Archive

Volume 37, Issue 3, Mar 2016

• INVITED REVIEW PAPERS

  High-quality ZnO growth, doping, and polarization effect

  Kun Tang, Shulin Gu, Jiandong Ye, Shunming Zhu, Rong Zhang, Youdou Zheng

  J. Semicond.  2016, 37(3): 031001
  doi: 10.1088/1674-4926/37/3/031001

• SEMICONDUCTOR PHYSICS

  Structural, optical and electrical properties of Sn_xS_y thin films grown by spray ultrasonic

  I. B. Kherchachi, A. Attaf, H. Saidi, A. Bouhdjer, H. Bendjedidi, Y. Benkhetta, R. Azizi

  J. Semicond.  2016, 37(3): 032001
  doi: 10.1088/1674-4926/37/3/032001

  First-principles calculation on electronic properties of B and N co-doping carbon nanotubes

  Jianhao Shi, Tong Zhao, Xuechao Li, Meng Huo, Rundong Wan

  J. Semicond.  2016, 37(3): 032002
  doi: 10.1088/1674-4926/37/3/032002

• SEMICONDUCTOR MATERIALS

  Effect of relaxation on the energetics and electronic structure of clean Ag₃PO₄(111) surface

  Xinguo Ma, Jie Yan, Na Liu, Lin Zhu, Bei Wang, Chuyun Huang, Hui Lü

  J. Semicond.  2016, 37(3): 033001
  doi: 10.1088/1674-4926/37/3/033001

  Pyrolysis preparation of WO₃ thin films using ammonium metatungstate DMF/water solution for efficient compact layers in planar perovskite solar cells

  Jincheng Zhang, Chengwu Shi, Junjun Chen, Chao Ying, Ni Wu, Mao Wang

  J. Semicond.  2016, 37(3): 033002
  doi: 10.1088/1674-4926/37/3/033002

• SEMICONDUCTOR DEVICES

  Direct tunneling gate current model for symmetric double gate junctionless transistor with SiO₂/high-k gate stacked dielectric

  S. Intekhab Amin, R. K. Sarin

  J. Semicond.  2016, 37(3): 034001
  doi: 10.1088/1674-4926/37/3/034001

  BE-SONOS flash memory along with metal gate and high-k dielectrics in tunnel barrier and its impact on charge retention dynamics

  Sonal Jain, Deepika Gupta, Vaibhav Neema, Santosh Vishwakarma

  J. Semicond.  2016, 37(3): 034002
  doi: 10.1088/1674-4926/37/3/034002

  Small-signal model parameter extraction for AlGaN/GaN HEMT

  Le Yu, Yingkui Zheng, Sheng Zhang, Lei Pang, Ke Wei, Xiaohua Ma

  J. Semicond.  2016, 37(3): 034003
  doi: 10.1088/1674-4926/37/3/034003

  Radiation-induced 1/f noise degradation of bipolar linear voltage regulator

  Qifeng Zhao, Yiqi Zhuang, Junlin Bao, Wei Hu

  J. Semicond.  2016, 37(3): 034004
  doi: 10.1088/1674-4926/37/3/034004

  Total dose effects on the g-r noise of JFET transistors

  Wei Hu, Yiqi Zhuang, Junlin Bao, Qifeng Zhao

  J. Semicond.  2016, 37(3): 034005
  doi: 10.1088/1674-4926/37/3/034005

  Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors

  Junjun Yuan, Zebo Fang, Yanyan Zhu, Bo Yao, Shiyan Liu, Gang He, Yongsheng Tan

  J. Semicond.  2016, 37(3): 034006
  doi: 10.1088/1674-4926/37/3/034006

  Design and fabrication of 1.55μm broad area slotted single-mode Fabry-Perot lasers

  Mengke Li, Lijun Yuan, Hongyan Yu, Qiang Kan, Shiyan Li, Junping Mi, Jiaoqing Pan

  J. Semicond.  2016, 37(3): 034007
  doi: 10.1088/1674-4926/37/3/034007

• SEMICONDUCTOR INTEGRATED CIRCUITS

  High performance 14-bit pipelined redundant signed digit ADC

  Swina Narula, Sujata Pandey

  J. Semicond.  2016, 37(3): 035001
  doi: 10.1088/1674-4926/37/3/035001

  A SHA-less 14-bit, 100-MS/s pipelined ADC with comparator offset cancellation in background

  Xiaofei Wang, Hong Zhang, Jie Zhang, Xin Du, Yue Hao

  J. Semicond.  2016, 37(3): 035002
  doi: 10.1088/1674-4926/37/3/035002

  A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR

  Hui Zhang, Dan Li, Lei Wan, Haijun Wang, Yuan Gao, Feili Zhu, Ziqi Wang, Xuexin Ding

  J. Semicond.  2016, 37(3): 035003
  doi: 10.1088/1674-4926/37/3/035003

  A 2.5 GS/s 14-bit D/A converter with 8 to 1 MUX

  Jun'an Zhang, Guangjun Li, Ruitao Zhang, Dongbing Fu, Jiaoxue Li, Yafeng Wei, Bo Yan, Jun Liu, Ruzhang Li

  J. Semicond.  2016, 37(3): 035004
  doi: 10.1088/1674-4926/37/3/035004

  A 0.18μm CMOS transmit physical coding sublayer IC for 100G Ethernet

  Weihua Ruan, Qingsheng Hu

  J. Semicond.  2016, 37(3): 035005
  doi: 10.1088/1674-4926/37/3/035005

  Optimal design analysis for thermal performance of high power 2.5D package

  Xiaoyang Liu, He Ma, Daquan Yu, Wenlu Chen, Xiaolong Wu

  J. Semicond.  2016, 37(3): 035006
  doi: 10.1088/1674-4926/37/3/035006

• SEMICONDUCTOR TECHNOLOGY

  Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(11$\bar{2}$2) aluminum nitride surface

  Khushnuma Asghar, D. Das

  J. Semicond.  2016, 37(3): 036001
  doi: 10.1088/1674-4926/37/3/036001

  Molecular dynamic simulation of non-melt laser annealing process

  Liren Yan, Dai Li, Wei Zhang, Zhihong Liu, Wei Zhou, Quan Wang

  J. Semicond.  2016, 37(3): 036002
  doi: 10.1088/1674-4926/37/3/036002

• CORRIGENDUM

  Corrigendum: Characteristics of HfO₂/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)

  Jinshun Bi, Zhengsheng Han

  J. Semicond.  2016, 37(3): 038001
  doi: 10.1088/1674-4926/37/3/038001

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