Archive

Volume 36, Issue 9, Sep 2015

• SEMICONDUCTOR PHYSICS

  Energy levels of magneto-optical polaron in spherical quantum dot——Part 1: Strong coupling

  A. J. Fotue, S. C. Kenfack, N. Issofa, M. Tiotsop, H. Fotsin, E. Mainimo, L. C. Fai

  J. Semicond.  2015, 36(9): 092001
  doi: 10.1088/1674-4926/36/9/092001

  Polarization effects and tests for crystalline silicon solar cells

  Weiming Lu, Zhigang Wang, Hui Hu

  J. Semicond.  2015, 36(9): 092002
  doi: 10.1088/1674-4926/36/9/092002

• SEMICONDUCTOR MATERIALS

  Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies

  T. Tibermacine, A. Merazga, M. Ledra, N. Ouhabab

  J. Semicond.  2015, 36(9): 093001
  doi: 10.1088/1674-4926/36/9/093001

  The effect of random dopant fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

  Arash Rezapour, Pegah Rezapour

  J. Semicond.  2015, 36(9): 093002
  doi: 10.1088/1674-4926/36/9/093002

  Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon

  Qinghua Mao, Junlin Liu, Xiaoming Wu, Jianli Zhang, Chuanbing Xiong, Chunlan Mo, Meng Zhang, Fengyi Jiang

  J. Semicond.  2015, 36(9): 093003
  doi: 10.1088/1674-4926/36/9/093003

  Characteristics of sputtered Y-doped IZO thin films and devices

  Dandan Wang, Qingpu Wang, Hanbin Wang, Xijian Zhang, Liwei Wu, Fujie Li, Shuai Yuan

  J. Semicond.  2015, 36(9): 093004
  doi: 10.1088/1674-4926/36/9/093004

  Effects of N concentration on electronic and optical properties of N-doped PbTiO₃

  Yinnü Zhao, Jinliang Yan

  J. Semicond.  2015, 36(9): 093005
  doi: 10.1088/1674-4926/36/9/093005

  Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method

  Rui Yang, Wanqi Jie, Xiaoyan Sun, Min Yang

  J. Semicond.  2015, 36(9): 093006
  doi: 10.1088/1674-4926/36/9/093006

• SEMICONDUCTOR DEVICES

  The impact of gate misalignment on the analog performance of a dual-material double gate junctionless transistor

  S. Intekhab Amin, R. K. Sarin

  J. Semicond.  2015, 36(9): 094001
  doi: 10.1088/1674-4926/36/9/094001

  Design and fabrication of a 3.3 kV 4H-SiC MOSFET

  Runhua Huang, Yonghong Tao, Song Bai, Gang Chen, Ling Wang, Ao Liu, Neng Wei, Yun Li, Zhifei Zhao

  J. Semicond.  2015, 36(9): 094002
  doi: 10.1088/1674-4926/36/9/094002

  Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO₂ after high temperature oxidation

  Yanyue Li, Xiaochuan Deng, Yunfeng Liu, Yanli Zhao, Chengzhan Li, Xixi Chen, Bo Zhang

  J. Semicond.  2015, 36(9): 094003
  doi: 10.1088/1674-4926/36/9/094003

  Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al₂O₃ as gate insulator

  Zheli Wang, Jianjun Zhou, Yuechan Kong, Cen Kong, Xun Dong, Yang Yang, Tangsheng Chen

  J. Semicond.  2015, 36(9): 094004
  doi: 10.1088/1674-4926/36/9/094004

  Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs

  Wen Fang, Eddy Simoen, Chikang Li, Marc Aoulaiche, Jun Luo, Chao Zhao, Cor Claeys

  J. Semicond.  2015, 36(9): 094005
  doi: 10.1088/1674-4926/36/9/094005

  Physical origin investigation of the flatband voltage roll off for metal-oxide-semiconductor device with high-k/metal gate structure

