Archive

Volume 36, Issue 6, Jun 2015

• SEMICONDUCTOR PHYSICS

  Electrical properties of Ge:Ga near the metal-insulator transition

  M Errai, A El Kaaouachi, H El Idrissi

  J. Semicond.  2015, 36(6): 062001
  doi: 10.1088/1674-4926/36/6/062001

  Leakage of photocurrent: an alternative view on I-V curves of solar cells

  Taofei Zhou, Kanglin Xiong, Min Zhang, Lei Liu, Feifei Tian, Zhiqiang Zhang, Hong Gu, Jun Huang, Jianfeng Wang, Jianrong Dong, Ke Xu

  J. Semicond.  2015, 36(6): 062002
  doi: 10.1088/1674-4926/36/6/062002

• SEMICONDUCTOR MATERIALS

  Sub-stoichiometric functionally graded titania fibres for water-splitting applications

  Vaia Adamaki, A. Sergejevs, C. Clarke, F. Clemens, F. Marken, C. R. Bowen

  J. Semicond.  2015, 36(6): 063001
  doi: 10.1088/1674-4926/36/6/063001

  Crystallization kinetics of Sn₄₀Se₆₀ thin films for phase change memory applications

  Joshua M. Kundu, Patrick M. Karimi, Walter K. Njoroge

  J. Semicond.  2015, 36(6): 063002
  doi: 10.1088/1674-4926/36/6/063002

  Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

  Danmei Zhao, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Pin Chen, Wei Liu, Xiang Li, Ming Shi

  J. Semicond.  2015, 36(6): 063003
  doi: 10.1088/1674-4926/36/6/063003

  Effects of a carbon implant on thermal stability of Ni_0.95(Pt_0.05)Si

  Shuai Feng, Lichuan Zhao, Qingzhu Zhang, Pengpeng Yang, Zhaoyun Tang, Jiang Yan, Cinan Wu

  J. Semicond.  2015, 36(6): 063004
  doi: 10.1088/1674-4926/36/6/063004

  β-FeSi₂ films prepared on 6H-SiC substrates by magnetron sputtering

  Hong Li, Hongbin Pu, Chunlei Zheng, Zhiming Chen

  J. Semicond.  2015, 36(6): 063005
  doi: 10.1088/1674-4926/36/6/063005

• SEMICONDUCTOR DEVICES

  Synthesis and electroluminescence properties of tris-[5-choloro-8-hydroxyquinoline] aluminum Al(5-Clq)₃

  Rahul Kumar, Parag Bhargava, Ritu Srivastava, Priyanka Tyagi

  J. Semicond.  2015, 36(6): 064001
  doi: 10.1088/1674-4926/36/6/064001

  Heterojunction DDR THz IMPATT diodes based on Al_xGa_1-xN/GaN material system

  Suranjana Banerjee, Monojit Mitra

  J. Semicond.  2015, 36(6): 064002
  doi: 10.1088/1674-4926/36/6/064002

  Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transistor

  S. Theodore Chandra, N. B. Balamurugan, M. Bhuvaneswari, N. Anbuselvan, N. Mohankumar

  J. Semicond.  2015, 36(6): 064003
  doi: 10.1088/1674-4926/36/6/064003

  Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

  K. Kacha, F. Djeffal, H. Ferhati, D. Arar, M. Meguellati

  J. Semicond.  2015, 36(6): 064004
  doi: 10.1088/1674-4926/36/6/064004

  Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

  Moumita Mukherjee, P. R. Tripathy, S. P. Pati

  J. Semicond.  2015, 36(6): 064005
  doi: 10.1088/1674-4926/36/6/064005

  Comparison of on-wafer calibrations for THz InP-based PHEMTs applications

  Zhiming Wang, Hui Huang, Zhifu Hu, Zhuobin Zhao, Xudong Wang, Xiaobin Luo, Jun Liu, Songyuan Yang

  J. Semicond.  2015, 36(6): 064006
  doi: 10.1088/1674-4926/36/6/064006

  Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates

  Qifeng Zhao, Yiqi Zhuang, Junlin Bao, Wei Hu

  J. Semicond.  2015, 36(6): 064007
  doi: 10.1088/1674-4926/36/6/064007

  Estimation of the optical loss in bent-waveguide superluminescent diodes by an analytical method

