Chin. J. Semicond. 2006, 27(S1): 1
Nano Electrical Devices and Integration
Chin. J. Semicond. 2006, 27(S1): 7
Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC
Chin. J. Semicond. 2006, 27(S1): 11
Chin. J. Semicond. 2006, 27(S1): 15
Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs
Chin. J. Semicond. 2006, 27(S1): 20
Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities
Chin. J. Semicond. 2006, 27(S1): 25
Design of a Low Noise,Low Power Audio Power Amplifierfor Driving Headphones
Chin. J. Semicond. 2006, 27(S1): 29
Comparison of Body-Contact and Patterned-SOI LDMOSFETs for RF Wireless Applications
Chin. J. Semicond. 2006, 27(S1): 32
Chin. J. Semicond. 2006, 27(S1): 36
Design Issues for Cross-Coupled LC Oscillators
Chin. J. Semicond. 2006, 27(S1): 40
Effect of Electron-Phonon Interaction on NonequilibriumTransport in Quantum Dot Systems
Chin. J. Semicond. 2006, 27(S1): 44
Chin. J. Semicond. 2006, 27(S1): 49
Temperature Dependences of Polaron in a Parabolic Quantum Wire
Chin. J. Semicond. 2006, 27(S1): 54
XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers
Chin. J. Semicond. 2006, 27(S1): 58
Chin. J. Semicond. 2006, 27(S1): 64
Chin. J. Semicond. 2006, 27(S1): 68
Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film
Chin. J. Semicond. 2006, 27(S1): 72
Photoluminescence During the Crystallization of a-Si∶H/SiO2 Multilayers
Chin. J. Semicond. 2006, 27(S1): 76
Formation Process of S-K Quantum Dots
Chin. J. Semicond. 2006, 27(S1): 80
Patterned Growth and Field Emission Properties of ZnO Nanorods
Chin. J. Semicond. 2006, 27(S1): 84
Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs
Chin. J. Semicond. 2006, 27(S1): 87
Influence of Thermal Annealing on Properties of InGaN Films
Chin. J. Semicond. 2006, 27(S1): 92
Investigation of Indium Surface Segregation in InxGa1-xN Films
Chin. J. Semicond. 2006, 27(S1): 97
Influence of GaN Buffer Layer for InN Growth
Chin. J. Semicond. 2006, 27(S1): 101
Properties of Zn-Diffused InP Surfaces with Sealed Tube Method
Chin. J. Semicond. 2006, 27(S1): 105
Optical Properties of a-GaN Deposited by Sputtering
Chin. J. Semicond. 2006, 27(S1): 109
Space-Charge-Limited Current Properties of Amorphous GaN Thin Films
Chin. J. Semicond. 2006, 27(S1): 113
Optical Properties of Ultralong Hexagonal Polytype Nano-Silicon Carbide Rod
Chin. J. Semicond. 2006, 27(S1): 117
Characteristics of Vanadium Ion-Implanted Layer of 4H-SiC
Chin. J. Semicond. 2006, 27(S1): 120
Deposition of SiCN Nano-Films by Sputtering Method on Quartz Substrate
Chin. J. Semicond. 2006, 27(S1): 124
Deposition and Ion Implantation of Boron Nitride Film
Chin. J. Semicond. 2006, 27(S1): 127
Growth of Nickel Silicide Thin Films by Solid Phase Reactionand Ion Beam Synthesis
Chin. J. Semicond. 2006, 27(S1): 131
Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer
Chin. J. Semicond. 2006, 27(S1): 136
Thin Highly-Relaxed SiGe Induced by Ion Implantion intothe Epitaxial Substrates
Chin. J. Semicond. 2006, 27(S1): 140
Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer
Chin. J. Semicond. 2006, 27(S1): 144
Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings
Chin. J. Semicond. 2006, 27(S1): 148
Chemical Vapor Deposition of Ge Films on Si1-xGex∶C Buffers
Chin. J. Semicond. 2006, 27(S1): 151
