Journal of Semiconductors

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Volume 20, Issue 12, Dec 1999

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CONTENTS

GSMBE原位生长SiGeHBT材料

黄大定, 刘金平, 李建平, 林燕霞, 刘学锋, 李灵霄, 孙殿照, 孔梅影, 林兰英

Chin. J. Semicond. 1999, 20(12): 1049-1053

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1049.

黄大定, 刘金平, 李建平, 林燕霞, 刘学锋, 李灵霄, 孙殿照, 孔梅影, 林兰英. GSMBE原位生长SiGeHBT材料[J]. Chin. J. Semicond., 1999, 20(12): 1049..Export: BibTex EndNote

黄大定, 刘金平, 李建平, 林燕霞, 刘学锋, 李灵霄, 孙殿照, 孔梅影, 林兰英. GSMBE原位生长SiGeHBT材料[J]. Chin. J. Semicond., 1999, 20(12): 1049...

生长温度对长波长InP/AlGaInAs/InP材料LP-MOCVD生长的影响

陈博, 王圩

Chin. J. Semicond. 1999, 20(12): 1054-1058

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1054.

陈博, 王圩. 生长温度对长波长InP/AlGaInAs/InP材料LP-MOCVD生长的影响[J]. Chin. J. Semicond., 1999, 20(12): 1054..Export: BibTex EndNote

陈博, 王圩. 生长温度对长波长InP/AlGaInAs/InP材料LP-MOCVD生长的影响[J]. Chin. J. Semicond., 1999, 20(12): 1054...

Cd Zn Te晶体中位错分布特性研究

顾惠明, 杨建荣, 陈新强, 何力

Chin. J. Semicond. 1999, 20(12): 1059-1063

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1059.

顾惠明, 杨建荣, 陈新强, 何力. Cd Zn Te晶体中位错分布特性研究[J]. Chin. J. Semicond., 1999, 20(12): 1059..Export: BibTex EndNote

顾惠明, 杨建荣, 陈新强, 何力. Cd Zn Te晶体中位错分布特性研究[J]. Chin. J. Semicond., 1999, 20(12): 1059...

硅中的氮氧复合物及其施主行为

刘培东, 张锦心, 李立本, 阙端麟

Chin. J. Semicond. 1999, 20(12): 1064-1070

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1064.

刘培东, 张锦心, 李立本, 阙端麟. 硅中的氮氧复合物及其施主行为[J]. Chin. J. Semicond., 1999, 20(12): 1064..Export: BibTex EndNote

刘培东, 张锦心, 李立本, 阙端麟. 硅中的氮氧复合物及其施主行为[J]. Chin. J. Semicond., 1999, 20(12): 1064...

O76mm智能剥离SOI材料的制备及其表面缺陷的分析

竺士炀, 黄宜平, 李爱珍, 吴东平, 王瑾, 茹国平, 包宗明

Chin. J. Semicond. 1999, 20(12): 1071-1074

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1071.

竺士炀, 黄宜平, 李爱珍, 吴东平, 王瑾, 茹国平, 包宗明. O76mm智能剥离SOI材料的制备及其表面缺陷的分析[J]. Chin. J. Semicond., 1999, 20(12): 1071..Export: BibTex EndNote

竺士炀, 黄宜平, 李爱珍, 吴东平, 王瑾, 茹国平, 包宗明. O76mm智能剥离SOI材料的制备及其表面缺陷的分析[J]. Chin. J. Semicond., 1999, 20(12): 1071...

一种新型的MOS栅控晶体管——MOSGCT

刘海涛, 陈启秀, 白玉明

Chin. J. Semicond. 1999, 20(12): 1075-1080

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1075.

刘海涛, 陈启秀, 白玉明. 一种新型的MOS栅控晶体管——MOSGCT[J]. Chin. J. Semicond., 1999, 20(12): 1075..Export: BibTex EndNote

刘海涛, 陈启秀, 白玉明. 一种新型的MOS栅控晶体管——MOSGCT[J]. Chin. J. Semicond., 1999, 20(12): 1075...

一种单锁存器CMOS静态D触发器的设计

莫凡, 俞军, 章倩苓

Chin. J. Semicond. 1999, 20(12): 1081-1086

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1081.

莫凡, 俞军, 章倩苓. 一种单锁存器CMOS静态D触发器的设计[J]. Chin. J. Semicond., 1999, 20(12): 1081..Export: BibTex EndNote

莫凡, 俞军, 章倩苓. 一种单锁存器CMOS静态D触发器的设计[J]. Chin. J. Semicond., 1999, 20(12): 1081...

热载流子应力感应n-MOSFETsGIDL特性退化的机理

徐静平, 黎沛涛

Chin. J. Semicond. 1999, 20(12): 1087-1092

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1087.

徐静平, 黎沛涛. 热载流子应力感应n-MOSFETsGIDL特性退化的机理[J]. Chin. J. Semicond., 1999, 20(12): 1087..Export: BibTex EndNote

徐静平, 黎沛涛. 热载流子应力感应n-MOSFETsGIDL特性退化的机理[J]. Chin. J. Semicond., 1999, 20(12): 1087...

背栅效应对GaAsMESFETV_(th)均匀性的影响

刘汝萍, 赵建龙, 夏冠群, 吴剑萍, 顾成余, 詹琰

Chin. J. Semicond. 1999, 20(12): 1093-1097

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1093.

