Archive

Volume 38, Issue 6, Jun 2017

• SEMICONDUCTOR PHYSICS

  Differential optical gain in a GaInN/AlGaN quantum dot

  K. Jaya Bala, A. John Peter

  J. Semicond.  2017, 38(6): 062001
  doi: 10.1088/1674-4926/38/6/062001

  The effects of deep-level defects on the electrical properties of Cd_0.9Zn_0.1Te crystals

  Pengfei Wang, Ruihua Nan, Zengyun Jian

  J. Semicond.  2017, 38(6): 062002
  doi: 10.1088/1674-4926/38/6/062002

  Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system

  Yongle Lou, Yuming Zhang, Hui Guo, Daqing Xu, Yimen Zhang

  J. Semicond.  2017, 38(6): 062003
  doi: 10.1088/1674-4926/38/6/062003

• SEMICONDUCTOR MATERIALS

  Effect of SnCl₂ and SnCl₄ precursors on SnS_x thin films prepared by ultrasonic spray pyrolysis

  Z. Hadef, K. Kamli, A. Attaf, M.S. Aida, B. Chouial

  J. Semicond.  2017, 38(6): 063001
  doi: 10.1088/1674-4926/38/6/063001

  Improving the photocatalytic performance of TiO₂ via hybridizing with graphene

  K S Divya, Athulya K Madhu, T U Umadevi, T Suprabha, P. Radhakrishnan Nair, Suresh Mathew

  J. Semicond.  2017, 38(6): 063002
  doi: 10.1088/1674-4926/38/6/063002

  A simple chemical route to synthesize the umangite phase of copper selenide (Cu₃Se₂) thin film at room temperature

  Balasaheb M. Palve, Sandesh R. Jadkar, Habib M. Pathan

  J. Semicond.  2017, 38(6): 063003
  doi: 10.1088/1674-4926/38/6/063003

  Comparative research on the influence of varied Al component on the active layer of AlGaN photocathode

  Minyou He, Liang Chen, Lingai Su, Lin Yin, Yunsheng Qian

  J. Semicond.  2017, 38(6): 063004
  doi: 10.1088/1674-4926/38/6/063004

• SEMICONDUCTOR DEVICES

  Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

  V. Rajagopal Reddy, B. Asha, Chel-Jong Choi

  J. Semicond.  2017, 38(6): 064001
  doi: 10.1088/1674-4926/38/6/064001

  Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

  D.K. Panda, T.R. Lenka

  J. Semicond.  2017, 38(6): 064002
  doi: 10.1088/1674-4926/38/6/064002

  A sensitivity analysis of millimeter wave characteristics of SiC IMPATT diodes

  S K Swain, J Pradhan, G N Dash, S R Pattanaik

  J. Semicond.  2017, 38(6): 064003
  doi: 10.1088/1674-4926/38/6/064003

  Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications

  M. Benhaliliba, C.E. Benouis, M.S. Aida, A. Ayeshamariam

  J. Semicond.  2017, 38(6): 064004
  doi: 10.1088/1674-4926/38/6/064004

  Improving the peak current density of resonant tunneling diode based on InP substrate

  Zhiqiang Li, Hailin Tang, Haitao Liu, Yi Liang, Qian Li, Ning An, Jianping Zeng, Wenjie Wang, Yongzhong Xiong

  J. Semicond.  2017, 38(6): 064005
  doi: 10.1088/1674-4926/38/6/064005

  Artificial neuron synapse transistor based on silicon nanomembrane on plastic substrate

  Minjie Liu, Gaoshan Huang, Ping Feng, Qinglei Guo, Feng Shao, Ziao Tian, Gongjin Li, Qing Wan, Yongfeng Mei

  J. Semicond.  2017, 38(6): 064006
  doi: 10.1088/1674-4926/38/6/064006

  Laser at 532 nm by intracavity frequency-doubling in BBO

  Xiandan Yuan, Jinsong Wang, Yongqi Chen, Yulong Wu, Yunfei Qi, Meijiao Sun, Qi Wang

  J. Semicond.  2017, 38(6): 064007
  doi: 10.1088/1674-4926/38/6/064007

  Design of MCI single and symmetrical on-chip spiral inductors

  Bo Han, Shibing Wang, Xiaofeng Shi

  J. Semicond.  2017, 38(6): 064008
  doi: 10.1088/1674-4926/38/6/064008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  An X-band 22.5°/45° digital phase shifter based on switched filter networks

  Pengpeng Sun, Hui Liu, Miao Geng, Rong Zhang, Qi Wang, Weijun Luo

  J. Semicond.  2017, 38(6): 065001
  doi: 10.1088/1674-4926/38/6/065001

  60 V tolerance full symmetrical switch for battery monitor IC

  Qidong Zhang, Yintang Yang, Changchun Chai

  J. Semicond.  2017, 38(6): 065002
  doi: 10.1088/1674-4926/38/6/065002

  A new sensitivity model with blank space for layout optimization

  Junping Wang, Yao Wu, Shigang Liu, Runsen Xing

  J. Semicond.  2017, 38(6): 065003
  doi: 10.1088/1674-4926/38/6/065003

  Scalable wideband equivalent circuit model for silicon-based on-chip transmission lines

  Hansheng Wang, Weiliang He, Minghui Zhang, Lu Tang

  J. Semicond.  2017, 38(6): 065004
  doi: 10.1088/1674-4926/38/6/065004

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