Journal of Semiconductors

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Volume 17, Issue 8, Aug 1996

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CONTENTS

温度对势垒区δ掺杂量子阱Si／Ge_（0．3）Si_（0．7）的电子能带结构的影响

徐至中

Chin. J. Semicond. 1996, 17(8): 561-567

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 561.

徐至中. 温度对势垒区δ掺杂量子阱Si／Ge_（0．3）Si_（0．7）的电子能带结构的影响[J]. Chin. J. Semicond., 1996, 17(8): 561..Export: BibTex EndNote

徐至中. 温度对势垒区δ掺杂量子阱Si／Ge_（0．3）Si_（0．7）的电子能带结构的影响[J]. Chin. J. Semicond., 1996, 17(8): 561...

（100）和（111）BGaAs衬底上的In_（0．14）Ga_（0．86）As／GaAs量子阱的发光特性和光跃迁能量计算

张晓波，刘颖，杜国同，殷景志

Chin. J. Semicond. 1996, 17(8): 568-572

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 568.

张晓波，刘颖，杜国同，殷景志. （100）和（111）BGaAs衬底上的In_（0．14）Ga_（0．86）As／GaAs量子阱的发光特性和光跃迁能量计算[J]. Chin. J. Semicond., 1996, 17(8): 568..Export: BibTex EndNote

张晓波，刘颖，杜国同，殷景志. （100）和（111）BGaAs衬底上的In_（0．14）Ga_（0．86）As／GaAs量子阱的发光特性和光跃迁能量计算[J]. Chin. J. Semicond., 1996, 17(8): 568...

稀磁半导体Zn_（1－x）Mn_xSe外延薄膜与超晶格的光学特性研究

陈晞，王学忠，刘继周，陈辰嘉，王杰，凌震，王迅，王淑梅，吕少哲

Chin. J. Semicond. 1996, 17(8): 573-577

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 573.

陈晞，王学忠，刘继周，陈辰嘉，王杰，凌震，王迅，王淑梅，吕少哲. 稀磁半导体Zn_（1－x）Mn_xSe外延薄膜与超晶格的光学特性研究[J]. Chin. J. Semicond., 1996, 17(8): 573..Export: BibTex EndNote

陈晞，王学忠，刘继周，陈辰嘉，王杰，凌震，王迅，王淑梅，吕少哲. 稀磁半导体Zn_（1－x）Mn_xSe外延薄膜与超晶格的光学特性研究[J]. Chin. J. Semicond., 1996, 17(8): 573...

1．3μm直条形吸收区超辐射发光管的复折射率矢量束传播方法模拟

赵铁民，陈维友，彭宇恒，刘式墉

Chin. J. Semicond. 1996, 17(8): 578-582

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 578.

赵铁民，陈维友，彭宇恒，刘式墉. 1．3μm直条形吸收区超辐射发光管的复折射率矢量束传播方法模拟[J]. Chin. J. Semicond., 1996, 17(8): 578..Export: BibTex EndNote

赵铁民，陈维友，彭宇恒，刘式墉. 1．3μm直条形吸收区超辐射发光管的复折射率矢量束传播方法模拟[J]. Chin. J. Semicond., 1996, 17(8): 578...

GaAs、Al_xGa_（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测

王宗欣，褚幼令

Chin. J. Semicond. 1996, 17(8): 583-588

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 583.

王宗欣，褚幼令. GaAs、Al_xGa_（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测[J]. Chin. J. Semicond., 1996, 17(8): 583..Export: BibTex EndNote

王宗欣，褚幼令. GaAs、Al_xGa_（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测[J]. Chin. J. Semicond., 1996, 17(8): 583...

MBE生长面发射激光器的原位厚度监测

周增圻，潘钟，林耀望，吴荣汉，王圩

Chin. J. Semicond. 1996, 17(8): 589-594

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 589.

周增圻，潘钟，林耀望，吴荣汉，王圩. MBE生长面发射激光器的原位厚度监测[J]. Chin. J. Semicond., 1996, 17(8): 589..Export: BibTex EndNote

周增圻，潘钟，林耀望，吴荣汉，王圩. MBE生长面发射激光器的原位厚度监测[J]. Chin. J. Semicond., 1996, 17(8): 589...

一个检测半导体激光器质量的有效方法

石家纬，金恩顺，李红岩，李正庭，郭树旭，高鼎三，余金中，郭良

Chin. J. Semicond. 1996, 17(8): 595-600

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 595.

