Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers
Chin. J. Semicond. 2005, 26(12): 2267
One Method for Fast Gate Oxide TDDB Lifetime Prediction
Chin. J. Semicond. 2005, 26(12): 2271
Simulation of a Monolithic Integrated CMOS Preamplifier for Neural Recordings
Chin. J. Semicond. 2005, 26(12): 2275
Monolithic Integration of InGaP/AlGaAs/InGaAs Enhancement/Depletion-Mode PHEMTs
Chin. J. Semicond. 2005, 26(12): 2281
Chin. J. Semicond. 2005, 26(12): 2286
A New Process for Improving Performance of VCSELs
Chin. J. Semicond. 2005, 26(12): 2290
A New Process for Improving Performance of VCSELs
Chin. J. Semicond. 2005, 26(12): 2294
Growth and Characterisation of InAsSb Ternary Layers on (101) GaSb Substrates by LP-MOCVD
Chin. J. Semicond. 2005, 26(12): 2298
An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs
Chin. J. Semicond. 2005, 26(12): 2303
A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs
Chin. J. Semicond. 2005, 26(12): 2309
Effect of DBR Geometry on Reflectivity and Spectral Linewidth of DBR Lasers
Chin. J. Semicond. 2005, 26(12): 2315
Design and Realization of CPW Circuits Using EC-ANN Models for CPW Discontinuities
Chin. J. Semicond. 2005, 26(12): 2320
Effects of Cu-Wire Surface Fluctuations on Early Failures
Chin. J. Semicond. 2005, 26(12): 2330
An Incremental Algorithm for Non-Slicing Floorplan Based on Corner Block List Representation
Chin. J. Semicond. 2005, 26(12): 2335
A Broyden Method for Self-Consistent Solution of Schrdinger and Poisson Equations
Chin. J. Semicond. 2005, 26(12): 2344
Chin. J. Semicond. 2005, 26(12): 2350
Influences of Differently Shaped Quantum Dots on Elastic Strain Field Distributions
Chin. J. Semicond. 2005, 26(12): 2355
Chin. J. Semicond. 2005, 26(12): 2363
Influence of Substrate Temperature on Preparation of c-BN Thin Films with Wide Energy Gap
Chin. J. Semicond. 2005, 26(12): 2369
Electric Dipole Moment of Graded Spherical Semiconductor Quantum Dots Embedded in Glass
Chin. J. Semicond. 2005, 26(12): 2374
Growth of GaN on γ-Al2O3/Si(001) Composite Substrates
Chin. J. Semicond. 2005, 26(12): 2378
Growth of (111) Textured 3C-SiC on Si (111) by Low Energy Ion Beam Deposition
Chin. J. Semicond. 2005, 26(12): 2385
Magnetic and Structural Properties of Room-Temperature Ferromagnetic Al2O3∶Mn
Chin. J. Semicond. 2005, 26(12): 2390
Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs
Chin. J. Semicond. 2005, 26(12): 2396
A CMOS Wideband Variable Gain Amplifier
Chin. J. Semicond. 2005, 26(12): 2401
Measurements of Optical Characterization for CMOS
Chin. J. Semicond. 2005, 26(12): 2407
Characteristics of I sub,max Stress in 90nm-Technology nMOSFETs
Chin. J. Semicond. 2005, 26(12): 2411
Fabrication and Simulation of NDRHBT
Chin. J. Semicond. 2005, 26(12): 2416
Chin. J. Semicond. 2005, 26(12): 2422
Degradation in Flash Memory Under Low Electric Field Stress
Chin. J. Semicond. 2005, 26(12): 2428
Design of a Chaotic Random Number Generator
Chin. J. Semicond. 2005, 26(12): 2433
Influence of Contact Effects on Properties of a Small Thermoelectric Power Generator
Chin. J. Semicond. 2005, 26(12): 2440
Designs and Analysis of Series Capacitive RF-MEMS Switches
Chin. J. Semicond. 2005, 26(12): 2445
Design of SCH Structure for High-Power Broad Area 808nm GaAsP/AlGaAs Quantum-Well Lasers
Chin. J. Semicond. 2005, 26(12): 2449
A GaAs PHEMT Laser/Modulator Driver for 24 Gb/s Optical Transmitters
Chin. J. Semicond. 2005, 26(12): 2455