Journal of Semiconductors

2019年JOS入选“中国科技期刊卓越行动计划”

2020年11月JOS被EI数据库收录

Authors
About the Journal
Editorial Board

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

Home
Just Accepted
In Press
Current Issue
All Issues
Review Articles
Special Issues
JOSarXiv

|

Issue Browser

Volume 13, Issue 9, Sep 1992

Table of Content

Select articles

CONTENTS

n型砷化镓外延层中1.48eV发射带的时间分辨光谱的研究

段家忯

Chin. J. Semicond. 1992, 13(9): 523-527

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1992, 13(9): 523.

段家忯. n型砷化镓外延层中1.48eV发射带的时间分辨光谱的研究[J]. Chin. J. Semicond., 1992, 13(9): 523..Export: BibTex EndNote

段家忯. n型砷化镓外延层中1.48eV发射带的时间分辨光谱的研究[J]. Chin. J. Semicond., 1992, 13(9): 523...

不连续类氧化层界面多晶硅发射极晶体管理论模型

魏希文, 李建军, 马平西, 邹赫麟, 王阳元, 张利春, 吉利久

Chin. J. Semicond. 1992, 13(9): 528-538

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1992, 13(9): 528.

魏希文, 李建军, 马平西, 邹赫麟, 王阳元, 张利春, 吉利久. 不连续类氧化层界面多晶硅发射极晶体管理论模型[J]. Chin. J. Semicond., 1992, 13(9): 528..Export: BibTex EndNote

魏希文, 李建军, 马平西, 邹赫麟, 王阳元, 张利春, 吉利久. 不连续类氧化层界面多晶硅发射极晶体管理论模型[J]. Chin. J. Semicond., 1992, 13(9): 528...

半导体激光器功率输出特性的理论分析及实验研究

刘德明, 黄德修, 黄菊仙

Chin. J. Semicond. 1992, 13(9): 539-546

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1992, 13(9): 539.

刘德明, 黄德修, 黄菊仙. 半导体激光器功率输出特性的理论分析及实验研究[J]. Chin. J. Semicond., 1992, 13(9): 539..Export: BibTex EndNote

刘德明, 黄德修, 黄菊仙. 半导体激光器功率输出特性的理论分析及实验研究[J]. Chin. J. Semicond., 1992, 13(9): 539...

簿全耗尽SOI膜N沟道MOSFET强反型电流模型

程玉华, 王阳元

Chin. J. Semicond. 1992, 13(9): 547-553

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1992, 13(9): 547.

程玉华, 王阳元. 簿全耗尽SOI膜N沟道MOSFET强反型电流模型[J]. Chin. J. Semicond., 1992, 13(9): 547..Export: BibTex EndNote

程玉华, 王阳元. 簿全耗尽SOI膜N沟道MOSFET强反型电流模型[J]. Chin. J. Semicond., 1992, 13(9): 547...

CMOS倒相链瞬态对延迟模型分析

郝跃

Chin. J. Semicond. 1992, 13(9): 554-563

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1992, 13(9): 554.

郝跃. CMOS倒相链瞬态对延迟模型分析[J]. Chin. J. Semicond., 1992, 13(9): 554..Export: BibTex EndNote

郝跃. CMOS倒相链瞬态对延迟模型分析[J]. Chin. J. Semicond., 1992, 13(9): 554...

亚微米MOS场效应管的完全解析二维模型

汤庭鳌, C.A.Paz de Araujo

Chin. J. Semicond. 1992, 13(9): 564-572

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1992, 13(9): 564.

汤庭鳌, C.A.Paz de Araujo. 亚微米MOS场效应管的完全解析二维模型[J]. Chin. J. Semicond., 1992, 13(9): 564..Export: BibTex EndNote

汤庭鳌, C.A.Paz de Araujo. 亚微米MOS场效应管的完全解析二维模型[J]. Chin. J. Semicond., 1992, 13(9): 564...

红外透射光谱测量重掺杂化合物半导体裁流子浓度方法的研究

何秀坤, 王琴, 李光平, 阎萍, 汝琼娜, 李晓波

Chin. J. Semicond. 1992, 13(9): 573-578

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1992, 13(9): 573.

