Archive

Volume 27, Issue S1, Dec 2006

• 其他

  Match and Mixed Lithography Technology Between E-Beam Lithography System and Optical Lithography System

  Chen Baoqin, Liu Ming, Xu Qiuxia, Xue Lijun, Li Jinru, Tang Yueke, Zhao Min, Liu Zhuming, Wang Deqiang, Ren Liming, Hu Yong, Long Shibing, , Lu Jing, Yang Qinghua, Zhang Lihui

  Chin. J. Semicond.  2006, 27(S1): 1
  

  Nano Electrical Devices and Integration

  Liu Ming, Chen Baoqin, Xie Changqing, , Wang Congshun, Long Shibing, Xu Qiuxia, Li Zhigang, Yili Chengrong

  Chin. J. Semicond.  2006, 27(S1): 7
  

• PAPERS

  Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC

  Zhong Zhiqin, Gong Min, Wang Ou, Yu Zhou, Yang Zhimei, Xu Shijie, Chen Xudong, Ling Chichung, Fung Hanyuan, Beling C D

  Chin. J. Semicond.  2006, 27(S1): 11
  

  Room Temperature Resonant Tunneling and Negative DifferentialResistance Effects in a Self-Assembed Si Quantum Dot Array

  Yu Linwei, Chen Kunji, Song Jie, Wang Jiumin, Wang Xiang, Li Wei, Huang Xinfan

  Chin. J. Semicond.  2006, 27(S1): 15
  

  Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs

  Yu Tongjun, Kang Xiangning, Qin Zhixin, Chen Zhizhong, Yang Zhijian, Hu Xiaodong, Zhang Guoyi

  Chin. J. Semicond.  2006, 27(S1): 20
  

  Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities

  Chen San, Qian Bo, Chen Kunji, Cen Zhanhong, Liu Yansong, Han Peigao, Ma Zhongyuan, Xu Jun, Li Wei, Huang Xinfan

  Chin. J. Semicond.  2006, 27(S1): 25
  

  Design of a Low Noise,Low Power Audio Power Amplifierfor Driving Headphones

  Wei Benfu, Yuan Guoshun

  Chin. J. Semicond.  2006, 27(S1): 29
  

  Comparison of Body-Contact and Patterned-SOI LDMOSFETs for RF Wireless Applications

  Li Wenjun, Cheng Xinhong, Song Zhaorui, Chen Zhanfei, Liu Jun, Sun Lingling

  Chin. J. Semicond.  2006, 27(S1): 32
  

  A Model of the Temperature Dependence of the Fall Time ofa TF SOI CMOS Inverter with EM NMOST and AMPMOST Assemblies at 27～300℃

  Zhang Haipeng, Wei Tongli, Feng Yaolan, Wang Qin, Zhang Zhengfan

  Chin. J. Semicond.  2006, 27(S1): 36
  

  Design Issues for Cross-Coupled LC Oscillators

  Man Jiahan, Zhao Kun, Ye Qing

  Chin. J. Semicond.  2006, 27(S1): 40
  

  Effect of Electron-Phonon Interaction on NonequilibriumTransport in Quantum Dot Systems

  Chen Zuozi, Lu Haizhou, Lü Rong,

  Chin. J. Semicond.  2006, 27(S1): 44
  

  Influence of Interaction Between Phonons and Magnetic Fieldon Properties of Bound Polaron in a Quantum Dot

  Yu Yifu, Yin Jiwen, Xiao Jinglin

  Chin. J. Semicond.  2006, 27(S1): 49
  

  Temperature Dependences of Polaron in a Parabolic Quantum Wire

  Ding Zhaohua, Zhao Cuilan, Xiao Jinglin

  Chin. J. Semicond.  2006, 27(S1): 54
  

  XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

  Huang Zhanchao, Wu Huizhen, Lao Yanfeng, Liu Cheng, Cao Meng

  Chin. J. Semicond.  2006, 27(S1): 58
  

  Calculation of Band Gap Structures of 2D Square Lattice Photonic Crystals Using Plan Wave Expansion Method

  Cun Huanyao, Tan Renbing, Wang Rongli, Bai Han, Zhang Xi, Hu Jiaguang, Zhang Jin

  Chin. J. Semicond.  2006, 27(S1): 64
  

  Photoluminescence Study on Resonant Energy Transfer ProcessBetween Two Sizes of CdTe QDs Embedded in Gelatin Films

