Advances and prospects in visible light communications
J. Semicond. 2016, 37(1): 011001
doi: 10.1088/1674-4926/37/1/011001
J. Semicond. 2016, 37(1): 013001
doi: 10.1088/1674-4926/37/1/013001
J. Semicond. 2016, 37(1): 013002
doi: 10.1088/1674-4926/37/1/013002
Green preparation of Au nanoparticles for electrochemical detection of H2O2
J. Semicond. 2016, 37(1): 013003
doi: 10.1088/1674-4926/37/1/013003
Impact of Cu-rich growth on the Cu2ZnSnSe4 surface morphology and related solar cells behavior
J. Semicond. 2016, 37(1): 013004
doi: 10.1088/1674-4926/37/1/013004
Excellent performance of gas sensor based on In2O3-Fe2O3 nanotubes
J. Semicond. 2016, 37(1): 013005
doi: 10.1088/1674-4926/37/1/013005
Ageing of GaN HEMT devices:which degradation indicators?
J. Semicond. 2016, 37(1): 014001
doi: 10.1088/1674-4926/37/1/014001
Cu2O-based solar cells using oxide semiconductors
J. Semicond. 2016, 37(1): 014002
doi: 10.1088/1674-4926/37/1/014002
Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys
J. Semicond. 2016, 37(1): 014003
doi: 10.1088/1674-4926/37/1/014003
Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell
J. Semicond. 2016, 37(1): 014004
doi: 10.1088/1674-4926/37/1/014004
J. Semicond. 2016, 37(1): 014005
doi: 10.1088/1674-4926/37/1/014005
Active multi-mode-interferometer broadband superluminescent diodes
J. Semicond. 2016, 37(1): 014006
doi: 10.1088/1674-4926/37/1/014006
Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer
J. Semicond. 2016, 37(1): 014007
doi: 10.1088/1674-4926/37/1/014007
J. Semicond. 2016, 37(1): 014008
doi: 10.1088/1674-4926/37/1/014008
Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings
J. Semicond. 2016, 37(1): 014009
doi: 10.1088/1674-4926/37/1/014009
Theoretical study on erbium ytterbium co-doped super-fluorescent fiber source
J. Semicond. 2016, 37(1): 014010
doi: 10.1088/1674-4926/37/1/014010
A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch
J. Semicond. 2016, 37(1): 015001
doi: 10.1088/1674-4926/37/1/015001
Wide band low phase noise QVCO based on superharmonic injection locking
J. Semicond. 2016, 37(1): 015002
doi: 10.1088/1674-4926/37/1/015002
J. Semicond. 2016, 37(1): 015003
doi: 10.1088/1674-4926/37/1/015003
A 10 bit 50 MS/s SAR ADC with partial split capacitor switching scheme in 0.18 μm CMOS
J. Semicond. 2016, 37(1): 015004
doi: 10.1088/1674-4926/37/1/015004
J. Semicond. 2016, 37(1): 015005
doi: 10.1088/1674-4926/37/1/015005
A low jitter supply regulated charge pump PLL with self-calibration
J. Semicond. 2016, 37(1): 015006
doi: 10.1088/1674-4926/37/1/015006
PMGA and its application in area and power optimization for ternary FPRM circuit
J. Semicond. 2016, 37(1): 015007
doi: 10.1088/1674-4926/37/1/015007
J. Semicond. 2016, 37(1): 016001
doi: 10.1088/1674-4926/37/1/016001
Investigation of aluminum gate CMP in a novel alkaline solution
J. Semicond. 2016, 37(1): 016002
doi: 10.1088/1674-4926/37/1/016002