CMOS mm-wave transceivers for Gbps wireless communication
J. Semicond. 2016, 37(7): 071001
doi: 10.1088/1674-4926/37/7/071001
Electronic structures and optical properties of Nb-doped SrTiO3 from first principles
J. Semicond. 2016, 37(7): 072001
doi: 10.1088/1674-4926/37/7/072001
J. Semicond. 2016, 37(7): 072002
doi: 10.1088/1674-4926/37/7/072002
Effects of defect states on the performance of perovskite solar cells
J. Semicond. 2016, 37(7): 072003
doi: 10.1088/1674-4926/37/7/072003
Influence of GaInP ordering on the performance of GaInP solar cells
J. Semicond. 2016, 37(7): 073001
doi: 10.1088/1674-4926/37/7/073001
Modeling and simulation of carbon nanotube field effect transistor and its circuit application
J. Semicond. 2016, 37(7): 074001
doi: 10.1088/1674-4926/37/7/074001
Photovoltaic performance of hybrid ITO/PEDOT: PSS/n-SnS/Al solar cell structure
J. Semicond. 2016, 37(7): 074002
doi: 10.1088/1674-4926/37/7/074002
fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm
J. Semicond. 2016, 37(7): 074003
doi: 10.1088/1674-4926/37/7/074003
Advanced BCD technology with vertical DMOS based on a semi-insulation structure
J. Semicond. 2016, 37(7): 074004
doi: 10.1088/1674-4926/37/7/074004
Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs
J. Semicond. 2016, 37(7): 074005
doi: 10.1088/1674-4926/37/7/074005
An improved temperature-dependent large signal model of microwave GaN HEMTs
J. Semicond. 2016, 37(7): 074006
doi: 10.1088/1674-4926/37/7/074006
J. Semicond. 2016, 37(7): 074007
doi: 10.1088/1674-4926/37/7/074007
Metal-to-metal antifuse with low programming voltage and low on-state resistance
J. Semicond. 2016, 37(7): 074008
doi: 10.1088/1674-4926/37/7/074008
Simulation and fabrication of thin film bulk acoustic wave resonator
J. Semicond. 2016, 37(7): 074009
doi: 10.1088/1674-4926/37/7/074009
The establishment of reliability model for LED lamps
J. Semicond. 2016, 37(7): 074010
doi: 10.1088/1674-4926/37/7/074010
A high efficiency all-PMOS charge pump for 3D NAND flash memory
J. Semicond. 2016, 37(7): 075001
doi: 10.1088/1674-4926/37/7/075001
A load balancing bufferless deflection router for network-on-chip
J. Semicond. 2016, 37(7): 075002
doi: 10.1088/1674-4926/37/7/075002
A dual-mode secure UHF RFID tag with a crypto engine in 0.13-μm CMOS
J. Semicond. 2016, 37(7): 075003
doi: 10.1088/1674-4926/37/7/075003
Improvements in performance and reliability for segmented linear LED drivers
J. Semicond. 2016, 37(7): 075004
doi: 10.1088/1674-4926/37/7/075004
A 1 V 186-μW 50-MS/s 10-bit subrange SAR ADC in 130-nm CMOS process
J. Semicond. 2016, 37(7): 075005
doi: 10.1088/1674-4926/37/7/075005