Archive

Volume 38, Issue 2, Feb 2017

• SEMICONDUCTOR PHYSICS

  High enhancement factor of Au nano triangular prism structure for surface enhanced coherent anti-Stokes Raman scattering

  Zuyin Zhang, Guofeng Song

  J. Semicond.  2017, 38(2): 022001
  doi: 10.1088/1674-4926/38/2/022001

• SEMICONDUCTOR MATERIALS

  Substrate temperature dependent studies on properties of chemical spray pyrolysis deposited CdS thin films for solar cell applications

  Kiran Diwate, Amit Pawbake, Sachin Rondiya, Rupali Kulkarni, Ravi Waykar, Ashok Jadhavar, Avinash Rokade, Adinath Funde, Kakasaheb Mohite, Manish Shinde, Habib Pathan, Rupesh Devan, Sandesh Jadkar

  J. Semicond.  2017, 38(2): 023001
  doi: 10.1088/1674-4926/38/2/023001

  The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

  Jun Zhao, Guangxing Liang, Yang Zeng, Ping Fan, Juguang Hu, Jingting Luo, Dongping Zhang

  J. Semicond.  2017, 38(2): 023002
  doi: 10.1088/1674-4926/38/2/023002

  Mesoporous tin oxide nanospheres for a NO_x in air sensor

  Haonan Zhang, Ming Zhuo, Yazi Luo, Yuejiao Chen

  J. Semicond.  2017, 38(2): 023003
  doi: 10.1088/1674-4926/38/2/023003

  Ultra-wide tuning single channel filter based on one-dimensional photonic crystal with an air cavity

  Xiaodan Zhao, Yibiao Yang, Zhihui Chen, Yuncai Wang, Hongming Fei, Xiao Deng

  J. Semicond.  2017, 38(2): 023004
  doi: 10.1088/1674-4926/38/2/023004

• SEMICONDUCTOR DEVICES

  Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

  Sunny Anand, R.K. Sarin

  J. Semicond.  2017, 38(2): 024001
  doi: 10.1088/1674-4926/38/2/024001

  An enhanced high-speed multi-digit BCD adder using quantum-dot cellular automata

  D. Ajitha, K.V. Ramanaiah, V. Sumalatha

  J. Semicond.  2017, 38(2): 024002
  doi: 10.1088/1674-4926/38/2/024002

  High-voltage 4H-SiC PiN diodes with the etched implant junction termination extension

  Juntao Li, Chengquan Xiao, Xingliang Xu, Gang Dai, Lin Zhang, Yang Zhou, An Xiang, Yingkun Yang, Jian Zhang

  J. Semicond.  2017, 38(2): 024003
  doi: 10.1088/1674-4926/38/2/024003

  Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

  Huifang Xu, Yuehua Dai

  J. Semicond.  2017, 38(2): 024004
  doi: 10.1088/1674-4926/38/2/024004

  From parabolic approximation to evanescent mode analysis on SOI MOSFET

  Xiaolong Li, Liuhong Ma, Yuanfei Ai, Weihua Han

  J. Semicond.  2017, 38(2): 024005
  doi: 10.1088/1674-4926/38/2/024005

  Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

  Xin Wang, Cuiluan Wang, Xia Wu, Lingni Zhu, Hongqi Jing, Xiaoyu Ma, Suping Liu

  J. Semicond.  2017, 38(2): 024006
  doi: 10.1088/1674-4926/38/2/024006

• SEMICONDUCTOR INTEGRATED CIRCUITS

  6T SRAM cell analysis for DRV and read stability

  Ruchi, S.Dasgupta

  J. Semicond.  2017, 38(2): 025001
  doi: 10.1088/1674-4926/38/2/025001

  A monolithic K-band phase-locked loop for microwave radar application

  Guangyao Zhou, Shunli Ma, Ning Li, Fan Ye, Junyan Ren

  J. Semicond.  2017, 38(2): 025002
  doi: 10.1088/1674-4926/38/2/025002

  CNFET-based voltage rectifier circuit for biomedical implantable applications

  Yonggen Tu, Libo Qian, Yinshui Xia

  J. Semicond.  2017, 38(2): 025003
  doi: 10.1088/1674-4926/38/2/025003

  Micro EEG/ECG signal's chopper-stabilization amplifying chip for novel dry-contact electrode

  Jianhui Sun, Chunxing Wang, Gongtang Wang, Jinhui Wang, Qing Hua, Chuanfu Cheng, Xinxia Cai, Tao Yin, Yang Yu, Haigang Yang, Dengwang Li

  J. Semicond.  2017, 38(2): 025004
  doi: 10.1088/1674-4926/38/2/025004

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