Archive

Volume 37, Issue 4, Apr 2016

• INVITED REVIEW PAPERS

  Fabrication techniques and applications of flexible graphene-based electronic devices

  Luqi Tao, Danyang Wang, Song Jiang, Ying Liu, Qianyi Xie, He Tian, Ningqin Deng, Xuefeng Wang, Yi Yang, Tianling Ren

  J. Semicond.  2016, 37(4): 041001
  doi: 10.1088/1674-4926/37/4/041001

• SEMICONDUCTOR PHYSICS

  Hybrid functional calculations on the band gap bowing parameters of In_xGa_1-xN

  Mei Lin, Yixu Xu, Jianhua Zhang, Shunqing Wu, Zizhong Zhu

  J. Semicond.  2016, 37(4): 042001
  doi: 10.1088/1674-4926/37/4/042001

  Electronic structure and optical properties of F-doped β-Ga₂O₃ from first principles calculations

  Jinliang Yan, Chong Qu

  J. Semicond.  2016, 37(4): 042002
  doi: 10.1088/1674-4926/37/4/042002

• SEMICONDUCTOR MATERIALS

  Low substrate temperature deposition of transparent and conducting ZnO: Al thin films by RF magnetron sputtering

  Ravindra Waykar, Amit Pawbake, Rupali Kulkarni, Ashok Jadhavar, Adinath Funde, Vaishali Waman, Rupesh Dewan, Habib Pathan, Sandesh Jadkar

  J. Semicond.  2016, 37(4): 043001
  doi: 10.1088/1674-4926/37/4/043001

• SEMICONDUCTOR DEVICES

  Characteristic diode parameters in thermally annealed Ni/p-InP contacts

  A. Turut, K. Ejderha, N. Yildirim, B. Abay

  J. Semicond.  2016, 37(4): 044001
  doi: 10.1088/1674-4926/37/4/044001

  Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications

  Nacereddine Lakhdar, Brahim Lakehal

  J. Semicond.  2016, 37(4): 044002
  doi: 10.1088/1674-4926/37/4/044002

  Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT

  J. Panda, K. Jena, R. Swain, T. R. Lenka

  J. Semicond.  2016, 37(4): 044003
  doi: 10.1088/1674-4926/37/4/044003

  A physical model of hole mobility for germanium-on-insulator pMOSFETs

  Wenyu Yuan, Jingping Xu, Lu Liu, Yong Huang, Zhixiang Cheng

  J. Semicond.  2016, 37(4): 044004
  doi: 10.1088/1674-4926/37/4/044004

  High current gain 4H-SiC bipolar junction transistor

  Yourun Zhang, Jinfei Shi, Ying Liu, Chengchun Sun, Fei Guo, Bo Zhang

  J. Semicond.  2016, 37(4): 044005
  doi: 10.1088/1674-4926/37/4/044005

  GaN-on-Si blue/white LEDs: epitaxy, chip, and package

  Qian Sun, Wei Yan, Meixin Feng, Zengcheng Li, Bo Feng, Hanmin Zhao, Hui Yang

  J. Semicond.  2016, 37(4): 044006
  doi: 10.1088/1674-4926/37/4/044006

  AlN/GaN high electron mobility transistors on sapphire substrates for Kaband applications

  Xubo Song, Guodong Gu, Yuangang Wang, Xin Tan, Xingye Zhou, Shaobo Dun, Peng Xu, Jiayun Yin, Bihua Wei, Zhihong Feng, Shujun Cai

  J. Semicond.  2016, 37(4): 044007
  doi: 10.1088/1674-4926/37/4/044007

  A sensitive charge scanning probe based on silicon single electron transistor

  Lina Su, Xinxing Li, Hua Qin, Xiaofeng Gu

  J. Semicond.  2016, 37(4): 044008
  doi: 10.1088/1674-4926/37/4/044008

  Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer

  Jiangmei Feng, Huajun Shen, Xiaohua Ma, Yun Bai, Jia Wu, Chengzhan Li, Kean Liu, Xinyu Liu

  J. Semicond.  2016, 37(4): 044009
  doi: 10.1088/1674-4926/37/4/044009

  Temperature-variable high-frequency dynamic modeling of PIN diode

  Shangbin Ye, Jiajia Zhang, Yicheng Zhang, Yongtao Yao

  J. Semicond.  2016, 37(4): 044010
  doi: 10.1088/1674-4926/37/4/044010

  Thermal analysis in high power GaAs-based laser diodes

  Xueqin Gong, Shiwei Feng, Yuan Yue, Junwei Yang, Jingwei Li

  J. Semicond.  2016, 37(4): 044011
  doi: 10.1088/1674-4926/37/4/044011

  A novel measuring method of clamping force for electrostatic chuck in semiconductor devices

  Kesheng Wang, Jia Cheng, Yin Zhong, Linhong Ji

  J. Semicond.  2016, 37(4): 044012
  doi: 10.1088/1674-4926/37/4/044012

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A low power CMOS VCO using inductive-biasing with high performance FoM

  Weihao Liu, Lu Huang

  J. Semicond.  2016, 37(4): 045001
  doi: 10.1088/1674-4926/37/4/045001

  Design of power balance SRAM for DPA-resistance

  Keji Zhou, Pengjun Wang, Liang Wen

  J. Semicond.  2016, 37(4): 045002
  doi: 10.1088/1674-4926/37/4/045002

  Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer

  Xiaoli Ren, Cheng Pang, Zheng Qin, Ye Ping, Feng Jiang, Kai Xue, Haiyan Liu, Daquan Yu

  J. Semicond.  2016, 37(4): 045003
  doi: 10.1088/1674-4926/37/4/045003

• SEMICONDUCTOR TECHNOLOGY

  Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

  Jin Zhang, Yuling Liu, Chenqi Yan, Yangang He, Baohong Gao

  J. Semicond.  2016, 37(4): 046001
  doi: 10.1088/1674-4926/37/4/046001

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