Archive

Volume 42, Issue 1, Jan 2021

• Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory andNeuromorphic Computing

• RESEARCH HIGHLIGHTS

  Ion migration in perovskite solar cells

  Xiaoxue Ren, Lixiu Zhang, Yongbo Yuan, Liming Ding

  J. Semicond.  2021, 42(1): 010201
  doi: 10.1088/1674-4926/42/1/010201

• COMMENTS AND OPINIONS

  Embracing the era of neuromorphic computing

  Yanghao Wang, Yuchao Yang, Yue Hao, Ru Huang

  J. Semicond.  2021, 42(1): 010301
  doi: 10.1088/1674-4926/42/1/010301

  A pioneer in magnetic semiconductors — Professor Stephan von Molnár

  Jianhua Zhao, Yongqing Li, Peng Xiong

  J. Semicond.  2021, 42(1): 010302
  doi: 10.1088/1674-4926/42/1/010302

• SHORT COMMUNICATION

  A chlorinated copolymer donor demonstrates a 18.13% power conversion efficiency

  Jianqiang Qin, Lixiu Zhang, Chuantian Zuo, Zuo Xiao, Yongbo Yuan, Shangfeng Yang, Feng Hao, Ming Cheng, Kuan Sun, Qinye Bao, Zhengyang Bin, Zhiwen Jin, Liming Ding

  J. Semicond.  2021, 42(1): 010501
  doi: 10.1088/1674-4926/42/1/010501

  D18, an eximious solar polymer!

  Ke Jin, Zuo Xiao, Liming Ding

  J. Semicond.  2021, 42(1): 010502
  doi: 10.1088/1674-4926/42/1/010502

• EDITORIAL

  Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

  Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li

  J. Semicond.  2021, 42(1): 010101
  doi: 10.1088/1674-4926/42/1/010101

• REVIEWS

  Towards engineering in memristors for emerging memory and neuromorphic computing: A review

  Andrey S. Sokolov, Haider Abbas, Yawar Abbas, Changhwan Choi

  J. Semicond.  2021, 42(1): 013101
  doi: 10.1088/1674-4926/42/1/013101

  A revew of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

  Xin Yang, Chen Luo, Xiyue Tian, Fang Liang, Yin Xia, Xinqian Chen, Chaolun Wang, Steve Xin Liang, Xing Wu, Junhao Chu

  J. Semicond.  2021, 42(1): 013102
  doi: 10.1088/1674-4926/42/1/013102

  Electrolyte-gated transistors for neuromorphic applications

  Heyi Huang, Chen Ge, Zhuohui Liu, Hai Zhong, Erjia Guo, Meng He, Can Wang, Guozhen Yang, Kuijuan Jin

  J. Semicond.  2021, 42(1): 013103
  doi: 10.1088/1674-4926/42/1/013103

  Multiply accumulate operations in memristor crossbar arrays for analog computing

  Jia Chen, Jiancong Li, Yi Li, Xiangshui Miao

  J. Semicond.  2021, 42(1): 013104
  doi: 10.1088/1674-4926/42/1/013104

  Neuromorphic vision sensors: Principle, progress and perspectives

  Fuyou Liao, Feichi Zhou, Yang Chai

  J. Semicond.  2021, 42(1): 013105
  doi: 10.1088/1674-4926/42/1/013105

• ARTICLES

  Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors

  Chenrong Gong, Lin Chen, Weihua Liu, Guohe Zhang

  J. Semicond.  2021, 42(1): 014101
  doi: 10.1088/1674-4926/42/1/014101

  Voltage-dependent plasticity and image Boolean operations realized in a WO _x-based memristive synapse

  Jiajuan Shi, Ya Lin, Tao Zeng, Zhongqiang Wang, Xiaoning Zhao, Haiyang Xu, Yichun Liu

  J. Semicond.  2021, 42(1): 014102
  doi: 10.1088/1674-4926/42/1/014102

  Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices

  Ye Tao, Xuhong Li, Zhongqiang Wang, Gang Li, Haiyang Xu, Xiaoning Zhao, Ya Lin, Yichun Liu

  J. Semicond.  2021, 42(1): 014103
  doi: 10.1088/1674-4926/42/1/014103

Journal of Semiconductors © 2017 All Rights Reserved