Archive

Volume 39, Issue 12, Dec 2018

• SEMICONDUCTOR PHYSICS

  Structural and thermoelectric properties of copper sulphide powders

  A. Narjis, A. Outzourhit, A. Aberkouks, M. El Hasnaoui, L. Nkhaili

  J. Semicond.  2018, 39(12): 122001
  doi: 10.1088/1674-4926/39/12/122001

  Optical absorption via intersubband transition of electrons in GaAs/Al_xGa_1−xAs multi-quantum wells in an electric field

  Wenqi Zhang, Zhiping Wang, Shiliang Ban

  J. Semicond.  2018, 39(12): 122002
  doi: 10.1088/1674-4926/39/12/122002

  Influence of precursor solution concentration on the structural, optical and humidity sensing properties of spray-deposited TiO₂ thin films

  Dipak L Gapale, Sandeep A Arote, Balasaheb M Palve, Ratan Y Borse

  J. Semicond.  2018, 39(12): 122003
  doi: 10.1088/1674-4926/39/12/122003

  Boron-rich layer removal and surface passivation of boron-doped p–n silicon solar cells

  Caixia Hou, Rui Jia, Ke Tao, Shuai Jiang, Pengfei Zhang, Hengchao Sun, Sanjie Liu, Mingzeng Peng, Xinhe Zheng

  J. Semicond.  2018, 39(12): 122004
  doi: 10.1088/1674-4926/39/12/122004

  Hydrodynamic simulations of terahertz oscillation in double-layer graphene

  Wei Feng

  J. Semicond.  2018, 39(12): 122005
  doi: 10.1088/1674-4926/39/12/122005

• SEMICONDUCTOR MATERIALS

  Effect of RF power on the structural and optical properties of ZnS thin films prepared by RF-sputtering

  C. M. Samba Vall, M. Chaik, H. Ait Dads, H. El Aakib, M. Elyaagoubi, M. Aggour, A. Outzourhit

  J. Semicond.  2018, 39(12): 123001
  doi: 10.1088/1674-4926/39/12/123001

  Visible light photocatalytic dye decomposition behaviour of solid state reaction grown Zn₂TiO₄ nanoparticles

  Lizina Khatua, Rajashree Sahoo, Pravakar Satapathy, Rudrashish Panda, Susanta Kumar Das

  J. Semicond.  2018, 39(12): 123002
  doi: 10.1088/1674-4926/39/12/123002

  High infrared transmittance CdS single crystal grown by physical vapor transport

  Xiaoqing Huo, Huaqing Si, Kun Zhao, Yingwu Zhang, Hongjuan Cheng, Yongkuan Xu

  J. Semicond.  2018, 39(12): 123003
  doi: 10.1088/1674-4926/39/12/123003

  The effect of oxygen on the epitaxial growth of diamond

  Meng Gong, Yanan Chen, Wancheng Yu, Peng Jin, Zhanguo Wang, Zhimin Wang, Shenjin Zhang, Feng Yang, Fengfeng Zhang, Qinjun Peng, Zuyan Xu

  J. Semicond.  2018, 39(12): 123004
  doi: 10.1088/1674-4926/39/12/123004

  Effect of substrate temperature on the physical properties of SnS₂:Cu thin films deposited by spray pyrolysis

  M. R. Fadavieslam

  J. Semicond.  2018, 39(12): 123005
  doi: 10.1088/1674-4926/39/12/123005

  Structural and dielectric properties of prepared PbS and PbTe nanomaterials

  A. A. Azab, Azza A. Ward, G. M. Mahmoud, Eman M. El-Hanafy, H. El-Zahed, F. S. Terra

  J. Semicond.  2018, 39(12): 123006
  doi: 10.1088/1674-4926/39/12/123006

• SEMICONDUCTOR DEVICES

  Electrical contacts to two-dimensional transition-metal dichalcogenides

  Shuxian Wang, Zhihao Yu, Xinran Wang

  J. Semicond.  2018, 39(12): 124001
  doi: 10.1088/1674-4926/39/12/124001

  Analysis and performance exploration of high performance (HfO₂) SOI FinFETs over the conventional (Si₃N₄) SOI FinFET towards analog/RF design

  Neeraj Jain, Balwinder Raj

  J. Semicond.  2018, 39(12): 124002
  doi: 10.1088/1674-4926/39/12/124002

  Static performance model of GaN MESFET based on the interface state

  Xiaohong Li, Ruirong Wang, Tong Chen

  J. Semicond.  2018, 39(12): 124003
  doi: 10.1088/1674-4926/39/12/124003

  Simulation study of a 4H-SiC lateral BJT for monolithic power integration

  Shiwei Liang, Jun Wang, Fang Fang, Linfeng Deng

  J. Semicond.  2018, 39(12): 124004
  doi: 10.1088/1674-4926/39/12/124004

  Influence of well doping on the performance of UTBB MOSFETs

  Yuqi Ren, Shizhen Huang, Lei Shen, Xiaoyan Liu, Gang Du

  J. Semicond.  2018, 39(12): 124005
  doi: 10.1088/1674-4926/39/12/124005

  Effect of phosphor sedimentation on photochromic properties of a warm white light-emitting diode

  Yunyi Zhuang, Yong Wang, Liping Wang, Zhanguo Li, Wenbo Li, Lei Yang, Jun Zou

  J. Semicond.  2018, 39(12): 124006
  doi: 10.1088/1674-4926/39/12/124006

  The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors

  Jiaming Luo, Min Guan, Yang Zhang, Liqiang Chen, Yiping Zeng

  J. Semicond.  2018, 39(12): 124007
  doi: 10.1088/1674-4926/39/12/124007

  Design of a C-band polarization rotator-splitter based on a mode-evolution structure and an asymmetric directional coupler

