Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes
J. Semicond. 2017, 38(5): 051001
doi: 10.1088/1674-4926/38/5/051001
J. Semicond. 2017, 38(5): 053001
doi: 10.1088/1674-4926/38/5/053001
J. Semicond. 2017, 38(5): 053002
doi: 10.1088/1674-4926/38/5/053002
MWCNTs based flexible and stretchable strain sensors
J. Semicond. 2017, 38(5): 053003
doi: 10.1088/1674-4926/38/5/053003
J. Semicond. 2017, 38(5): 053004
doi: 10.1088/1674-4926/38/5/053004
The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering
J. Semicond. 2017, 38(5): 053005
doi: 10.1088/1674-4926/38/5/053005
J. Semicond. 2017, 38(5): 054001
doi: 10.1088/1674-4926/38/5/054001
Nanoscale Ⅲ-Ⅴ on Si-based junctionless tunnel transistor for EHF band applications
J. Semicond. 2017, 38(5): 054002
doi: 10.1088/1674-4926/38/5/054002
Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures
J. Semicond. 2017, 38(5): 054003
doi: 10.1088/1674-4926/38/5/054003
Thermal investigation of high-power GaAs-based laser diodes
J. Semicond. 2017, 38(5): 054004
doi: 10.1088/1674-4926/38/5/054004
Research on ZnO/Si heterojunction solar cells
J. Semicond. 2017, 38(5): 054005
doi: 10.1088/1674-4926/38/5/054005
Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors
J. Semicond. 2017, 38(5): 054006
doi: 10.1088/1674-4926/38/5/054006
A high-efficiency grating coupler between single-mode fiber and silicon-on-insulator waveguide
J. Semicond. 2017, 38(5): 054007
doi: 10.1088/1674-4926/38/5/054007
A 220 GHz dynamic frequency divider in 0.5 μm InP DHBT technology
J. Semicond. 2017, 38(5): 054008
doi: 10.1088/1674-4926/38/5/054008
Poly-Si TFTs integrated gate driver circuit with charge-sharing structure
J. Semicond. 2017, 38(5): 055001
doi: 10.1088/1674-4926/38/5/055001
A common-gate bootstrapped CMOS rectifier for VHF isolated DC-DC converter
J. Semicond. 2017, 38(5): 055002
doi: 10.1088/1674-4926/38/5/055002
A novel polishing technology for epoxy resin based on 355 nm UV laser
J. Semicond. 2017, 38(5): 056001
doi: 10.1088/1674-4926/38/5/056001
Investigation of etching method for fabricating deep through holes on ultra-highresistivity silicon
J. Semicond. 2017, 38(5): 056002
doi: 10.1088/1674-4926/38/5/056002