Issue Browser
Volume 20, Issue 3,
Mar 1999
Chin. J. Semicond.
1999, 20(3): 188-193
Chin. J. Semicond.
1999, 20(3): 194-199
Chin. J. Semicond.
1999, 20(3): 214-218
We have investigated the AlGaInA/InP compressively strained layer separate confinement heterostructure multiquantum well (SCH-MQW) laser structure, which was grown by Low-Pressure Metalorganic Vapor phase Epitaxy. The T0 of AlGaInA/InP SCH-MQW buried-heterostructure lasers was up to 110K at temperatures between 20℃ and 60℃. The drop of slope efficiencies was only 0.54dB at temperatures between 20℃ and 80℃.
Chin. J. Semicond.
1999, 20(3): 225-230