J. Semicond. 2015, 36(12): 121001
doi: 10.1088/1674-4926/36/12/121001
Variable range hopping conduction in n-CdSe samples at very low temperature
J. Semicond. 2015, 36(12): 122001
doi: 10.1088/1674-4926/36/12/122001
Theoretical study of defect impact on two-dimensional MoS2
J. Semicond. 2015, 36(12): 122002
doi: 10.1088/1674-4926/36/12/122002
Correlated barrier hopping of CuO nanoparticles
J. Semicond. 2015, 36(12): 122003
doi: 10.1088/1674-4926/36/12/122003
Enhancement of phosphors-solubility in ZnO by thermal annealing
J. Semicond. 2015, 36(12): 123001
doi: 10.1088/1674-4926/36/12/123001
J. Semicond. 2015, 36(12): 123002
doi: 10.1088/1674-4926/36/12/123002
Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature
J. Semicond. 2015, 36(12): 123003
doi: 10.1088/1674-4926/36/12/123003
J. Semicond. 2015, 36(12): 123004
doi: 10.1088/1674-4926/36/12/123004
J. Semicond. 2015, 36(12): 123005
doi: 10.1088/1674-4926/36/12/123005
Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC
J. Semicond. 2015, 36(12): 123006
doi: 10.1088/1674-4926/36/12/123006
Metal-catalyzed growth of In2O3 nanotowers using thermal evaporation and oxidation method
J. Semicond. 2015, 36(12): 123007
doi: 10.1088/1674-4926/36/12/123007
J. Semicond. 2015, 36(12): 124001
doi: 10.1088/1674-4926/36/12/124001
J. Semicond. 2015, 36(12): 124002
doi: 10.1088/1674-4926/36/12/124002
J. Semicond. 2015, 36(12): 124003
doi: 10.1088/1674-4926/36/12/124003
An insulated gate bipolar transistor with surface n-type barrier
J. Semicond. 2015, 36(12): 124004
doi: 10.1088/1674-4926/36/12/124004
J. Semicond. 2015, 36(12): 124005
doi: 10.1088/1674-4926/36/12/124005
Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique
J. Semicond. 2015, 36(12): 124006
doi: 10.1088/1674-4926/36/12/124006
Design of novel DDSCR with embedded PNP structure for ESD protection
J. Semicond. 2015, 36(12): 124007
doi: 10.1088/1674-4926/36/12/124007
Proton radiation effect of NPN-input operational amplifier under different bias conditions
J. Semicond. 2015, 36(12): 125001
doi: 10.1088/1674-4926/36/12/125001
J. Semicond. 2015, 36(12): 125002
doi: 10.1088/1674-4926/36/12/125002
A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC
J. Semicond. 2015, 36(12): 125003
doi: 10.1088/1674-4926/36/12/125003
A trimming technique for capacitive SAR ADC as sensor interface
J. Semicond. 2015, 36(12): 125004
doi: 10.1088/1674-4926/36/12/125004
High-speed low-power voltage-programmed driving scheme for AMOLED displays
J. Semicond. 2015, 36(12): 125005
doi: 10.1088/1674-4926/36/12/125005
A new kind of chelating agent with low pH value applied in the TSV CMP slurry
J. Semicond. 2015, 36(12): 126001
doi: 10.1088/1674-4926/36/12/126001
J. Semicond. 2015, 36(12): 126002
doi: 10.1088/1674-4926/36/12/126002