MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs
Chin. J. Semicond. 2006, 27(3): 381
BSIM Model Research and Recent Progress
Chin. J. Semicond. 2006, 27(3): 388
Chin. J. Semicond. 2006, 27(3): 397
Chin. J. Semicond. 2006, 27(3): 403
Chin. J. Semicond. 2006, 27(3): 413
Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth
Chin. J. Semicond. 2006, 27(3): 419
An Evanescent Coupling Approach for Optical Characterization of ZnO Nanowires
Chin. J. Semicond. 2006, 27(3): 425
Chin. J. Semicond. 2006, 27(3): 429
Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter
Chin. J. Semicond. 2006, 27(3): 434
Neural-Network-Based Charge Density Quantum Correction of Nanoscale MOSFETs
Chin. J. Semicond. 2006, 27(3): 438
A Novel High Output Resistance Current Source Based on Negative Resistance
Chin. J. Semicond. 2006, 27(3): 443
Chin. J. Semicond. 2006, 27(3): 448
Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling
Chin. J. Semicond. 2006, 27(3): 454
Chin. J. Semicond. 2006, 27(3): 459
An Implementation of a CMOS Down-Conversion Mixer for GSM1900 Receivers
Chin. J. Semicond. 2006, 27(3): 467
Modified Reynolds Equation for Squeeze-Film Air Damping of Slotted Plates in MEMS Devices
Chin. J. Semicond. 2006, 27(3): 473
An Air-Breathing Micro Direct Methanol Fuel Cell with 3D KOH-Etched Cathode Structure
Chin. J. Semicond. 2006, 27(3): 478
1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy
Chin. J. Semicond. 2006, 27(3): 482
Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity
Chin. J. Semicond. 2006, 27(3): 489
A 2×3 Photonic Switch in SiGe for 1.55μm Operation
Chin. J. Semicond. 2006, 27(3): 494
Chin. J. Semicond. 2006, 27(3): 499
An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers
Chin. J. Semicond. 2006, 27(3): 506
Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film
Chin. J. Semicond. 2006, 27(3): 511
Influence of Interconnection Configuration on Thermal Dissipation of ULSI Interconnect Systems
Chin. J. Semicond. 2006, 27(3): 516
Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP
Chin. J. Semicond. 2006, 27(3): 524
Resistivity,Mobility,and Free Carrier Concentration of 6H-SiC Crystal Doped by Nitrogen
Chin. J. Semicond. 2006, 27(3): 530
Fabrication and Characteristics of In2O3 Nanowires
Chin. J. Semicond. 2006, 27(3): 536
Growth of AlSb Polycrystalline Films by Magnetron Sputtering and Annealing
Chin. J. Semicond. 2006, 27(3): 541
Investigation of a Type of Organic/Metal Schottky Diode
Chin. J. Semicond. 2006, 27(3): 545
Design of a Novel All-CMOS Built-In Temperature Sensor
Chin. J. Semicond. 2006, 27(3): 551
A 36GHz Voltage Control Oscillator in GaAs PHEMT Technology
Chin. J. Semicond. 2006, 27(3): 556
A Failure-Mechanism Identification Method in Accelerated Testing
Chin. J. Semicond. 2006, 27(3): 560
Chin. J. Semicond. 2006, 27(3): 564