Archive

Volume 26, Issue 12, Dec 2005

• LETTERS

  Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers

  Lu Xiuzhen, Liu Fengqi, Liu Junqi, Jin Peng, Wang Zhanguo

  Chin. J. Semicond.  2005, 26(12): 2267
  

  One Method for Fast Gate Oxide TDDB Lifetime Prediction

  Zhao Yi, Wan Xinggong, Xu Xiangming

  Chin. J. Semicond.  2005, 26(12): 2271
  

  Simulation of a Monolithic Integrated CMOS Preamplifier for Neural Recordings

  Sui Xiaohong, Liu Jinbin, Gu Ming, Pei Weihua, Chen Hongda

  Chin. J. Semicond.  2005, 26(12): 2275
  

  Monolithic Integration of InGaP/AlGaAs/InGaAs Enhancement/Depletion-Mode PHEMTs

  Li Haiou, Zhang Haiying, Yin Junjian, Ye Tianchun

  Chin. J. Semicond.  2005, 26(12): 2281
  

  A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region

  Lu Shengli, Sun Zhilin, Sun Weifeng, Shi Longxing

  Chin. J. Semicond.  2005, 26(12): 2286
  

  A New Process for Improving Performance of VCSELs

  Hao Yongqin, Zhong Jingchang, Xie Haorui, Jiang Xiaoguang, Zhao Yingjie, Wang Lijun

  Chin. J. Semicond.  2005, 26(12): 2290
  

• PAPERS

  A New Process for Improving Performance of VCSELs

  Ren Bingyan, Gou Xianfang, Ma Lifen, Li Xudong, Xu Ying, Wang Wenjing

  Chin. J. Semicond.  2005, 26(12): 2294
  

  Growth and Characterisation of InAsSb Ternary Layers on (101) GaSb Substrates by LP-MOCVD

  Li Xiaoting, Wang Tao, Wang Jingwei, Wang Yiding, Yin Jingzhi, Sai Xiaofeng, Gao Hongkai, Zhang Zhiyong

  Chin. J. Semicond.  2005, 26(12): 2298
  

  An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs

  Li Ruizhen, Han Zhengsheng

  Chin. J. Semicond.  2005, 26(12): 2303
  

  A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

  Ding Ying, Wang Wei, Kan Qiang, Wang Baojun, Zhou Fan

  Chin. J. Semicond.  2005, 26(12): 2309
  

  Effect of DBR Geometry on Reflectivity and Spectral Linewidth of DBR Lasers

  Fang Dawei, Zhang Yi, Li Chenxia, Manzaneda C, Li Bo

  Chin. J. Semicond.  2005, 26(12): 2315
  

  Design and Realization of CPW Circuits Using EC-ANN Models for CPW Discontinuities

  Hu jiang, Sun Lingling

  Chin. J. Semicond.  2005, 26(12): 2320
  

  Effects of Cu-Wire Surface Fluctuations on Early Failures

  Wang Hui, Zhu Jianjun, Wang Guohong, Bruynseraede C, Maex K

  Chin. J. Semicond.  2005, 26(12): 2330
  

  An Incremental Algorithm for Non-Slicing Floorplan Based on Corner Block List Representation

  Yang Liu, Ma Yuchun, Hong Xianlong, Dong Sheqin, Zhou Qiang

  Chin. J. Semicond.  2005, 26(12): 2335
  

  A Broyden Method for Self-Consistent Solution of Schrdinger and Poisson Equations

  Sun Lin, Yang Wenwei, Xiang Cailan, Yu Zhiping, Tian Lilin

  Chin. J. Semicond.  2005, 26(12): 2344
  

  Influence of Interaction Between Phonons on Properties of Magnetopolarons in Semiconductor Quantum Dots

  Zhang Peng, Xiao Jinglin

  Chin. J. Semicond.  2005, 26(12): 2350
  

  Influences of Differently Shaped Quantum Dots on Elastic Strain Field Distributions

  Liu Yumin, Yu Zhongyuan, Yang Hongbo, Huang Yongzhen

  Chin. J. Semicond.  2005, 26(12): 2355
  

  ZnO Thin Film Growth by Metal Organic Chemical Vapor Deposition and Its Back Contact Application in Solar Cells

