Archive

Volume 40, Issue 5, May 2019

• RESEARCH HIGHLIGHTS

  Scalable fabrication of geometry-tunable self-aligned superlattice photonic crystals for spectrum-programmable light trapping

  Zhijie Wang

  J. Semicond.  2019, 40(5): 050201
  doi: 10.1088/1674-4926/40/5/050201

  Energy-efficient reconfigurable AI processor

  Nanjian Wu

  J. Semicond.  2019, 40(5): 050202
  doi: 10.1088/1674-4926/40/5/050202

  A theoretical explanation of the decays of Majorana oscillations

  Dong Pan

  J. Semicond.  2019, 40(5): 050203
  doi: 10.1088/1674-4926/40/5/050203

  Artificial neuron and synapse in spintronics devices

  Dahai Wei

  J. Semicond.  2019, 40(5): 050204
  doi: 10.1088/1674-4926/40/5/050204

  Large-capacity and low-loss integrated optical buffer

  Jianping Yao

  J. Semicond.  2019, 40(5): 050205
  doi: 10.1088/1674-4926/40/5/050205

• COMMENTS AND OPINIONS

  Precision photonic integration for future large-scale photonic integrated circuits

  Xiangfei Chen

  J. Semicond.  2019, 40(5): 050301
  doi: 10.1088/1674-4926/40/5/050301

• NEWS AND VIEWS

  Colloidal quantum dot lasers and hybrid integrations

  Jianjun Chen

  J. Semicond.  2019, 40(5): 050401
  doi: 10.1088/1674-4926/40/5/050401

  Semiconductor-based terahertz frequency combs

  Hua Li

  J. Semicond.  2019, 40(5): 050402
  doi: 10.1088/1674-4926/40/5/050402

  Opto-electro-thermal simulation technology of solar cells

  Yidan An, Yue Zhao, Tianshu Ma, Xiaofeng Li

  J. Semicond.  2019, 40(5): 050403
  doi: 10.1088/1674-4926/40/5/050403

• ARTICLES

  Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application

  P Mallika Bramaramba Devi, G. Phaneendra Reddy, K. T. Ramakrishna Reddy

  J. Semicond.  2019, 40(5): 052101
  doi: 10.1088/1674-4926/40/5/052101

  Photoluminescence properties of ultrathin CsPbCl₃ nanowires on mica substrate

  Yan Gao, Liyun Zhao, Qiuyu Shang, Chun Li, Zhen Liu, Qi Li, Xina Wang, Qing Zhang

  J. Semicond.  2019, 40(5): 052201
  doi: 10.1088/1674-4926/40/5/052201

  Multi-channel 28-GHz millimeter-wave signal generation on a silicon photonic chip with automated polarization control

  Ruiyuan Cao, Yu He, Qingming Zhu, Jingchi Li, Shaohua An, Yong Zhang, Yikai Su

  J. Semicond.  2019, 40(5): 052301
  doi: 10.1088/1674-4926/40/5/052301

  Research for radiation-hardened high-voltage SOI LDMOS

  Yanfei Li, Shaoli Zhu, Jianwei Wu, Genshen Hong, Zheng Xu

  J. Semicond.  2019, 40(5): 052401
  doi: 10.1088/1674-4926/40/5/052401

  Design and analysis of a NMOS triggered LIGBT structure for electrostatic discharge protection

  Li Tian, Jianbing Cheng, Cairong Zhang, Li Shen, Lei Wang

  J. Semicond.  2019, 40(5): 052402
  doi: 10.1088/1674-4926/40/5/052402

  Magneto-transport properties of the off-stoichiometric Co₂MnAl film epitaxially grown on GaAs (001)

  Zhifeng Yu, Hailong Wang, Jialin Ma, Shucheng Tong, Jianhua Zhao

  J. Semicond.  2019, 40(5): 052501
  doi: 10.1088/1674-4926/40/5/052501

  Realizing super-long Cu₂O nanowires arrays for high-efficient water splitting applications with a convenient approach

  Nasori Nasori, Tianyi Dai, Xiaohao Jia, Agus Rubiyanto, Dawei Cao, Shengchun Qu, Zhanguo Wang, Zhijie Wang, Yong Lei

  J. Semicond.  2019, 40(5): 052701
  doi: 10.1088/1674-4926/40/5/052701

  Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs

  Chen Xu, Changda Zheng, Xiaoming Wu, Shuan Pan, Xingan Jiang, Junlin Liu, Fengyi Jiang

  J. Semicond.  2019, 40(5): 052801
  doi: 10.1088/1674-4926/40/5/052801

  Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes

  Yipeng Liang, Jianping Liu, Masao Ikeda, Aiqin Tian, Renlin Zhou, Shuming Zhang, Tong Liu, Deyao Li, Liqun Zhang, Hui Yang

  J. Semicond.  2019, 40(5): 052802
  doi: 10.1088/1674-4926/40/5/052802

  A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge

  Xiaorong Luo, Tian Liao, Jie Wei, Jian Fang, Fei Yang, Bo Zhang

  J. Semicond.  2019, 40(5): 052803
  doi: 10.1088/1674-4926/40/5/052803

  A novel design approach of charge plasma tunnel FET for radio frequency applications

  Shivendra Yadav, Alish Pamnani, Dheeraj Sharma, Anju Gedam, Atul Kumar, Neeraj Sharma

  J. Semicond.  2019, 40(5): 052901
  doi: 10.1088/1674-4926/40/5/052901

Journal of Semiconductors © 2017 All Rights Reserved