Archive

Volume 30, Issue 10, Oct 2009

• SEMICONDUCTOR PHYSICS

  Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films

  Ding Wuchang, Zuo Yuhua, Zhang Yun, Guo Jianchuan, Cheng Buwen, Yu Jinzhong, Wang Qiming, Guo Hengqun, Lü Peng, Shen Jiwei

  J. Semicond.  2009, 30(10): 102001
  doi: 10.1088/1674-4926/30/10/102001

  Observation of ferromagnetism in highly oxygen-deficient HfO2 films

  Jiang Ran, Zhang Yan

  J. Semicond.  2009, 30(10): 102002
  doi: 10.1088/1674-4926/30/10/102002

  Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

  Zhao Jianzhi, Lin Zhaojun, Corrigan T D, Zhang Yu, Li Huijun, Wang Zhanguo

  J. Semicond.  2009, 30(10): 102003
  doi: 10.1088/1674-4926/30/10/102003

• SEMICONDUCTOR MATERIALS

  High quality AlGaN grown on a high temperature AlN template by MOCVD

  Yan Jianchang, Wang Junxi, Liu Naixin, Liu Zhe, Ruan Jun, Li Jinmin

  J. Semicond.  2009, 30(10): 103001
  doi: 10.1088/1674-4926/30/10/103001

  Growth of CdS crystals by the physical vapor transport method

  Cheng Hongjuan, Xu Yongkuan, Yang Wei, Yu Xianglu, Yan Ruyue, Lai Zhanping

  J. Semicond.  2009, 30(10): 103002
  doi: 10.1088/1674-4926/30/10/103002

  Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film

  Wu Deqi, Yao Jincheng, Zhao Hongsheng, Chang Aimin, Li Feng

  J. Semicond.  2009, 30(10): 103003
  doi: 10.1088/1674-4926/30/10/103003

• SEMICONDUCTOR DEVICES

  Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs

  Zhao Shuo, Guo Lei, Wang Jing, Xu Jun, Liu Zhihong

  J. Semicond.  2009, 30(10): 104001
  doi: 10.1088/1674-4926/30/10/104001

  Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics

  Hu Aibin, Xu Qiuxia

  J. Semicond.  2009, 30(10): 104002
  doi: 10.1088/1674-4926/30/10/104002

  Improvements on high voltage performance of power static induction transistors

  Wang Yongshun, Li Hairong, Wang Ziting, Li Siyuan

  J. Semicond.  2009, 30(10): 104003
  doi: 10.1088/1674-4926/30/10/104003

  Thermal characteristics investigation of high voltage grounded gate-LDMOS under ESD stress conditions

  Sun Weifeng, Qian Qinsong, Wang Wen, Yi Yangbo

  J. Semicond.  2009, 30(10): 104004
  doi: 10.1088/1674-4926/30/10/104004

  Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS

  Qian Qinsong, Liu Siyang, Sun Weifeng, Shi Longxing

  J. Semicond.  2009, 30(10): 104005
  doi: 10.1088/1674-4926/30/10/104005

  Thermal time constant of a terminating type MEMS microwave power sensor

  Xu Yinglin, Liao Xiaoping

  J. Semicond.  2009, 30(10): 104006
  doi: 10.1088/1674-4926/30/10/104006

  Experimental analysis of an MIM capacitor with a concave shield

  Liu Lintao, Yu Mingyan, Wang Jinxiang

  J. Semicond.  2009, 30(10): 104007
  doi: 10.1088/1674-4926/30/10/104007

  Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator

  Han Zhitao, Chu Jinkui, Meng Fantao, Jin Rencheng

  J. Semicond.  2009, 30(10): 104008
  doi: 10.1088/1674-4926/30/10/104008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A novel 2.95–3.65 GHz CMOS LC-VCO using tuning curve compensation

  Xiao Shimao, Ma Chengyan, Ye Tianchun

  J. Semicond.  2009, 30(10): 105001
  doi: 10.1088/1674-4926/30/10/105001

  Effect of nucleation layer morphology on crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures

