J. Semicond. 2020, 41(12): 122101
doi: 10.1088/1674-4926/41/12/122101
The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET
J. Semicond. 2020, 41(12): 122102
doi: 10.1088/1674-4926/41/12/122102
The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma
J. Semicond. 2020, 41(12): 122103
doi: 10.1088/1674-4926/41/12/122103
J. Semicond. 2020, 41(12): 122201
doi: 10.1088/1674-4926/41/12/122201
Self-powered circularly polarized light detector based on asymmetric chiral metamaterials
J. Semicond. 2020, 41(12): 122301
doi: 10.1088/1674-4926/41/12/122301
A 16-bit 1 MSPS SAR ADC with foreground calibration and residual voltage shift strategy
J. Semicond. 2020, 41(12): 122401
doi: 10.1088/1674-4926/41/12/122401
J. Semicond. 2020, 41(12): 122402
doi: 10.1088/1674-4926/41/12/122402
Design of GGNMOS ESD protection device for radiation-hardened 0.18 μm CMOS process
J. Semicond. 2020, 41(12): 122403
doi: 10.1088/1674-4926/41/12/122403
Prediction and observation of defect-induced room-temperature ferromagnetism in halide perovskites
J. Semicond. 2020, 41(12): 122501
doi: 10.1088/1674-4926/41/12/122501
An antiferromagnetic two-dimensional material: Chromium diiodides monolayer
J. Semicond. 2020, 41(12): 122502
doi: 10.1088/1674-4926/41/12/122502
Effects of high temperature annealing and laser irradiation on activation rate of phosphorus
J. Semicond. 2020, 41(12): 122701
doi: 10.1088/1674-4926/41/12/122701
Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond
J. Semicond. 2020, 41(12): 122801
doi: 10.1088/1674-4926/41/12/122801
J. Semicond. 2020, 41(12): 122802
doi: 10.1088/1674-4926/41/12/122802
J. Semicond. 2020, 41(12): 122803
doi: 10.1088/1674-4926/41/12/122803