Advances and prospects in nitrides based light-emitting-diodes
J. Semicond. 2016, 37(6): 061001
doi: 10.1088/1674-4926/37/6/061001
Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD
J. Semicond. 2016, 37(6): 063001
doi: 10.1088/1674-4926/37/6/063001
Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell
J. Semicond. 2016, 37(6): 063002
doi: 10.1088/1674-4926/37/6/063002
Cubic AlN thin film formation on quartz substrate by pulse laser deposition
J. Semicond. 2016, 37(6): 063003
doi: 10.1088/1674-4926/37/6/063003
Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices
J. Semicond. 2016, 37(6): 064001
doi: 10.1088/1674-4926/37/6/064001
Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDRIMPATTs
J. Semicond. 2016, 37(6): 064002
doi: 10.1088/1674-4926/37/6/064002
Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs
J. Semicond. 2016, 37(6): 064003
doi: 10.1088/1674-4926/37/6/064003
Enhancement of solar cells parameters by periodic nanocylinders
J. Semicond. 2016, 37(6): 064004
doi: 10.1088/1674-4926/37/6/064004
Finite element analysis of expansion-matched submounts for high-power laser diodes packaging
J. Semicond. 2016, 37(6): 064005
doi: 10.1088/1674-4926/37/6/064005
J. Semicond. 2016, 37(6): 064006
doi: 10.1088/1674-4926/37/6/064006
p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes
J. Semicond. 2016, 37(6): 064007
doi: 10.1088/1674-4926/37/6/064007
Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers
J. Semicond. 2016, 37(6): 064008
doi: 10.1088/1674-4926/37/6/064008
Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT
J. Semicond. 2016, 37(6): 064009
doi: 10.1088/1674-4926/37/6/064009
J. Semicond. 2016, 37(6): 064010
doi: 10.1088/1674-4926/37/6/064010
The investigation of the zero temperature coefficient point of power MOSFET
J. Semicond. 2016, 37(6): 064011
doi: 10.1088/1674-4926/37/6/064011
Low-frequency noise characteristics in the MOSFETs processed in 65 nm technology
J. Semicond. 2016, 37(6): 064012
doi: 10.1088/1674-4926/37/6/064012
J. Semicond. 2016, 37(6): 064013
doi: 10.1088/1674-4926/37/6/064013
A superjunction structure using high-k insulator for power devices: theory and optimization
J. Semicond. 2016, 37(6): 064014
doi: 10.1088/1674-4926/37/6/064014
J. Semicond. 2016, 37(6): 064015
doi: 10.1088/1674-4926/37/6/064015
Total dose responses and reliability issues of 65 nm NMOSFETs
J. Semicond. 2016, 37(6): 064016
doi: 10.1088/1674-4926/37/6/064016
A 10 b 50 MS/s two-stage pipelined SAR ADC in 180 nm CMOS
J. Semicond. 2016, 37(6): 065001
doi: 10.1088/1674-4926/37/6/065001
A 14-bit 40-MHz analog front end for CCD application
J. Semicond. 2016, 37(6): 065002
doi: 10.1088/1674-4926/37/6/065002
DSOI-a novel structure enabling adjust circuit dynamically
J. Semicond. 2016, 37(6): 065003
doi: 10.1088/1674-4926/37/6/065003
A CMOS detection chip for amperometric sensors with chopper stabilized incremental ΔΣ ADC
J. Semicond. 2016, 37(6): 065004
doi: 10.1088/1674-4926/37/6/065004
An S/H circuit with parasitics optimized for IF-sampling
J. Semicond. 2016, 37(6): 065005
doi: 10.1088/1674-4926/37/6/065005
A double-stage start-up structure to limit the inrush current used in current mode charge pump
J. Semicond. 2016, 37(6): 065006
doi: 10.1088/1674-4926/37/6/065006
Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors
J. Semicond. 2016, 37(6): 065007
doi: 10.1088/1674-4926/37/6/065007