Journal of Semiconductors

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Volume 16, Issue 12, Dec 1995

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CONTENTS

强反馈外腔半导体激光器线宽特性研究

柴燕杰，张汉一，周炳琨

Chin. J. Semicond. 1995, 16(12): 885-889

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 885.

柴燕杰，张汉一，周炳琨. 强反馈外腔半导体激光器线宽特性研究[J]. Chin. J. Semicond., 1995, 16(12): 885..Export: BibTex EndNote

柴燕杰，张汉一，周炳琨. 强反馈外腔半导体激光器线宽特性研究[J]. Chin. J. Semicond., 1995, 16(12): 885...

SIPOS障的结构织成

谭凌，雷沛云，梁骏吾

Chin. J. Semicond. 1995, 16(12): 890-896

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 890.

谭凌，雷沛云，梁骏吾. SIPOS障的结构织成[J]. Chin. J. Semicond., 1995, 16(12): 890..Export: BibTex EndNote

谭凌，雷沛云，梁骏吾. SIPOS障的结构织成[J]. Chin. J. Semicond., 1995, 16(12): 890...

MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究

牛智川，周增圻，林耀望，李朝勇

Chin. J. Semicond. 1995, 16(12): 897-900

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 897.

牛智川，周增圻，林耀望，李朝勇. MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究[J]. Chin. J. Semicond., 1995, 16(12): 897..Export: BibTex EndNote

牛智川，周增圻，林耀望，李朝勇. MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究[J]. Chin. J. Semicond., 1995, 16(12): 897...

ZnMgSSe／GaAs薄膜的分子束外延生长及其特性研究

诸长生，俞根才，陈良尧，王杰，王迅

Chin. J. Semicond. 1995, 16(12): 901-904

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 901.

诸长生，俞根才，陈良尧，王杰，王迅. ZnMgSSe／GaAs薄膜的分子束外延生长及其特性研究[J]. Chin. J. Semicond., 1995, 16(12): 901..Export: BibTex EndNote

诸长生，俞根才，陈良尧，王杰，王迅. ZnMgSSe／GaAs薄膜的分子束外延生长及其特性研究[J]. Chin. J. Semicond., 1995, 16(12): 901...

锗硅量子阱异质界面附近缺陷研究

王勤华，陆昉，龚大卫，王建宝，孙恒慧

Chin. J. Semicond. 1995, 16(12): 905-908

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 905.

王勤华，陆昉，龚大卫，王建宝，孙恒慧. 锗硅量子阱异质界面附近缺陷研究[J]. Chin. J. Semicond., 1995, 16(12): 905..Export: BibTex EndNote

王勤华，陆昉，龚大卫，王建宝，孙恒慧. 锗硅量子阱异质界面附近缺陷研究[J]. Chin. J. Semicond., 1995, 16(12): 905...

~（60）CO－γ辐照感生Si／SiO_2慢界面态及其对高频C－V测试的影响

高文钰，严荣良，任迪远

Chin. J. Semicond. 1995, 16(12): 909-912

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 909.

高文钰，严荣良，任迪远. ~（60）CO－γ辐照感生Si／SiO_2慢界面态及其对高频C－V测试的影响[J]. Chin. J. Semicond., 1995, 16(12): 909..Export: BibTex EndNote

高文钰，严荣良，任迪远. ~（60）CO－γ辐照感生Si／SiO_2慢界面态及其对高频C－V测试的影响[J]. Chin. J. Semicond., 1995, 16(12): 909...

纳米硅薄膜的电致发光和光致发光

余明斌，李雪梅，何宇亮，徐士杰，刘剑，罗晋生，魏希文，郑厚植，戌霭伦

Chin. J. Semicond. 1995, 16(12): 913-916

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 913.

余明斌，李雪梅，何宇亮，徐士杰，刘剑，罗晋生，魏希文，郑厚植，戌霭伦. 纳米硅薄膜的电致发光和光致发光[J]. Chin. J. Semicond., 1995, 16(12): 913..Export: BibTex EndNote

余明斌，李雪梅，何宇亮，徐士杰，刘剑，罗晋生，魏希文，郑厚植，戌霭伦. 纳米硅薄膜的电致发光和光致发光[J]. Chin. J. Semicond., 1995, 16(12): 913...

纳米硅薄膜表面形貌分形特征的STM研究

万明芳，魏希文，李建军，邹赫麟，袁凯华，何宇亮

Chin. J. Semicond. 1995, 16(12): 917-920

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 917.

