Electrical properties of Ge:Ga near the metal-insulator transition
J. Semicond. 2015, 36(6): 062001
doi: 10.1088/1674-4926/36/6/062001
Leakage of photocurrent: an alternative view on I-V curves of solar cells
J. Semicond. 2015, 36(6): 062002
doi: 10.1088/1674-4926/36/6/062002
Sub-stoichiometric functionally graded titania fibres for water-splitting applications
J. Semicond. 2015, 36(6): 063001
doi: 10.1088/1674-4926/36/6/063001
Crystallization kinetics of Sn40Se60 thin films for phase change memory applications
J. Semicond. 2015, 36(6): 063002
doi: 10.1088/1674-4926/36/6/063002
Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon
J. Semicond. 2015, 36(6): 063003
doi: 10.1088/1674-4926/36/6/063003
Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si
J. Semicond. 2015, 36(6): 063004
doi: 10.1088/1674-4926/36/6/063004
β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering
J. Semicond. 2015, 36(6): 063005
doi: 10.1088/1674-4926/36/6/063005
J. Semicond. 2015, 36(6): 064001
doi: 10.1088/1674-4926/36/6/064001
Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system
J. Semicond. 2015, 36(6): 064002
doi: 10.1088/1674-4926/36/6/064002
J. Semicond. 2015, 36(6): 064003
doi: 10.1088/1674-4926/36/6/064003
J. Semicond. 2015, 36(6): 064004
doi: 10.1088/1674-4926/36/6/064004
J. Semicond. 2015, 36(6): 064005
doi: 10.1088/1674-4926/36/6/064005
Comparison of on-wafer calibrations for THz InP-based PHEMTs applications
J. Semicond. 2015, 36(6): 064006
doi: 10.1088/1674-4926/36/6/064006
J. Semicond. 2015, 36(6): 064007
doi: 10.1088/1674-4926/36/6/064007
Estimation of the optical loss in bent-waveguide superluminescent diodes by an analytical method
J. Semicond. 2015, 36(6): 064008
doi: 10.1088/1674-4926/36/6/064008
Micro packaged MEMS pressure sensor for intracranial pressure measurement
J. Semicond. 2015, 36(6): 064009
doi: 10.1088/1674-4926/36/6/064009
Characteristics of HfO2/Hf-based bipolar resistive memories
J. Semicond. 2015, 36(6): 064010
doi: 10.1088/1674-4926/36/6/064010
Thermal simulation of flexible LED package enhanced with copper pillars
J. Semicond. 2015, 36(6): 064011
doi: 10.1088/1674-4926/36/6/064011
Direct-bonded four-junction GaAs solar cells
J. Semicond. 2015, 36(6): 064012
doi: 10.1088/1674-4926/36/6/064012
J. Semicond. 2015, 36(6): 064013
doi: 10.1088/1674-4926/36/6/064013
J. Semicond. 2015, 36(6): 065001
doi: 10.1088/1674-4926/36/6/065001
Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes
J. Semicond. 2015, 36(6): 065002
doi: 10.1088/1674-4926/36/6/065002
A novel dual-feed low-dropout regulator
J. Semicond. 2015, 36(6): 065003
doi: 10.1088/1674-4926/36/6/065003
A high linearity X-band SOI CMOS digitally-controlled phase shifter
J. Semicond. 2015, 36(6): 065004
doi: 10.1088/1674-4926/36/6/065004
A low-power CMOS WIA-PA transceiver with a high sensitivity GFSK demodulator
J. Semicond. 2015, 36(6): 065005
doi: 10.1088/1674-4926/36/6/065005
A high speed direct digital frequency synthesizer based on multi-channel structure
J. Semicond. 2015, 36(6): 065006
doi: 10.1088/1674-4926/36/6/065006
A 320 mV, 6 kb subthreshold 10T SRAM employing voltage lowering techniques
J. Semicond. 2015, 36(6): 065007
doi: 10.1088/1674-4926/36/6/065007
14-bit 100 MS/s 121 mW pipelined ADC
J. Semicond. 2015, 36(6): 065008
doi: 10.1088/1674-4926/36/6/065008
A fully integrated CMOS VCXO-IC with low phase noise, wide tuning range and high tuning linearity
J. Semicond. 2015, 36(6): 065009
doi: 10.1088/1674-4926/36/6/065009
A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology
J. Semicond. 2015, 36(6): 065010
doi: 10.1088/1674-4926/36/6/065010
Benzotriazole removal on post-Cu CMP cleaning
J. Semicond. 2015, 36(6): 066001
doi: 10.1088/1674-4926/36/6/066001