Archive

Volume 37, Issue 9, Sep 2016

• INVITED REVIEW PAPERS

  Photodetectors based on two dimensional materials

  Zheng Lou, Zhongzhu Liang, Guozhen Shen

  J. Semicond.  2016, 37(9): 091001
  doi: 10.1088/1674-4926/37/9/091001

• SEMICONDUCTOR PHYSICS

  Scaling relation of domain competition on (2+1)-dimensional ballistic deposition model with surface diffusion

  Kenyu Osada, Hiroyasu Katsuno, Toshiharu Irisawa, Yukio Saito

  J. Semicond.  2016, 37(9): 092001
  doi: 10.1088/1674-4926/37/9/092001

  Thermoelectric properties of Al-doped ZnO: experiment and simulation

  S. Jantrasee, P. Moontragoon, S. Pinitsoontorn

  J. Semicond.  2016, 37(9): 092002
  doi: 10.1088/1674-4926/37/9/092002

  Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling

  Ken K. Chin, Zimeng Cheng

  J. Semicond.  2016, 37(9): 092003
  doi: 10.1088/1674-4926/37/9/092003

  Magnetopolaron effects on the optical absorptions in a parabolic quantum dot

  Shihua Chen

  J. Semicond.  2016, 37(9): 092004
  doi: 10.1088/1674-4926/37/9/092004

• SEMICONDUCTOR MATERIALS

  Steady-state solution growth of microcrystalline silicon on nanocrystalline seed layers on glass

  R. Bansen, C. Ehlers, Th. Teubner, T. Boeck

  J. Semicond.  2016, 37(9): 093001
  doi: 10.1088/1674-4926/37/9/093001

  Optoelectronic properties and Seebeck coefficient in SnSe thin films

  K S Urmila, T A Namitha, J Rajani, R R Philip, B Pradeep

  J. Semicond.  2016, 37(9): 093002
  doi: 10.1088/1674-4926/37/9/093002

  Bulk heterojunction thin film formation by single and dual feed ultrasonic spray method for application in organic solar cells

  D. M. Marathe, H. S. Tarkas, M. S. Mahajan, G. S. Lonkar, S. R. Tak, J. V. Sali

  J. Semicond.  2016, 37(9): 093003
  doi: 10.1088/1674-4926/37/9/093003

  A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

  Shumei Lai, Danfeng Mao, Zhiwei Huang, Yihong Xu, Songyan Chen, Cheng Li, Wei Huang, Dingliang Tang

  J. Semicond.  2016, 37(9): 093004
  doi: 10.1088/1674-4926/37/9/093004

• SEMICONDUCTOR DEVICES

  A transformed analytical model for thermal noise of FinFET based on fringing field approximation

  Savitesh Madhulika Sharma, S. Dasgupta, M. V. Kartikeyan

  J. Semicond.  2016, 37(9): 094001
  doi: 10.1088/1674-4926/37/9/094001

  Investigation of Coulomb scattering on sSi/Si_0.5Ge_0.5/sSOI quantum-well p-MOSFETs

  Jiao Wen, Qiang Liu, Chang Liu, Yize Wang, Bo Zhang, Zhongying Xue, Zengfeng Di, Wenjie Yu, Qingtai Zhao

  J. Semicond.  2016, 37(9): 094002
  doi: 10.1088/1674-4926/37/9/094002

  Vertical-dual-source tunnel FETs with steeper subthreshold swing

  Zhi Jiang, Yiqi Zhuang, Cong Li, Ping Wang, Yuqi Liu

  J. Semicond.  2016, 37(9): 094003
  doi: 10.1088/1674-4926/37/9/094003

  A novel HBT trigger SCR in 0.35 μm SiGe BiCMOS technology

  Changjun Liao, Jizhi Liu, Zhiwei Liu

  J. Semicond.  2016, 37(9): 094004
  doi: 10.1088/1674-4926/37/9/094004

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A fully integrated CMOS super-regenerative wake-up receiver for EEG applications

  Yiqi Mao, Tongqiang Gao, Xiaodong Xu, Haigang Yang, Xinxia Cai

  J. Semicond.  2016, 37(9): 095001
  doi: 10.1088/1674-4926/37/9/095001

  A low-noise widely tunable Gm-C filter with frequency calibration

  Yu Wang, Jing Liu, Na Yan, Hao Min

  J. Semicond.  2016, 37(9): 095002
  doi: 10.1088/1674-4926/37/9/095002

  A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission

  Zhang Zhang, Ye Tan, Jianmin Zeng, Xu Han, Xin Cheng, Guangjun Xie

  J. Semicond.  2016, 37(9): 095003
  doi: 10.1088/1674-4926/37/9/095003

  Low-noise sub-harmonic injection locked multiloop ring oscillator

  Weilin Xu, Di Wu, Xueming Wei, Baolin Wei, Jihai Duan, Fadi Gui

  J. Semicond.  2016, 37(9): 095004
  doi: 10.1088/1674-4926/37/9/095004

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