Fabrication techniques and applications of flexible graphene-based electronic devices
J. Semicond. 2016, 37(4): 041001
doi: 10.1088/1674-4926/37/4/041001
Hybrid functional calculations on the band gap bowing parameters of InxGa1-xN
J. Semicond. 2016, 37(4): 042001
doi: 10.1088/1674-4926/37/4/042001
Electronic structure and optical properties of F-doped β-Ga2O3 from first principles calculations
J. Semicond. 2016, 37(4): 042002
doi: 10.1088/1674-4926/37/4/042002
J. Semicond. 2016, 37(4): 043001
doi: 10.1088/1674-4926/37/4/043001
Characteristic diode parameters in thermally annealed Ni/p-InP contacts
J. Semicond. 2016, 37(4): 044001
doi: 10.1088/1674-4926/37/4/044001
Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications
J. Semicond. 2016, 37(4): 044002
doi: 10.1088/1674-4926/37/4/044002
Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT
J. Semicond. 2016, 37(4): 044003
doi: 10.1088/1674-4926/37/4/044003
A physical model of hole mobility for germanium-on-insulator pMOSFETs
J. Semicond. 2016, 37(4): 044004
doi: 10.1088/1674-4926/37/4/044004
High current gain 4H-SiC bipolar junction transistor
J. Semicond. 2016, 37(4): 044005
doi: 10.1088/1674-4926/37/4/044005
GaN-on-Si blue/white LEDs: epitaxy, chip, and package
J. Semicond. 2016, 37(4): 044006
doi: 10.1088/1674-4926/37/4/044006
AlN/GaN high electron mobility transistors on sapphire substrates for Kaband applications
J. Semicond. 2016, 37(4): 044007
doi: 10.1088/1674-4926/37/4/044007
A sensitive charge scanning probe based on silicon single electron transistor
J. Semicond. 2016, 37(4): 044008
doi: 10.1088/1674-4926/37/4/044008
Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer
J. Semicond. 2016, 37(4): 044009
doi: 10.1088/1674-4926/37/4/044009
Temperature-variable high-frequency dynamic modeling of PIN diode
J. Semicond. 2016, 37(4): 044010
doi: 10.1088/1674-4926/37/4/044010
Thermal analysis in high power GaAs-based laser diodes
J. Semicond. 2016, 37(4): 044011
doi: 10.1088/1674-4926/37/4/044011
A novel measuring method of clamping force for electrostatic chuck in semiconductor devices
J. Semicond. 2016, 37(4): 044012
doi: 10.1088/1674-4926/37/4/044012
A low power CMOS VCO using inductive-biasing with high performance FoM
J. Semicond. 2016, 37(4): 045001
doi: 10.1088/1674-4926/37/4/045001
Design of power balance SRAM for DPA-resistance
J. Semicond. 2016, 37(4): 045002
doi: 10.1088/1674-4926/37/4/045002
Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer
J. Semicond. 2016, 37(4): 045003
doi: 10.1088/1674-4926/37/4/045003
J. Semicond. 2016, 37(4): 046001
doi: 10.1088/1674-4926/37/4/046001