Journal of Semiconductors

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Volume 6, Issue 1, Jan 1985

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CONTENTS

硅耗尽层少子产生率的强电场效应

李志坚, 田立林, 马鑫荣

Chin. J. Semicond. 1985, 6(1): 1-10

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 1.

李志坚, 田立林, 马鑫荣. 硅耗尽层少子产生率的强电场效应[J]. Chin. J. Semicond., 1985, 6(1): 1..Export: BibTex EndNote

李志坚, 田立林, 马鑫荣. 硅耗尽层少子产生率的强电场效应[J]. Chin. J. Semicond., 1985, 6(1): 1...

离子注入CO_2激光退火硅中的深能级缺陷

鲍希茂, 张新宇, 柳承恩

Chin. J. Semicond. 1985, 6(1): 11-18

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 11.

鲍希茂, 张新宇, 柳承恩. 离子注入CO_2激光退火硅中的深能级缺陷[J]. Chin. J. Semicond., 1985, 6(1): 11..Export: BibTex EndNote

鲍希茂, 张新宇, 柳承恩. 离子注入CO_2激光退火硅中的深能级缺陷[J]. Chin. J. Semicond., 1985, 6(1): 11...

硼注入<100>硅残余缺陷的沟道研究

邹世昌, 倪如山, 张祖华

Chin. J. Semicond. 1985, 6(1): 19-24

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 19.

邹世昌, 倪如山, 张祖华. 硼注入硅残余缺陷的沟道研究[J]. Chin. J. Semicond., 1985, 6(1): 19..Export: BibTex EndNote

邹世昌, 倪如山, 张祖华. 硼注入硅残余缺陷的沟道研究[J]. Chin. J. Semicond., 1985, 6(1): 19...

二硫化钛电输运过程中的散射机制

陈昕, 何青, 王桢枢, 周熙宁

Chin. J. Semicond. 1985, 6(1): 25-31

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 25.

陈昕, 何青, 王桢枢, 周熙宁. 二硫化钛电输运过程中的散射机制[J]. Chin. J. Semicond., 1985, 6(1): 25..Export: BibTex EndNote

陈昕, 何青, 王桢枢, 周熙宁. 二硫化钛电输运过程中的散射机制[J]. Chin. J. Semicond., 1985, 6(1): 25...

在GaAs-Ga_(1-x)Al_xAs量子阱结构中的施主束缚能

刘振鹏, 李天克

Chin. J. Semicond. 1985, 6(1): 32-40

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 32.

刘振鹏, 李天克. 在GaAs-Ga_(1-x)Al_xAs量子阱结构中的施主束缚能[J]. Chin. J. Semicond., 1985, 6(1): 32..Export: BibTex EndNote

刘振鹏, 李天克. 在GaAs-Ga_(1-x)Al_xAs量子阱结构中的施主束缚能[J]. Chin. J. Semicond., 1985, 6(1): 32...

SiO_2中电子束辐照产生的电子陷阱

朱文珍, 常秀勤, 李月霞, 安贵仁, 宁华

Chin. J. Semicond. 1985, 6(1): 41-48

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 41.

朱文珍, 常秀勤, 李月霞, 安贵仁, 宁华. SiO_2中电子束辐照产生的电子陷阱[J]. Chin. J. Semicond., 1985, 6(1): 41..Export: BibTex EndNote

朱文珍, 常秀勤, 李月霞, 安贵仁, 宁华. SiO_2中电子束辐照产生的电子陷阱[J]. Chin. J. Semicond., 1985, 6(1): 41...

凹源结构场效应晶体管

潘晓明

Chin. J. Semicond. 1985, 6(1): 49-54

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 49.

潘晓明. 凹源结构场效应晶体管[J]. Chin. J. Semicond., 1985, 6(1): 49..Export: BibTex EndNote

潘晓明. 凹源结构场效应晶体管[J]. Chin. J. Semicond., 1985, 6(1): 49...

MoNb-GaAs肖脱基势垒二极管的界面分析

俞鸣人, 朱福荣, 王迅, 王滨崎, 邵凯, 卜积善, 雷传仁

Chin. J. Semicond. 1985, 6(1): 55-60

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 55.

俞鸣人, 朱福荣, 王迅, 王滨崎, 邵凯, 卜积善, 雷传仁. MoNb-GaAs肖脱基势垒二极管的界面分析[J]. Chin. J. Semicond., 1985, 6(1): 55..Export: BibTex EndNote

俞鸣人, 朱福荣, 王迅, 王滨崎, 邵凯, 卜积善, 雷传仁. MoNb-GaAs肖脱基势垒二极管的界面分析[J]. Chin. J. Semicond., 1985, 6(1): 55...

碲化铅/碲锡铅异质结构二极管结电阻的温度关系

张素英, 乔怡敏

Chin. J. Semicond. 1985, 6(1): 61-66

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 61.

张素英, 乔怡敏. 碲化铅/碲锡铅异质结构二极管结电阻的温度关系[J]. Chin. J. Semicond., 1985, 6(1): 61..Export: BibTex EndNote

张素英, 乔怡敏. 碲化铅/碲锡铅异质结构二极管结电阻的温度关系[J]. Chin. J. Semicond., 1985, 6(1): 61...

