Archive

Volume 38, Issue 5, May 2017

• INVITED PAPERS

  Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes

  Degang Zhao, Jing Yang, Zongshun Liu, Ping Chen, Jianjun Zhu, Desheng Jiang, Yongsheng Shi, Hai Wang, Lihong Duan, Liqun Zhang, Hui Yang

  J. Semicond.  2017, 38(5): 051001
  doi: 10.1088/1674-4926/38/5/051001

• SEMICONDUCTOR MATERIALS

  Analysis of morphological, structural and electrical properties of annealed TiO₂ nanowires deposited by GLAD technique

  B. Shougaijam, R. Swain, C. Ngangbam, T.R. Lenka

  J. Semicond.  2017, 38(5): 053001
  doi: 10.1088/1674-4926/38/5/053001

  Electrodeposition and characterization of ZnO thin films using sodium thiosulfate as an additive for photovoltaic solar cells

  Hassiba Rahal, Rafiaa Kihal, Abed Mohamed Affoune, Mokhtar Ghers, Faycal Djazi

  J. Semicond.  2017, 38(5): 053002
  doi: 10.1088/1674-4926/38/5/053002

  MWCNTs based flexible and stretchable strain sensors

  Saeed Ahmed Khan, Min Gao, Yuechang Zhu, Zhuocheng Yan, Yuan Lin

  J. Semicond.  2017, 38(5): 053003
  doi: 10.1088/1674-4926/38/5/053003

  Photodeposited FeOOH vs electrodeposited Co-Pi to enhance nanoporous BiVO₄ for photoelectrochemical water splitting

  Aihua Jia, Miao Kan, Jinping Jia, Yixin Zhao

  J. Semicond.  2017, 38(5): 053004
  doi: 10.1088/1674-4926/38/5/053004

  The TCR of Ni_24.9Cr_72.5Si_2.6 thin films deposited by DC and RF magnetronsputtering

  Bing Cheng, Yijun Yin, Jianqiang Han, Jie Zhang

  J. Semicond.  2017, 38(5): 053005
  doi: 10.1088/1674-4926/38/5/053005

• SEMICONDUCTOR DEVICES

  Study of the effect of switching speed of the a-SiC/c-Si (p)-based, thyristor-like, ultra-high-speed switches, using two-dimensional simulation techniques

  Evangelos I. Dimitriadis, Nikolaos Georgoulas

  J. Semicond.  2017, 38(5): 054001
  doi: 10.1088/1674-4926/38/5/054001

  Nanoscale Ⅲ-Ⅴ on Si-based junctionless tunnel transistor for EHF band applications

  Yogesh Goswami, Pranav Asthana, Bahniman Ghosh

  J. Semicond.  2017, 38(5): 054002
  doi: 10.1088/1674-4926/38/5/054002

  Influence of Al₂O₃ barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures

  Abdulkerim Karabulut, Hasan Efeoglu, Abdulmecit Turut

  J. Semicond.  2017, 38(5): 054003
  doi: 10.1088/1674-4926/38/5/054003

  Thermal investigation of high-power GaAs-based laser diodes

  Jichuan Liu, Cuiluan Wang, Suping Liu, Xiaoyu Ma

  J. Semicond.  2017, 38(5): 054004
  doi: 10.1088/1674-4926/38/5/054004

  Research on ZnO/Si heterojunction solar cells

  Li Chen, Xinliang Chen, Yiming Liu, Ying Zhao, Xiaodan Zhang

  J. Semicond.  2017, 38(5): 054005
  doi: 10.1088/1674-4926/38/5/054005

  Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors

  Han Wang, Shilong Li, Honglou Zhen, Xiaofei Nie, Gaoshan Huang, Yongfeng Mei, Wei Lu

  J. Semicond.  2017, 38(5): 054006
  doi: 10.1088/1674-4926/38/5/054006

  A high-efficiency grating coupler between single-mode fiber and silicon-on-insulator waveguide

  Rongrui Liu, Yubing Wang, Dongdong Yin, Han Ye, Xiaohong Yang, Qin Han

  J. Semicond.  2017, 38(5): 054007
  doi: 10.1088/1674-4926/38/5/054007

  A 220 GHz dynamic frequency divider in 0.5 μm InP DHBT technology

  Wei Cheng, Youtao Zhang, Yuan Wang, Bin Niu, Haiyan Lu, Long Chang, Junling Xie

  J. Semicond.  2017, 38(5): 054008
  doi: 10.1088/1674-4926/38/5/054008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Poly-Si TFTs integrated gate driver circuit with charge-sharing structure

  Meng Chen, Jiefeng Lei, Shengxiang Huang, Congwei Liao, Lianwen Deng

  J. Semicond.  2017, 38(5): 055001
  doi: 10.1088/1674-4926/38/5/055001

  A common-gate bootstrapped CMOS rectifier for VHF isolated DC-DC converter

  Dongfang Pan, Feng Zhang, Lu Huang, Jinliang Li

  J. Semicond.  2017, 38(5): 055002
  doi: 10.1088/1674-4926/38/5/055002

• SEMICONDUCTOR TECHNOLOGY

  A novel polishing technology for epoxy resin based on 355 nm UV laser

  Xinling Meng, Luqi Tao, Zhaolin Liu, Yi Yang, Tianling Ren

  J. Semicond.  2017, 38(5): 056001
  doi: 10.1088/1674-4926/38/5/056001

  Investigation of etching method for fabricating deep through holes on ultra-highresistivity silicon

  Lin Du, Shengrui Xu, Ying Wang, ling Lü, Jincheng Zhang, Yue Hao

  J. Semicond.  2017, 38(5): 056002
  doi: 10.1088/1674-4926/38/5/056002

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