Archive

Volume 37, Issue 1, Jan 2016

• INVITED PAPERS

  Advances and prospects in visible light communications

  Hongda Chen, Chunhui Wu, Honglei Li, Xiongbin Chen, Zongyu Gao, Shigang Cui, Qin Wang

  J. Semicond.  2016, 37(1): 011001
  doi: 10.1088/1674-4926/37/1/011001

• SEMICONDUCTOR MATERIALS

  Synthesis and electroluminescence characterization of a new aluminum complex,[8-hydroxyquinoline] bis[2, 2'bipyridine] aluminum Al(Bpy)₂q

  Rahul Kumar, Ritu Srivastava, Punita Singh

  J. Semicond.  2016, 37(1): 013001
  doi: 10.1088/1674-4926/37/1/013001

  New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials

  Xudong Qin, Yonghai Chen, Yu Liu, Laipan Zhu, Yuan Li, Qing Wu, Wei Huang

  J. Semicond.  2016, 37(1): 013002
  doi: 10.1088/1674-4926/37/1/013002

  Green preparation of Au nanoparticles for electrochemical detection of H₂O₂

  Wenchao Wang, Ye Ji, Yong Zhang, Ziying Wang, Tong Zhang

  J. Semicond.  2016, 37(1): 013003
  doi: 10.1088/1674-4926/37/1/013003

  Impact of Cu-rich growth on the Cu₂ZnSnSe₄ surface morphology and related solar cells behavior

  Ding Sun, Yang Ge, Li Zhang, Shengzhi Xu, Ze Chen, Ning Wang, Xuejiao Liang, Changchun Wei, Ying Zhao, Xiaodan Zhang

  J. Semicond.  2016, 37(1): 013004
  doi: 10.1088/1674-4926/37/1/013004

  Excellent performance of gas sensor based on In₂O₃-Fe₂O₃ nanotubes

  Li Liu, Shouchun Li, Xin Guo, Yue He, Lianyuan Wang

  J. Semicond.  2016, 37(1): 013005
  doi: 10.1088/1674-4926/37/1/013005

• SEMICONDUCTOR DEVICES

  Ageing of GaN HEMT devices:which degradation indicators?

  A. Divay, O. Latry, C. Duperrier, F. Temcamani

  J. Semicond.  2016, 37(1): 014001
  doi: 10.1088/1674-4926/37/1/014001

  Cu₂O-based solar cells using oxide semiconductors

  Tadatsugu Minami, Yuki Nishi, Toshihiro Miyata

  J. Semicond.  2016, 37(1): 014002
  doi: 10.1088/1674-4926/37/1/014002

  Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

  Tangudu Bharat Kumar, Bahniman Ghosh, Bhaskar Awadhiya, Ankit Kumar Verma

  J. Semicond.  2016, 37(1): 014003
  doi: 10.1088/1674-4926/37/1/014003

  Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell

  Haixiao Wang, Xinhe Zheng, Xinyuan Gan, Naiming Wang, Hui Yang

  J. Semicond.  2016, 37(1): 014004
  doi: 10.1088/1674-4926/37/1/014004

  Sentaurus^® based modeling and simulation for GFET's characteristic for ssDNA immobilization and hybridization

  Yunfang Jia, Cheng Ju

  J. Semicond.  2016, 37(1): 014005
  doi: 10.1088/1674-4926/37/1/014005

  Active multi-mode-interferometer broadband superluminescent diodes

  Feifei Wang, Peng Jin, Ju Wu, Yanhua Wu, Fajie Hu, Zhanguo Wang

  J. Semicond.  2016, 37(1): 014006
  doi: 10.1088/1674-4926/37/1/014006

  Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

  Xiang Li, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Ming Shi, Danmei Zhao, Wei Liu

  J. Semicond.  2016, 37(1): 014007
  doi: 10.1088/1674-4926/37/1/014007

  Anomalous luminescence efficiency enhancement of short-term aged GaN-based blue light-emitting diodes

  Kewei Cao, Binglei Fu, Zhe Liu, Lixia Zhao, Jinmin Li, Junxi Wang

  J. Semicond.  2016, 37(1): 014008
  doi: 10.1088/1674-4926/37/1/014008

  Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings

  Yunchang Xiao, Changyong Zhu, Rixing Wang

  J. Semicond.  2016, 37(1): 014009
  doi: 10.1088/1674-4926/37/1/014009

  Theoretical study on erbium ytterbium co-doped super-fluorescent fiber source

  Wentao Guo, Feng Du, Manqing Tan, Jian Jiao, Xiaofeng Guo

  J. Semicond.  2016, 37(1): 014010
  doi: 10.1088/1674-4926/37/1/014010

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch

  Zonghua Zheng, Lingling Sun, Jun Liu, Shengzhou Zhang

  J. Semicond.  2016, 37(1): 015001
  doi: 10.1088/1674-4926/37/1/015001

  Wide band low phase noise QVCO based on superharmonic injection locking

  Yalan Xu, Jinguang Jiang, Jianghua Liu

  J. Semicond.  2016, 37(1): 015002
  doi: 10.1088/1674-4926/37/1/015002

  A high-linearity and high-resolution delay line structure with a calibration algorithm in delay-based LINC transmitters

  Yue Han, Shushan Qiao, Yong Hei

  J. Semicond.  2016, 37(1): 015003
  doi: 10.1088/1674-4926/37/1/015003

  A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18 μm CMOS

  Dong Li, Qiao Meng, Fei Li

  J. Semicond.  2016, 37(1): 015004
  doi: 10.1088/1674-4926/37/1/015004

  A reference voltage in capacitor-resister hybrid SAR ADC for front-end readout system of CZT detector

  Wei Liu, Tingcun Wei, Bo Li, Lifeng Yang, Yongcai Hu

  J. Semicond.  2016, 37(1): 015005
  doi: 10.1088/1674-4926/37/1/015005

  A low jitter supply regulated charge pump PLL with self-calibration

  Min Chen, Yuntao Liu, Zhichao Li, Jingbo Xiao, Jie Chen

  J. Semicond.  2016, 37(1): 015006
  doi: 10.1088/1674-4926/37/1/015006

  PMGA and its application in area and power optimization for ternary FPRM circuit

  Pengjun Wang, Kangping Li, Huihong Zhang

  J. Semicond.  2016, 37(1): 015007
  doi: 10.1088/1674-4926/37/1/015007

• SEMICONDUCTOR TECHNOLOGY

  Numerical analysis of the non-equilibrium plasma flow in the gaseous electronics conference reference reactor

  Bijie Yang, Ning Zhou, Quanhua Sun

  J. Semicond.  2016, 37(1): 016001
  doi: 10.1088/1674-4926/37/1/016001

  Investigation of aluminum gate CMP in a novel alkaline solution

  Cuiyue Feng, Yuling Liu, Ming Sun, Wenqian Zhang, Jin Zhang, Shuai Wang

  J. Semicond.  2016, 37(1): 016002
  doi: 10.1088/1674-4926/37/1/016002

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