Archive

Volume 38, Issue 12, Dec 2017

• INVITED REVIEW PAPERS

  High-speed photodetectors in optical communication system

  Zeping Zhao, Jianguo Liu, Yu Liu, Ninghua Zhu

  J. Semicond.  2017, 38(12): 121001
  doi: 10.1088/1674-4926/38/12/121001

• SEMICONDUCTOR PHYSICS

  Direct evidence of traps controlling the carriers transport in SnO₂ nanobelts

  Olivia M. Berengue, Adenilson J. Chiquito

  J. Semicond.  2017, 38(12): 122001
  doi: 10.1088/1674-4926/38/12/122001

  Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

  Neeraj Jain, Balwinder Raj

  J. Semicond.  2017, 38(12): 122002
  doi: 10.1088/1674-4926/38/12/122002

  Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

  Jiahua Zhang, Da Chen, Shihua Huang

  J. Semicond.  2017, 38(12): 122003
  doi: 10.1088/1674-4926/38/12/122003

• SEMICONDUCTOR MATERIALS

  Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films

  H. H. Güllü, M. Parlak

  J. Semicond.  2017, 38(12): 123001
  doi: 10.1088/1674-4926/38/12/123001

  Fabrication and modeling of multi-layer metal–insulator-metal capacitors

  R Karthik, A Akshaykranth

  J. Semicond.  2017, 38(12): 123002
  doi: 10.1088/1674-4926/38/12/123002

• SEMICONDUCTOR DEVICES

  Device and circuit analysis of a sub 20 nm double gate MOSFET with gate stack using a look-up-table-based approach

  S Chakraborty, A Dasgupta, R Das, M Kar, A Kundu, C K Sarkar

  J. Semicond.  2017, 38(12): 124001
  doi: 10.1088/1674-4926/38/12/124001

  Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

  Manoj Kumar, Yogesh Pratap, Subhasis Haldar, Mridula Gupta, R. S. Gupta

  J. Semicond.  2017, 38(12): 124002
  doi: 10.1088/1674-4926/38/12/124002

  Design and optimization analysis of dual material gate on DG-IMOS

  Sarabdeep Singh, Ashish Raman, Naveen Kumar

  J. Semicond.  2017, 38(12): 124003
  doi: 10.1088/1674-4926/38/12/124003

  Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

  Guifeng Chen, Mengxue Wang, Wenxian Yang, Ming Tan, Yuanyuan Wu, Pan Dai, Yuyang Huang, Shulong Lu

  J. Semicond.  2017, 38(12): 124004
  doi: 10.1088/1674-4926/38/12/124004

  Design of a cylindrical LED substrate without radiator

  Fan Tang, Zhenning Guo

  J. Semicond.  2017, 38(12): 124005
  doi: 10.1088/1674-4926/38/12/124005

  SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs

  Zhaohuan Tang, Xinghua Fu, Fashun Yang, Kaizhou Tan, Kui Ma, Xue Wu, Jiexing Lin

  J. Semicond.  2017, 38(12): 124006
  doi: 10.1088/1674-4926/38/12/124006

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μm CMOS process

  Jiafeng Wang, Xiangning Fan, Xiaoyang Shi, Zhigong Wang

  J. Semicond.  2017, 38(12): 125001
  doi: 10.1088/1674-4926/38/12/125001

• SEMICONDUCTOR TECHNOLOGY

  All-optical temporal fractional order differentiator using an in-fiber ellipsoidal air-microcavity

  Lihong Zhang, Shuqian Sun, Ming Li, Ninghua Zhu

  J. Semicond.  2017, 38(12): 126001
  doi: 10.1088/1674-4926/38/12/126001

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