GaAs FETs的小讯号微波网络参数的计算和分析

汪正孝

Chin. J. Semicond. 1985, 6(1): 67-75

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 67.

汪正孝. GaAs FETs的小讯号微波网络参数的计算和分析[J]. Chin. J. Semicond., 1985, 6(1): 67..Export: BibTex EndNote

汪正孝. GaAs FETs的小讯号微波网络参数的计算和分析[J]. Chin. J. Semicond., 1985, 6(1): 67...

瞬态退火注砷硅亚稳态浓度的后热处理特性研究

徐立, 钱佩信, 侯东彦, 林惠旺, 李志坚, 王豫生, 阎建华, 郑胜男

Chin. J. Semicond. 1985, 6(1): 76-81

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 76.

徐立, 钱佩信, 侯东彦, 林惠旺, 李志坚, 王豫生, 阎建华, 郑胜男. 瞬态退火注砷硅亚稳态浓度的后热处理特性研究[J]. Chin. J. Semicond., 1985, 6(1): 76..Export: BibTex EndNote

徐立, 钱佩信, 侯东彦, 林惠旺, 李志坚, 王豫生, 阎建华, 郑胜男. 瞬态退火注砷硅亚稳态浓度的后热处理特性研究[J]. Chin. J. Semicond., 1985, 6(1): 76...

正弦平方势及退道过程的半经典描述

罗诗裕, 刘曾荣, 邵明珠

Chin. J. Semicond. 1985, 6(1): 82-85

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 82.

罗诗裕, 刘曾荣, 邵明珠. 正弦平方势及退道过程的半经典描述[J]. Chin. J. Semicond., 1985, 6(1): 82..Export: BibTex EndNote

罗诗裕, 刘曾荣, 邵明珠. 正弦平方势及退道过程的半经典描述[J]. Chin. J. Semicond., 1985, 6(1): 82...

一种直接由C-t参数确定未知掺杂样品产生寿命的方法

张秀淼

Chin. J. Semicond. 1985, 6(1): 86-89

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 86.

张秀淼. 一种直接由C-t参数确定未知掺杂样品产生寿命的方法[J]. Chin. J. Semicond., 1985, 6(1): 86..Export: BibTex EndNote

张秀淼. 一种直接由C-t参数确定未知掺杂样品产生寿命的方法[J]. Chin. J. Semicond., 1985, 6(1): 86...

不同原子组成的长链固体的表面态

庞小峰, 夏小林

Chin. J. Semicond. 1985, 6(1): 90-93

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 90.

庞小峰, 夏小林. 不同原子组成的长链固体的表面态[J]. Chin. J. Semicond., 1985, 6(1): 90..Export: BibTex EndNote

庞小峰, 夏小林. 不同原子组成的长链固体的表面态[J]. Chin. J. Semicond., 1985, 6(1): 90...

InP(110)表面电子能带计算

徐至中

Chin. J. Semicond. 1985, 6(1): 94-97

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 94.

徐至中. InP(110)表面电子能带计算[J]. Chin. J. Semicond., 1985, 6(1): 94..Export: BibTex EndNote

徐至中. InP(110)表面电子能带计算[J]. Chin. J. Semicond., 1985, 6(1): 94...

新的InP位错腐蚀剂

王兢, 夏平

Chin. J. Semicond. 1985, 6(1): 98-99

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 98.

王兢, 夏平. 新的InP位错腐蚀剂[J]. Chin. J. Semicond., 1985, 6(1): 98..Export: BibTex EndNote

王兢, 夏平. 新的InP位错腐蚀剂[J]. Chin. J. Semicond., 1985, 6(1): 98...

半绝缘GaAs中的深能级

周炳林, 陈正秀

Chin. J. Semicond. 1985, 6(1): 100-103

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 100.

周炳林, 陈正秀. 半绝缘GaAs中的深能级[J]. Chin. J. Semicond., 1985, 6(1): 100..Export: BibTex EndNote

周炳林, 陈正秀. 半绝缘GaAs中的深能级[J]. Chin. J. Semicond., 1985, 6(1): 100...

一种汽相生长多层外延InP的方法

黄善祥

Chin. J. Semicond. 1985, 6(1): 104-106

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 104.

黄善祥. 一种汽相生长多层外延InP的方法[J]. Chin. J. Semicond., 1985, 6(1): 104..Export: BibTex EndNote

黄善祥. 一种汽相生长多层外延InP的方法[J]. Chin. J. Semicond., 1985, 6(1): 104...

用离子束混合形成硅化钛

胡仁元

Chin. J. Semicond. 1985, 6(1): 107-112

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1985, 6(1): 107.

胡仁元. 用离子束混合形成硅化钛[J]. Chin. J. Semicond., 1985, 6(1): 107..Export: BibTex EndNote

胡仁元. 用离子束混合形成硅化钛[J]. Chin. J. Semicond., 1985, 6(1): 107...

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