刘汝萍, 赵建龙, 夏冠群, 吴剑萍, 顾成余, 詹琰. 背栅效应对GaAsMESFETV_(th)均匀性的影响[J]. Chin. J. Semicond., 1999, 20(12): 1093..Export: BibTex EndNote

刘汝萍, 赵建龙, 夏冠群, 吴剑萍, 顾成余, 詹琰. 背栅效应对GaAsMESFETV_(th)均匀性的影响[J]. Chin. J. Semicond., 1999, 20(12): 1093...

1.55μm波段低偏振灵敏度半导体光放大器

段子刚, 黄格凡, 张哲民, 刘德明, 黄德修

Chin. J. Semicond. 1999, 20(12): 1098-1101

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1098.

段子刚, 黄格凡, 张哲民, 刘德明, 黄德修. 1.55μm波段低偏振灵敏度半导体光放大器[J]. Chin. J. Semicond., 1999, 20(12): 1098..Export: BibTex EndNote

段子刚, 黄格凡, 张哲民, 刘德明, 黄德修. 1.55μm波段低偏振灵敏度半导体光放大器[J]. Chin. J. Semicond., 1999, 20(12): 1098...

交叉增益调制型全光波长转换器频响特性的小信号分析

孙军强, 黄德修, 易河清

Chin. J. Semicond. 1999, 20(12): 1102-1108

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1102.

孙军强, 黄德修, 易河清. 交叉增益调制型全光波长转换器频响特性的小信号分析[J]. Chin. J. Semicond., 1999, 20(12): 1102..Export: BibTex EndNote

孙军强, 黄德修, 易河清. 交叉增益调制型全光波长转换器频响特性的小信号分析[J]. Chin. J. Semicond., 1999, 20(12): 1102...

ECR Plasma CVD淀积介质膜折射率的神经网络模拟

李玉鉴, 谭满清, 茅冬生, 陆建祖

Chin. J. Semicond. 1999, 20(12): 1109-1114

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1109.

李玉鉴, 谭满清, 茅冬生, 陆建祖. ECR Plasma CVD淀积介质膜折射率的神经网络模拟[J]. Chin. J. Semicond., 1999, 20(12): 1109..Export: BibTex EndNote

李玉鉴, 谭满清, 茅冬生, 陆建祖. ECR Plasma CVD淀积介质膜折射率的神经网络模拟[J]. Chin. J. Semicond., 1999, 20(12): 1109...

性能驱动的多层布线有约束分层及其神经网络求解方法

胡卫明, 严晓浪

Chin. J. Semicond. 1999, 20(12): 1115-1121

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1115.

胡卫明, 严晓浪. 性能驱动的多层布线有约束分层及其神经网络求解方法[J]. Chin. J. Semicond., 1999, 20(12): 1115..Export: BibTex EndNote

胡卫明, 严晓浪. 性能驱动的多层布线有约束分层及其神经网络求解方法[J]. Chin. J. Semicond., 1999, 20(12): 1115...

Ultralow Threshold Lasing in InGaAs/InGaAs PMQ WMicrodisk Laser

Ning Yongqiang， Wu Shengli，Wang Lijun, Lin Jiuling， Fu Dehui, Liu Yun， Wu Dongjiang, Zhao Jiamin), Liu Xingyuan, Jin Yix

Chin. J. Semicond. 1999, 20(12): 1122-1124

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1122.

N Y W S Lijun, L J F Dehui, L Y W Dongjiang, Z Jiamin), L X yuan, J Yix. Ultralow Threshold Lasing in InGaAs/InGaAs PMQ WMicrodisk Laser[J]. Chin. J. Semicond., 1999, 20(12): 1122..Export: BibTex EndNote

N Y W S Lijun, L J F Dehui, L Y W Dongjiang, Z Jiamin), L X yuan, J Yix. Ultralow Threshold Lasing in InGaAs/InGaAs PMQ WMicrodisk Laser[J]. Chin. J. Semicond., 1999, 20(12): 1122...

Fluorescence Properties of Cd(OH)_2-activated CdSandCuS-coated CdSNanocry stals

Chen Hongming， Huang Xinfan， Xu Ling, He Yong， Chen Kunji

Chin. J. Semicond. 1999, 20(12): 1125-1128

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1125.

C H H X X Ling, H Y C Kunji. Fluorescence Properties of Cd(OH)_2-activated CdSandCuS-coated CdSNanocry stals[J]. Chin. J. Semicond., 1999, 20(12): 1125..Export: BibTex EndNote

C H H X X Ling, H Y C Kunji. Fluorescence Properties of Cd(OH)_2-activated CdSandCuS-coated CdSNanocry stals[J]. Chin. J. Semicond., 1999, 20(12): 1125...

测量半导体中少子漂移迁移率和扩散长度的新方法

李言谨, 方家熊

Chin. J. Semicond. 1999, 20(12): 1129-1131

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1129.

李言谨, 方家熊. 测量半导体中少子漂移迁移率和扩散长度的新方法[J]. Chin. J. Semicond., 1999, 20(12): 1129..Export: BibTex EndNote

李言谨, 方家熊. 测量半导体中少子漂移迁移率和扩散长度的新方法[J]. Chin. J. Semicond., 1999, 20(12): 1129...

硫化压力对FeS_2薄膜结构和光学性能的影响

徐文雷, 孟亮, 刘茂森

Chin. J. Semicond. 1999, 20(12): 1132-1136

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1999, 20(12): 1132.

徐文雷, 孟亮, 刘茂森. 硫化压力对FeS_2薄膜结构和光学性能的影响[J]. Chin. J. Semicond., 1999, 20(12): 1132..Export: BibTex EndNote

徐文雷, 孟亮, 刘茂森. 硫化压力对FeS_2薄膜结构和光学性能的影响[J]. Chin. J. Semicond., 1999, 20(12): 1132...

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