J. Semicond. 2018, 39(4): 042001
doi: 10.1088/1674-4926/39/4/042001
J. Semicond. 2018, 39(4): 042002
doi: 10.1088/1674-4926/39/4/042002
J. Semicond. 2018, 39(4): 043001
doi: 10.1088/1674-4926/39/4/043001
Light emission of heavily doped AlGaN structures under optical pumping
J. Semicond. 2018, 39(4): 043002
doi: 10.1088/1674-4926/39/4/043002
Design and simulation of nanoscale double-gate TFET/tunnel CNTFET
J. Semicond. 2018, 39(4): 044001
doi: 10.1088/1674-4926/39/4/044001
J. Semicond. 2018, 39(4): 044002
doi: 10.1088/1674-4926/39/4/044002
Four-junction AlGaAs/GaAs laser power converter
J. Semicond. 2018, 39(4): 044003
doi: 10.1088/1674-4926/39/4/044003
J. Semicond. 2018, 39(4): 045001
doi: 10.1088/1674-4926/39/4/045001
J. Semicond. 2018, 39(4): 045002
doi: 10.1088/1674-4926/39/4/045002
A 5 Gb/s CMOS adaptive equalizer for serial link
J. Semicond. 2018, 39(4): 045003
doi: 10.1088/1674-4926/39/4/045003
A broadband high-efficiency Doherty power amplifier using symmetrical devices
J. Semicond. 2018, 39(4): 045004
doi: 10.1088/1674-4926/39/4/045004
J. Semicond. 2018, 39(4): 046001
doi: 10.1088/1674-4926/39/4/046001