石家纬，金恩顺，李红岩，李正庭，郭树旭，高鼎三，余金中，郭良. 一个检测半导体激光器质量的有效方法[J]. Chin. J. Semicond., 1996, 17(8): 595..Export: BibTex EndNote

石家纬，金恩顺，李红岩，李正庭，郭树旭，高鼎三，余金中，郭良. 一个检测半导体激光器质量的有效方法[J]. Chin. J. Semicond., 1996, 17(8): 595...

77KFowler－Nordheim电子注入和栅氧化层俘获特性研究

刘卫东，李志坚，刘理天

Chin. J. Semicond. 1996, 17(8): 601-606

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 601.

刘卫东，李志坚，刘理天. 77KFowler－Nordheim电子注入和栅氧化层俘获特性研究[J]. Chin. J. Semicond., 1996, 17(8): 601..Export: BibTex EndNote

刘卫东，李志坚，刘理天. 77KFowler－Nordheim电子注入和栅氧化层俘获特性研究[J]. Chin. J. Semicond., 1996, 17(8): 601...

MOS结构中的两类慢界面态

高文钰，严荣良，大西一功

Chin. J. Semicond. 1996, 17(8): 607-610

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 607.

高文钰，严荣良，大西一功. MOS结构中的两类慢界面态[J]. Chin. J. Semicond., 1996, 17(8): 607..Export: BibTex EndNote

高文钰，严荣良，大西一功. MOS结构中的两类慢界面态[J]. Chin. J. Semicond., 1996, 17(8): 607...

亚表面齐纳基准二极管可靠性的1／f噪声预测方法

庄奕琪，孙青

Chin. J. Semicond. 1996, 17(8): 611-616

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 611.

庄奕琪，孙青. 亚表面齐纳基准二极管可靠性的1／f噪声预测方法[J]. Chin. J. Semicond., 1996, 17(8): 611..Export: BibTex EndNote

庄奕琪，孙青. 亚表面齐纳基准二极管可靠性的1／f噪声预测方法[J]. Chin. J. Semicond., 1996, 17(8): 611...

硅双极晶体管低温电流增益模型修正

苏九令，常旭

Chin. J. Semicond. 1996, 17(8): 617-621

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 617.

苏九令，常旭. 硅双极晶体管低温电流增益模型修正[J]. Chin. J. Semicond., 1996, 17(8): 617..Export: BibTex EndNote

苏九令，常旭. 硅双极晶体管低温电流增益模型修正[J]. Chin. J. Semicond., 1996, 17(8): 617...

衬底正偏的MOSFET的近似模型

陈萍，李志坚，刘理天

Chin. J. Semicond. 1996, 17(8): 622-627

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 622.

陈萍，李志坚，刘理天. 衬底正偏的MOSFET的近似模型[J]. Chin. J. Semicond., 1996, 17(8): 622..Export: BibTex EndNote

陈萍，李志坚，刘理天. 衬底正偏的MOSFET的近似模型[J]. Chin. J. Semicond., 1996, 17(8): 622...

新型GaAsD－MESFETDCFL单元电路

王庆康

Chin. J. Semicond. 1996, 17(8): 628-631

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 628.

王庆康. 新型GaAsD－MESFETDCFL单元电路[J]. Chin. J. Semicond., 1996, 17(8): 628..Export: BibTex EndNote

王庆康. 新型GaAsD－MESFETDCFL单元电路[J]. Chin. J. Semicond., 1996, 17(8): 628...

高压大电流晶闸管受主双质掺杂新技术的研究

刘秀喜，薛成山，林玉松，孙瑛，庄惠照

Chin. J. Semicond. 1996, 17(8): 632-636

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 632.

刘秀喜，薛成山，林玉松，孙瑛，庄惠照. 高压大电流晶闸管受主双质掺杂新技术的研究[J]. Chin. J. Semicond., 1996, 17(8): 632..Export: BibTex EndNote

刘秀喜，薛成山，林玉松，孙瑛，庄惠照. 高压大电流晶闸管受主双质掺杂新技术的研究[J]. Chin. J. Semicond., 1996, 17(8): 632...

低压MOVPE外延生长GaN膜的光致发光激发谱研究

段家，张伯蕊，秦国刚，张国义，童玉珍，金泗轩，杨志坚，姚光庆

Chin. J. Semicond. 1996, 17(8): 637-640

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1996, 17(8): 637.

段家，张伯蕊，秦国刚，张国义，童玉珍，金泗轩，杨志坚，姚光庆. 低压MOVPE外延生长GaN膜的光致发光激发谱研究[J]. Chin. J. Semicond., 1996, 17(8): 637..Export: BibTex EndNote

段家，张伯蕊，秦国刚，张国义，童玉珍，金泗轩，杨志坚，姚光庆. 低压MOVPE外延生长GaN膜的光致发光激发谱研究[J]. Chin. J. Semicond., 1996, 17(8): 637...

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