Archive

Volume 38, Issue 8, Aug 2017

• SEMICONDUCTOR PHYSICS

  ZnO_1-xTe_x and ZnO_1-xS_x semiconductor alloys as competent materials for opto-electronic and solar cell applications:a comparative analysis

  Utsa Das, Partha P. Pal

  J. Semicond.  2017, 38(8): 082001
  doi: 10.1088/1674-4926/38/8/082001

  Controllable persistent spin-polarized charge current in a Rashba ring

  Feng Liang, Benling Gao, Jun Zhang, Yu Gu

  J. Semicond.  2017, 38(8): 082002
  doi: 10.1088/1674-4926/38/8/082002

• SEMICONDUCTOR MATERIALS

  First-principles study of p-type ZnO by S-Na co-doping

  Xingyi Tan, Qiang Li, Yongdan Zhu

  J. Semicond.  2017, 38(8): 083001
  doi: 10.1088/1674-4926/38/8/083001

  Comparative study on the influence of Al component at GaAlAs layer for GaAs/AlGaAs photocathode

  Yuan Xu, Benkang Chang, Xinlong Chen, Yunsheng Qian

  J. Semicond.  2017, 38(8): 083002
  doi: 10.1088/1674-4926/38/8/083002

• SEMICONDUCTOR DEVICES

  30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

  P. Murugapandiyan, S. Ravimaran, J. William

  J. Semicond.  2017, 38(8): 084001
  doi: 10.1088/1674-4926/38/8/084001

  Statistically modeling I-V characteristics of CNT-FET with LASSO

  Dongsheng Ma, Zuochang Ye, Yan Wang

  J. Semicond.  2017, 38(8): 084002
  doi: 10.1088/1674-4926/38/8/084002

  Resistive switching characteristic of electrolyte-oxide-semiconductor structures

  Xiaoyu Chen, Hao Wang, Gongchen Sun, Xiaoyu Ma, Jianguang Gao, Wengang Wu

  J. Semicond.  2017, 38(8): 084003
  doi: 10.1088/1674-4926/38/8/084003

  Investigation on interfacial and electrical properties of Ge MOS capacitor with different NH₃-plasma treatment procedure

  Xiaoyu Liu, Jingping Xu, Lu Liu, Zhixiang Cheng, Yong Huang, Jingkang Gong

  J. Semicond.  2017, 38(8): 084004
  doi: 10.1088/1674-4926/38/8/084004

  Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure

  Chenglin Qi, Yang Huang, Teng Zhan, Qinjin Wang, Xiaoyan Yi, Zhiqiang Liu

  J. Semicond.  2017, 38(8): 084005
  doi: 10.1088/1674-4926/38/8/084005

  Theoretical simulation of performances in CIGS thin-film solar cells with cadmium-free buffer layer

  Kang Luo, Yulin Sun, Liyu Zhou, Fang Wang, Fang Wu

  J. Semicond.  2017, 38(8): 084006
  doi: 10.1088/1674-4926/38/8/084006

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology

  Xi Wang, Bichan Zhang, Hua Zhao, Yongbo Su, Asif Muhammad, Dong Guo, Zhi Jin

  J. Semicond.  2017, 38(8): 085001
  doi: 10.1088/1674-4926/38/8/085001

  A high-speed power detector MMIC for E-band communication

  Linpu Huang, Qiang Hu, Jian Zhang

  J. Semicond.  2017, 38(8): 085002
  doi: 10.1088/1674-4926/38/8/085002

  A 500-600 MHz GaN power amplifier with RC-LC stability network

  Xinyu Ma, Baoxing Duan, Yintang Yang

  J. Semicond.  2017, 38(8): 085003
  doi: 10.1088/1674-4926/38/8/085003

  The design of miniaturized broadband power divider utilizing GaAs-based IPD process and equivalent circuit model

  Ying Lu, Liang Shen, Jiabo Wang, Ya Shen

  J. Semicond.  2017, 38(8): 085004
  doi: 10.1088/1674-4926/38/8/085004

  An 8 bit 1 MS/s SAR ADC with 7.72-ENOB

  Jihai Duan, Zhiyong Zhu, Jinli Deng, Weilin Xu

  J. Semicond.  2017, 38(8): 085005
  doi: 10.1088/1674-4926/38/8/085005

  A high sensitive 66 dB linear dynamic range receiver for 3-D laser radar

  Rui Ma, Hao Zheng, Zhangming Zhu

  J. Semicond.  2017, 38(8): 085006
  doi: 10.1088/1674-4926/38/8/085006

  On the design of high-speed energy-efficient successive-approximation logic for asynchronous SAR ADCs

  Jiaqi Yang, Ting Li, Mingyuan Yu, Shuangshuang Zhang, Fujiang Lin, Lin He

  J. Semicond.  2017, 38(8): 085007
  doi: 10.1088/1674-4926/38/8/085007

  A 4 Gbps current-mode transmitter for 12-bit 250 MSPS ADC

  Zhenhai Chen, Zongguang Yu, Jinghe Wei, Dejin Zhou, Xiaobo Su, Jiaxuan Zou

  J. Semicond.  2017, 38(8): 085008
  doi: 10.1088/1674-4926/38/8/085008

  Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell

  Haisong Li, Longsheng Wu, Bo Yang, Yihu Jiang

  J. Semicond.  2017, 38(8): 085009
  doi: 10.1088/1674-4926/38/8/085009

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