  Xu Ling, Ma Zhongyuan, Xu Jun, Huang Xinfan, Chen Kunji

  Chin. J. Semicond.  2006, 27(S1): 68
  

  Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film

  Liang Zhijun, Wang Zhibin, Wang Li, Zhao Fuli, Yang Shenghong, He Zhenhui, Chen Dihu

  Chin. J. Semicond.  2006, 27(S1): 72
  

  Photoluminescence During the Crystallization of a-Si∶H/SiO2 Multilayers

  Ma Zhongyuan, Han Peigao, Li Wei, Chen San, Qian Bo, Xu Jun, Xu Ling, Huang Xinfan, Chen Kunji, Feng Duan

  Chin. J. Semicond.  2006, 27(S1): 76
  

  Formation Process of S-K Quantum Dots

  Yu Like, Xu Bo, Wang Zhanguo, Jin Peng, Zhao Chang, Lei Wen, Hu Liangjun, Liu Ning

  Chin. J. Semicond.  2006, 27(S1): 80
  

  Patterned Growth and Field Emission Properties of ZnO Nanorods

  Chang Zhongkun, Yu Ke, Zhang Yongsheng, Li Lijun, Ouyang Shixi, Zhang Qingjie, Wang Qingyan, Zhu Ziqiang

  Chin. J. Semicond.  2006, 27(S1): 84
  

  Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

  Xu Tianning, Wu Huizhen, Si Jianxiao, Cao Chunfang, Qiu Dongjiang, Dai Ning

  Chin. J. Semicond.  2006, 27(S1): 87
  

  Influence of Thermal Annealing on Properties of InGaN Films

  Wen Bo, Jiang Ruolian, Liu Chengxiang, Xie Zili, Zhou Jianjun, Han Ping, Zhang Rong, Zheng Youdou

  Chin. J. Semicond.  2006, 27(S1): 92
  

  Investigation of Indium Surface Segregation in InxGa1-xN Films

  Liu Chengxiang, Xie Zili, Han Ping, Liu Bin, Li Liang, Fu Kai, Zhou Jianjun, Ye Jiandong, Wen Bo, Wang Ronghua, Zhang Yu, Chen Dunjun, Jiang Ruolian, Gu Shulin, Shi Yi, Zhang Rong, Zheng Youdou

  Chin. J. Semicond.  2006, 27(S1): 97
  

  Influence of GaN Buffer Layer for InN Growth

  Liu Bin, Zhang Rong, Xie Zili, Xiu Xiangqian, Li Liang, Liu Chengxiang, Han Ping, Zheng Youdou

  Chin. J. Semicond.  2006, 27(S1): 101
  

  Properties of Zn-Diffused InP Surfaces with Sealed Tube Method

  Lü Yanqiu, Zhuang Chunquan, Huang Yangcheng, Li Ping, Gong Haimei

  Chin. J. Semicond.  2006, 27(S1): 105
  

  Optical Properties of a-GaN Deposited by Sputtering

  Jia Lu, Xie Erqing, Pan Xiaojun, Zhang Zhenxing

  Chin. J. Semicond.  2006, 27(S1): 109
  

  Space-Charge-Limited Current Properties of Amorphous GaN Thin Films

  Zhang Zhenxing, Xie Erqing, Pan Xiaojun, Jia Lu, Han Weihua

  Chin. J. Semicond.  2006, 27(S1): 113
  

  Optical Properties of Ultralong Hexagonal Polytype Nano-Silicon Carbide Rod

  Zhang Hongtao, Chen Kun, Lemmer U, Bastian G

  Chin. J. Semicond.  2006, 27(S1): 117
  

  Characteristics of Vanadium Ion-Implanted Layer of 4H-SiC

  Wang Chao, Zhang Yuming, Zhang Yimen

  Chin. J. Semicond.  2006, 27(S1): 120
  

  Deposition of SiCN Nano-Films by Sputtering Method on Quartz Substrate

  Lin Hongfeng, Xie Erqing, Zhang Jun, Yan Xiaoqin,

  Chin. J. Semicond.  2006, 27(S1): 124
  

  Deposition and Ion Implantation of Boron Nitride Film

  Deng Jinxiang, Chen Hao, Liu Junkai, Tian Ling, Zhang Yan, Zhou Tao, He Bin, Chen Guanghua, Wang Bo, Yan Hui

  Chin. J. Semicond.  2006, 27(S1): 127
  

  Growth of Nickel Silicide Thin Films by Solid Phase Reactionand Ion Beam Synthesis

