Differential optical gain in a GaInN/AlGaN quantum dot
J. Semicond. 2017, 38(6): 062001
doi: 10.1088/1674-4926/38/6/062001
The effects of deep-level defects on the electrical properties of Cd0.9Zn0.1Te crystals
J. Semicond. 2017, 38(6): 062002
doi: 10.1088/1674-4926/38/6/062002
Study on the mechanism of perpendicular magnetic anisotropy in Ta/CoFeB/MgO system
J. Semicond. 2017, 38(6): 062003
doi: 10.1088/1674-4926/38/6/062003
Effect of SnCl2 and SnCl4 precursors on SnSx thin films prepared by ultrasonic spray pyrolysis
J. Semicond. 2017, 38(6): 063001
doi: 10.1088/1674-4926/38/6/063001
Improving the photocatalytic performance of TiO2 via hybridizing with graphene
J. Semicond. 2017, 38(6): 063002
doi: 10.1088/1674-4926/38/6/063002
J. Semicond. 2017, 38(6): 063003
doi: 10.1088/1674-4926/38/6/063003
J. Semicond. 2017, 38(6): 063004
doi: 10.1088/1674-4926/38/6/063004
J. Semicond. 2017, 38(6): 064001
doi: 10.1088/1674-4926/38/6/064001
J. Semicond. 2017, 38(6): 064002
doi: 10.1088/1674-4926/38/6/064002
A sensitivity analysis of millimeter wave characteristics of SiC IMPATT diodes
J. Semicond. 2017, 38(6): 064003
doi: 10.1088/1674-4926/38/6/064003
Fabrication of a novel MOS diode by indium incorporation control for microelectronic applications
J. Semicond. 2017, 38(6): 064004
doi: 10.1088/1674-4926/38/6/064004
Improving the peak current density of resonant tunneling diode based on InP substrate
J. Semicond. 2017, 38(6): 064005
doi: 10.1088/1674-4926/38/6/064005
Artificial neuron synapse transistor based on silicon nanomembrane on plastic substrate
J. Semicond. 2017, 38(6): 064006
doi: 10.1088/1674-4926/38/6/064006
Laser at 532 nm by intracavity frequency-doubling in BBO
J. Semicond. 2017, 38(6): 064007
doi: 10.1088/1674-4926/38/6/064007
Design of MCI single and symmetrical on-chip spiral inductors
J. Semicond. 2017, 38(6): 064008
doi: 10.1088/1674-4926/38/6/064008
An X-band 22.5°/45° digital phase shifter based on switched filter networks
J. Semicond. 2017, 38(6): 065001
doi: 10.1088/1674-4926/38/6/065001
60 V tolerance full symmetrical switch for battery monitor IC
J. Semicond. 2017, 38(6): 065002
doi: 10.1088/1674-4926/38/6/065002
A new sensitivity model with blank space for layout optimization
J. Semicond. 2017, 38(6): 065003
doi: 10.1088/1674-4926/38/6/065003
Scalable wideband equivalent circuit model for silicon-based on-chip transmission lines
J. Semicond. 2017, 38(6): 065004
doi: 10.1088/1674-4926/38/6/065004