High-quality ZnO growth, doping, and polarization effect
J. Semicond. 2016, 37(3): 031001
doi: 10.1088/1674-4926/37/3/031001
Structural, optical and electrical properties of SnxSy thin films grown by spray ultrasonic
J. Semicond. 2016, 37(3): 032001
doi: 10.1088/1674-4926/37/3/032001
First-principles calculation on electronic properties of B and N co-doping carbon nanotubes
J. Semicond. 2016, 37(3): 032002
doi: 10.1088/1674-4926/37/3/032002
Effect of relaxation on the energetics and electronic structure of clean Ag3PO4(111) surface
J. Semicond. 2016, 37(3): 033001
doi: 10.1088/1674-4926/37/3/033001
J. Semicond. 2016, 37(3): 034001
doi: 10.1088/1674-4926/37/3/034001
J. Semicond. 2016, 37(3): 034002
doi: 10.1088/1674-4926/37/3/034002
Small-signal model parameter extraction for AlGaN/GaN HEMT
J. Semicond. 2016, 37(3): 034003
doi: 10.1088/1674-4926/37/3/034003
Radiation-induced 1/f noise degradation of bipolar linear voltage regulator
J. Semicond. 2016, 37(3): 034004
doi: 10.1088/1674-4926/37/3/034004
Total dose effects on the g-r noise of JFET transistors
J. Semicond. 2016, 37(3): 034005
doi: 10.1088/1674-4926/37/3/034005
Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors
J. Semicond. 2016, 37(3): 034006
doi: 10.1088/1674-4926/37/3/034006
Design and fabrication of 1.55μm broad area slotted single-mode Fabry-Perot lasers
J. Semicond. 2016, 37(3): 034007
doi: 10.1088/1674-4926/37/3/034007
High performance 14-bit pipelined redundant signed digit ADC
J. Semicond. 2016, 37(3): 035001
doi: 10.1088/1674-4926/37/3/035001
A SHA-less 14-bit, 100-MS/s pipelined ADC with comparator offset cancellation in background
J. Semicond. 2016, 37(3): 035002
doi: 10.1088/1674-4926/37/3/035002
A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR
J. Semicond. 2016, 37(3): 035003
doi: 10.1088/1674-4926/37/3/035003
A 2.5 GS/s 14-bit D/A converter with 8 to 1 MUX
J. Semicond. 2016, 37(3): 035004
doi: 10.1088/1674-4926/37/3/035004
A 0.18μm CMOS transmit physical coding sublayer IC for 100G Ethernet
J. Semicond. 2016, 37(3): 035005
doi: 10.1088/1674-4926/37/3/035005
Optimal design analysis for thermal performance of high power 2.5D package
J. Semicond. 2016, 37(3): 035006
doi: 10.1088/1674-4926/37/3/035006
J. Semicond. 2016, 37(3): 036001
doi: 10.1088/1674-4926/37/3/036001
Molecular dynamic simulation of non-melt laser annealing process
J. Semicond. 2016, 37(3): 036002
doi: 10.1088/1674-4926/37/3/036002
J. Semicond. 2016, 37(3): 038001
doi: 10.1088/1674-4926/37/3/038001