Properties of the two- and three-dimensional quantum dot qubit
J. Semicond. 2010, 31(5): 052001
doi: 10.1088/1674-4926/31/5/052001
J. Semicond. 2010, 31(5): 052002
doi: 10.1088/1674-4926/31/5/052002
Time-delayed feedback control of chaos in a GaAs/AlGaAs heterostructure
J. Semicond. 2010, 31(5): 052003
doi: 10.1088/1674-4926/31/5/052003
A simple expression for impurity distribution after multiple diffusion processes
J. Semicond. 2010, 31(5): 052004
doi: 10.1088/1674-4926/31/5/052004
Optical and structural properties of sol–gel derived nanostructured CeO2 film
J. Semicond. 2010, 31(5): 053001
doi: 10.1088/1674-4926/31/5/053001
Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite
J. Semicond. 2010, 31(5): 053002
doi: 10.1088/1674-4926/31/5/053002
AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer
J. Semicond. 2010, 31(5): 053003
doi: 10.1088/1674-4926/31/5/053003
J. Semicond. 2010, 31(5): 053004
doi: 10.1088/1674-4926/31/5/053004
Humidity sensitive organic field effect transistor
J. Semicond. 2010, 31(5): 054001
doi: 10.1088/1674-4926/31/5/054001
Ag/PEPC/NiPc/ZnO/Ag thin film capacitive and resistive humidity sensors
J. Semicond. 2010, 31(5): 054002
doi: 10.1088/1674-4926/31/5/054002
Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
J. Semicond. 2010, 31(5): 054003
doi: 10.1088/1674-4926/31/5/054003
J. Semicond. 2010, 31(5): 054004
doi: 10.1088/1674-4926/31/5/054004
Guided modes in a rectangular waveguide with semiconductor metamaterial
J. Semicond. 2010, 31(5): 054005
doi: 10.1088/1674-4926/31/5/054005
Characteristics of a novel biaxial capacitive MEMS accelerometer
J. Semicond. 2010, 31(5): 054006
doi: 10.1088/1674-4926/31/5/054006
A 2.1–6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver
J. Semicond. 2010, 31(5): 055001
doi: 10.1088/1674-4926/31/5/055001
Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis
J. Semicond. 2010, 31(5): 055002
doi: 10.1088/1674-4926/31/5/055002
A 1.1 mW 87 dB dynamic range ΔΣ modulator for audio applications
J. Semicond. 2010, 31(5): 055003
doi: 10.1088/1674-4926/31/5/055003
A 5-GHz programmable frequency divider in 0.18-μm CMOS technology
J. Semicond. 2010, 31(5): 055004
doi: 10.1088/1674-4926/31/5/055004
A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications
J. Semicond. 2010, 31(5): 055005
doi: 10.1088/1674-4926/31/5/055005
Design and noise analysis of a sigma–delta capacitive micromachined accelerometer
J. Semicond. 2010, 31(5): 055006
doi: 10.1088/1674-4926/31/5/055006
A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology
J. Semicond. 2010, 31(5): 055007
doi: 10.1088/1674-4926/31/5/055007
A low-jitter RF PLL frequency synthesizer with high-speed mixed-signal down-scaling circuits
J. Semicond. 2010, 31(5): 055008
doi: 10.1088/1674-4926/31/5/055008
A high-performance, low-power ΣΔ ADC for digital audio applications
J. Semicond. 2010, 31(5): 055009
doi: 10.1088/1674-4926/31/5/055009
A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth
J. Semicond. 2010, 31(5): 055010
doi: 10.1088/1674-4926/31/5/055010
Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies
J. Semicond. 2010, 31(5): 055011
doi: 10.1088/1674-4926/31/5/055011
A novel embedded soft-start circuit for SOC power supply
J. Semicond. 2010, 31(5): 055012
doi: 10.1088/1674-4926/31/5/055012
SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs
J. Semicond. 2010, 31(5): 056001
doi: 10.1088/1674-4926/31/5/056001
Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories
J. Semicond. 2010, 31(5): 056002
doi: 10.1088/1674-4926/31/5/056002