  Kai Han, Xiaolei Wang, Wenwu Wang

  J. Semicond.  2015, 36(9): 094006
  doi: 10.1088/1674-4926/36/9/094006

  4500 V SPT⁺ IGBT optimization on static and dynamic losses

  Qingyun Dai, Xiaoli Tian, Wenliang Zhang, Shuojin Lu, Yangjun Zhu

  J. Semicond.  2015, 36(9): 094007
  doi: 10.1088/1674-4926/36/9/094007

  Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory

  Xinkai Li, Zongliang Huo, Lei Jin, Dandan Jiang, Peizhen Hong, Qiang Xu, Zhaoyun Tang, Chunlong Li, Tianchun Ye

  J. Semicond.  2015, 36(9): 094008
  doi: 10.1088/1674-4926/36/9/094008

  Free-space communication based on quantum cascade laser

  Chuanwei Liu, Shenqiang Zhai, Jinchuan Zhang, Yuhong Zhou, Zhiwei Jia, Fengqi Liu, Zhanguo Wang

  J. Semicond.  2015, 36(9): 094009
  doi: 10.1088/1674-4926/36/9/094009

  Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

  Qing Ke, Shaoyang Tan, Songtao Liu, Dan Lu, Ruikang Zhang, Wei Wang, Chen Ji

  J. Semicond.  2015, 36(9): 094010
  doi: 10.1088/1674-4926/36/9/094010

  A novel PIN photodetector with double linear arrays for rainfall prediction

  Yan Yao, Xiong Liu, Li Yuan, Zhaohua Zhang, Tianling Ren

  J. Semicond.  2015, 36(9): 094011
  doi: 10.1088/1674-4926/36/9/094011

  Comment on Chen et al. "Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition", Electrochimica Acta, 2014

  Lara Valentic, Nima E. Gorji

  J. Semicond.  2015, 36(9): 094012
  doi: 10.1088/1674-4926/36/9/094012

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A full W-band low noise amplifier module for millimeter-wave applications

  Hua Zhao, Hongfei Yao, Peng Ding, Yongbo Su, Xiaoxi Ning, Zhi Jin, Xinyu Liu

  J. Semicond.  2015, 36(9): 095001
  doi: 10.1088/1674-4926/36/9/095001

  On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS

  Zhixiong Ren, Kefeng Zhang, Lanqi Liu, Cong Li, Xiaofei Chen, Dongsheng Liu, Zhenglin Liu, Xuecheng Zou

  J. Semicond.  2015, 36(9): 095002
  doi: 10.1088/1674-4926/36/9/095002

  A class-C VCO based Σ-Δ fraction-N frequency synthesizer with AFC for 802.11ah applications

  Xiaobao Yu, Siyang Han, Zongming Jin, Zhihua Wang, Baoyong Chi

  J. Semicond.  2015, 36(9): 095003
  doi: 10.1088/1674-4926/36/9/095003

  A novel pressure sensor calibration system based on a neural network

  Xiaojun Peng, Kuntao Yang, Xiuhua Yuan

  J. Semicond.  2015, 36(9): 095004
  doi: 10.1088/1674-4926/36/9/095004

  Millimeter wave band ultra wideband transmitter MMIC

  Ling Jin, Nathalie Rolland

  J. Semicond.  2015, 36(9): 095005
  doi: 10.1088/1674-4926/36/9/095005

  An extremely low power voltage reference with high PSRR for power-aware ASICs

  Jihai Duan, Dongyu Deng, Weilin Xu, Baolin Wei

  J. Semicond.  2015, 36(9): 095006
  doi: 10.1088/1674-4926/36/9/095006

  Modeling of channel mismatch in time-interleaved SAR ADC

  Dengquan Li, Liang Zhang, Zhangming Zhu, Yintang Yang

  J. Semicond.  2015, 36(9): 095007
  doi: 10.1088/1674-4926/36/9/095007

• SEMICONDUCTOR TECHNOLOGY

  A quantitative investigation of the influence with the components of the CMP alkali slurry on the polishing rate

  Shiyan Fan, Enhai Liu, Jun Zhang, Yuling Liu, Lei Wang, Kai Lin, Ming Sun, Lukui Shi

  J. Semicond.  2015, 36(9): 096001
  doi: 10.1088/1674-4926/36/9/096001

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