J. Semicond. 2019, 40(5): 050201
doi: 10.1088/1674-4926/40/5/050201
Energy-efficient reconfigurable AI processor
J. Semicond. 2019, 40(5): 050202
doi: 10.1088/1674-4926/40/5/050202
A theoretical explanation of the decays of Majorana oscillations
J. Semicond. 2019, 40(5): 050203
doi: 10.1088/1674-4926/40/5/050203
Artificial neuron and synapse in spintronics devices
J. Semicond. 2019, 40(5): 050204
doi: 10.1088/1674-4926/40/5/050204
Large-capacity and low-loss integrated optical buffer
J. Semicond. 2019, 40(5): 050205
doi: 10.1088/1674-4926/40/5/050205
Precision photonic integration for future large-scale photonic integrated circuits
J. Semicond. 2019, 40(5): 050301
doi: 10.1088/1674-4926/40/5/050301
Colloidal quantum dot lasers and hybrid integrations
J. Semicond. 2019, 40(5): 050401
doi: 10.1088/1674-4926/40/5/050401
Semiconductor-based terahertz frequency combs
J. Semicond. 2019, 40(5): 050402
doi: 10.1088/1674-4926/40/5/050402
Opto-electro-thermal simulation technology of solar cells
J. Semicond. 2019, 40(5): 050403
doi: 10.1088/1674-4926/40/5/050403
J. Semicond. 2019, 40(5): 052101
doi: 10.1088/1674-4926/40/5/052101
Photoluminescence properties of ultrathin CsPbCl3 nanowires on mica substrate
J. Semicond. 2019, 40(5): 052201
doi: 10.1088/1674-4926/40/5/052201
J. Semicond. 2019, 40(5): 052301
doi: 10.1088/1674-4926/40/5/052301
Research for radiation-hardened high-voltage SOI LDMOS
J. Semicond. 2019, 40(5): 052401
doi: 10.1088/1674-4926/40/5/052401
Design and analysis of a NMOS triggered LIGBT structure for electrostatic discharge protection
J. Semicond. 2019, 40(5): 052402
doi: 10.1088/1674-4926/40/5/052402
Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxially grown on GaAs (001)
J. Semicond. 2019, 40(5): 052501
doi: 10.1088/1674-4926/40/5/052501
J. Semicond. 2019, 40(5): 052701
doi: 10.1088/1674-4926/40/5/052701
Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs
J. Semicond. 2019, 40(5): 052801
doi: 10.1088/1674-4926/40/5/052801
Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes
J. Semicond. 2019, 40(5): 052802
doi: 10.1088/1674-4926/40/5/052802
A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge
J. Semicond. 2019, 40(5): 052803
doi: 10.1088/1674-4926/40/5/052803
A novel design approach of charge plasma tunnel FET for radio frequency applications
J. Semicond. 2019, 40(5): 052901
doi: 10.1088/1674-4926/40/5/052901