  Chen Yuan, Jincheng Dai, Hao Jia, Jianfeng Ding, Lei Zhang, Xin Fu, Lin Yang

  J. Semicond.  2018, 39(12): 124008
  doi: 10.1088/1674-4926/39/12/124008

  Analysis and parameter extraction of memristive structures based on Strukov’s non-linear model

  A. Avila Garcia, L. Ortega Reyes

  J. Semicond.  2018, 39(12): 124009
  doi: 10.1088/1674-4926/39/12/124009

  Fabrication, electrical and photovoltaic characteristics of CuInGeSe₄/n-Si diode

  I. M. El Radaf, A. M. Mansour, G. B. Sakr

  J. Semicond.  2018, 39(12): 124010
  doi: 10.1088/1674-4926/39/12/124010

  Impact of strained silicon on the device performance of a bipolar charge plasma transistor

  Sangeeta Singh

  J. Semicond.  2018, 39(12): 124011
  doi: 10.1088/1674-4926/39/12/124011

  Nonlinear dynamics in a terahertz-driven double-layer graphene diode

  Wei Feng, Lijuan Shi

  J. Semicond.  2018, 39(12): 124012
  doi: 10.1088/1674-4926/39/12/124012

  Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer

  Chao Xiong, Jin Xiao, Lei Chen, Wenhan Du, Weilong Xu, Dongdong Hou

  J. Semicond.  2018, 39(12): 124013
  doi: 10.1088/1674-4926/39/12/124013

  Experimental research on the relationship between bypass diode configuration of photovoltaic module and hot spot generation

  Cong Gao, Peng Liang, Huixue Ren, Peide Han

  J. Semicond.  2018, 39(12): 124014
  doi: 10.1088/1674-4926/39/12/124014

  Model of NBTI combined with mobility degradation

  Xuezhong Wu, Chenyue Ma, Shucheng Gao, Xiangbin Li, Fu Sun, Lining Zhang, Xinnan Lin

  J. Semicond.  2018, 39(12): 124015
  doi: 10.1088/1674-4926/39/12/124015

  3D modelling based comprehensive analysis of high-κ gate stack graded channel dual material trigate MOSFET

  Aadil T. Shora, Farooq A. Khanday

  J. Semicond.  2018, 39(12): 124016
  doi: 10.1088/1674-4926/39/12/124016

  Experimental comparison of SiC GTO and ETO for pulse power applications

  Cheng Zeng, Linfeng Deng, Zongjian Li, Jun Wang

  J. Semicond.  2018, 39(12): 124017
  doi: 10.1088/1674-4926/39/12/124017

• SEMICONDUCTOR INTEGRATED CIRCUITS

  245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application

  Yanfei Mao, Shiju E, Klaus Schmalz, J. Christoph Scheytt

  J. Semicond.  2018, 39(12): 125001
  doi: 10.1088/1674-4926/39/12/125001

  A fast-locking bang-bang phase-locked loop with adaptive loop gain controller

  Jincheng Yang, Zhao Zhang, Nan Qi, Liyuan Liu, Jian Liu, Nanjian Wu

  J. Semicond.  2018, 39(12): 125002
  doi: 10.1088/1674-4926/39/12/125002

  A novel power-on-reset circuit for passive UHF RFID tag chip

  Ang Wang, Lina Yu, Dehua Wu, Shibo Fu, Wanlin Gao, Wan’ang Xiao

  J. Semicond.  2018, 39(12): 125003
  doi: 10.1088/1674-4926/39/12/125003

  A 0.6-V, 69-dB subthreshold sigma–delta modulator

  Chengying Chen, Hongyi Zhang

  J. Semicond.  2018, 39(12): 125004
  doi: 10.1088/1674-4926/39/12/125004

  On-chip bias circuit for W-band silicon–germanium power amplifier

  Shuo Yang, Lijun Zhang, Jun Fu, Xiaobin Zhang

  J. Semicond.  2018, 39(12): 125005
  doi: 10.1088/1674-4926/39/12/125005

  A congestion-aware OE router employing fair arbitration for network-on-chip

  Lu Liu, Yadong Sun, Zhangming Zhu, Yintang Yang

  J. Semicond.  2018, 39(12): 125006
  doi: 10.1088/1674-4926/39/12/125006

  Design of a 3D Wilkinson power divider using through glass via technology

  Jifei Sang, Libo Qian, Yinshui Xia, Huakang Xia

  J. Semicond.  2018, 39(12): 125007
  doi: 10.1088/1674-4926/39/12/125007

  An 8–18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS

  Jie Gong, Wei Li, Jintao Hu, Jiao Ye, Tao Wang

  J. Semicond.  2018, 39(12): 125008
  doi: 10.1088/1674-4926/39/12/125008

• SEMICONDUCTOR TECHNOLOGY

  Wet nitrogen oxidation technology and its anisotropy influence on VCSELs

  Yan He, Xiaoying He, Shuai Hu, Jiale Su, Chong Li, Anqi Hu, Xia Guo

  J. Semicond.  2018, 39(12): 126001
  doi: 10.1088/1674-4926/39/12/126001

  Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning

  Liu Yang, Baimei Tan, Yuling Liu, Baohong Gao, Chunyu Han

  J. Semicond.  2018, 39(12): 126002
  doi: 10.1088/1674-4926/39/12/126002

  Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning

  Liu Yang, Baimei Tan, Yuling Liu, Baohong Gao, Yilin Liu, Chunyu Han, Qi Wang, Siyu Tian

  J. Semicond.  2018, 39(12): 126003
  doi: 10.1088/1674-4926/39/12/126003

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