用STM研究HF,O_2和H_2O混合气体对Si(100)表面的作用
Chin. J. Semicond. 1997, 18(2): 81
优化生长的In_xGa_(1-x)As缓冲层上双势垒In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-z)As多量子阱应变状态测量
Chin. J. Semicond. 1997, 18(2): 85
Chin. J. Semicond. 1997, 18(2): 91
Chin. J. Semicond. 1997, 18(2): 97
Triode PECVD氢稀释制备的nc-Si:H薄膜的新结果
Chin. J. Semicond. 1997, 18(2): 103
808nm GaAs/AlGaAs大功率半导体激光器波长的影响因素及控制
Chin. J. Semicond. 1997, 18(2): 108
Chin. J. Semicond. 1997, 18(2): 113
Chin. J. Semicond. 1997, 18(2): 118
Chin. J. Semicond. 1997, 18(2): 124
Chin. J. Semicond. 1997, 18(2): 128
Chin. J. Semicond. 1997, 18(2): 134
Chin. J. Semicond. 1997, 18(2): 140
Chin. J. Semicond. 1997, 18(2): 146
退火处理对透明导电CdIn_2O_4薄膜光学、电学性质及其能带结构的影响
Chin. J. Semicond. 1997, 18(2): 151
Chin. J. Semicond. 1997, 18(2): 156