Archive

Volume 31, Issue 1, Jan 2010

• SEMICONDUCTOR PHYSICS

  Calculation of band edge levels of strained Si/(111)Si1-xGex

  Song Jianjun, Zhang Heming, Hu Huiyong, Dai Xianying, Xuan Rongxi

  J. Semicond.  2010, 31(1): 012001
  doi: 10.1088/1674-4926/31/1/012001

  Influence of gold particle size on melting temperature of VLS grown silicon nanowire

  Jiang Yanfeng, Zhang Yamin

  J. Semicond.  2010, 31(1): 012002
  doi: 10.1088/1674-4926/31/1/012002

  Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals

  Peng Yinsheng, Ye Xiaoling, Xu Bo, Jin Peng, Niu Jiebin, Jia Rui, Wang Zhanguo

  J. Semicond.  2010, 31(1): 012003
  doi: 10.1088/1674-4926/31/1/012003

• SEMICONDUCTOR MATERIALS

  Electronic structures of an (8, 0) boron nitride/carbon nanotube heterojunction

  Liu Hongxia, Zhang Heming, Song Jiuxu, Zhang Zhiyong

  J. Semicond.  2010, 31(1): 013001
  doi: 10.1088/1674-4926/31/1/013001

  Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique

  Li Yongfu, Tang Hengjing, Li Tao, Zhu Yaoming, Jiang Peilu, Qiao Hui, Li Xue, Gong Haimei

  J. Semicond.  2010, 31(1): 013002
  doi: 10.1088/1674-4926/31/1/013002

• SEMICONDUCTOR DEVICES

  Large signal RF power transmission characterization of InGaP HBT for RF power amplifiers

  Zhao Lixin, Jin Zhi, Liu Xinyu

  J. Semicond.  2010, 31(1): 014001
  doi: 10.1088/1674-4926/31/1/014001

  Short channel effect in deep submicron PDSOI nMOSFETs

  Bu Jianhui, Bi Jinshun, Song Limei, Han Zhengsheng

  J. Semicond.  2010, 31(1): 014002
  doi: 10.1088/1674-4926/31/1/014002

  Analysis of trigger behavior of high voltage LDMOS under TLP and VFTLP stress

  Zhu Jing, Qian Qinsong, Sun Weifeng, Liu Siyang

  J. Semicond.  2010, 31(1): 014003
  doi: 10.1088/1674-4926/31/1/014003

  Design of a high-performance PJFET for the input stage of an integrated operational amplifier

  Shui Guohua, Tang Zhaohuan, Wang Zhikuan, Ou Hongqi, Yang Yonghui, Liu Yong, Wang Xueyi

  J. Semicond.  2010, 31(1): 014004
  doi: 10.1088/1674-4926/31/1/014004

  A novel fabrication approach for an athermal arrayed-waveguide grating

  Zhou Tianhong, Ma Weidong

  J. Semicond.  2010, 31(1): 014005
  doi: 10.1088/1674-4926/31/1/014005

  Optimization of grid design for solar cells

  Liu Wen, Li Yueqiang, Chen Jianjun, Chen Yanling, Wang Xiaodong, Yang Fuhua

  J. Semicond.  2010, 31(1): 014006
  doi: 10.1088/1674-4926/31/1/014006

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 4224 MHz low jitter phase-locked loop in 0.13-μm CMOS technology

  Chen Hu, Lu Bo, Shao Ke, Xia Lingli, Huang Yumei, Hong Zhiliang

  J. Semicond.  2010, 31(1): 015001
  doi: 10.1088/1674-4926/31/1/015001

  A high performance 90 nm CMOS SAR ADC with hybrid architecture

  Tong Xingyuan, Chen Jianming, Zhu Zhangming, Yang Yintang

  J. Semicond.  2010, 31(1): 015002
  doi: 10.1088/1674-4926/31/1/015002

  An X-band four-way combined GaN solid-state power amplifier

  Chen Chi, Hao Yue, Feng Hui, Gu Wenping, Li Zhiming, Hu Shigang, Ma Teng

  J. Semicond.  2010, 31(1): 015003
  doi: 10.1088/1674-4926/31/1/015003

  A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS

  Hao Mingli, Shi Yin

  J. Semicond.  2010, 31(1): 015004
  doi: 10.1088/1674-4926/31/1/015004

  A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

  Wu Chia-Song, Chang Chien-Huang, Liu Hsing-Chung, Lin Tah-Yeong, Wu Hsien-Ming

  J. Semicond.  2010, 31(1): 015005
  doi: 10.1088/1674-4926/31/1/015005

  Full on-chip and area-efficient CMOS LDO with zero to maximum load stability using adaptive frequency compensation

  Ma Haifeng, Zhou Feng

  J. Semicond.  2010, 31(1): 015006
  doi: 10.1088/1674-4926/31/1/015006

  Study and analysis of coefficient mismatch in a MASH21 sigma–delta modulator

  Ge Binjie, Wang Xin’an, Zhang Xing, Feng Xiaoxing, Wang Qingqin

  J. Semicond.  2010, 31(1): 015007
  doi: 10.1088/1674-4926/31/1/015007

  Low-power variable frequency PFC converters

  Li Yani, Yang Yintang, Zhu Zhangming

  J. Semicond.  2010, 31(1): 015008
  doi: 10.1088/1674-4926/31/1/015008

  A high efficiency charge pump circuit for low power applications

  Feng Peng, Li Yunlong, Wu Nanjian

  J. Semicond.  2010, 31(1): 015009
  doi: 10.1088/1674-4926/31/1/015009

  A novel precision curvature-compensated bandgap reference

  Zhou Zekun, Ming Xin, Zhang Bo, Li Zhaoji

  J. Semicond.  2010, 31(1): 015010
  doi: 10.1088/1674-4926/31/1/015010

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