First-principles calculation of the electronic band of ZnO doped with C
J. Semicond. 2009, 30(5): 052001
doi: 10.1088/1674-4926/30/5/052001
Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction
J. Semicond. 2009, 30(5): 052002
doi: 10.1088/1674-4926/30/5/052002
Downward uniformity and optical properties of porous silicon layers
J. Semicond. 2009, 30(5): 052003
doi: 10.1088/1674-4926/30/5/052003
Magnetic properties of ZnO:Cu thin films prepared by RF magnetron sputtering
J. Semicond. 2009, 30(5): 052004
doi: 10.1088/1674-4926/30/5/052004
J. Semicond. 2009, 30(5): 053001
doi: 10.1088/1674-4926/30/5/053001
J. Semicond. 2009, 30(5): 053002
doi: 10.1088/1674-4926/30/5/053002
Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs
J. Semicond. 2009, 30(5): 054001
doi: 10.1088/1674-4926/30/5/054001
Development and characteristics analysis of recessed-gate MOS HEMT
J. Semicond. 2009, 30(5): 054002
doi: 10.1088/1674-4926/30/5/054002
A novel MEMS inertial sensor with enhanced sensing capacitors
J. Semicond. 2009, 30(5): 054003
doi: 10.1088/1674-4926/30/5/054003
A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology
J. Semicond. 2009, 30(5): 054004
doi: 10.1088/1674-4926/30/5/054004
Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm
J. Semicond. 2009, 30(5): 054005
doi: 10.1088/1674-4926/30/5/054005
A novel symmetrical microwave power sensor based on MEMS technology
J. Semicond. 2009, 30(5): 054006
doi: 10.1088/1674-4926/30/5/054006
Numerical analysis of four-wave-mixing based multichannel wavelength conversion techniques in fibers
J. Semicond. 2009, 30(5): 054007
doi: 10.1088/1674-4926/30/5/054007
Annealing behavior of radiation damage in JFET-input operational amplifiers
J. Semicond. 2009, 30(5): 055001
doi: 10.1088/1674-4926/30/5/055001
J. Semicond. 2009, 30(5): 055002
doi: 10.1088/1674-4926/30/5/055002
Low-power wide-locking-range injection-locked frequency divider for OFDM UWB systems
J. Semicond. 2009, 30(5): 055003
doi: 10.1088/1674-4926/30/5/055003
A 540-W digital pre-amplifier with 88-dB dynamic range for electret microphones
J. Semicond. 2009, 30(5): 055004
doi: 10.1088/1674-4926/30/5/055004
Designof a 40-GHz LNA in 0.13-μm SiGe BiCMOS
J. Semicond. 2009, 30(5): 055005
doi: 10.1088/1674-4926/30/5/055005
Modeling and analysis of single-event transients in charge pumps
J. Semicond. 2009, 30(5): 055006
doi: 10.1088/1674-4926/30/5/055006
A 20-Gb/s 1:2 demultiplexer in 0.18-μm CMOS
J. Semicond. 2009, 30(5): 055007
doi: 10.1088/1674-4926/30/5/055007
A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit
J. Semicond. 2009, 30(5): 055008
doi: 10.1088/1674-4926/30/5/055008
Design of Ka-band antipodal finline mixer and detector
J. Semicond. 2009, 30(5): 055009
doi: 10.1088/1674-4926/30/5/055009
A 16-bit cascaded sigma–delta pipeline A/D converter
J. Semicond. 2009, 30(5): 055010
doi: 10.1088/1674-4926/30/5/055010
A 10-bit 50-MS/s sample-and-hold circuit with low distortion sampling switches
J. Semicond. 2009, 30(5): 055011
doi: 10.1088/1674-4926/30/5/055011
An approach to the optical interconnect made in standard CMOS process
J. Semicond. 2009, 30(5): 055012
doi: 10.1088/1674-4926/30/5/055012
W-plug via electromigration in CMOS process
J. Semicond. 2009, 30(5): 056001
doi: 10.1088/1674-4926/30/5/056001