Journal of Semiconductors

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Volume 17, Issue 11, Nov 1996

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CONTENTS

AlGaAs／InGaAs／GaAs异质结构中扩散噪声和扩散系数的蒙特卡罗研究

吴渊，牛国富，阮刚

Chin. J. Semicond. 1996, 17(11): 801-806

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 801.

吴渊，牛国富，阮刚. AlGaAs／InGaAs／GaAs异质结构中扩散噪声和扩散系数的蒙特卡罗研究[J]. Chin. J. Semicond., 1996, 17(11): 801..Export: BibTex EndNote

吴渊，牛国富，阮刚. AlGaAs／InGaAs／GaAs异质结构中扩散噪声和扩散系数的蒙特卡罗研究[J]. Chin. J. Semicond., 1996, 17(11): 801...

Sm在GaAs（100）表面的吸附和界面反应的SRPES研究

徐世红，陆尔东，余小江，潘海斌，张发培，徐彭寿

Chin. J. Semicond. 1996, 17(11): 807-812

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 807.

徐世红，陆尔东，余小江，潘海斌，张发培，徐彭寿. Sm在GaAs（100）表面的吸附和界面反应的SRPES研究[J]. Chin. J. Semicond., 1996, 17(11): 807..Export: BibTex EndNote

徐世红，陆尔东，余小江，潘海斌，张发培，徐彭寿. Sm在GaAs（100）表面的吸附和界面反应的SRPES研究[J]. Chin. J. Semicond., 1996, 17(11): 807...

InGaAsP／InP MQW电流控制型双稳／非线性增益开关激光器

张权生，石志文，杜云，颜学进，赵军

Chin. J. Semicond. 1996, 17(11): 813-816

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 813.

张权生，石志文，杜云，颜学进，赵军. InGaAsP／InP MQW电流控制型双稳／非线性增益开关激光器[J]. Chin. J. Semicond., 1996, 17(11): 813..Export: BibTex EndNote

张权生，石志文，杜云，颜学进，赵军. InGaAsP／InP MQW电流控制型双稳／非线性增益开关激光器[J]. Chin. J. Semicond., 1996, 17(11): 813...

MIS（Au－SiO_2－Si）隧道发光结

蔡益民，孙承烋，高中林

Chin. J. Semicond. 1996, 17(11): 817-821

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 817.

蔡益民，孙承烋，高中林. MIS（Au－SiO_2－Si）隧道发光结[J]. Chin. J. Semicond., 1996, 17(11): 817..Export: BibTex EndNote

蔡益民，孙承烋，高中林. MIS（Au－SiO_2－Si）隧道发光结[J]. Chin. J. Semicond., 1996, 17(11): 817...

适用于大电流的SiGe基区HBT的电流和频率特性的解析模型

钱晓州，阮刚

Chin. J. Semicond. 1996, 17(11): 822-829

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 822.

钱晓州，阮刚. 适用于大电流的SiGe基区HBT的电流和频率特性的解析模型[J]. Chin. J. Semicond., 1996, 17(11): 822..Export: BibTex EndNote

钱晓州，阮刚. 适用于大电流的SiGe基区HBT的电流和频率特性的解析模型[J]. Chin. J. Semicond., 1996, 17(11): 822...

18位过采样∑△A／D变换器设计

洪志良，曹先国，王晓悦

Chin. J. Semicond. 1996, 17(11): 830-838

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 830.

洪志良，曹先国，王晓悦. 18位过采样∑△A／D变换器设计[J]. Chin. J. Semicond., 1996, 17(11): 830..Export: BibTex EndNote

洪志良，曹先国，王晓悦. 18位过采样∑△A／D变换器设计[J]. Chin. J. Semicond., 1996, 17(11): 830...

一种减小关键路径延迟的回路布线法

乔长阁，洪先龙

Chin. J. Semicond. 1996, 17(11): 839-845

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 839.

乔长阁，洪先龙. 一种减小关键路径延迟的回路布线法[J]. Chin. J. Semicond., 1996, 17(11): 839..Export: BibTex EndNote

乔长阁，洪先龙. 一种减小关键路径延迟的回路布线法[J]. Chin. J. Semicond., 1996, 17(11): 839...

制备参数和退火对a－C∶H膜光学性质的影响

陈光华，卢阳华

Chin. J. Semicond. 1996, 17(11): 846-851

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 846.