Influence of Deposition Parameters on Electrical Propertiesof Ge2Sb2Te5 Thin Films
Chin. J. Semicond. 2006, 27(S1): 155
Effect of Si-Implantation on the Structure and Resistance of Ge2Sb2Te5
Chin. J. Semicond. 2006, 27(S1): 158
CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry
Chin. J. Semicond. 2006, 27(S1): 161
Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer
Chin. J. Semicond. 2006, 27(S1): 165
Photoluminescence Characterization of HfON∶Tb Films with Sputtering
Chin. J. Semicond. 2006, 27(S1): 169
Electrical Properties of HfOxNy Gate Dielectrics
Chin. J. Semicond. 2006, 27(S1): 172
High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI
Chin. J. Semicond. 2006, 27(S1): 175
Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process
Chin. J. Semicond. 2006, 27(S1): 179
High Resistivity and Thick Epitaxial Layer of n-Type on Low Resistivity p-Type Substrates
Chin. J. Semicond. 2006, 27(S1): 183
Fabrication of Surface Nanostructures Using Scanning Electron Microscope
Chin. J. Semicond. 2006, 27(S1): 186
Fabrication of SOI Material Using Low Temperature Bonding Technology
Chin. J. Semicond. 2006, 27(S1): 189
Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown
Chin. J. Semicond. 2006, 27(S1): 193
Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect
Chin. J. Semicond. 2006, 27(S1): 197
Field Emission from Rare-Earth Silicides
Chin. J. Semicond. 2006, 27(S1): 202
Development of a Stripe Gate Power MOSFET
Chin. J. Semicond. 2006, 27(S1): 205
Field Emission from Hafnium Oxynitride
Chin. J. Semicond. 2006, 27(S1): 208
Field Emission from Reaction Sputtering CN Films
Chin. J. Semicond. 2006, 27(S1): 211
Electric Characteristics of Pentacene Field Effect Transistor
Chin. J. Semicond. 2006, 27(S1): 214
Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors
Chin. J. Semicond. 2006, 27(S1): 218
High Linearity Float-Zone Silicon Phototransistors with High Sensitivity and Stability
Chin. J. Semicond. 2006, 27(S1): 223
A Research on Current Collapse of GaN HEMTs Under DC High Voltage
Chin. J. Semicond. 2006, 27(S1): 227
Temperature Characteristics of Microwave Power SiGe HBTs
Chin. J. Semicond. 2006, 27(S1): 231
A Novel Strained Si Channel Heterojunction pMOSFET
Chin. J. Semicond. 2006, 27(S1): 235
Microwave Power-Tested Technology of SiC MESFET
Chin. J. Semicond. 2006, 27(S1): 239
A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs
Chin. J. Semicond. 2006, 27(S1): 242
Device Simulation of Nano-Scale MOSFETs Based on Bandstructure Calculation
Chin. J. Semicond. 2006, 27(S1): 248
Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique
Chin. J. Semicond. 2006, 27(S1): 252
Reliability Model of Thin Oxide CMOS
Chin. J. Semicond. 2006, 27(S1): 257
Development of High Performance AlGaN/GaN HEMTswith Low Ohmic Contact
Chin. J. Semicond. 2006, 27(S1): 262
Research of the Critical Parameters of Power RF LDMOS
Chin. J. Semicond. 2006, 27(S1): 266
Study of High-Speed Digital-to-Analog ConverterBased on BiCMOS Technology
Chin. J. Semicond. 2006, 27(S1): 271
Development of High Voltage pMOS Devices
Chin. J. Semicond. 2006, 27(S1): 275
Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode
Chin. J. Semicond. 2006, 27(S1): 279
High Performance Gate Length 22nm CMOS Device withStrained Channel and EOT 1.2nm