  Zhang Xingwang

  Chin. J. Semicond.  2006, 27(S1): 131
  

  Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer

  Shi Wenhua, Luo Liping, Zhao Lei, Zuo Yuhua, Wang Qiming

  Chin. J. Semicond.  2006, 27(S1): 136
  

  Thin Highly-Relaxed SiGe Induced by Ion Implantion intothe Epitaxial Substrates

  Xu Xiangdong, Guo Fulong, Zhou Wei, Liu Zhihong, Zhang Zhaojian, Li Xiyou, Zhang Wei, Qian Peixin

  Chin. J. Semicond.  2006, 27(S1): 140
  

  Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer

  Yang Hongbin, Fan Yongliang

  Chin. J. Semicond.  2006, 27(S1): 144
  

  Growth and Shape Preservation of Self-Assembled SiGe Quantum Rings

  Li Fanghua, Jiang Zuimin

  Chin. J. Semicond.  2006, 27(S1): 148
  

  Chemical Vapor Deposition of Ge Films on Si1-xGex∶C Buffers

  Wang Ronghua, Han Ping, Xia Dongmei, Li Zhibing, Han Tiantian, Liu Chengxiang, Fu Kai, Xie Zili, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Shi Yi, Zhang Rong, Zheng Youdou

  Chin. J. Semicond.  2006, 27(S1): 151
  

  Influence of Deposition Parameters on Electrical Propertiesof Ge2Sb2Te5 Thin Films

  Xia Jilin, Liu Bo, Song Zhitang, Feng Songlin

  Chin. J. Semicond.  2006, 27(S1): 155
  

  Effect of Si-Implantation on the Structure and Resistance of Ge2Sb2Te5

  Liu Bo, Song Zhitang, Feng Songlin, Chen Bomy

  Chin. J. Semicond.  2006, 27(S1): 158
  

  CMP and Electrochemical Characterization of Ge2Sb2Te5 Filmin Polishing Slurry

  Liu Qibin, Zhang Kailiang, Wang Liangyong, Song Zhitang, Feng Songlin

  Chin. J. Semicond.  2006, 27(S1): 161
  

  Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer

  Sun Shilong, , Liu Caichi, Hao Qiuyan, Teng Xiaoyun, Zhao Liwei, Zhao Yanqiao, Wang Lijian

  Chin. J. Semicond.  2006, 27(S1): 165
  

  Photoluminescence Characterization of HfON∶Tb Films with Sputtering

  Jiang Ran, Xie Erqing, Jia Changwen, Lin Hongfeng, Pan Xiaojun, Li Hui

  Chin. J. Semicond.  2006, 27(S1): 169
  

  Electrical Properties of HfOxNy Gate Dielectrics

  Jiang Ran, Xie Erqing

  Chin. J. Semicond.  2006, 27(S1): 172
  

  High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI

  Ma Tongda, Tu Hailing, Shao Beiling, Liu Ansheng, Hu Guangyong

  Chin. J. Semicond.  2006, 27(S1): 175
  

  Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

  Wang Jing, Liang Renrong, Xu Yang, Liu Zhihong, Xu Jun, Qian Peixin

  Chin. J. Semicond.  2006, 27(S1): 179
  

  High Resistivity and Thick Epitaxial Layer of n-Type on Low Resistivity p-Type Substrates

  Tan Weidong, Tang Youqing, Ma Lixing, Luo Hong, Zhang Wenqing, Gao Tao

  Chin. J. Semicond.  2006, 27(S1): 183
  

  Fabrication of Surface Nanostructures Using Scanning Electron Microscope

  Zhu Nianlin, Zhang Jin, Chen Ergang, Bai Han, Zhang Xi, Wang Guangcan, Guo Junmei, Dou Juying

