Archive

Volume 39, Issue 10, Oct 2018

• INVITED REVIEW PAPERS

  InP-based monolithically integrated few-mode devices

  Dan Lu, Yiming He, Zhaosong Li, Lingjuan Zhao, Wei Wang

  J. Semicond.  2018, 39(10): 101001
  doi: 10.1088/1674-4926/39/10/101001

• SEMICONDUCTOR PHYSICS

  Synthesis and characterization of poly (2,5-diyl pyrrole-2-pyrrolyl methine) semiconductor copolymer

  Hammou Gherras, Ahmed Yahiaoui, Aicha Hachemaoui, Abdelkader Belfedal, Abdelkader Dehbi, Abdel-Hamid I. Mourad

  J. Semicond.  2018, 39(10): 102001
  doi: 10.1088/1674-4926/39/10/102001

• SEMICONDUCTOR DEVICES

  Impact of varying carbon concentration in SiC S/D asymmetric dual-k spacer for high performance and reliable FinFET

  Maisagalla Gopal, Atul Awadhiya, Nandakishor Yadav, S. K. Vishvakarma, Vaibhav Neema

  J. Semicond.  2018, 39(10): 104001
  doi: 10.1088/1674-4926/39/10/104001

  Research progress and challenges of two dimensional MoS₂ field effect transistors

  N Divya Bharathi, K Sivasankaran

  J. Semicond.  2018, 39(10): 104002
  doi: 10.1088/1674-4926/39/10/104002

  Modeling of tunneling current density of GeC based double barrier multiple quantum well resonant tunneling diode

  Swagata Dey, Vedatrayee Chakraborty, Bratati Mukhopadhyay, Gopa Sen

  J. Semicond.  2018, 39(10): 104003
  doi: 10.1088/1674-4926/39/10/104003

  Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric

  Huifang Xu

  J. Semicond.  2018, 39(10): 104004
  doi: 10.1088/1674-4926/39/10/104004

  FEM thermal analysis of high power GaN-on-diamond HEMTs

  Xudong Chen, Wenbo Zhai, Jingwen Zhang, Renan Bu, Hongxing Wang, Xun Hou

  J. Semicond.  2018, 39(10): 104005
  doi: 10.1088/1674-4926/39/10/104005

  Ultralow specific ON-resistance high-k LDMOS with vertical field plate

  Lijuan Wu, Limin Hu, Lin Zhu, Hang Yang, Bing Lei, Haiqing Xie

  J. Semicond.  2018, 39(10): 104006
  doi: 10.1088/1674-4926/39/10/104006

  High order DBR GaSb based single longitude mode diode lasers at 2 μm wavelength

  Hao Luo, Cheng’ao Yang, Shengwen Xie, Xiaoli Chai, Shushan Huang, Yu Zhang, Yingqiang Xu, Zhichuan Niu

  J. Semicond.  2018, 39(10): 104007
  doi: 10.1088/1674-4926/39/10/104007

  Reliability testing of a 3D encapsulated VHF MEMS resonator

  Fengxiang Wang, Quan Yuan, Xiao Kan, Jicong Zhao, Zeji Chen, Jinling Yang, Fuhua Yang

  J. Semicond.  2018, 39(10): 104008
  doi: 10.1088/1674-4926/39/10/104008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  High-performance pulse-width modulation AC/DC controller using novel under voltage lockout circuit according to Energy Star VI standard

  Min Qi, Quan Sun, Donghai Qiao

  J. Semicond.  2018, 39(10): 105001
  doi: 10.1088/1674-4926/39/10/105001

  A 0.9 V PSRR improved voltage reference using a wide-band cascaded current mode differentiator

  Fanyang Li

  J. Semicond.  2018, 39(10): 105002
  doi: 10.1088/1674-4926/39/10/105002

  A high-efficiency charge pump in BCD process for implantable medical devices

  Jie Zhang, Hong Zhang, Ruizhi Zhang

  J. Semicond.  2018, 39(10): 105003
  doi: 10.1088/1674-4926/39/10/105003

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