万明芳，魏希文，李建军，邹赫麟，袁凯华，何宇亮. 纳米硅薄膜表面形貌分形特征的STM研究[J]. Chin. J. Semicond., 1995, 16(12): 917..Export: BibTex EndNote

万明芳，魏希文，李建军，邹赫麟，袁凯华，何宇亮. 纳米硅薄膜表面形貌分形特征的STM研究[J]. Chin. J. Semicond., 1995, 16(12): 917...

硅微结构加速度传感器空气阻尼的研究

陈宏，鲍敏杭

Chin. J. Semicond. 1995, 16(12): 921-927

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 921.

陈宏，鲍敏杭. 硅微结构加速度传感器空气阻尼的研究[J]. Chin. J. Semicond., 1995, 16(12): 921..Export: BibTex EndNote

陈宏，鲍敏杭. 硅微结构加速度传感器空气阻尼的研究[J]. Chin. J. Semicond., 1995, 16(12): 921...

SOI定向耦合器研制

赵策洲，李国正，刘恩科，刘西钉，高勇

Chin. J. Semicond. 1995, 16(12): 928-931

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 928.

赵策洲，李国正，刘恩科，刘西钉，高勇. SOI定向耦合器研制[J]. Chin. J. Semicond., 1995, 16(12): 928..Export: BibTex EndNote

赵策洲，李国正，刘恩科，刘西钉，高勇. SOI定向耦合器研制[J]. Chin. J. Semicond., 1995, 16(12): 928...

砷化镓ASIC电路实用库的研究

杨国洪，范恒，王碧娟，夏冠群，章洪深，甘骏人，姚林声，凌雷

Chin. J. Semicond. 1995, 16(12): 932-936

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 932.

杨国洪，范恒，王碧娟，夏冠群，章洪深，甘骏人，姚林声，凌雷. 砷化镓ASIC电路实用库的研究[J]. Chin. J. Semicond., 1995, 16(12): 932..Export: BibTex EndNote

杨国洪，范恒，王碧娟，夏冠群，章洪深，甘骏人，姚林声，凌雷. 砷化镓ASIC电路实用库的研究[J]. Chin. J. Semicond., 1995, 16(12): 932...

光开关交叉角的上限和开关对数值孔径的影响

康寿万，董玉和，庄婉如

Chin. J. Semicond. 1995, 16(12): 937-941

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 937.

康寿万，董玉和，庄婉如. 光开关交叉角的上限和开关对数值孔径的影响[J]. Chin. J. Semicond., 1995, 16(12): 937..Export: BibTex EndNote

康寿万，董玉和，庄婉如. 光开关交叉角的上限和开关对数值孔径的影响[J]. Chin. J. Semicond., 1995, 16(12): 937...

嵌于多孔硅的C_（60）的光致发光

阎锋，鲍希茂，吴晓薇，陈慧兰

Chin. J. Semicond. 1995, 16(12): 942-946

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 942.

阎锋，鲍希茂，吴晓薇，陈慧兰. 嵌于多孔硅的C_（60）的光致发光[J]. Chin. J. Semicond., 1995, 16(12): 942..Export: BibTex EndNote

阎锋，鲍希茂，吴晓薇，陈慧兰. 嵌于多孔硅的C_（60）的光致发光[J]. Chin. J. Semicond., 1995, 16(12): 942...

多孔硅发光峰位波长为370nm的紫外光发射

林军，姚光庆，段家，秦国刚

Chin. J. Semicond. 1995, 16(12): 947-950

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 947.

林军，姚光庆，段家，秦国刚. 多孔硅发光峰位波长为370nm的紫外光发射[J]. Chin. J. Semicond., 1995, 16(12): 947..Export: BibTex EndNote

林军，姚光庆，段家，秦国刚. 多孔硅发光峰位波长为370nm的紫外光发射[J]. Chin. J. Semicond., 1995, 16(12): 947...

室温连续的新结构垂直腔面发射半导体激光器

刘颖，杜国同，姜秀英，刘素平，张晓波，赵永生，高鼎三，林世鸣，康学军，高洪海，高俊华，王红杰

Chin. J. Semicond. 1995, 16(12): 951-954

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1995, 16(12): 951.

刘颖，杜国同，姜秀英，刘素平，张晓波，赵永生，高鼎三，林世鸣，康学军，高洪海，高俊华，王红杰. 室温连续的新结构垂直腔面发射半导体激光器[J]. Chin. J. Semicond., 1995, 16(12): 951..Export: BibTex EndNote

刘颖，杜国同，姜秀英，刘素平，张晓波，赵永生，高鼎三，林世鸣，康学军，高洪海，高俊华，王红杰. 室温连续的新结构垂直腔面发射半导体激光器[J]. Chin. J. Semicond., 1995, 16(12): 951...

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