  Chin. J. Semicond.  2006, 27(S1): 186
  

  Fabrication of SOI Material Using Low Temperature Bonding Technology

  Zhan Da, Ma Xiaobo, Liu Weili, Song Zhitang, Feng Songlin

  Chin. J. Semicond.  2006, 27(S1): 189
  

  Saturation Behavior of Ultrathin Gate Oxides After Soft Breakdown

  Xu Mingzhen, Tan Changhua, Duan Xiaorong

  Chin. J. Semicond.  2006, 27(S1): 193
  

  Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect

  Tan Jingjing, Zhou Mi, Chen Tao, Xie Qi, Ru Guoping, Qu Xinping

  Chin. J. Semicond.  2006, 27(S1): 197
  

  Field Emission from Rare-Earth Silicides

  Duan Huigao, Xie Erqing, Ye Fan, Wang Xiaoming

  Chin. J. Semicond.  2006, 27(S1): 202
  

  Development of a Stripe Gate Power MOSFET

  Wang Lixin, Liao Taiyi, Lu Jiang

  Chin. J. Semicond.  2006, 27(S1): 205
  

  Field Emission from Hafnium Oxynitride

  Duan Huigao, Xie Erqing, Ye Fan, Jiang Ran, Wang Xiaoming

  Chin. J. Semicond.  2006, 27(S1): 208
  

  Field Emission from Reaction Sputtering CN Films

  Lin Hongfeng, , Xie Erqing, Zhang Jun, Yan Xiaoqin

  Chin. J. Semicond.  2006, 27(S1): 211
  

  Electric Characteristics of Pentacene Field Effect Transistor

  Deng Jinxiang, Chen Guanghua, Beton P H

  Chin. J. Semicond.  2006, 27(S1): 214
  

  Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors

  Wu Huizhen, Liang Jun, Lao Yanfeng, Yu Ping, Xu Tianning, Qiu Dongjiang

  Chin. J. Semicond.  2006, 27(S1): 218
  

  High Linearity Float-Zone Silicon Phototransistors with High Sensitivity and Stability

  Han Dejun, Sun Caiming, Sheng Liyan, Zhang Xiurong, Zhang Haijun, Yan Fengzhang, Yang Ru, Zhang Lu, Ning Baojun

  Chin. J. Semicond.  2006, 27(S1): 223
  

  A Research on Current Collapse of GaN HEMTs Under DC High Voltage

  Long Fei, Du Jiangfeng, Luo Qian, Zhou Wei, Xia Jianxin, Yang Mohua

  Chin. J. Semicond.  2006, 27(S1): 227
  

  Temperature Characteristics of Microwave Power SiGe HBTs

  Yang Jingwei, Zhang Wanrong, Jin Dongyue, Qiu Jianjun, Gao Pan

  Chin. J. Semicond.  2006, 27(S1): 231
  

  A Novel Strained Si Channel Heterojunction pMOSFET

  Zhang Jing, Xu Wanjing, Tan Kaizhou, Li Rongqiang, Li Kaicheng, Liu Daoguang, Liu Luncai

  Chin. J. Semicond.  2006, 27(S1): 235
  

  Microwave Power-Tested Technology of SiC MESFET

  Wang Tongxiang, Pan Hongshu, Li Liang

  Chin. J. Semicond.  2006, 27(S1): 239
  

  A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

  He Jin, Tao Yadong, Bian Wei, Liu Feng, Niu Xudong, Song Yan

  Chin. J. Semicond.  2006, 27(S1): 242
  

  Device Simulation of Nano-Scale MOSFETs Based on Bandstructure Calculation

  Yu Zhiping, Tian Lilin

  Chin. J. Semicond.  2006, 27(S1): 248
  

  Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique

  Zhang Miao, Di Zengfeng, Liu Weili, Luo Suhua, Song Zhitang, Chu Paul K, Lin Chenglu

  Chin. J. Semicond.  2006, 27(S1): 252
  

  Reliability Model of Thin Oxide CMOS

  Liao Jingning, Guo Chunsheng, Liu Pengfei, Wu Yuehua, Li Zhiguo

  Chin. J. Semicond.  2006, 27(S1): 257
  

  Development of High Performance AlGaN/GaN HEMTswith Low Ohmic Contact

  Liu Jian, Li Chenzhan, Wei Ke, He Zhijing, Liu Guoguo, Zheng Yingkui, Liu Xinyu, Wu Dexin

  Chin. J. Semicond.  2006, 27(S1): 262
  

  Research of the Critical Parameters of Power RF LDMOS

  Huang Xiaolan, Wu Dexin, Zhang Yaohui, Li Ke, Wang Lixin

  Chin. J. Semicond.  2006, 27(S1): 266
  

  Study of High-Speed Digital-to-Analog ConverterBased on BiCMOS Technology

  Liu Daoguang, Li Rongqiang, Shi Jiangang, He Kaiquan, Liu Yukui, Tan Kaizhou, Zhang Jing, Yang Qiudong, Zhong Yi, Shu Man, Xu Wanjing, Xu Shiliu

