Chin. J. Semicond. 1989, 10(2): 81
MBE[(AI_xGa_(1-x)As)_l(GaAs)_m_n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究
Chin. J. Semicond. 1989, 10(2): 86
Chin. J. Semicond. 1989, 10(2): 93
GaAs/P型Al_xGa_(1-x)As异质结界面二维空穴的量子输运特性
Chin. J. Semicond. 1989, 10(2): 100
Chin. J. Semicond. 1989, 10(2): 108
Chin. J. Semicond. 1989, 10(2): 117
Chin. J. Semicond. 1989, 10(2): 124
Chin. J. Semicond. 1989, 10(2): 132
Chin. J. Semicond. 1989, 10(2): 141
1.5μm InGaAsP/InP P型衬底隐埋新月型(PBC)结构激光器
Chin. J. Semicond. 1989, 10(2): 143
Chin. J. Semicond. 1989, 10(2): 146
Chin. J. Semicond. 1989, 10(2): 148
与InP晶格相匹配的Ga_xIn_(1-x)P_yAs_(1-y)半导体的光学常数计算
Chin. J. Semicond. 1989, 10(2): 153
Chin. J. Semicond. 1989, 10(2): 158