  Qi An, Peng Jin, Zhanguo Wang

  J. Semicond.  2015, 36(6): 064008
  doi: 10.1088/1674-4926/36/6/064008

  Micro packaged MEMS pressure sensor for intracranial pressure measurement

  Xiong Liu, Yan Yao, Jiahao Ma, Yanhang Zhang, Qian Wang, Zhaohua Zhang, Tianling Ren

  J. Semicond.  2015, 36(6): 064009
  doi: 10.1088/1674-4926/36/6/064009

  Characteristics of HfO₂/Hf-based bipolar resistive memories

  Jinshun Bi, Zhengsheng Han

  J. Semicond.  2015, 36(6): 064010
  doi: 10.1088/1674-4926/36/6/064010

  Thermal simulation of flexible LED package enhanced with copper pillars

  Yang Liu, Guoqi Zhang, Fenglian Sun

  J. Semicond.  2015, 36(6): 064011
  doi: 10.1088/1674-4926/36/6/064011

  Direct-bonded four-junction GaAs solar cells

  Jingman Shen, Lijie Sun, Kaijian Chen, Wei Zhang, Xunchun Wang

  J. Semicond.  2015, 36(6): 064012
  doi: 10.1088/1674-4926/36/6/064012

  Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

  Xiangming Xu, Jingfeng Huang, Han Yu, Wensheng Qian, Zhengliang Zhou, Bo Han, Yong Wang, Pengfei Wang, Zhang Wei

  J. Semicond.  2015, 36(6): 064013
  doi: 10.1088/1674-4926/36/6/064013

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV

  Tanu Goyal, Manoj Kumar Majumder, Brajesh Kumar Kaushik

  J. Semicond.  2015, 36(6): 065001
  doi: 10.1088/1674-4926/36/6/065001

  Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes

  Changfei Yao, Ming Zhou, Yunsheng Luo, Conghai Xu

  J. Semicond.  2015, 36(6): 065002
  doi: 10.1088/1674-4926/36/6/065002

  A novel dual-feed low-dropout regulator

  Zhikui Duan, Jianguo Hu, Yi Ding, Chong Lu, Yanyu Ding, Deming Wang, Hongzhou Tan

  J. Semicond.  2015, 36(6): 065003
  doi: 10.1088/1674-4926/36/6/065003

  A high linearity X-band SOI CMOS digitally-controlled phase shifter

  Liang Chen, Xinyu Chen, Youtao Zhang, Zhiqun Li, Lei Yang

  J. Semicond.  2015, 36(6): 065004
  doi: 10.1088/1674-4926/36/6/065004

  A low-power CMOS WIA-PA transceiver with a high sensitivity GFSK demodulator

  Tao Yang, Yu Jiang, Shengyou Liu, Guiliang Guo, Yuepeng Yan

  J. Semicond.  2015, 36(6): 065005
  doi: 10.1088/1674-4926/36/6/065005

  A high speed direct digital frequency synthesizer based on multi-channel structure

  Ling Yuan, Qiang Zhang, Yin Shi

  J. Semicond.  2015, 36(6): 065006
  doi: 10.1088/1674-4926/36/6/065006

  A 320 mV, 6 kb subthreshold 10T SRAM employing voltage lowering techniques

  Jiangzheng Cai, Suming Zhang, Jia Yuan, Xinchao Shang, Liming Chen, Yong Hei

  J. Semicond.  2015, 36(6): 065007
  doi: 10.1088/1674-4926/36/6/065007

  14-bit 100 MS/s 121 mW pipelined ADC

  Yongzhen Chen, Chixiao Chen, Zemin Feng, Fan Ye, Junyan Ren

  J. Semicond.  2015, 36(6): 065008
  doi: 10.1088/1674-4926/36/6/065008

  A fully integrated CMOS VCXO-IC with low phase noise, wide tuning range and high tuning linearity

  Yanjun Yang, Yun Zeng

  J. Semicond.  2015, 36(6): 065009
  doi: 10.1088/1674-4926/36/6/065009

  A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology

  Jincan Zhang, Yuming Zhang, Hongliang Lü, Yimen Zhang, Bo Liu, Leiming Zhang, Fei Xiang

  J. Semicond.  2015, 36(6): 065010
  doi: 10.1088/1674-4926/36/6/065010

• SEMICONDUCTOR TECHNOLOGY

  Benzotriazole removal on post-Cu CMP cleaning

  Jiying Tang, Yuling Liu, Ming Sun, Shiyan Fan, Yan Li

  J. Semicond.  2015, 36(6): 066001
  doi: 10.1088/1674-4926/36/6/066001

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