Energy levels of magneto-optical polaron in spherical quantum dot——Part 1: Strong coupling
J. Semicond. 2015, 36(9): 092001
doi: 10.1088/1674-4926/36/9/092001
Polarization effects and tests for crystalline silicon solar cells
J. Semicond. 2015, 36(9): 092002
doi: 10.1088/1674-4926/36/9/092002
J. Semicond. 2015, 36(9): 093001
doi: 10.1088/1674-4926/36/9/093001
J. Semicond. 2015, 36(9): 093002
doi: 10.1088/1674-4926/36/9/093002
Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon
J. Semicond. 2015, 36(9): 093003
doi: 10.1088/1674-4926/36/9/093003
Characteristics of sputtered Y-doped IZO thin films and devices
J. Semicond. 2015, 36(9): 093004
doi: 10.1088/1674-4926/36/9/093004
Effects of N concentration on electronic and optical properties of N-doped PbTiO3
J. Semicond. 2015, 36(9): 093005
doi: 10.1088/1674-4926/36/9/093005
J. Semicond. 2015, 36(9): 094001
doi: 10.1088/1674-4926/36/9/094001
Design and fabrication of a 3.3 kV 4H-SiC MOSFET
J. Semicond. 2015, 36(9): 094002
doi: 10.1088/1674-4926/36/9/094002
J. Semicond. 2015, 36(9): 094003
doi: 10.1088/1674-4926/36/9/094003
Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator
J. Semicond. 2015, 36(9): 094004
doi: 10.1088/1674-4926/36/9/094004
Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
J. Semicond. 2015, 36(9): 094005
doi: 10.1088/1674-4926/36/9/094005
J. Semicond. 2015, 36(9): 094006
doi: 10.1088/1674-4926/36/9/094006
4500 V SPT+ IGBT optimization on static and dynamic losses
J. Semicond. 2015, 36(9): 094007
doi: 10.1088/1674-4926/36/9/094007
J. Semicond. 2015, 36(9): 094008
doi: 10.1088/1674-4926/36/9/094008
Free-space communication based on quantum cascade laser
J. Semicond. 2015, 36(9): 094009
doi: 10.1088/1674-4926/36/9/094009
Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser
J. Semicond. 2015, 36(9): 094010
doi: 10.1088/1674-4926/36/9/094010
A novel PIN photodetector with double linear arrays for rainfall prediction
J. Semicond. 2015, 36(9): 094011
doi: 10.1088/1674-4926/36/9/094011
A full W-band low noise amplifier module for millimeter-wave applications
J. Semicond. 2015, 36(9): 095001
doi: 10.1088/1674-4926/36/9/095001
On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS
J. Semicond. 2015, 36(9): 095002
doi: 10.1088/1674-4926/36/9/095002
A class-C VCO based Σ-Δ fraction-N frequency synthesizer with AFC for 802.11ah applications
J. Semicond. 2015, 36(9): 095003
doi: 10.1088/1674-4926/36/9/095003
A novel pressure sensor calibration system based on a neural network
J. Semicond. 2015, 36(9): 095004
doi: 10.1088/1674-4926/36/9/095004
Millimeter wave band ultra wideband transmitter MMIC
J. Semicond. 2015, 36(9): 095005
doi: 10.1088/1674-4926/36/9/095005
An extremely low power voltage reference with high PSRR for power-aware ASICs
J. Semicond. 2015, 36(9): 095006
doi: 10.1088/1674-4926/36/9/095006
Modeling of channel mismatch in time-interleaved SAR ADC
J. Semicond. 2015, 36(9): 095007
doi: 10.1088/1674-4926/36/9/095007
J. Semicond. 2015, 36(9): 096001
doi: 10.1088/1674-4926/36/9/096001