond. 2014, 35(3): 035003
doi: 10.1088/1674-4926/35/3/035003
A 3.8 GHz programmable gain amplifier with a 0.1 dB gain step
J. Semicond. 2014, 35(3): 035004
doi: 10.1088/1674-4926/35/3/035004
A 10-bit ratio-independent cyclic ADC with offset canceling for a CMOS image sensor
J. Semicond. 2014, 35(3): 035005
doi: 10.1088/1674-4926/35/3/035005
A hearing aid on-chip system based on accuracy optimized front-and back-end blocks
J. Semicond. 2014, 35(3): 035006
doi: 10.1088/1674-4926/35/3/035006
Conversion algorithm for MPRM expansion
J. Semicond. 2014, 35(3): 035007
doi: 10.1088/1674-4926/35/3/035007
A 14-bit 500-MS/s DAC with digital background calibration
J. Semicond. 2014, 35(3): 035008
doi: 10.1088/1674-4926/35/3/035008
Optimization of ohmic contact for InP-based transferred electronic devices
J. Semicond. 2014, 35(3): 036001
doi: 10.1088/1674-4926/35/3/036001
J. Semicond. 2014, 35(3): 036002
doi: 10.1088/1674-4926/35/3/036002