Archive

Volume 31, Issue 5, May 2010

• SEMICONDUCTOR PHYSICS

  Properties of the two- and three-dimensional quantum dot qubit

  Chen Shihua

  J. Semicond.  2010, 31(5): 052001
  doi: 10.1088/1674-4926/31/5/052001

  Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an electric field

  Zhang Min, Ban Shiliang

  J. Semicond.  2010, 31(5): 052002
  doi: 10.1088/1674-4926/31/5/052002

  Time-delayed feedback control of chaos in a GaAs/AlGaAs heterostructure

  Yang Gui, Zhao Xueting

  J. Semicond.  2010, 31(5): 052003
  doi: 10.1088/1674-4926/31/5/052003

  A simple expression for impurity distribution after multiple diffusion processes

  Hu Hao, Chen Xingbi

  J. Semicond.  2010, 31(5): 052004
  doi: 10.1088/1674-4926/31/5/052004

• SEMICONDUCTOR MATERIALS

  Optical and structural properties of sol–gel derived nanostructured CeO2 film

  Anees A. Ansari

  J. Semicond.  2010, 31(5): 053001
  doi: 10.1088/1674-4926/31/5/053001

  Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite

  Ma Zeyu, Wang Xiaoliang, Wang Cuimei, Xiao Hongling, Yang Cuibai

  J. Semicond.  2010, 31(5): 053002
  doi: 10.1088/1674-4926/31/5/053002

  AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer

  Gao Hanchao, Wen Cai, Wang Wenxin, Jiang Zhongwei, Tian Haitao, He Tao, Li Hui, Chen Hong

  J. Semicond.  2010, 31(5): 053003
  doi: 10.1088/1674-4926/31/5/053003

  Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering

  Wang Guanghua, Kong Jincheng, Li Xiongjun, Qiu Feng, Li Cong, Yang Lili, Kong Lingde, Ji Rongbin

  J. Semicond.  2010, 31(5): 053004
  doi: 10.1088/1674-4926/31/5/053004

• SEMICONDUCTOR DEVICES

  Humidity sensitive organic field effect transistor

  I. Murtaza, Kh S. Karimov, Zubair Ahmad, I. Qazi, M. Mahroof-Tahir, T. A. Khan, T. Amin

  J. Semicond.  2010, 31(5): 054001
  doi: 10.1088/1674-4926/31/5/054001

  Ag/PEPC/NiPc/ZnO/Ag thin film capacitive and resistive humidity sensors

  Kh. S. Karimov, Kuan Yew Cheong, M. Saleem, Imran Murtaza, M. Farooq, Ahmad Fauzi Mohd Noor

  J. Semicond.  2010, 31(5): 054002
  doi: 10.1088/1674-4926/31/5/054002

  Gate-structure optimization for high frequency power AlGaN/GaN HEMTs

  Wang Dongfang, Yuan Tingting, Wei Ke, Chen Xiaojuan, Liu Xinyu

  J. Semicond.  2010, 31(5): 054003
  doi: 10.1088/1674-4926/31/5/054003

  Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions

  Lan Bo, Guo Qi, Sun Jing, Cui Jiangwei, Li Maoshun, Chen Rui, Fei Wuxiong, Zhao Yun

  J. Semicond.  2010, 31(5): 054004
  doi: 10.1088/1674-4926/31/5/054004

  Guided modes in a rectangular waveguide with semiconductor metamaterial

  Tang Tingting, Chen Fushen, Sun Bao

  J. Semicond.  2010, 31(5): 054005
  doi: 10.1088/1674-4926/31/5/054005

  Characteristics of a novel biaxial capacitive MEMS accelerometer

  Dong Linxi, Li Yongjie, Yan Haixia, Sun Lingling

  J. Semicond.  2010, 31(5): 054006
  doi: 10.1088/1674-4926/31/5/054006

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 2.1–6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver

  Chen Lei, Ruan Ying, Ma Heliang, Lai Zongsheng

  J. Semicond.  2010, 31(5): 055001
  doi: 10.1088/1674-4926/31/5/055001

  Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis

  Li Binqiao, Sun Zhongyan, Xu Jiangtao

  J. Semicond.  2010, 31(5): 055002
  doi: 10.1088/1674-4926/31/5/055002

  A 1.1 mW 87 dB dynamic range ΔΣ modulator for audio applications

  Liu Liyuan, Chen Liangdong, Li Dongmei, Wang Zhihua, Wei Shaojun

  J. Semicond.  2010, 31(5): 055003
  doi: 10.1088/1674-4926/31/5/055003

  A 5-GHz programmable frequency divider in 0.18-μm CMOS technology

  Shu Haiyong, Li Zhiqun

  J. Semicond.  2010, 31(5): 055004
  doi: 10.1088/1674-4926/31/5/055004

  A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications

  Zhang Hao, Li Zhiqun, Wang Zhigong, Zhang Li, Li Wei

  J. Semicond.  2010, 31(5): 055005
  doi: 10.1088/1674-4926/31/5/055005

  Design and noise analysis of a sigma–delta capacitive micromachined accelerometer

  Liu Yuntao, Liu Xiaowei, Chen Weiping, Wu Qun

  J. Semicond.  2010, 31(5): 055006
  doi: 10.1088/1674-4926/31/5/055006

  A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology

  Wang Wei, Huang Beiju, Dong Zan, Guo Weilian, Chen Hongda

  J. Semicond.  2010, 31(5): 055007
  doi: 10.1088/1674-4926/31/5/055007

  A low-jitter RF PLL frequency synthesizer with high-speed mixed-signal down-scaling circuits

  Tang Lu, Wang Zhigong, Xue Hong, He Xiaohu, Xu Yong, Sun Ling

  J. Semicond.  2010, 31(5): 055008
  doi: 10.1088/1674-4926/31/5/055008

  A high-performance, low-power ΣΔ ADC for digital audio applications

  Luo Hao, Han Yan, Ray C. C. Cheung, Han Xiaoxia, Ma Shaoyu, Ying Peng, Zhu Dazhong

  J. Semicond.  2010, 31(5): 055009
  doi: 10.1088/1674-4926/31/5/055009

  A reconfigurable analog baseband circuit for WLAN, WCDMA, and Bluetooth

  Tong Tao, Chi Baoyong, Wang Ziqiang, Zhang Ying, Jiang Hanjun, Wang Zhihua

  J. Semicond.  2010, 31(5): 055010
  doi: 10.1088/1674-4926/31/5/055010

  Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies

  Zou Huanhuan, Sun Lingling, Wen Jincai, Liu Jun

  J. Semicond.  2010, 31(5): 055011
  doi: 10.1088/1674-4926/31/5/055011

  A novel embedded soft-start circuit for SOC power supply

  Guo Zhongjie, Wu Longsheng, Liu Youbao, Zhang Qian

  J. Semicond.  2010, 31(5): 055012
  doi: 10.1088/1674-4926/31/5/055012

• SEMICONDUCTOR TECHNOLOGY

  SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

  Shang Haiping, Xu Qiuxia

  J. Semicond.  2010, 31(5): 056001
  doi: 10.1088/1674-4926/31/5/056001

  Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories

  Su Jianxiu, Chen Xiqu, Du Jiaxi, Kang Renke

  J. Semicond.  2010, 31(5): 056002
  doi: 10.1088/1674-4926/31/5/056002

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