J. Semicond. 2018, 39(11): 111001
doi: 10.1088/1674-4926/39/11/111001
Spin-dependent tunneling of light and heavy holes with electric and magnetic fields
J. Semicond. 2018, 39(11): 112001
doi: 10.1088/1674-4926/39/11/112001
Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer
J. Semicond. 2018, 39(11): 113001
doi: 10.1088/1674-4926/39/11/113001
Implementation of slow and smooth etching of GaN by inductively coupled plasma
J. Semicond. 2018, 39(11): 113002
doi: 10.1088/1674-4926/39/11/113002
Impact of design and process variation on the fabrication of SiC diodes
J. Semicond. 2018, 39(11): 114001
doi: 10.1088/1674-4926/39/11/114001
Modulation of drain current as a function of energies substrate for InP HEMT devices
J. Semicond. 2018, 39(11): 114002
doi: 10.1088/1674-4926/39/11/114002
InAs-based interband cascade lasers at 4.0 μm operating at room temperature
J. Semicond. 2018, 39(11): 114003
doi: 10.1088/1674-4926/39/11/114003
The developing condition analysis of semiconductor laser frequency stabilization technology
J. Semicond. 2018, 39(11): 114004
doi: 10.1088/1674-4926/39/11/114004
Performance improvement of light-emitting diodes with double superlattices confinement layer
J. Semicond. 2018, 39(11): 114005
doi: 10.1088/1674-4926/39/11/114005
Impact of damping on high speed 850 nm VCSEL performance
J. Semicond. 2018, 39(11): 114006
doi: 10.1088/1674-4926/39/11/114006
Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation
J. Semicond. 2018, 39(11): 114007
doi: 10.1088/1674-4926/39/11/114007
Memory characteristics of microcavity dielectric barrier discharge
J. Semicond. 2018, 39(11): 114008
doi: 10.1088/1674-4926/39/11/114008
Berger code based concurrent online self-testing of embedded processors
J. Semicond. 2018, 39(11): 115001
doi: 10.1088/1674-4926/39/11/115001
A sample and hold circuit for pipelined ADC
J. Semicond. 2018, 39(11): 115002
doi: 10.1088/1674-4926/39/11/115002
4-port digital isolator based on on-chip transformer
J. Semicond. 2018, 39(11): 115003
doi: 10.1088/1674-4926/39/11/115003