Archive

Volume 33, Issue 3, Mar 2012

• INVITED REVIEW PAPERS

  Review of terahertz semiconductor sources

  Feng Wei

  J. Semicond.  2012, 33(3): 031001
  doi: 10.1088/1674-4926/33/3/031001

• SEMICONDUCTOR PHYSICS

  Optical properties of a HfO₂/Si stack with a trace amount of nitrogen incorporation

  Li Ye, Jiang Tingting, Sun Qingqing, Wang Pengfei, Ding Shijin, Zhang Wei

  J. Semicond.  2012, 33(3): 032001
  doi: 10.1088/1674-4926/33/3/032001

• SEMICONDUCTOR MATERIALS

  Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation

  Wang Jianqiang, Gao Hua, Zhang Jian, Meng Fanying, Ye Qinghao

  J. Semicond.  2012, 33(3): 033001
  doi: 10.1088/1674-4926/33/3/033001

• SEMICONDUCTOR DEVICES

  Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach

  P. Vimala, N. B. Balamurugan

  J. Semicond.  2012, 33(3): 034001
  doi: 10.1088/1674-4926/33/3/034001

  A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors

  Sidi Ould Saad Hamady

  J. Semicond.  2012, 33(3): 034002
  doi: 10.1088/1674-4926/33/3/034002

  AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application

  Wang Chong, He Yunlong, Zheng Xuefeng, Hao Yue, Ma Xiaohua, Zhang Jincheng

  J. Semicond.  2012, 33(3): 034003
  doi: 10.1088/1674-4926/33/3/034003

  A novel high speed lateral IGBT with a self-driven second gate

  Hu Hao, Chen Xingbi

  J. Semicond.  2012, 33(3): 034004
  doi: 10.1088/1674-4926/33/3/034004

  A physical surface-potential-based drain current model for polysilicon thin-film transistors

  Li Xiyue, Deng Wanling, Huang Junkai

  J. Semicond.  2012, 33(3): 034005
  doi: 10.1088/1674-4926/33/3/034005

  Holding-voltage drift of a silicon-controlled rectifier with different film thicknesses in silicon-on-insulator technology

  Jiang Yibo, Zeng Chuanbin, Du Huan, Luo Jiajun, Han Zhengsheng

  J. Semicond.  2012, 33(3): 034006
  doi: 10.1088/1674-4926/33/3/034006

  Total dose ionizing irradiation effects on a static random access memory field programmable gate array

  Gao Bo, Yu Xuefeng, Ren Diyuan, Li Yudong, Sun Jing, Cui Jiangwei, Wang Yiyuan, Li Ming

  J. Semicond.  2012, 33(3): 034007
  doi: 10.1088/1674-4926/33/3/034007

  Fabrication of a 100% fill-factor silicon microlens array

  Yan Jianhua, Ou Wen, Ou Yi

  J. Semicond.  2012, 33(3): 034008
  doi: 10.1088/1674-4926/33/3/034008

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Low power digitally controlled oscillator designs with a novel 3-transistor XNOR gate

  Manoj Kumar, Sandeep K. Arya, Sujata Pandey

  J. Semicond.  2012, 33(3): 035001
  doi: 10.1088/1674-4926/33/3/035001

  A single-to-differential low-noise amplifier with low differential output imbalance

  Duan Lian, Huang Wei, Ma Chengyan, He Xiaofeng, Jin Yuhua, Ye Tianchun

  J. Semicond.  2012, 33(3): 035002
  doi: 10.1088/1674-4926/33/3/035002

  Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT

  Zhang Ying, Wang Zhigong, Xu Jian, Luo Yin

  J. Semicond.  2012, 33(3): 035003
  doi: 10.1088/1674-4926/33/3/035003

  A fully integrated frequency synthesizer for a dual-mode GPS and Compass receiver

  Chu Xiaojie, Lin Min, Shi Yin, Dai F F

  J. Semicond.  2012, 33(3): 035004
  doi: 10.1088/1674-4926/33/3/035004

  A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver

  Wang Riyan, Huang Jiwei, Li Zhengping, Zhang Weifeng, Zeng Longyue

  J. Semicond.  2012, 33(3): 035005
  doi: 10.1088/1674-4926/33/3/035005

  The realization of an SVGA OLED-on-silicon microdisplay driving circuit

  Zhao Bohua, Huang Ran, Ma Fei, Xie Guohua, Zhang Zhensong, Du Huan, Luo Jiajun, Zhao Yi

  J. Semicond.  2012, 33(3): 035006
  doi: 10.1088/1674-4926/33/3/035006

  A feedforward compensation design in critical conduction mode boost power factor correction for low-power low total harmonic distortion

  Li Yani, Yang Yintang, Zhu Zhangming, Qiang Wei

  J. Semicond.  2012, 33(3): 035007
  doi: 10.1088/1674-4926/33/3/035007

  Rigorous theoretical derivation of lumped models to transmission line systems

  Zhao Jixiang

  J. Semicond.  2012, 33(3): 035008
  doi: 10.1088/1674-4926/33/3/035008

  A low-power multi port register file design using a low-swing strategy

  Yan Hao, Liu Yan, Hua Siliang, Wang Donghui, Hou Chaohuan

  J. Semicond.  2012, 33(3): 035009
  doi: 10.1088/1674-4926/33/3/035009

  Robust and low power register file in 65 nm technology

  Zhang Xingxing, Li Yi, Xiong Baoyu, Han Jun, Zhang Yuejun, Dong Fangyuan, Zhang Zhang, Yu Zhiyi, Cheng Xu, Zeng Xiaoyang

  J. Semicond.  2012, 33(3): 035010
  doi: 10.1088/1674-4926/33/3/035010

• SEMICONDUCTOR TECHNOLOGY

  Metal gate etch-back planarization technology

  Meng Lingkuan, Yin Huaxiang, Chen Dapeng, Ye Tianchun

  J. Semicond.  2012, 33(3): 036001
  doi: 10.1088/1674-4926/33/3/036001

  Nickel ohmic contacts of high-concentration P-implanted 4H-SiC

  Liu Chunjuan, Liu Su, Feng Jingjing, Wu Rong

  J. Semicond.  2012, 33(3): 036002
  doi: 10.1088/1674-4926/33/3/036002

  Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA

  Zhang Youwei, Xu Dawei, Wan Li, Wang Zhongjian, Xia Chao, Cheng Xinhong, Yu Yuehui

  J. Semicond.  2012, 33(3): 036003
  doi: 10.1088/1674-4926/33/3/036003

Journal of Semiconductors © 2017 All Rights Reserved