陈光华，卢阳华. 制备参数和退火对a－C∶H膜光学性质的影响[J]. Chin. J. Semicond., 1996, 17(11): 846..Export: BibTex EndNote

陈光华，卢阳华. 制备参数和退火对a－C∶H膜光学性质的影响[J]. Chin. J. Semicond., 1996, 17(11): 846...

氧化物中固定电荷对硅场致发射的影响

黄庆安

Chin. J. Semicond. 1996, 17(11): 852-857

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 852.

黄庆安. 氧化物中固定电荷对硅场致发射的影响[J]. Chin. J. Semicond., 1996, 17(11): 852..Export: BibTex EndNote

黄庆安. 氧化物中固定电荷对硅场致发射的影响[J]. Chin. J. Semicond., 1996, 17(11): 852...

SiGe／Si异质结构MOS器件栅介质技术研究

亓文杰，於伟峰，李炳宗，顾志光，黄维宁，姜国宝，张翔九

Chin. J. Semicond. 1996, 17(11): 858-862

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 858.

亓文杰，於伟峰，李炳宗，顾志光，黄维宁，姜国宝，张翔九. SiGe／Si异质结构MOS器件栅介质技术研究[J]. Chin. J. Semicond., 1996, 17(11): 858..Export: BibTex EndNote

亓文杰，於伟峰，李炳宗，顾志光，黄维宁，姜国宝，张翔九. SiGe／Si异质结构MOS器件栅介质技术研究[J]. Chin. J. Semicond., 1996, 17(11): 858...

X射线衍射动力学理论研究As~＋注入Si

马德录，李晓舟，毛晓峰，高雅君

Chin. J. Semicond. 1996, 17(11): 863-868

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 863.

马德录，李晓舟，毛晓峰，高雅君. X射线衍射动力学理论研究As~＋注入Si[J]. Chin. J. Semicond., 1996, 17(11): 863..Export: BibTex EndNote

马德录，李晓舟，毛晓峰，高雅君. X射线衍射动力学理论研究As~＋注入Si[J]. Chin. J. Semicond., 1996, 17(11): 863...

GaAs（100）衬底上自组织生长InAs量子点的研究

杨小平，张伟，陈宗圭，王凤莲，田金法，邓元明，郑厚植，高旻，段晓峰

Chin. J. Semicond. 1996, 17(11): 869-872

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 869.

杨小平，张伟，陈宗圭，王凤莲，田金法，邓元明，郑厚植，高旻，段晓峰. GaAs（100）衬底上自组织生长InAs量子点的研究[J]. Chin. J. Semicond., 1996, 17(11): 869..Export: BibTex EndNote

杨小平，张伟，陈宗圭，王凤莲，田金法，邓元明，郑厚植，高旻，段晓峰. GaAs（100）衬底上自组织生长InAs量子点的研究[J]. Chin. J. Semicond., 1996, 17(11): 869...

由选择腐蚀和选择氧化法相结合研制的GaAs／AlGaAs垂直腔面发射激光器

康学军，林世鸣，高俊华，高洪海，王启明，王红杰，王立轩，张春晖

Chin. J. Semicond. 1996, 17(11): 873-876

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 873.

康学军，林世鸣，高俊华，高洪海，王启明，王红杰，王立轩，张春晖. 由选择腐蚀和选择氧化法相结合研制的GaAs／AlGaAs垂直腔面发射激光器[J]. Chin. J. Semicond., 1996, 17(11): 873..Export: BibTex EndNote

康学军，林世鸣，高俊华，高洪海，王启明，王红杰，王立轩，张春晖. 由选择腐蚀和选择氧化法相结合研制的GaAs／AlGaAs垂直腔面发射激光器[J]. Chin. J. Semicond., 1996, 17(11): 873...

硅基上直流反应磁控溅射沉积优质ZnO薄膜及其性能研究

李剑光，叶志镇，赵炳辉，袁骏

Chin. J. Semicond. 1996, 17(11): 877-880

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(11): 877.

李剑光，叶志镇，赵炳辉，袁骏. 硅基上直流反应磁控溅射沉积优质ZnO薄膜及其性能研究[J]. Chin. J. Semicond., 1996, 17(11): 877..Export: BibTex EndNote

李剑光，叶志镇，赵炳辉，袁骏. 硅基上直流反应磁控溅射沉积优质ZnO薄膜及其性能研究[J]. Chin. J. Semicond., 1996, 17(11): 877...

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