Archive

Volume 28, Issue 11, Nov 2007

• LETTERS

  The Bipolar Field-Effect Transistor:I.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)

  Chih-Tang Sah, Bin B. Jie

  Chin. J. Semicond.  2007, 28(11): 1661
  

  GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz

  Hao Yue, Yue Yuanzheng, Feng Qian, Zhang Jincheng, Ma Xiaohua, Ni Jinyu

  Chin. J. Semicond.  2007, 28(11): 1674
  

  Cost-Effective VDMOS and Compatible Process for PDP Scan-Driver IC

  Li Xiaoming, Zhuang Yiqi, Zhang Li, Xin Weiping

  Chin. J. Semicond.  2007, 28(11): 1679
  

  A Three-Stage Operational Amplifier for a Wide Range of Capacitive Loads

  Hu Jingjing, Huijsing J H, Ren Junyan

  Chin. J. Semicond.  2007, 28(11): 1685
  

  A Low-Voltage,Low-Power CMOS High Dynamic Range dB-Linear VGA for Super Heterodyne Receivers

  Dong Qiao, Geng Li, Shao Zhibiao

  Chin. J. Semicond.  2007, 28(11): 1690
  

  A Novel Verification Development Platform for PassiveUHF RFID Tag

  Chen Liying, Hou Chunping, Mao Luhong, Wu Shunhua, Xu Zhenmei, Wang Zhenxing

  Chin. J. Semicond.  2007, 28(11): 1696
  

• PAPERS

  Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC

  Wang Chao, Zhang Yimen, Zhang Yuming, Guo Hui, Xu Daqing, Wang Yuehu

  Chin. J. Semicond.  2007, 28(11): 1701
  

  A New Method for InGaAs/InP Composite ChannelHEMTs Simulation

  Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, Song Yuzhu, Liu Xunchun

  Chin. J. Semicond.  2007, 28(11): 1706
  

  A Continuous and Analytical Surface Potential Model for SOI LDMOS

  Xu Wenjie, Sun Lingling, Liu Jun, Li Wenjun, Zhang Haipeng, Wu Yanming, He Jia

  Chin. J. Semicond.  2007, 28(11): 1712
  

  Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

  Li Meng, Yu Zhiping

  Chin. J. Semicond.  2007, 28(11): 1717
  

  A Model for Mechanical Property Evaluation of the PeriodicPorous Low-k Materials by SAW

  Li Zhiguo, Yao Suying, Xiao Xia, Bai Maosen

  Chin. J. Semicond.  2007, 28(11): 1722
  

  Quasi-Static Energy Recovery Logic with Single Power-Clock Supply

  Li Shun, Zhou Feng, Chen Chunhong, Chen Hua, Wu Yipin

  Chin. J. Semicond.  2007, 28(11): 1729
  

  A Novel Multi-Stage Interpolation Filter Design Technique for High-Resolution Σ-Δ DAC

  Chen Run, Liu Liyuan, Li Dongmei

  Chin. J. Semicond.  2007, 28(11): 1735
  

  A High Voltage BCD Process Using Thin Epitaxial Technology

  Qiao Ming, Xiao Zhiqiang, Fang Jian, Zheng Xin, Zhou Xianda, Xu Jing, He Zhongbo, Duan Mingwei, Zhang Bo, Li Zhaoji

  Chin. J. Semicond.  2007, 28(11): 1742
  

  Molecular Dynamic Simulation of the Interaction Between a Low EnergyBombarding Si Atoms and the Si(001) 2×1 Reconstructed Surface

  Zhu Linshan, Jin Shisheng, Gou Fujun, Xie Quan

  Chin. J. Semicond.  2007, 28(11): 1748
  

  A Study of ZnO/Si (111) Interface Structure by Synchrotron Radiation X-Ray Grazing Incident Diffraction

  Zhao Chaoyang, Li Ruipeng, Sun Bai, Xu Pengshou, Zhang Guobin, Pan Guoqiang

  Chin. J. Semicond.  2007, 28(11): 1756
  

  Optical Properties of InN Films Grown by MOCVD

  Kong Jieying, Zhang Rong, Liu Bin, Xie Zili, Zhang Yong, Xiu Xiangqian, Zheng Youdou

  Chin. J. Semicond.  2007, 28(11): 1761
  

  Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

  Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Zhu Fuying

  Chin. J. Semicond.  2007, 28(11): 1765
  

  Microwave Photoconductivity Decay (μ-PCD) Characterization and Mechanism of p^＋-InP/n-InGaAs/n-InP Double Heterojunction Material

  Wu Xiaoli, Wang Nili, Zhang Kefeng, Tang Hengjing, Huang Yimin, Han Bing, Li Xue, Gong Haimei

  Chin. J. Semicond.  2007, 28(11): 1769
  

  A Recessed AlGaN/GaN HEMT with High Output Power in the X Band

  Feng Zhen, Zhang Zhiguo, Wang Yong, Mo Jianghui, Song Jianbo, Feng Zhihong, Cai Shujun, Yang Kewu

  Chin. J. Semicond.  2007, 28(11): 1773
  

  Effect of Plasma Dry Etching on Gate Leakage of Recessed AlGaN/GaN HEMTs

  Li Chengzhan, Pang Lei, Liu Xinyu, Huang Jun, Liu Jian, Zheng Yingkui, He Zhijing

  Chin. J. Semicond.  2007, 28(11): 1777
  

  Electrical Properties of a PZT Ferroelectric Field Effect Transistor

  Cai Daolin, Li Ping, Zhai Yahong, Zhang Shuren

  Chin. J. Semicond.  2007, 28(11): 1782
  

  RF-SOI Modeling:An Accuracy Body-Contact RF-LDMOSFET Large-Signal Model

  Liu Jun, Sun Lingling, Li Wenjun, Zhong Wenhua, Wu Yanming, He Jia

  Chin. J. Semicond.  2007, 28(11): 1786
  

  A New Model Library Approach to Extract VLSI Interconnect Capacitance

  Zhao Peng, Zhang Jie, Chen Kangsheng, Wang Haogang

  Chin. J. Semicond.  2007, 28(11): 1794
  

  Densely Packed High Power VCSEL Arrays

  Wang Qing, Cao Yulian, He Guorong, Wei Xin, Qu Hongwei, Song Guofeng, Ma Wenquan, Chen Lianghui

  Chin. J. