J. Semicond. 2017, 38(8): 082001
doi: 10.1088/1674-4926/38/8/082001
Controllable persistent spin-polarized charge current in a Rashba ring
J. Semicond. 2017, 38(8): 082002
doi: 10.1088/1674-4926/38/8/082002
First-principles study of p-type ZnO by S-Na co-doping
J. Semicond. 2017, 38(8): 083001
doi: 10.1088/1674-4926/38/8/083001
Comparative study on the influence of Al component at GaAlAs layer for GaAs/AlGaAs photocathode
J. Semicond. 2017, 38(8): 083002
doi: 10.1088/1674-4926/38/8/083002
J. Semicond. 2017, 38(8): 084001
doi: 10.1088/1674-4926/38/8/084001
Statistically modeling I-V characteristics of CNT-FET with LASSO
J. Semicond. 2017, 38(8): 084002
doi: 10.1088/1674-4926/38/8/084002
Resistive switching characteristic of electrolyte-oxide-semiconductor structures
J. Semicond. 2017, 38(8): 084003
doi: 10.1088/1674-4926/38/8/084003
J. Semicond. 2017, 38(8): 084004
doi: 10.1088/1674-4926/38/8/084004
J. Semicond. 2017, 38(8): 084005
doi: 10.1088/1674-4926/38/8/084005
Theoretical simulation of performances in CIGS thin-film solar cells with cadmium-free buffer layer
J. Semicond. 2017, 38(8): 084006
doi: 10.1088/1674-4926/38/8/084006
J. Semicond. 2017, 38(8): 085001
doi: 10.1088/1674-4926/38/8/085001
A high-speed power detector MMIC for E-band communication
J. Semicond. 2017, 38(8): 085002
doi: 10.1088/1674-4926/38/8/085002
A 500-600 MHz GaN power amplifier with RC-LC stability network
J. Semicond. 2017, 38(8): 085003
doi: 10.1088/1674-4926/38/8/085003
J. Semicond. 2017, 38(8): 085004
doi: 10.1088/1674-4926/38/8/085004
An 8 bit 1 MS/s SAR ADC with 7.72-ENOB
J. Semicond. 2017, 38(8): 085005
doi: 10.1088/1674-4926/38/8/085005
A high sensitive 66 dB linear dynamic range receiver for 3-D laser radar
J. Semicond. 2017, 38(8): 085006
doi: 10.1088/1674-4926/38/8/085006
J. Semicond. 2017, 38(8): 085007
doi: 10.1088/1674-4926/38/8/085007
A 4 Gbps current-mode transmitter for 12-bit 250 MSPS ADC
J. Semicond. 2017, 38(8): 085008
doi: 10.1088/1674-4926/38/8/085008
Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell
J. Semicond. 2017, 38(8): 085009
doi: 10.1088/1674-4926/38/8/085009