Archive

Volume 41, Issue 12, Dec 2020

• ARTICLES

  Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots

  Dandan Ning, Yanan Chen, Xinkun Li, Dechun Liang, Shufang Ma, Peng Jin, Zhanguo Wang

  J. Semicond.  2020, 41(12): 122101
  doi: 10.1088/1674-4926/41/12/122101

  The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET

  Baoshun Wang, Jiangwei Cui, Qi Guo, Qiwen Zheng, Ying Wei, Shanxue Xi

  J. Semicond.  2020, 41(12): 122102
  doi: 10.1088/1674-4926/41/12/122102

  The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma

  Yongkang Xu, Sannian Song, Wencheng Fang, Chengxing Li, Zhitang Song

  J. Semicond.  2020, 41(12): 122103
  doi: 10.1088/1674-4926/41/12/122103

  Small molecule donors with different conjugated π linking bridges: Synthesis and photovoltaic properties

  Xiyue Dong, Dingqin Hu, Pengyu Chen, Xuexin Dai, Chao Hu, Zeyun Xiao, Shirong Lu

  J. Semicond.  2020, 41(12): 122201
  doi: 10.1088/1674-4926/41/12/122201

  Self-powered circularly polarized light detector based on asymmetric chiral metamaterials

  Zhihua Yin, Xuemeng Hu, Jianping Zeng, Yun Zeng, Wei Peng

  J. Semicond.  2020, 41(12): 122301
  doi: 10.1088/1674-4926/41/12/122301

  A 16-bit 1 MSPS SAR ADC with foreground calibration and residual voltage shift strategy

  Xian Zhang, Xiaodong Cao, Xuelian Zhang

  J. Semicond.  2020, 41(12): 122401
  doi: 10.1088/1674-4926/41/12/122401

  Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

  Jinyong Wu, Donglin Huang, Yujie Ye, Jianyuan Wang, Wei Huang, Cheng Li, Songyan Chen, Shaoying Ke

  J. Semicond.  2020, 41(12): 122402
  doi: 10.1088/1674-4926/41/12/122402

  Design of GGNMOS ESD protection device for radiation-hardened 0.18 μm CMOS process

  Jianwei Wu, Zongguang Yu, Genshen Hong, Rubin Xie

  J. Semicond.  2020, 41(12): 122403
  doi: 10.1088/1674-4926/41/12/122403

  Prediction and observation of defect-induced room-temperature ferromagnetism in halide perovskites

  Zhiguo Sun, Bo Cai, Xi Chen, Wenxian Wei, Xiaoming Li, Dandan Yang, Cuifang Meng, Ye Wu, Haibo Zeng

  J. Semicond.  2020, 41(12): 122501
  doi: 10.1088/1674-4926/41/12/122501

  An antiferromagnetic two-dimensional material: Chromium diiodides monolayer

  Jingjing Zhang, Jin Yang, Liangzhong Lin, JiaJi Zhu

  J. Semicond.  2020, 41(12): 122502
  doi: 10.1088/1674-4926/41/12/122502

  Effects of high temperature annealing and laser irradiation on activation rate of phosphorus

  Shaojie Li, Peide Han

  J. Semicond.  2020, 41(12): 122701
  doi: 10.1088/1674-4926/41/12/122701

  Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

  Rui Zhou, Cui Yu, Chuangjie Zhou, Jianchao Guo, Zezhao He, Yanfeng Wang, Feng Qiu, Hongxing Wang, Shujun Cai, Zhihong Feng

  J. Semicond.  2020, 41(12): 122801
  doi: 10.1088/1674-4926/41/12/122801

  Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions

  Wen Gu, Zhibin Liu, Yanan Guo, Xiaodong Wang, Xiaolong Jia, Xingfang Liu, Yiping Zeng, Junxi Wang, Jinmin Li, Jianchang Yan

  J. Semicond.  2020, 41(12): 122802
  doi: 10.1088/1674-4926/41/12/122802

  RF performance evaluation of p-type NiO-pocket based β-Ga₂O₃/black phosphorous heterostructure MOSFET

  Narendra Yadava, Shivangi Mani, R. K. Chauhan

  J. Semicond.  2020, 41(12): 122803
  doi: 10.1088/1674-4926/41/12/122803

Journal of Semiconductors © 2017 All Rights Reserved