Archive

Volume 36, Issue 12, Dec 2015

• INVITED REVIEW PAPERS

  Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

  Hongda Chen, Zan Zhang, Beiju Huang, Luhong Mao, Zanyun Zhang

  J. Semicond.  2015, 36(12): 121001
  doi: 10.1088/1674-4926/36/12/121001

• SEMICONDUCTOR PHYSICS

  Variable range hopping conduction in n-CdSe samples at very low temperature

  M Errai, A El Kaaouachi, H El Idrissi

  J. Semicond.  2015, 36(12): 122001
  doi: 10.1088/1674-4926/36/12/122001

  Theoretical study of defect impact on two-dimensional MoS₂

  Anna V. Krivosheeva, Victor L. Shaposhnikov, Victor E. Borisenko, Jean-Louis Lazzari, Chow Waileong, Julia Gusakova, Beng Kang Tay

  J. Semicond.  2015, 36(12): 122002
  doi: 10.1088/1674-4926/36/12/122002

  Correlated barrier hopping of CuO nanoparticles

  Jiji Koshy, M. Soosen Samuel, Anoop Chandran, K. C. George

  J. Semicond.  2015, 36(12): 122003
  doi: 10.1088/1674-4926/36/12/122003

• SEMICONDUCTOR MATERIALS

  Enhancement of phosphors-solubility in ZnO by thermal annealing

  K. Mahmood, N. Amin, A. Ali, M. Ajaz un Nabi, M. Imran Arshad, M. Zafar, M. Asghar

  J. Semicond.  2015, 36(12): 123001
  doi: 10.1088/1674-4926/36/12/123001

  Properties of n-type SnO₂ semiconductor prepared by spray ultrasonic technique for photovoltaic applications

  H. Bendjedidi, A. Attaf, H. Saidi, M. S. Aida, S. Semmari, A. Bouhdjar, Y. Benkhetta

  J. Semicond.  2015, 36(12): 123002
  doi: 10.1088/1674-4926/36/12/123002

  Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

  Cholho Jang, Zhizhen Ye, Jianguo Lü

  J. Semicond.  2015, 36(12): 123003
  doi: 10.1088/1674-4926/36/12/123003

  High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process

  Yingchun Fu, Xiaofeng Wang, Liuhong Ma, Yaling Zhou, Xiang Yang, Xiaodong Wang, Fuhua Yang

  J. Semicond.  2015, 36(12): 123004
  doi: 10.1088/1674-4926/36/12/123004

  Transparent and conductive PEDOT:PSS/Ag NW/PEDOT:PSS hybrid films prepared by spin-coating at room temperature

  Qingqing Yue, Jinliang Yan, Delan Meng

  J. Semicond.  2015, 36(12): 123005
  doi: 10.1088/1674-4926/36/12/123005

  Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC

  Chao Han, Yuming Zhang, Qingwen Song, Xiaoyan Tang, Hui Guo, Yimen Zhang, Fei Yang, Yingxi Niu

  J. Semicond.  2015, 36(12): 123006
  doi: 10.1088/1674-4926/36/12/123006

  Metal-catalyzed growth of In₂O₃ nanotowers using thermal evaporation and oxidation method

  Jian Liu, Shihua Huang, Lü He

  J. Semicond.  2015, 36(12): 123007
  doi: 10.1088/1674-4926/36/12/123007

  Preparation, electronic structure, and photoluminescent properties of Eu²⁺ activated BaSi₂O₅ powder phosphors for solid-state lighting

  Donghua Cao, Hui Wang, Hongjun Wei, Weiqiang Yang

  J. Semicond.  2015, 36(12): 123008
  doi: 10.1088/1674-4926/36/12/123008

• SEMICONDUCTOR DEVICES

  Nanoscale potential barrier distributions and their effect on current transport in Ni/n type Si Schottky diode

  M. Yeganeh, N. Balkanian, Sh. Rahmatallahpur

  J. Semicond.  2015, 36(12): 124001
  doi: 10.1088/1674-4926/36/12/124001

  Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

  Kamal Zeghdar, Lakhdar Dehimi, Achour Saadoune, Nouredine Sengouga

  J. Semicond.  2015, 36(12): 124002
  doi: 10.1088/1674-4926/36/12/124002

  Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO₂ films in p-GaAs metal-oxide-semiconductor capacitors

  Chen Liu, Yuming Zhang, Yimen Zhang, Hongliang Lü, Bin Lu

  J. Semicond.  2015, 36(12): 124003
  doi: 10.1088/1674-4926/36/12/124003

  An insulated gate bipolar transistor with surface n-type barrier

  Mengxuan Jiang, Z. John Shen, Jun Wang, Zhikang Shuai, Xin Yin, Bingbing Sun, Linyuan Liao

  J. Semicond.  2015, 36(12): 124004
  doi: 10.1088/1674-4926/36/12/124004

  Modeling of current-voltage characteristics for dual-gate amorphous silicon thin-film transistors considering deep Gaussian density-of-state distribution

  Jian Qin, Ruohe Yao

  J. Semicond.  2015, 36(12): 124005
  doi: 10.1088/1674-4926/36/12/124005

  Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique

  Yang Huang, Yue Xu, Yufeng Guo

  J. Semicond.  2015, 36(12): 124006
  doi: 10.1088/1674-4926/36/12/124006

  Design of novel DDSCR with embedded PNP structure for ESD protection

  Xiuwen Bi, Hailian Liang, Xiaofeng Gu, Long Huang

  J. Semicond.  2015, 36(12): 124007
  doi: 10.1088/1674-4926/36/12/124007

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Proton radiation effect of NPN-input operational amplifier under different bias conditions

  Ke Jiang, Wu Lu, Qi Guo, Chengfa He, Xin Wang, Muohan Liu, Xiaolong Li

  J. Semicond.  2015, 36(12): 125001
  doi: 10.1088/1674-4926/36/12/125001

  Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application

  Junming Lin, Guohao Zhang, Yaohua Zheng, Sizhen Li, Zhihao Zhang, Sidi Chen

  J. Semicond.  2015, 36(12): 125002
  doi: 10.1088/1674-4926/36/12/125002

  A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

  Qin Ge, Hongqi Tao, Xuming Yu

  J. Semicond.  2015, 36(12): 125003
  doi: 10.1088/1674-4926/36/12/125003

  A trimming technique for capacitive SAR ADC as sensor interface

  Ke Liu, Zhankun Du, Li Shao, Xiao Ma

  J. Semicond.  2015, 36(12): 125004
  doi: 10.1088/1674-4926/36/12/125004

  High-speed low-power voltage-programmed driving scheme for AMOLED displays

  Xingheng Xia, Weijing Wu, Xiaofeng Song, Guanming Li, Lei Zhou, Lirong Zhang, Miao Xu, Lei Wang, Junbiao Peng

  J. Semicond.  2015, 36(12): 125005
  doi: 10.1088/1674-4926/36/12/125005

• SEMICONDUCTOR TECHNOLOGY

  A new kind of chelating agent with low pH value applied in the TSV CMP slurry

  Jiao Hong, Yuling Liu, Baoguo Zhang, Xinhuan Niu, Liying Han

  J. Semicond.  2015, 36(12): 126001
  doi: 10.1088/1674-4926/36/12/126001

  Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

  Shaohua Jia, Yuling Liu, Chenwei Wang, Chenqi Yan

  J. Semicond.  2015, 36(12): 126002
  doi: 10.1088/1674-4926/36/12/126002

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