Archive

Volume 30, Issue 5, May 2009

• SEMICONDUCTOR PHYSICS

  First-principles calculation of the electronic band of ZnO doped with C

  Si Panpan, Su Xiyu, Hou Qinying, Li Yadong, Cheng Wei

  J. Semicond.  2009, 30(5): 052001
  doi: 10.1088/1674-4926/30/5/052001

  Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction

  Liu Hongxia, Zhang Heming, Zhang Zhiyong

  J. Semicond.  2009, 30(5): 052002
  doi: 10.1088/1674-4926/30/5/052002

  Downward uniformity and optical properties of porous silicon layers

  Long Yongfu, Ge Jin

  J. Semicond.  2009, 30(5): 052003
  doi: 10.1088/1674-4926/30/5/052003

  Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering

  Zhuo Shiyi, Xiong Yuying, Gu Min

  J. Semicond.  2009, 30(5): 052004
  doi: 10.1088/1674-4926/30/5/052004

• SEMICONDUCTOR MATERIALS

  Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

  Chen Huimin, Guo Fuqiang, Zhang Baohua

  J. Semicond.  2009, 30(5): 053001
  doi: 10.1088/1674-4926/30/5/053001

  Optimization of the acid leaching process by using an ultrasonic field for metallurgical grade silicon

  Zhang Jian, Li Tingju, Ma Xiaodong, Luo Dawei, Liu Ning, Liu Dehua

  J. Semicond.  2009, 30(5): 053002
  doi: 10.1088/1674-4926/30/5/053002

• SEMICONDUCTOR DEVICES

  Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs

  Pang Lei, Pu Yan, Liu Xinyu, Wang Liang, Li Chengzhan, Liu Jian, Zheng Yingkui, Wei Ke

  J. Semicond.  2009, 30(5): 054001
  doi: 10.1088/1674-4926/30/5/054001

  Development and characteristics analysis of recessed-gate MOS HEMT

  Wang Chong, Ma Xiaohua, Feng Qian, Hao Yue, Zhang Jincheng, Mao Wei

  J. Semicond.  2009, 30(5): 054002
  doi: 10.1088/1674-4926/30/5/054002

  A novel MEMS inertial sensor with enhanced sensing capacitors

  Dong Linxi, Yan Haixia, Huo Weihong, Xu Li, Li Yongjie, Sun Lingling

  J. Semicond.  2009, 30(5): 054003
  doi: 10.1088/1674-4926/30/5/054003

  A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

  Su Shi, Liao Xiaoping

  J. Semicond.  2009, 30(5): 054004
  doi: 10.1088/1674-4926/30/5/054004

  Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm

  Kang Yuzhu, Li Jianjun, Ding Liang, Yang Zhen, Han Jun, Deng Jun, Zou Deshu, Shen Guangdi

  J. Semicond.  2009, 30(5): 054005
  doi: 10.1088/1674-4926/30/5/054005

  A novel symmetrical microwave power sensor based on MEMS technology

  Wang Debo, Liao Xiaoping

  J. Semicond.  2009, 30(5): 054006
  doi: 10.1088/1674-4926/30/5/054006

  Numerical analysis of four-wave-mixing based multichannel wavelength conversion techniques in fibers

  Jia Liang, Zhang Fan, Li Ming, Liu Yuliang, Chen Zhangyuan

  J. Semicond.  2009, 30(5): 054007
  doi: 10.1088/1674-4926/30/5/054007

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Annealing behavior of radiation damage in JFET-input operational amplifiers

  Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Guo Qi, Yu Xuefeng

  J. Semicond.  2009, 30(5): 055001
  doi: 10.1088/1674-4926/30/5/055001

  Theoretical analysis and an improvement method of the bias effect on the linearity of RF linear power amplifiers

  Wu Tuo, Chen Hongyi, Qian Dahong

  J. Semicond.  2009, 30(5): 055002
  doi: 10.1088/1674-4926/30/5/055002

  Low-power wide-locking-range injection-locked frequency divider for OFDM UWB systems

  Yin Jiangwei, Li Ning, Zheng Renliang, Li Wei, Ren Junyan

  J. Semicond.  2009, 30(5): 055003
  doi: 10.1088/1674-4926/30/5/055003

  A 540-W digital pre-amplifier with 88-dB dynamic range for electret microphones

  Liu Yan, Hua Siliang, Wang Donghui, Hou Chaohuan

  J. Semicond.  2009, 30(5): 055004
  doi: 10.1088/1674-4926/30/5/055004

  Designof a 40-GHz LNA in 0.13-μm SiGe BiCMOS

  Xu Leijun, Wang Zhigong, Li Qin, Zhao Yan

  J. Semicond.  2009, 30(5): 055005
  doi: 10.1088/1674-4926/30/5/055005

  Modeling and analysis of single-event transients in charge pumps

  Zhao Zhenyu, Li Junfeng, Zhang Minxuan, Li Shaoqing

  J. Semicond.  2009, 30(5): 055006
  doi: 10.1088/1674-4926/30/5/055006

  A 20-Gb/s 1:2 demultiplexer in 0.18-μm CMOS

  Zhang Changchun, Wang Zhigong, Shi Si, Li Wei

  J. Semicond.  2009, 30(5): 055007
  doi: 10.1088/1674-4926/30/5/055007

  A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit

  Peng Yanjun, Song Jiayou, Wang Zhigong, Tsang K F

  J. Semicond.  2009, 30(5): 055008
  doi: 10.1088/1674-4926/30/5/055008

  Design of Ka-band antipodal finline mixer and detector

  Yao Changfei, Xu Jinping, Chen Mo

  J. Semicond.  2009, 30(5): 055009
  doi: 10.1088/1674-4926/30/5/055009

  A 16-bit cascaded sigma–delta pipeline A/D converter

  Li Liang, Li Ruzhang, Yu Zhou, Zhang Jiabin, Zhang Jun’an

  J. Semicond.  2009, 30(5): 055010
  doi: 10.1088/1674-4926/30/5/055010

  A 10-bit 50-MS/s sample-and-hold circuit with low distortion sampling switches

  Zhu Xubin, Ni Weining, Shi Yin

  J. Semicond.  2009, 30(5): 055011
  doi: 10.1088/1674-4926/30/5/055011

  An approach to the optical interconnect made in standard CMOS process

  Yu Changliang, Mao Luhong, Xiao Xindong, Xie Sheng, Zhang Shilin

  J. Semicond.  2009, 30(5): 055012
  doi: 10.1088/1674-4926/30/5/055012

• SEMICONDUCTOR TECHNOLOGY

  W-plug via electromigration in CMOS process

  Zhao Wenbin, Chen Haifeng, Xiao Zhiqiang, Li Leilei, Yu Zongguang

  J. Semicond.  2009, 30(5): 056001
  doi: 10.1088/1674-4926/30/5/056001

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