InP-based monolithically integrated few-mode devices
J. Semicond. 2018, 39(10): 101001
doi: 10.1088/1674-4926/39/10/101001
Synthesis and characterization of poly (2,5-diyl pyrrole-2-pyrrolyl methine) semiconductor copolymer
J. Semicond. 2018, 39(10): 102001
doi: 10.1088/1674-4926/39/10/102001
J. Semicond. 2018, 39(10): 104001
doi: 10.1088/1674-4926/39/10/104001
Research progress and challenges of two dimensional MoS2 field effect transistors
J. Semicond. 2018, 39(10): 104002
doi: 10.1088/1674-4926/39/10/104002
J. Semicond. 2018, 39(10): 104003
doi: 10.1088/1674-4926/39/10/104003
J. Semicond. 2018, 39(10): 104004
doi: 10.1088/1674-4926/39/10/104004
FEM thermal analysis of high power GaN-on-diamond HEMTs
J. Semicond. 2018, 39(10): 104005
doi: 10.1088/1674-4926/39/10/104005
Ultralow specific ON-resistance high-k LDMOS with vertical field plate
J. Semicond. 2018, 39(10): 104006
doi: 10.1088/1674-4926/39/10/104006
High order DBR GaSb based single longitude mode diode lasers at 2 μm wavelength
J. Semicond. 2018, 39(10): 104007
doi: 10.1088/1674-4926/39/10/104007
Reliability testing of a 3D encapsulated VHF MEMS resonator
J. Semicond. 2018, 39(10): 104008
doi: 10.1088/1674-4926/39/10/104008
J. Semicond. 2018, 39(10): 105001
doi: 10.1088/1674-4926/39/10/105001
A 0.9 V PSRR improved voltage reference using a wide-band cascaded current mode differentiator
J. Semicond. 2018, 39(10): 105002
doi: 10.1088/1674-4926/39/10/105002
A high-efficiency charge pump in BCD process for implantable medical devices
J. Semicond. 2018, 39(10): 105003
doi: 10.1088/1674-4926/39/10/105003