Chin. J. Semicond. 2006, 27(S1): 283
SOI Device Design for SEU Hardening
Chin. J. Semicond. 2006, 27(S1): 291
Failure Analysis of Electronic Devices
Chin. J. Semicond. 2006, 27(S1): 295
Leakage Current Analysis of High Power AlGaInP Lasers
Chin. J. Semicond. 2006, 27(S1): 299
Optical Properties of Direct Wafer Bonded Micro-Cavity Structures
Chin. J. Semicond. 2006, 27(S1): 304
Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure
Chin. J. Semicond. 2006, 27(S1): 309
Electrical Shock Effects on MCT Long-Wavelength PC Detectors
Chin. J. Semicond. 2006, 27(S1): 314
An OPAMP with High DC Gain in 0.18μm Digital CMOS
Chin. J. Semicond. 2006, 27(S1): 318
Study of Improved Performance of SOI Devices and Circuits
Chin. J. Semicond. 2006, 27(S1): 322
Solar Cells on MCZ(Ge) Silicon Substrates
Chin. J. Semicond. 2006, 27(S1): 328
Design of Continuous-Time Filter with Adjustable Bandwidth
Chin. J. Semicond. 2006, 27(S1): 332
An Integrated Four Quadrant CMOS Analog Multiplier
Chin. J. Semicond. 2006, 27(S1): 335
Application on Sidewall Chrome Attenuated NewStructure Phase Shift Mask
Chin. J. Semicond. 2006, 27(S1): 340
Fabrication of 8×8 MEMS Optical Switch Array
Chin. J. Semicond. 2006, 27(S1): 343
Wet Etching and Releasing of MEMS
Chin. J. Semicond. 2006, 27(S1): 347
FEA Method in the 3D Thermal Simulation of MCM
Chin. J. Semicond. 2006, 27(S1): 351
Principle,Practice,and Failure Analysis of IC Test Based on ATE
Chin. J. Semicond. 2006, 27(S1): 354
Investigation on Interface Planarization of Driver ICfor Storage Cells of MRAM
Chin. J. Semicond. 2006, 27(S1): 358
Small Size,Low Power RFID RF Front End Circuit Design
Chin. J. Semicond. 2006, 27(S1): 361
Study on High-Speed Digital-to-Analog Converter Basedon BiCMOS Technology
Chin. J. Semicond. 2006, 27(S1): 365
Design and Optimization of Low-Power Processor for Wireless Sensor Network
Chin. J. Semicond. 2006, 27(S1): 370
A Speech Feature Extraction Circuit Suitable for Chip Technology
Chin. J. Semicond. 2006, 27(S1): 374
Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction
Chin. J. Semicond. 2006, 27(S1): 378
Etching Characteristics of PECVD SiC
Chin. J. Semicond. 2006, 27(S1): 381
Amorphization Implant Technology in NiSi SALICIDE Process
Chin. J. Semicond. 2006, 27(S1): 385
Two Kinds of Patterned SiGe Epitaxial Growth Technologies
Chin. J. Semicond. 2006, 27(S1): 389
Direct Bonded SOI Wafers Technology
Chin. J. Semicond. 2006, 27(S1): 392
Double Side Fine CMP of Silicon Wafer
Chin. J. Semicond. 2006, 27(S1): 396
Research on CMP Slurry for Fine Polishing of Si Substrate
Chin. J. Semicond. 2006, 27(S1): 400
Relationship Between Annealing Temperature and Thermal Stress
Chin. J. Semicond. 2006, 27(S1): 403
Si-Glass Hermetic Package with the Benzo-Cyclo-Butene Material
Chin. J. Semicond. 2006, 27(S1): 407
Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si
Chin. J. Semicond. 2006, 27(S1): 411
Characteristics of Nanometer MOSFETs with Mechanical Strain in the Channel
Chin. J. Semicond. 2006, 27(S1): 415
1mm SiC Multi-Finger Gate Microwave Power Device
Chin. J. Semicond. 2006, 27(S1): 419
Magnetic Field Optimization of a Reactive Ion Etching Device with Magnetic Containment
Chin. J. Semicond. 2006, 27(S1): 422