Archive

Volume 40, Issue 6, Jun 2019

• Special Issue on 2D-Materials-Related Physical Properties and Optoelectronic Devices

• RESEARCH HIGHLIGHTS

  2D metamaterials coherently steer nonlinear valley photons of 2D semiconductor

  Chuanbo Li, Ming Li

  J. Semicond.  2019, 40(6): 060201
  doi: 10.1088/1674-4926/40/6/060201

  Unique interfacial thermodynamics of few-layer 2D MoS

  Zhijie Wang

  J. Semicond.  2019, 40(6): 060202
  doi: 10.1088/1674-4926/40/6/060202

  Topological photodetection

  Zhongming Wei

  J. Semicond.  2019, 40(6): 060203
  doi: 10.1088/1674-4926/40/6/060203

• NEWS AND VIEWS

  Heteroepitaxy of semiconductor thin films

  Yi Gu

  J. Semicond.  2019, 40(6): 060401
  doi: 10.1088/1674-4926/40/6/060401

  Room-temperature stable two-dimensional ferroelectric materials

  Lun Dai

  J. Semicond.  2019, 40(6): 060402
  doi: 10.1088/1674-4926/40/6/060402

• EDITORIAL

  Preface to the Special Issue on 2D-Materials-Related Physical Properties and Optoelectronic Devices

  Ping-Heng Tan, Lijun Zhang, Lun Dai, Shuyun Zhou

  J. Semicond.  2019, 40(6): 060101
  doi: 10.1088/1674-4926/40/6/060101

• REVIEWS

  Optical and electrical properties of two-dimensional anisotropic materials

  Ziqi Zhou, Yu Cui, Ping-Heng Tan, Xuelu Liu, Zhongming Wei

  J. Semicond.  2019, 40(6): 061001
  doi: 10.1088/1674-4926/40/6/061001

  Atomically thin α-In₂Se₃: an emergent two-dimensional room temperature ferroelectric semiconductor

  Yue Li, Ming Gong, Hualing Zeng

  J. Semicond.  2019, 40(6): 061002
  doi: 10.1088/1674-4926/40/6/061002

  Synthesis, properties, and applications of large-scale two-dimensional materials by polymer-assisted deposition

  Hongtao Ren, Yachao Liu, Lei Zhang, Kai Liu

  J. Semicond.  2019, 40(6): 061003
  doi: 10.1088/1674-4926/40/6/061003

• ARTICLES

  Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene

  Naili Yue, Joshua Myers, Liqin Su, Wentao Wang, Fude Liu, Raphael Tsu, Yan Zhuang, Yong Zhang

  J. Semicond.  2019, 40(6): 062001
  doi: 10.1088/1674-4926/40/6/062001

  Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrödinger's equation

  Endi Suhendi, Lilik Hasanah, Dadi Rusdiana, Fatimah A. Noor, Neny Kurniasih, Khairurrijal

  J. Semicond.  2019, 40(6): 062002
  doi: 10.1088/1674-4926/40/6/062002

  Bilayer tellurene–metal interfaces

  Hua Pang, Jiahuan Yan, Jie Yang, Shiqi Liu, Yuanyuan Pan, Xiuying Zhang, Bowen Shi, Hao Tang, Jinbo Yang, Qihang Liu, Lianqiang Xu, Yangyang Wang, Jing Lv

  J. Semicond.  2019, 40(6): 062003
  doi: 10.1088/1674-4926/40/6/062003

  Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations

  Pengxiang Bai, Shiying Guo, Shengli Zhang, Hengze Qu, Wenhan Zhou, Haibo Zeng

  J. Semicond.  2019, 40(6): 062004
  doi: 10.1088/1674-4926/40/6/062004

  Substrates and interlayer coupling effects on Mo_1−xW_xSe₂ alloys

  Fang Liang, Hejun Xu, Zuoyuan Dong, Yafeng Xie, Chen Luo, Yin Xia, Jian Zhang, Jun Wang, Xing Wu

  J. Semicond.  2019, 40(6): 062005
  doi: 10.1088/1674-4926/40/6/062005

  Broadband absorption of graphene from magnetic dipole resonances in hybrid nanostructure

  Xiaowei Jiang

  J. Semicond.  2019, 40(6): 062006
  doi: 10.1088/1674-4926/40/6/062006

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