Archive

Volume 37, Issue 6, Jun 2016

• INVITED REVIEW PAPERS

  Advances and prospects in nitrides based light-emitting-diodes

  Jinmin Li, Zhe Liu, Zhiqiang Liu, Jianchang Yan, Tongbo Wei, Xiaoyan Yi, Junxi Wang

  J. Semicond.  2016, 37(6): 061001
  doi: 10.1088/1674-4926/37/6/061001

• SEMICONDUCTOR MATERIALS

  Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

  Guoguo Yan, Feng Zhang, Yingxi Niu, Fei Yang, Lei Wang, Wanshun Zhao, Guosheng Sun, Yiping Zeng

  J. Semicond.  2016, 37(6): 063001
  doi: 10.1088/1674-4926/37/6/063001

  Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell

  Kewei Cao, Tong Liu, Jingming Liu, Hui Xie, Dongyan Tao, Youwen Zhao, Zhiyuan Dong, Feng Hui

  J. Semicond.  2016, 37(6): 063002
  doi: 10.1088/1674-4926/37/6/063002

  Cubic AlN thin film formation on quartz substrate by pulse laser deposition

  Biju Zheng, Wen Hu

  J. Semicond.  2016, 37(6): 063003
  doi: 10.1088/1674-4926/37/6/063003

  Influence of tension-twisting deformations and defects on optical and electrical properties of B, N doped carbon nanotube superlattices

  Guili Liu, Yan Jiang, Yuanyuan Song, Shuang Zhou, Tianshuang Wang

  J. Semicond.  2016, 37(6): 063004
  doi: 10.1088/1674-4926/37/6/063004

• SEMICONDUCTOR DEVICES

  Comparison between Pt/TiO₂/Pt and Pt/TaO_X/TaO_Y/Pt based bipolar resistive switching devices

  Patrick W. C. Ho, Firas Odai Hatem, Haider Abbas F. Almurib, T. Nandha Kumar

  J. Semicond.  2016, 37(6): 064001
  doi: 10.1088/1674-4926/37/6/064001

  Large signal and noise properties of heterojunction Al_xGa_1-xAs/GaAs DDRIMPATTs

  Suranjana Banerjee, Monojit Mitra

  J. Semicond.  2016, 37(6): 064002
  doi: 10.1088/1674-4926/37/6/064002

  Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs

  Pramod Kumar Tiwari, Mukesh Kumar, Ramavathu Sakru Naik, Gopi Krishna Saramekala

  J. Semicond.  2016, 37(6): 064003
  doi: 10.1088/1674-4926/37/6/064003

  Enhancement of solar cells parameters by periodic nanocylinders

  Najdia Benaziez, Abdelhamid Ounissi, Safia Benaziez

  J. Semicond.  2016, 37(6): 064004
  doi: 10.1088/1674-4926/37/6/064004

  Finite element analysis of expansion-matched submounts for high-power laser diodes packaging

  Yuxi Ni, Xiaoyu Ma, Hongqi Jing, Suping Liu

  J. Semicond.  2016, 37(6): 064005
  doi: 10.1088/1674-4926/37/6/064005

  Electrical properties of Ge metal-oxide-semiconductor capacitors with high-k La₂O₃ gate dielectric incorporated by N or/and Ti

  Huoxi Xu, Jingping Xu

  J. Semicond.  2016, 37(6): 064006
  doi: 10.1088/1674-4926/37/6/064006

  p⁺-n^--n⁺-type power diode with crystalline/nanocrystalline Si mosaic electrodes

  Wensheng Wei, Chunxi Zhang

  J. Semicond.  2016, 37(6): 064007
  doi: 10.1088/1674-4926/37/6/064007

  Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers

  Pongthavornkamol Tiwat, Guoguo Liu, Tingting Yuan, Yingkui Zheng, Xinyu Liu

  J. Semicond.  2016, 37(6): 064008
  doi: 10.1088/1674-4926/37/6/064008

  Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT

  Chong Wang, Xiaoxiao Wei, Yunlong He, Xuefeng Zheng, Xiaohua Ma, Jincheng Zhang, Yue Hao

