Review of terahertz semiconductor sources
J. Semicond. 2012, 33(3): 031001
doi: 10.1088/1674-4926/33/3/031001
Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation
J. Semicond. 2012, 33(3): 032001
doi: 10.1088/1674-4926/33/3/032001
Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation
J. Semicond. 2012, 33(3): 033001
doi: 10.1088/1674-4926/33/3/033001
Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach
J. Semicond. 2012, 33(3): 034001
doi: 10.1088/1674-4926/33/3/034001
A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors
J. Semicond. 2012, 33(3): 034002
doi: 10.1088/1674-4926/33/3/034002
AlGaN/GaN HEMTs with 0.2 μm V-gate recesses for X-band application
J. Semicond. 2012, 33(3): 034003
doi: 10.1088/1674-4926/33/3/034003
A novel high speed lateral IGBT with a self-driven second gate
J. Semicond. 2012, 33(3): 034004
doi: 10.1088/1674-4926/33/3/034004
A physical surface-potential-based drain current model for polysilicon thin-film transistors
J. Semicond. 2012, 33(3): 034005
doi: 10.1088/1674-4926/33/3/034005
J. Semicond. 2012, 33(3): 034006
doi: 10.1088/1674-4926/33/3/034006
J. Semicond. 2012, 33(3): 034007
doi: 10.1088/1674-4926/33/3/034007
Fabrication of a 100% fill-factor silicon microlens array
J. Semicond. 2012, 33(3): 034008
doi: 10.1088/1674-4926/33/3/034008
Low power digitally controlled oscillator designs with a novel 3-transistor XNOR gate
J. Semicond. 2012, 33(3): 035001
doi: 10.1088/1674-4926/33/3/035001
A single-to-differential low-noise amplifier with low differential output imbalance
J. Semicond. 2012, 33(3): 035002
doi: 10.1088/1674-4926/33/3/035002
Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT
J. Semicond. 2012, 33(3): 035003
doi: 10.1088/1674-4926/33/3/035003
A fully integrated frequency synthesizer for a dual-mode GPS and Compass receiver
J. Semicond. 2012, 33(3): 035004
doi: 10.1088/1674-4926/33/3/035004
A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver
J. Semicond. 2012, 33(3): 035005
doi: 10.1088/1674-4926/33/3/035005
The realization of an SVGA OLED-on-silicon microdisplay driving circuit
J. Semicond. 2012, 33(3): 035006
doi: 10.1088/1674-4926/33/3/035006
J. Semicond. 2012, 33(3): 035007
doi: 10.1088/1674-4926/33/3/035007
Rigorous theoretical derivation of lumped models to transmission line systems
J. Semicond. 2012, 33(3): 035008
doi: 10.1088/1674-4926/33/3/035008
A low-power multi port register file design using a low-swing strategy
J. Semicond. 2012, 33(3): 035009
doi: 10.1088/1674-4926/33/3/035009
Robust and low power register file in 65 nm technology
J. Semicond. 2012, 33(3): 035010
doi: 10.1088/1674-4926/33/3/035010
Metal gate etch-back planarization technology
J. Semicond. 2012, 33(3): 036001
doi: 10.1088/1674-4926/33/3/036001
Nickel ohmic contacts of high-concentration P-implanted 4H-SiC
J. Semicond. 2012, 33(3): 036002
doi: 10.1088/1674-4926/33/3/036002
Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA
J. Semicond. 2012, 33(3): 036003
doi: 10.1088/1674-4926/33/3/036003