温度对势垒区δ掺杂量子阱Si/Ge_(0.3)Si_(0.7)的电子能带结构的影响
Chin. J. Semicond. 1996, 17(8): 561
(100)和(111)BGaAs衬底上的In_(0.14)Ga_(0.86)As/GaAs量子阱的发光特性和光跃迁能量计算
Chin. J. Semicond. 1996, 17(8): 568
稀磁半导体Zn_(1-x)Mn_xSe外延薄膜与超晶格的光学特性研究
Chin. J. Semicond. 1996, 17(8): 573
1.3μm直条形吸收区超辐射发光管的复折射率矢量束传播方法模拟
Chin. J. Semicond. 1996, 17(8): 578
GaAs、Al_xGa_(1-x)As外延层少子扩散长度及霍耳迁移率的无接触测
Chin. J. Semicond. 1996, 17(8): 583
Chin. J. Semicond. 1996, 17(8): 589
Chin. J. Semicond. 1996, 17(8): 595
77KFowler-Nordheim电子注入和栅氧化层俘获特性研究
Chin. J. Semicond. 1996, 17(8): 601
Chin. J. Semicond. 1996, 17(8): 607
Chin. J. Semicond. 1996, 17(8): 611
Chin. J. Semicond. 1996, 17(8): 617
Chin. J. Semicond. 1996, 17(8): 622
Chin. J. Semicond. 1996, 17(8): 628
Chin. J. Semicond. 1996, 17(8): 632
Chin. J. Semicond. 1996, 17(8): 637