  Chin. J. Semicond.  2006, 27(S1): 271
  

  Development of High Voltage pMOS Devices

  Song Limei, Li Hua, Du Huan, Xia Yang, Han Zhengsheng

  Chin. J. Semicond.  2006, 27(S1): 275
  

  Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode

  Zhang Haipeng, Wang Qin, Sun Lingling, Gao Mingyu, Li Wenjun, Lü Youhua, Liu Guohua, Wang Jie

  Chin. J. Semicond.  2006, 27(S1): 279
  

  High Performance Gate Length 22nm CMOS Device withStrained Channel and EOT 1.2nm

  Xu Qiuxia, Qian He, Duan Xiaofeng, Liu Haihua, Wang Dahai, Han Zhengsheng, Liu Ming, Chen Baoqin, Li Haiou

  Chin. J. Semicond.  2006, 27(S1): 283
  

  SOI Device Design for SEU Hardening

  He Wei, Zhang Zhengxuan

  Chin. J. Semicond.  2006, 27(S1): 291
  

  Failure Analysis of Electronic Devices

  Wang Kaijian, Li Guoliang, Zhang Jun, Wang Jing

  Chin. J. Semicond.  2006, 27(S1): 295
  

  Leakage Current Analysis of High Power AlGaInP Lasers

  Xu Yun, Li Yuzhang, Song Guofeng, Gan Qiaoqiang, Yang Guohua, Cao Yulian, Cao Qing, Guo Liang, Chen Lianghui

  Chin. J. Semicond.  2006, 27(S1): 299
  

  Optical Properties of Direct Wafer Bonded Micro-Cavity Structures

  Lao Yanfeng, Wu Huizhen, Huang Zhanchao, Liu Cheng, Cao Meng

  Chin. J. Semicond.  2006, 27(S1): 304
  

  Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure

  Liu Cheng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Cao Meng

  Chin. J. Semicond.  2006, 27(S1): 309
  

  Electrical Shock Effects on MCT Long-Wavelength PC Detectors

  Liu Dafu, Wu Ligang, Xu Guosen, Zhang Lianmei, Jin Xiufang, Gong Haimei

  Chin. J. Semicond.  2006, 27(S1): 314
  

  An OPAMP with High DC Gain in 0.18μm Digital CMOS

  Wang Han, Ye Qing

  Chin. J. Semicond.  2006, 27(S1): 318
  

  Study of Improved Performance of SOI Devices and Circuits

  Hai Chaohe, Han Zhengsheng, Zhou Xiaoyin, Zhao Lixin, Li Duoli, Bi Jinshun

  Chin. J. Semicond.  2006, 27(S1): 322
  

  Solar Cells on MCZ(Ge) Silicon Substrates

  Du Yongchao, Xu Shouyan, Liu Feng

  Chin. J. Semicond.  2006, 27(S1): 328
  

  Design of Continuous-Time Filter with Adjustable Bandwidth

  Mo Bangxian, Xiang Bin, Chen Jianghua, Ni Xuewen

  Chin. J. Semicond.  2006, 27(S1): 332
  

  An Integrated Four Quadrant CMOS Analog Multiplier

  Huo Mingxue, Tan Xiaoyun, Liu Xiaowei, Wang Yonggang, Ren Lianfeng, Qi Xiangkun

  Chin. J. Semicond.  2006, 27(S1): 335
  

  Application on Sidewall Chrome Attenuated NewStructure Phase Shift Mask

  Xie Changqing, Liu Ming, Chen Baoqin, Ye Tianchun

  Chin. J. Semicond.  2006, 27(S1): 340
  

  Fabrication of 8×8 MEMS Optical Switch Array

  Jia Cuiping, Dong Wei, Zhou Jingran, Liu Caixia, Zang Huidong, Xuan Wei, Xu Baokun, Chen Weiyou