  Duan Huantao, Hao Yue, Zhang Jincheng

  J. Semicond.  2009, 30(10): 105002
  doi: 10.1088/1674-4926/30/10/105002

  An 11 mW 79 dB DR ΔΣ modulator for ADSL applications

  Zhu Yingjia, Liu Liyuan, Li Dongmei

  J. Semicond.  2009, 30(10): 105003
  doi: 10.1088/1674-4926/30/10/105003

  A dual-mode complex filter for GNSS receivers with frequency tuning

  Gan Yebing, Ma Chengyan, Yuan Guoshun

  J. Semicond.  2009, 30(10): 105004
  doi: 10.1088/1674-4926/30/10/105004

  1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

  Huang Beiju, Zhang Xu, Chen Hongda

  J. Semicond.  2009, 30(10): 105005
  doi: 10.1088/1674-4926/30/10/105005

  A direct digital frequency synthesizer with high-speed current-steering DAC

  Yu Jinshan, Fu Dongbing, Li Ruzhang, Yao Yafeng, Yan Gang, Liu Jun, Zhang Ruitao, Yu Zhou, Li Tun

  J. Semicond.  2009, 30(10): 105006
  doi: 10.1088/1674-4926/30/10/105006

  Design of a high-order single-loop Σ△ ADC followed by a decimator in 0.18 μm CMOS technology

  Li Di, Yang Yintang, Shi Lichun, Wu Xiaofeng

  J. Semicond.  2009, 30(10): 105007
  doi: 10.1088/1674-4926/30/10/105007

  A 10-bit low power SAR A/D converter based on 90 nm CMOS

  Tong Xingyuan, Yang Yintang, Zhu Zhangming, Xiao Yan, Chen Jianming

  J. Semicond.  2009, 30(10): 105008
  doi: 10.1088/1674-4926/30/10/105008

  10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier

  Fan Chao, Chen Tangsheng, Yang Lijie, Feng Ou, Jiao Shilong, Wu Yunfeng, Ye Yutang

  J. Semicond.  2009, 30(10): 105009
  doi: 10.1088/1674-4926/30/10/105009

  A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

  Yu Changliang, Mao Luhong, Xiao Xindong, Xie Sheng, Zhang Shilin

  J. Semicond.  2009, 30(10): 105010
  doi: 10.1088/1674-4926/30/10/105010

  An area-saving dual-path loop filter for low-voltage integrated phase-locked loops

  Pan Jie, Yang Haigang, Yang Liwu

  J. Semicond.  2009, 30(10): 105011
  doi: 10.1088/1674-4926/30/10/105011

  Research and design of a novel current mode charge pump

  Li Xianrui, Lai Xinquan, Li Yushan, Ye Qiang

  J. Semicond.  2009, 30(10): 105012
  doi: 10.1088/1674-4926/30/10/105012

  Design and noise analysis of a fully-differential charge pump for phase-locked loops

  Gong Zhichao, Lu Lei, Liao Youchun, Tang Zhangwen

  J. Semicond.  2009, 30(10): 105013
  doi: 10.1088/1674-4926/30/10/105013

  A multiple-pass ring oscillator based dual-loop phase-locked loop

  Chen Danfeng, Ren Junyan, Deng Jingjing, Li Wei, Li Ning

  J. Semicond.  2009, 30(10): 105014
  doi: 10.1088/1674-4926/30/10/105014

  A novel noise optimization technique for inductively degenerated CMOS LNA

  Geng Zhiqing, Wang Haiyong, Wu Nanjian

  J. Semicond.  2009, 30(10): 105015
  doi: 10.1088/1674-4926/30/10/105015

• SEMICONDUCTOR TECHNOLOGY

  Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process

  Shang Haiping, Xu Qiuxia

  J. Semicond.  2009, 30(10): 106001
  doi: 10.1088/1674-4926/30/10/106001

  Seamless-merging-oriented parallel inverse lithography technology

  Yang Yiwei, Shi Zheng, Shen Shanhu

  J. Semicond.  2009, 30(10): 106002
  doi: 10.1088/1674-4926/30/10/106002

  A wafer-level 3D packaging structure with Benzocyclobutene as a dielectric for multichip module fabrication

  Geng Fei, Ding Xiaoyun, Xu Gaowei, Luo Le

  J. Semicond.  2009, 30(10): 106003
  doi: 10.1088/1674-4926/30/10/106003

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