Archive

Volume 39, Issue 11, Nov 2018

• INVITED PAPERS

  Studies of Water VI. One-Band, Two-Band and Three-Band, Trappy, Protonic, Semiconductor Lattice Models for Pure Liquid Water

  Binbin Jie, Tianhui Jie, Chihtang Sah

  J. Semicond.  2018, 39(11): 111001
  doi: 10.1088/1674-4926/39/11/111001

• SEMICONDUCTOR PHYSICS

  Spin-dependent tunneling of light and heavy holes with electric and magnetic fields

  L. Bruno Chandrasekar, M. Karunakaran, K. Gnanasekar

  J. Semicond.  2018, 39(11): 112001
  doi: 10.1088/1674-4926/39/11/112001

• SEMICONDUCTOR MATERIALS

  Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

  Shaoming Lin, Shaoying Ke, Yujie Ye, Donglin Huang, Jinyong Wu, Songyan Chen, Cheng Li, Jianyuan Wang, Wei Huang

  J. Semicond.  2018, 39(11): 113001
  doi: 10.1088/1674-4926/39/11/113001

  Implementation of slow and smooth etching of GaN by inductively coupled plasma

  Xilin Li, Ping Ma, Xiaoli Ji, Tongbo Wei, Xiaoyu Tan, Junxi Wang, Jinmin Li

  J. Semicond.  2018, 39(11): 113002
  doi: 10.1088/1674-4926/39/11/113002

• SEMICONDUCTOR DEVICES

  Impact of design and process variation on the fabrication of SiC diodes

  Y. K. Sharma, Huaping Jiang, Changwei Zheng, Xiaoping Dai, Yangang Wang, I. Deviny

  J. Semicond.  2018, 39(11): 114001
  doi: 10.1088/1674-4926/39/11/114001

  Modulation of drain current as a function of energies substrate for InP HEMT devices

  S. Derrouiche, B. Bouazza, C. Sayah

  J. Semicond.  2018, 39(11): 114002
  doi: 10.1088/1674-4926/39/11/114002

  InAs-based interband cascade lasers at 4.0 μm operating at room temperature

  Tian Yu, Shuman Liu, Jinchuan Zhang, Bo Xu, Lijun Wang, Junqi Liu, Ning Zhuo, Shenqiang Zhai, Xiaoling Ye, Yonghai Chen, Fengqi Liu, Zhanguo Wang

  J. Semicond.  2018, 39(11): 114003
  doi: 10.1088/1674-4926/39/11/114003

  The developing condition analysis of semiconductor laser frequency stabilization technology

  Yijun Yao, Canwen Zou, Haiyang Yu, Jinjin Guo, Yaming Li, Jianguo Liu

  J. Semicond.  2018, 39(11): 114004
  doi: 10.1088/1674-4926/39/11/114004

  Performance improvement of light-emitting diodes with double superlattices confinement layer

  Cheng Cheng, Yan Lei, Zhiqiang Liu, Miao He, Zhi Li, Xiaoyan Yi, Junxi Wang, Jinmin Li, Deping Xiong

  J. Semicond.  2018, 39(11): 114005
  doi: 10.1088/1674-4926/39/11/114005

  Impact of damping on high speed 850 nm VCSEL performance

  Shuai Hu, Xiaoying He, Yan He, Jiale Su, Chong Li, Anqi Hu, Xia Guo

  J. Semicond.  2018, 39(11): 114006
  doi: 10.1088/1674-4926/39/11/114006

  Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation

  Panpan Tang, Ying Wang, Xiongfei Meng, Sufen Cui

  J. Semicond.  2018, 39(11): 114007
  doi: 10.1088/1674-4926/39/11/114007

  Memory characteristics of microcavity dielectric barrier discharge

  Yanzhou Sun, Xiaoqian Liu, Dati Su, Huibin Yang

  J. Semicond.  2018, 39(11): 114008
  doi: 10.1088/1674-4926/39/11/114008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Berger code based concurrent online self-testing of embedded processors

  G. Prasad Acharya, M. Asha Rani

  J. Semicond.  2018, 39(11): 115001
  doi: 10.1088/1674-4926/39/11/115001

  A sample and hold circuit for pipelined ADC

  Yutong Zhang, Bei Chen, Heping Ma

  J. Semicond.  2018, 39(11): 115002
  doi: 10.1088/1674-4926/39/11/115002

  4-port digital isolator based on on-chip transformer

  Feng Zhang, Ting Zhao, Chunyu Ma, Dongfang Pan

  J. Semicond.  2018, 39(11): 115003
  doi: 10.1088/1674-4926/39/11/115003

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