Archive

Volume 38, Issue 4, Apr 2017

• SEMICONDUCTOR PHYSICS

  Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes

  Xiaohui Yi, Zhiwei Huang, Guangyang Lin, Cheng Li, Songyan Chen, Wei Huang, Jun Li, Jianyuan Wang

  J. Semicond.  2017, 38(4): 042001
  doi: 10.1088/1674-4926/38/4/042001

  The properties of an asymmetric Gaussian potential quantum well qubit in RbCl crystal

  Yong Sun, Xiujuan Miao, Zhaohua Ding, Jinglin Xiao

  J. Semicond.  2017, 38(4): 042002
  doi: 10.1088/1674-4926/38/4/042002

  Identification of strained black phosphorous by Raman spectroscopy

  Jiawei Wan, Junhong Guo, Fangren Hu

  J. Semicond.  2017, 38(4): 042003
  doi: 10.1088/1674-4926/38/4/042003

  The effect of differential temperatures on the latent heat in the nucleation of CdSe quantum dots

  Licai Hao, Zhongchen Bai, Shuijie Qin, Zhengping Zhang

  J. Semicond.  2017, 38(4): 042004
  doi: 10.1088/1674-4926/38/4/042004

• SEMICONDUCTOR MATERIALS

  Electrical and optical property of annealed Te-doped GaSb

  Jie Su, Tong Liu, Jingming Liu, Jun Yang, Guiying Shen, Yongbiao Bai, Zhiyuan Dong, Fangfang Wang, Youwen Zhao

  J. Semicond.  2017, 38(4): 043001
  doi: 10.1088/1674-4926/38/4/043001

  Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film

  Da Chen, Shihua Huang, Lü He

  J. Semicond.  2017, 38(4): 043002
  doi: 10.1088/1674-4926/38/4/043002

• SEMICONDUCTOR DEVICES

  22 nm In_0.75Ga_0.25As channel-based HEMTs on InP/GaAs substrates for future THz applications

  J. Ajayan, D. Nirmal

  J. Semicond.  2017, 38(4): 044001
  doi: 10.1088/1674-4926/38/4/044001

  Simulation of double junction In_0.46Ga_0.54N/Si tandem solar cell

  M. Benaicha, L. Dehimi, Nouredine Sengouga

  J. Semicond.  2017, 38(4): 044002
  doi: 10.1088/1674-4926/38/4/044002

  Performance analysis of SiGe double-gate N-MOSFET

  A. Singh, D. Kapoor, R. Sharma

  J. Semicond.  2017, 38(4): 044003
  doi: 10.1088/1674-4926/38/4/044003

  Optimization of junction termination extension for ultrahigh voltage 4H-SiC planar power devices

  Tongtong Yang, Song Bai, Runhua Huang

  J. Semicond.  2017, 38(4): 044004
  doi: 10.1088/1674-4926/38/4/044004

  Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB technique

  Tian Wang, Xiaoxin Cui, Yewen Ni, Kai Liao, Nan Liao, Dunshan Yu, Xiaole Cui

  J. Semicond.  2017, 38(4): 044005
  doi: 10.1088/1674-4926/38/4/044005

  Investigation of temperature-dependent small-signal performances of TB SOI MOSFETs

  Yuping Huang, Jun Liu, Kai Lü, Jing Chen

  J. Semicond.  2017, 38(4): 044006
  doi: 10.1088/1674-4926/38/4/044006

  Answer to comments on "Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition"

  Leifeng Chen, Hong He

  J. Semicond.  2017, 38(4): 044007
  doi: 10.1088/1674-4926/38/4/044007

  Simulation approach for optimization of ZnO/c-WSe₂ heterojunction solar cells

  Shihua Huang, Qiannan Li, Dan Chi, Xiuqing Meng, Lü He

  J. Semicond.  2017, 38(4): 044008
  doi: 10.1088/1674-4926/38/4/044008

  Design of the low-loss waveguide coil for interferometric integrated optic gyroscopes

  Yao Fei, Tianshu Yang, Zhaofeng Li, Wen Liu, Xiaodong Wang, Wanhua Zheng, Fuhua Yang

  J. Semicond.  2017, 38(4): 044009
  doi: 10.1088/1674-4926/38/4/044009

  Study on infrared image super-resolution reconstruction based on an improved POCS algorithm

  Shaosheng Dai, Junjie Cui, Dezhou Zhang, Qin Liu, Xiaoxiao Zhang

  J. Semicond.  2017, 38(4): 044010
  doi: 10.1088/1674-4926/38/4/044010

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

  Jiarong Guo

  J. Semicond.  2017, 38(4): 045001
  doi: 10.1088/1674-4926/38/4/045001

  A fully on-chip fast-transient NMOS low dropout voltage regulator with quasi floating gate pass element

  Han Wang, Chao Gou, Kai Luo

  J. Semicond.  2017, 38(4): 045002
  doi: 10.1088/1674-4926/38/4/045002

  A 10-bit 110 MHz SAR ADC with asynchronous trimming in 65-nm CMOS

  Daiguo Xu, Shiliu Xu, Xi Li, Jie Pu

  J. Semicond.  2017, 38(4): 045003
  doi: 10.1088/1674-4926/38/4/045003

• SEMICONDUCTOR TECHNOLOGY

  A method to transfer an individual graphene flake to a target position with a precision of sub-micrometer

  Yubing Wang, Weihong Yin, Qin Han, Xiaohong Yang, Han Ye, Dongdong Yin

  J. Semicond.  2017, 38(4): 046001
  doi: 10.1088/1674-4926/38/4/046001

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