Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films
J. Semicond. 2009, 30(10): 102001
doi: 10.1088/1674-4926/30/10/102001
Observation of ferromagnetism in highly oxygen-deficient HfO2 films
J. Semicond. 2009, 30(10): 102002
doi: 10.1088/1674-4926/30/10/102002
J. Semicond. 2009, 30(10): 102003
doi: 10.1088/1674-4926/30/10/102003
High quality AlGaN grown on a high temperature AlN template by MOCVD
J. Semicond. 2009, 30(10): 103001
doi: 10.1088/1674-4926/30/10/103001
Growth of CdS crystals by the physical vapor transport method
J. Semicond. 2009, 30(10): 103002
doi: 10.1088/1674-4926/30/10/103002
Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film
J. Semicond. 2009, 30(10): 103003
doi: 10.1088/1674-4926/30/10/103003
Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs
J. Semicond. 2009, 30(10): 104001
doi: 10.1088/1674-4926/30/10/104001
Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics
J. Semicond. 2009, 30(10): 104002
doi: 10.1088/1674-4926/30/10/104002
Improvements on high voltage performance of power static induction transistors
J. Semicond. 2009, 30(10): 104003
doi: 10.1088/1674-4926/30/10/104003
J. Semicond. 2009, 30(10): 104004
doi: 10.1088/1674-4926/30/10/104004
Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS
J. Semicond. 2009, 30(10): 104005
doi: 10.1088/1674-4926/30/10/104005
Thermal time constant of a terminating type MEMS microwave power sensor
J. Semicond. 2009, 30(10): 104006
doi: 10.1088/1674-4926/30/10/104006
Experimental analysis of an MIM capacitor with a concave shield
J. Semicond. 2009, 30(10): 104007
doi: 10.1088/1674-4926/30/10/104007
Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator
J. Semicond. 2009, 30(10): 104008
doi: 10.1088/1674-4926/30/10/104008
A novel 2.95–3.65 GHz CMOS LC-VCO using tuning curve compensation
J. Semicond. 2009, 30(10): 105001
doi: 10.1088/1674-4926/30/10/105001
J. Semicond. 2009, 30(10): 105002
doi: 10.1088/1674-4926/30/10/105002
An 11 mW 79 dB DR ΔΣ modulator for ADSL applications
J. Semicond. 2009, 30(10): 105003
doi: 10.1088/1674-4926/30/10/105003
A dual-mode complex filter for GNSS receivers with frequency tuning
J. Semicond. 2009, 30(10): 105004
doi: 10.1088/1674-4926/30/10/105004
1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications
J. Semicond. 2009, 30(10): 105005
doi: 10.1088/1674-4926/30/10/105005
A direct digital frequency synthesizer with high-speed current-steering DAC
J. Semicond. 2009, 30(10): 105006
doi: 10.1088/1674-4926/30/10/105006
Design of a high-order single-loop Σ△ ADC followed by a decimator in 0.18 μm CMOS technology
J. Semicond. 2009, 30(10): 105007
doi: 10.1088/1674-4926/30/10/105007
A 10-bit low power SAR A/D converter based on 90 nm CMOS
J. Semicond. 2009, 30(10): 105008
doi: 10.1088/1674-4926/30/10/105008
10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier
J. Semicond. 2009, 30(10): 105009
doi: 10.1088/1674-4926/30/10/105009
J. Semicond. 2009, 30(10): 105010
doi: 10.1088/1674-4926/30/10/105010
An area-saving dual-path loop filter for low-voltage integrated phase-locked loops
J. Semicond. 2009, 30(10): 105011
doi: 10.1088/1674-4926/30/10/105011
Research and design of a novel current mode charge pump
J. Semicond. 2009, 30(10): 105012
doi: 10.1088/1674-4926/30/10/105012
Design and noise analysis of a fully-differential charge pump for phase-locked loops
J. Semicond. 2009, 30(10): 105013
doi: 10.1088/1674-4926/30/10/105013
A multiple-pass ring oscillator based dual-loop phase-locked loop
J. Semicond. 2009, 30(10): 105014
doi: 10.1088/1674-4926/30/10/105014
A novel noise optimization technique for inductively degenerated CMOS LNA
J. Semicond. 2009, 30(10): 105015
doi: 10.1088/1674-4926/30/10/105015
Adjustment of NiSi/n-Si SBH by post-silicide of dopant segregation process
J. Semicond. 2009, 30(10): 106001
doi: 10.1088/1674-4926/30/10/106001
Seamless-merging-oriented parallel inverse lithography technology
J. Semicond. 2009, 30(10): 106002
doi: 10.1088/1674-4926/30/10/106002
J. Semicond. 2009, 30(10): 106003
doi: 10.1088/1674-4926/30/10/106003