  J. Semicond.  2016, 37(6): 064009
  doi: 10.1088/1674-4926/37/6/064009

  Junction-temperature estimation in AlGaInP light-emitting diodes using the luminescence spectra method

  Jing Wen, Yumei Wen, Ping Li, Sanshan Wang

  J. Semicond.  2016, 37(6): 064010
  doi: 10.1088/1674-4926/37/6/064010

  The investigation of the zero temperature coefficient point of power MOSFET

  Bowen Zhang, Xiaoling Zhang, Wenwen Xiong, Shuojie She, Xuesong Xie

  J. Semicond.  2016, 37(6): 064011
  doi: 10.1088/1674-4926/37/6/064011

  Low-frequency noise characteristics in the MOSFETs processed in 65 nm technology

  Yuan Liu, Yurong Liu, Yujuan He, Bin Li, Yunfei En, Wenxiao Fang

  J. Semicond.  2016, 37(6): 064012
  doi: 10.1088/1674-4926/37/6/064012

  High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

  Tao Gao, Ruimin Xu, Kai Zhang, Yuechan Kong, Jianjun Zhou, Cen Kong, Xinxin Yu, Xun Dong, Tangsheng Chen

  J. Semicond.  2016, 37(6): 064013
  doi: 10.1088/1674-4926/37/6/064013

  A superjunction structure using high-k insulator for power devices: theory and optimization

  Mingmin Huang, Xingbi Chen

  J. Semicond.  2016, 37(6): 064014
  doi: 10.1088/1674-4926/37/6/064014

  Evaluation of light extraction efficiency for the light-emitting diodes based on the transfer matrix formalism and ray-tracing method

  Pingbo An, Li Wang, Hongxi Lu, Zhiguo Yu, Lei Liu, Xin Xi, Lixia Zhao, Junxi Wang, Jinmin Li

  J. Semicond.  2016, 37(6): 064015
  doi: 10.1088/1674-4926/37/6/064015

  Total dose responses and reliability issues of 65 nm NMOSFETs

  Dezhao Yu, Qiwen Zheng, Jiangwei Cui, Hang Zhou, Xuefeng Yu, Qi Guo

  J. Semicond.  2016, 37(6): 064016
  doi: 10.1088/1674-4926/37/6/064016

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 10 b 50 MS/s two-stage pipelined SAR ADC in 180 nm CMOS

  Yi Shen, Shubin Liu, Zhangming Zhu

  J. Semicond.  2016, 37(6): 065001
  doi: 10.1088/1674-4926/37/6/065001

  A 14-bit 40-MHz analog front end for CCD application

  Jingyu Wang, Zhangming Zhu, Shubin Liu

  J. Semicond.  2016, 37(6): 065002
  doi: 10.1088/1674-4926/37/6/065002

  DSOI-a novel structure enabling adjust circuit dynamically

  Chuang Gao, Xing Zhao, Kai Zhao, Jiantou Gao, Bingqing Xie, Fang Yu, Jiajun Luo

  J. Semicond.  2016, 37(6): 065003
  doi: 10.1088/1674-4926/37/6/065003

  A CMOS detection chip for amperometric sensors with chopper stabilized incremental ΔΣ ADC

  Min Chen, Yuntao Liu, Jingbo Xiao, Jie Chen

  J. Semicond.  2016, 37(6): 065004
  doi: 10.1088/1674-4926/37/6/065004

  An S/H circuit with parasitics optimized for IF-sampling

  Xuqiang Zheng, Fule Li, Zhijun Wang, Weitao Li, Wen Jia, Zhihua Wang, Shigang Yue

  J. Semicond.  2016, 37(6): 065005
  doi: 10.1088/1674-4926/37/6/065005

  A double-stage start-up structure to limit the inrush current used in current mode charge pump

  Cong Liu, Xinquan Lai, Hanxiao Du, Yuan Chi

  J. Semicond.  2016, 37(6): 065006
  doi: 10.1088/1674-4926/37/6/065006

  Design and performances of a low-noise and radiation-hardened readout ASIC for CdZnTe detectors

  Bo Gan, Tingcun Wei, Wu Gao, Yongcai Hu

  J. Semicond.  2016, 37(6): 065007
  doi: 10.1088/1674-4926/37/6/065007

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