J. Semicond. 2017, 38(4): 042001
doi: 10.1088/1674-4926/38/4/042001
The properties of an asymmetric Gaussian potential quantum well qubit in RbCl crystal
J. Semicond. 2017, 38(4): 042002
doi: 10.1088/1674-4926/38/4/042002
Identification of strained black phosphorous by Raman spectroscopy
J. Semicond. 2017, 38(4): 042003
doi: 10.1088/1674-4926/38/4/042003
The effect of differential temperatures on the latent heat in the nucleation of CdSe quantum dots
J. Semicond. 2017, 38(4): 042004
doi: 10.1088/1674-4926/38/4/042004
Electrical and optical property of annealed Te-doped GaSb
J. Semicond. 2017, 38(4): 043001
doi: 10.1088/1674-4926/38/4/043001
Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film
J. Semicond. 2017, 38(4): 043002
doi: 10.1088/1674-4926/38/4/043002
22 nm In0.75Ga0.25As channel-based HEMTs on InP/GaAs substrates for future THz applications
J. Semicond. 2017, 38(4): 044001
doi: 10.1088/1674-4926/38/4/044001
Simulation of double junction In0.46Ga0.54N/Si tandem solar cell
J. Semicond. 2017, 38(4): 044002
doi: 10.1088/1674-4926/38/4/044002
Performance analysis of SiGe double-gate N-MOSFET
J. Semicond. 2017, 38(4): 044003
doi: 10.1088/1674-4926/38/4/044003
Optimization of junction termination extension for ultrahigh voltage 4H-SiC planar power devices
J. Semicond. 2017, 38(4): 044004
doi: 10.1088/1674-4926/38/4/044004
J. Semicond. 2017, 38(4): 044005
doi: 10.1088/1674-4926/38/4/044005
Investigation of temperature-dependent small-signal performances of TB SOI MOSFETs
J. Semicond. 2017, 38(4): 044006
doi: 10.1088/1674-4926/38/4/044006
J. Semicond. 2017, 38(4): 044007
doi: 10.1088/1674-4926/38/4/044007
Simulation approach for optimization of ZnO/c-WSe2 heterojunction solar cells
J. Semicond. 2017, 38(4): 044008
doi: 10.1088/1674-4926/38/4/044008
Design of the low-loss waveguide coil for interferometric integrated optic gyroscopes
J. Semicond. 2017, 38(4): 044009
doi: 10.1088/1674-4926/38/4/044009
Study on infrared image super-resolution reconstruction based on an improved POCS algorithm
J. Semicond. 2017, 38(4): 044010
doi: 10.1088/1674-4926/38/4/044010
A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory
J. Semicond. 2017, 38(4): 045001
doi: 10.1088/1674-4926/38/4/045001
J. Semicond. 2017, 38(4): 045002
doi: 10.1088/1674-4926/38/4/045002
A 10-bit 110 MHz SAR ADC with asynchronous trimming in 65-nm CMOS
J. Semicond. 2017, 38(4): 045003
doi: 10.1088/1674-4926/38/4/045003
J. Semicond. 2017, 38(4): 046001
doi: 10.1088/1674-4926/38/4/046001