Structural and thermoelectric properties of copper sulphide powders
J. Semicond. 2018, 39(12): 122001
doi: 10.1088/1674-4926/39/12/122001
J. Semicond. 2018, 39(12): 122002
doi: 10.1088/1674-4926/39/12/122002
J. Semicond. 2018, 39(12): 122003
doi: 10.1088/1674-4926/39/12/122003
Boron-rich layer removal and surface passivation of boron-doped p–n silicon solar cells
J. Semicond. 2018, 39(12): 122004
doi: 10.1088/1674-4926/39/12/122004
Hydrodynamic simulations of terahertz oscillation in double-layer graphene
J. Semicond. 2018, 39(12): 122005
doi: 10.1088/1674-4926/39/12/122005
J. Semicond. 2018, 39(12): 123001
doi: 10.1088/1674-4926/39/12/123001
J. Semicond. 2018, 39(12): 123002
doi: 10.1088/1674-4926/39/12/123002
High infrared transmittance CdS single crystal grown by physical vapor transport
J. Semicond. 2018, 39(12): 123003
doi: 10.1088/1674-4926/39/12/123003
The effect of oxygen on the epitaxial growth of diamond
J. Semicond. 2018, 39(12): 123004
doi: 10.1088/1674-4926/39/12/123004
J. Semicond. 2018, 39(12): 123005
doi: 10.1088/1674-4926/39/12/123005
Structural and dielectric properties of prepared PbS and PbTe nanomaterials
J. Semicond. 2018, 39(12): 123006
doi: 10.1088/1674-4926/39/12/123006
Electrical contacts to two-dimensional transition-metal dichalcogenides
J. Semicond. 2018, 39(12): 124001
doi: 10.1088/1674-4926/39/12/124001
J. Semicond. 2018, 39(12): 124002
doi: 10.1088/1674-4926/39/12/124002
Static performance model of GaN MESFET based on the interface state
J. Semicond. 2018, 39(12): 124003
doi: 10.1088/1674-4926/39/12/124003
Simulation study of a 4H-SiC lateral BJT for monolithic power integration
J. Semicond. 2018, 39(12): 124004
doi: 10.1088/1674-4926/39/12/124004
Influence of well doping on the performance of UTBB MOSFETs
J. Semicond. 2018, 39(12): 124005
doi: 10.1088/1674-4926/39/12/124005
Effect of phosphor sedimentation on photochromic properties of a warm white light-emitting diode
J. Semicond. 2018, 39(12): 124006
doi: 10.1088/1674-4926/39/12/124006
The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors
J. Semicond. 2018, 39(12): 124007
doi: 10.1088/1674-4926/39/12/124007
J. Semicond. 2018, 39(12): 124008
doi: 10.1088/1674-4926/39/12/124008
Analysis and parameter extraction of memristive structures based on Strukov’s non-linear model
J. Semicond. 2018, 39(12): 124009
doi: 10.1088/1674-4926/39/12/124009
Fabrication, electrical and photovoltaic characteristics of CuInGeSe4/n-Si diode
J. Semicond. 2018, 39(12): 124010
doi: 10.1088/1674-4926/39/12/124010
Impact of strained silicon on the device performance of a bipolar charge plasma transistor
J. Semicond. 2018, 39(12): 124011
doi: 10.1088/1674-4926/39/12/124011
Nonlinear dynamics in a terahertz-driven double-layer graphene diode
J. Semicond. 2018, 39(12): 124012
doi: 10.1088/1674-4926/39/12/124012
Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer
J. Semicond. 2018, 39(12): 124013
doi: 10.1088/1674-4926/39/12/124013
J. Semicond. 2018, 39(12): 124014
doi: 10.1088/1674-4926/39/12/124014
Model of NBTI combined with mobility degradation
J. Semicond. 2018, 39(12): 124015
doi: 10.1088/1674-4926/39/12/124015
J. Semicond. 2018, 39(12): 124016
doi: 10.1088/1674-4926/39/12/124016
Experimental comparison of SiC GTO and ETO for pulse power applications
J. Semicond. 2018, 39(12): 124017
doi: 10.1088/1674-4926/39/12/124017
245 GHz subharmonic receiver with on-chip antenna for gas spectroscopy application
J. Semicond. 2018, 39(12): 125001
doi: 10.1088/1674-4926/39/12/125001
A fast-locking bang-bang phase-locked loop with adaptive loop gain controller
J. Semicond. 2018, 39(12): 125002
doi: 10.1088/1674-4926/39/12/125002
A novel power-on-reset circuit for passive UHF RFID tag chip
J. Semicond. 2018, 39(12): 125003
doi: 10.1088/1674-4926/39/12/125003
A 0.6-V, 69-dB subthreshold sigma–delta modulator
J. Semicond. 2018, 39(12): 125004
doi: 10.1088/1674-4926/39/12/125004
On-chip bias circuit for W-band silicon–germanium power amplifier
J. Semicond. 2018, 39(12): 125005
doi: 10.1088/1674-4926/39/12/125005
A congestion-aware OE router employing fair arbitration for network-on-chip
J. Semicond. 2018, 39(12): 125006
doi: 10.1088/1674-4926/39/12/125006
Design of a 3D Wilkinson power divider using through glass via technology
J. Semicond. 2018, 39(12): 125007
doi: 10.1088/1674-4926/39/12/125007
An 8–18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS
J. Semicond. 2018, 39(12): 125008
doi: 10.1088/1674-4926/39/12/125008
Wet nitrogen oxidation technology and its anisotropy influence on VCSELs
J. Semicond. 2018, 39(12): 126001
doi: 10.1088/1674-4926/39/12/126001
Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning
J. Semicond. 2018, 39(12): 126002
doi: 10.1088/1674-4926/39/12/126002
J. Semicond. 2018, 39(12): 126003
doi: 10.1088/1674-4926/39/12/126003