何秀坤, 王琴, 李光平, 阎萍, 汝琼娜, 李晓波. 红外透射光谱测量重掺杂化合物半导体裁流子浓度方法的研究[J]. Chin. J. Semicond., 1992, 13(9): 573..Export: BibTex EndNote

何秀坤, 王琴, 李光平, 阎萍, 汝琼娜, 李晓波. 红外透射光谱测量重掺杂化合物半导体裁流子浓度方法的研究[J]. Chin. J. Semicond., 1992, 13(9): 573...

霍尔器件的一种新的工作模式

易明銧

Chin. J. Semicond. 1992, 13(9): 579-583

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1992, 13(9): 579.

易明銧. 霍尔器件的一种新的工作模式[J]. Chin. J. Semicond., 1992, 13(9): 579..Export: BibTex EndNote

易明銧. 霍尔器件的一种新的工作模式[J]. Chin. J. Semicond., 1992, 13(9): 579...

Ga_(1-x)In_xSb/GaSb应变层超晶格的MOVPE生长

陆大成, 汪度, 刘祥林, 万寿科, 王玉田

Chin. J. Semicond. 1992, 13(9): 584-587

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1992, 13(9): 584.

陆大成, 汪度, 刘祥林, 万寿科, 王玉田. Ga_(1-x)In_xSb/GaSb应变层超晶格的MOVPE生长[J]. Chin. J. Semicond., 1992, 13(9): 584..Export: BibTex EndNote

陆大成, 汪度, 刘祥林, 万寿科, 王玉田. Ga_(1-x)In_xSb/GaSb应变层超晶格的MOVPE生长[J]. Chin. J. Semicond., 1992, 13(9): 584...

Search

Advanced Search >>

Issues

2024

Volume 45 lssue 3, Mar 2024

Volume 45 lssue 2, Feb 2024

Volume 45 lssue 1, Jan 2024
2023

Volume 44 lssue 12, Dec 2023

Volume 44 lssue 11, Nov 2023

Volume 44 lssue 10, Oct 2023

Volume 44 lssue 9, Sep 2023

Volume 44 lssue 8, Aug 2023

Volume 44 lssue 7, Jul 2023

Volume 44 lssue 6, Jun 2023

Volume 44 lssue 5, May 2023

Volume 44 lssue 4, Apr 2023

Volume 44 lssue 3, Mar 2023

Volume 44 lssue 2, Feb 2023

Volume 44 lssue 1, Jan 2023
2022

Volume 43 lssue 12, Dec 2022

Volume 43 lssue 11, Nov 2022

Volume 43 lssue 10, Oct 2022

Volume 43 lssue 9, Sep 2022

Volume 43 lssue 8, Aug 2022

Volume 43 lssue 7, Jul 2022

Volume 43 lssue 6, Jun 2022

Volume 43 lssue 5, May 2022

Volume 43 lssue 4, Apr 2022

Volume 43 lssue 3, Mar 2022

Volume 43 lssue 2, Feb 2022

Volume 43 lssue 1, Jan 2022
2021

Volume 42 lssue 12, Dec 2021

Volume 42 lssue 11, Nov 2021

Volume 42 lssue 10, Oct 2021

Volume 42 lssue 9, Sep 2021

Volume 42 lssue 8, Aug 2021

Volume 42 lssue 7, Jul 2021

Volume 42 lssue 6, Jun 2021

Volume 42 lssue 5, May 2021

Volume 42 lssue 4, Apr 2021

Volume 42 lssue 3, Mar 2021

Volume 42 lssue 2, Feb 2021

Volume 42 lssue 1, Jan 2021
2020

Volume 41 lssue 12, Dec 2020

Volume 41 lssue 11, Nov 2020

Volume 41 lssue 10, Oct 2020

Volume 41 lssue 9, Sep 2020

Volume 41 lssue 8, Aug 2020

Volume 41 lssue 7, Jul 2020

Volume 41 lssue 6, Jun 2020

Volume 41 lssue 5, May 2020

Volume 41 lssue 4, Apr 2020

Volume 41 lssue 3, Mar 2020

Volume 41 lssue 2, Feb 2020

Volume 41 lssue 1, Jan 2020

Authors Preparing Your Manuscript Submit Your Manuscript Peer-Review Policy Ethical Policy Copyright and Permissions Word Template EndNote for References
About the Journal About the Journal Scope Advisory Board Editorial Board Contact Information
Link JoS in IOPScience Live Report in KouShare (“半语-益言”直播讲座) ScienceDB PHYSIKE Dyna Sense(鼎信优威)
WeChat ID
Mobile Terminal

Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2

Export File

Format

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Content

Citation Only

Citation and Abstract

Citation