  Chin. J. Semicond.  2006, 27(S1): 343
  

  Wet Etching and Releasing of MEMS

  Ou Yi, Shi Shali, Li Chaobo, Jiao Binbin, Chen Dapeng

  Chin. J. Semicond.  2006, 27(S1): 347
  

  FEA Method in the 3D Thermal Simulation of MCM

  Hu Xiuzhen, Li Zhiguo, Guo Chunsheng, Wu Yuehua, Liao Jingning

  Chin. J. Semicond.  2006, 27(S1): 351
  

  Principle,Practice,and Failure Analysis of IC Test Based on ATE

  Pan Shujuan, Zhong Jie

  Chin. J. Semicond.  2006, 27(S1): 354
  

  Investigation on Interface Planarization of Driver ICfor Storage Cells of MRAM

  Du Huan, Zhao Yuyin, Han Zhengsheng, Xia Yang, Zhang Zhichun

  Chin. J. Semicond.  2006, 27(S1): 358
  

  Small Size,Low Power RFID RF Front End Circuit Design

  Zhou Shenghua, Yang Zhichao, Wu Nanjian, Li Meiyun

  Chin. J. Semicond.  2006, 27(S1): 361
  

  Study on High-Speed Digital-to-Analog Converter Basedon BiCMOS Technology

  Li Rongqiang, Liu Daoguang, Yan Gang, He Kaiquan, Liu Yukui, Tan Kaizhou, Zhang Jing, Yang Qiudong, Zhong Yi, Shu Man, Xu Wanjing, Xu Shiliu

  Chin. J. Semicond.  2006, 27(S1): 365
  

  Design and Optimization of Low-Power Processor for Wireless Sensor Network

  Zhao Gang, Hou Ligang, Luo Rengui, Liu Yuan, Wu Wuchen

  Chin. J. Semicond.  2006, 27(S1): 370
  

  A Speech Feature Extraction Circuit Suitable for Chip Technology

  Wang Yang

  Chin. J. Semicond.  2006, 27(S1): 374
  

  Ohmic Contact on SiC Using n+ Polysilicon/n+ SiC Heterojunction

  Zhang Lin, Zhang Yimen, Zhang Yuming, Tang Xiaoyan

  Chin. J. Semicond.  2006, 27(S1): 378
  

  Etching Characteristics of PECVD SiC

  Chen Sheng, , Li Zhihong, Zhang Guobing, Guo Hui, Wang Yu

  Chin. J. Semicond.  2006, 27(S1): 381
  

  Amorphization Implant Technology in NiSi SALICIDE Process

  Jiang Yulong, Ru Guoping, Qu Xinping, Li Bingzong

  Chin. J. Semicond.  2006, 27(S1): 385
  

  Two Kinds of Patterned SiGe Epitaxial Growth Technologies

  Xu Yang, Wang Fei, Xu Jun, Liu Zhihong, Qian Peixin

  Chin. J. Semicond.  2006, 27(S1): 389
  

  Direct Bonded SOI Wafers Technology

  Huang Chenhung, Chiou Herngde

  Chin. J. Semicond.  2006, 27(S1): 392
  

  Double Side Fine CMP of Silicon Wafer

  Zhang Kailiang, Song Zhitang, Zhong Min, Zheng Mingjie, Feng Songlin

  Chin. J. Semicond.  2006, 27(S1): 396
  

  Research on CMP Slurry for Fine Polishing of Si Substrate

  Zhong Min, Zhang Kailiang, Song Zhitang, Feng Songlin

  Chin. J. Semicond.  2006, 27(S1): 400
  

  Relationship Between Annealing Temperature and Thermal Stress

  Wu Yuehua, Li Zhiguo, Liu Zhimin, Ji Yuan, Hu Xiuzhen, Liao Jingning

  Chin. J. Semicond.  2006, 27(S1): 403
  

  Si-Glass Hermetic Package with the Benzo-Cyclo-Butene Material

  Liu Yufei, Liu Wenping, Li Sihua, Wu Yaming, Luo Le

  Chin. J. Semicond.  2006, 27(S1): 407
  

  Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si

  Zhu Yanyan, Xu Run, Chen Sheng, Fang Zebo, Xue Fei, Fan Yongliang, Jiang Zuimin

  Chin. J. Semicond.  2006, 27(S1): 411
  

  Characteristics of Nanometer MOSFETs with Mechanical Strain in the Channel

  Wu Tao, Du Gang, Liu Xiaoyan, Kang Jinfeng, Han Ruqi

  Chin. J. Semicond.  2006, 27(S1): 415
  

  1mm SiC Multi-Finger Gate Microwave Power Device

  Chen Gang, Qian Wei, Chen Bin, Bai Song

  Chin. J. Semicond.  2006, 27(S1): 419
  

  Magnetic Field Optimization of a Reactive Ion Etching Device with Magnetic Containment

  Jing Xiaocheng, Yao Ruohe, Lin Yushu

  Chin. J. Semicond.  2006, 27(S1): 422
  

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