  Chen Xinliang, Xu Buheng, Xue Junming, Zhao Ying, Zhang Xiaodan, Geng Xinhua

  Chin. J. Semicond.  2005, 26(12): 2363
  

  Influence of Substrate Temperature on Preparation of c-BN Thin Films with Wide Energy Gap

  Chen Hao, Deng Jinxiang, Chen Guanghua, Liu Junkai, Tian Ling

  Chin. J. Semicond.  2005, 26(12): 2369
  

  Electric Dipole Moment of Graded Spherical Semiconductor Quantum Dots Embedded in Glass

  Tian Qiang, Liu Huimin, Fan Jieping, Yang Yonggang

  Chin. J. Semicond.  2005, 26(12): 2374
  

  Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

  Liu Zhe, Wang Junxi, Li Jinmin, Liu Hongxin, Wang Qiyuan, Wang Jun, Zhang Nanhong, Xiao Hongling, Wang Xiaoliang, Zeng Yiping

  Chin. J. Semicond.  2005, 26(12): 2378
  

  Growth of (111) Textured 3C-SiC on Si (111) by Low Energy Ion Beam Deposition

  Yang Fei, Chen Nuofu, Zhang Xingwang, Yang Shaoyan, Liu Zhikai, Chai Chunlin, Hou Zhezhe, Ma Hui, Yin Zhigang

  Chin. J. Semicond.  2005, 26(12): 2385
  

  Magnetic and Structural Properties of Room-Temperature Ferromagnetic Al₂O₃∶Mn

  Zhang Fuqiang, Chen Nuofu, Yang Ruixia, Wei Huaipeng, Liu Xianglin, Liu Zhikai, Yang Shaoyan, Chai Chunlin

  Chin. J. Semicond.  2005, 26(12): 2390
  

  Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs

  Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, Feng Qian, Li Peixian

  Chin. J. Semicond.  2005, 26(12): 2396
  

  A CMOS Wideband Variable Gain Amplifier

  Wang Ziqiang, Chi Baoyong, Wang Zhihua

  Chin. J. Semicond.  2005, 26(12): 2401
  

  Measurements of Optical Characterization for CMOS

  Song Min, Zheng Yaru, Lu Yongjun, Qu Yanling, Song Limin

  Chin. J. Semicond.  2005, 26(12): 2407
  

  Characteristics of I sub,max Stress in 90nm-Technology nMOSFETs

  Chen Haifeng, Ma Xiaohua, Hao Yue, Cao Yanrong, Huang Jianfang, Wang Wenbo, Li Kang

  Chin. J. Semicond.  2005, 26(12): 2411
  

  Fabrication and Simulation of NDRHBT

  Li Jianheng, Zhang Shilin, Guo Weilian, Qi Haitao, Liang Huilai, Mao Luhong

  Chin. J. Semicond.  2005, 26(12): 2416
  

  Pressure Effect on Electronic Mobility in Quasi-Two-Dimensional Al_xGa_1-xAs/GaAs Heterojunction Systems

  Bai Xianping, Ban Shiliang

  Chin. J. Semicond.  2005, 26(12): 2422
  

  Degradation in Flash Memory Under Low Electric Field Stress

  Zheng Xuefeng, Hao Yue, Liu Hongxia, Ma Xiaohua

  Chin. J. Semicond.  2005, 26(12): 2428
  

  Design of a Chaotic Random Number Generator

  Wang Yunfeng, Shen Haibin, Yan Xiaolang

  Chin. J. Semicond.  2005, 26(12): 2433
  

  Influence of Contact Effects on Properties of a Small Thermoelectric Power Generator

  Li Maode, Qu Jian, Li Yudong, Li Weijiang

  Chin. J. Semicond.  2005, 26(12): 2440
  

  Designs and Analysis of Series Capacitive RF-MEMS Switches

  Sun Jianhai, Cui Dafu

  Chin. J. Semicond.  2005, 26(12): 2445
  

  Design of SCH Structure for High-Power Broad Area 808nm GaAsP/AlGaAs Quantum-Well Lasers

  Wang Jun, Ma Xiaoyu, Lin Tao, Zheng Kai, Feng Xiaoming

  Chin. J. Semicond.  2005, 26(12): 2449
  

  A GaAs PHEMT Laser/Modulator Driver for 24 Gb/s Optical Transmitters

  Li Wenyuan, Wang Zhigong

  Chin. J. Semicond.  2005, 26(12): 2455
  

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