High-speed photodetectors in optical communication system
J. Semicond. 2017, 38(12): 121001
doi: 10.1088/1674-4926/38/12/121001
Direct evidence of traps controlling the carriers transport in SnO2 nanobelts
J. Semicond. 2017, 38(12): 122001
doi: 10.1088/1674-4926/38/12/122001
J. Semicond. 2017, 38(12): 122002
doi: 10.1088/1674-4926/38/12/122002
Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device
J. Semicond. 2017, 38(12): 122003
doi: 10.1088/1674-4926/38/12/122003
Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films
J. Semicond. 2017, 38(12): 123001
doi: 10.1088/1674-4926/38/12/123001
Fabrication and modeling of multi-layer metal–insulator-metal capacitors
J. Semicond. 2017, 38(12): 123002
doi: 10.1088/1674-4926/38/12/123002
J. Semicond. 2017, 38(12): 124001
doi: 10.1088/1674-4926/38/12/124001
J. Semicond. 2017, 38(12): 124002
doi: 10.1088/1674-4926/38/12/124002
Design and optimization analysis of dual material gate on DG-IMOS
J. Semicond. 2017, 38(12): 124003
doi: 10.1088/1674-4926/38/12/124003
Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors
J. Semicond. 2017, 38(12): 124004
doi: 10.1088/1674-4926/38/12/124004
Design of a cylindrical LED substrate without radiator
J. Semicond. 2017, 38(12): 124005
doi: 10.1088/1674-4926/38/12/124005
SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs
J. Semicond. 2017, 38(12): 124006
doi: 10.1088/1674-4926/38/12/124006
J. Semicond. 2017, 38(12): 125001
doi: 10.1088/1674-4926/38/12/125001
All-optical temporal fractional order differentiator using an in-fiber ellipsoidal air-microcavity
J. Semicond. 2017, 38(12): 126001
doi: 10.1088/1674-4926/38/12/126001