Observation of exciton polariton condensation in a perovskite lattice at room temperature
J. Semicond. 2020, 41(3): 030201
doi: 10.1088/1674-4926/41/3/030201
Epitaxial graphene gas sensors on SiC substrate with high sensitivity
J. Semicond. 2020, 41(3): 032101
doi: 10.1088/1674-4926/41/3/032101
Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch
J. Semicond. 2020, 41(3): 032102
doi: 10.1088/1674-4926/41/3/032102
J. Semicond. 2020, 41(3): 032103
doi: 10.1088/1674-4926/41/3/032103
First-principles exploration of defect-pairs in GaN
J. Semicond. 2020, 41(3): 032104
doi: 10.1088/1674-4926/41/3/032104
High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots
J. Semicond. 2020, 41(3): 032301
doi: 10.1088/1674-4926/41/3/032301
Fabrication of flexible AlGaInP LED
J. Semicond. 2020, 41(3): 032302
doi: 10.1088/1674-4926/41/3/032302
J. Semicond. 2020, 41(3): 032303
doi: 10.1088/1674-4926/41/3/032303
J. Semicond. 2020, 41(3): 032304
doi: 10.1088/1674-4926/41/3/032304
Analysis of the time domain characteristics of tapered semiconductor lasers
J. Semicond. 2020, 41(3): 032305
doi: 10.1088/1674-4926/41/3/032305
Simulation analysis of a high efficiency GaInP/Si multijunction solar cell
J. Semicond. 2020, 41(3): 032701
doi: 10.1088/1674-4926/41/3/032701
High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W
J. Semicond. 2020, 41(3): 032901
doi: 10.1088/1674-4926/41/3/032901