Calculation of band edge levels of strained Si/(111)Si1-xGex
J. Semicond. 2010, 31(1): 012001
doi: 10.1088/1674-4926/31/1/012001
Influence of gold particle size on melting temperature of VLS grown silicon nanowire
J. Semicond. 2010, 31(1): 012002
doi: 10.1088/1674-4926/31/1/012002
Electronic structures of an (8, 0) boron nitride/carbon nanotube heterojunction
J. Semicond. 2010, 31(1): 013001
doi: 10.1088/1674-4926/31/1/013001
J. Semicond. 2010, 31(1): 013002
doi: 10.1088/1674-4926/31/1/013002
Large signal RF power transmission characterization of InGaP HBT for RF power amplifiers
J. Semicond. 2010, 31(1): 014001
doi: 10.1088/1674-4926/31/1/014001
Short channel effect in deep submicron PDSOI nMOSFETs
J. Semicond. 2010, 31(1): 014002
doi: 10.1088/1674-4926/31/1/014002
Analysis of trigger behavior of high voltage LDMOS under TLP and VFTLP stress
J. Semicond. 2010, 31(1): 014003
doi: 10.1088/1674-4926/31/1/014003
Design of a high-performance PJFET for the input stage of an integrated operational amplifier
J. Semicond. 2010, 31(1): 014004
doi: 10.1088/1674-4926/31/1/014004
A novel fabrication approach for an athermal arrayed-waveguide grating
J. Semicond. 2010, 31(1): 014005
doi: 10.1088/1674-4926/31/1/014005
Optimization of grid design for solar cells
J. Semicond. 2010, 31(1): 014006
doi: 10.1088/1674-4926/31/1/014006
A 4224 MHz low jitter phase-locked loop in 0.13-μm CMOS technology
J. Semicond. 2010, 31(1): 015001
doi: 10.1088/1674-4926/31/1/015001
A high performance 90 nm CMOS SAR ADC with hybrid architecture
J. Semicond. 2010, 31(1): 015002
doi: 10.1088/1674-4926/31/1/015002
An X-band four-way combined GaN solid-state power amplifier
J. Semicond. 2010, 31(1): 015003
doi: 10.1088/1674-4926/31/1/015003
A 2.4 GHz power amplifier in 0.35 μm SiGe BiCMOS
J. Semicond. 2010, 31(1): 015004
doi: 10.1088/1674-4926/31/1/015004
J. Semicond. 2010, 31(1): 015005
doi: 10.1088/1674-4926/31/1/015005
J. Semicond. 2010, 31(1): 015006
doi: 10.1088/1674-4926/31/1/015006
Study and analysis of coefficient mismatch in a MASH21 sigma–delta modulator
J. Semicond. 2010, 31(1): 015007
doi: 10.1088/1674-4926/31/1/015007
Low-power variable frequency PFC converters
J. Semicond. 2010, 31(1): 015008
doi: 10.1088/1674-4926/31/1/015008
A high efficiency charge pump circuit for low power applications
J. Semicond. 2010, 31(1): 015009
doi: 10.1088/1674-4926/31/1/015009
A novel precision curvature-compensated bandgap reference
J. Semicond. 2010, 31(1): 015010
doi: 10.1088/1674-4926/31/1/015010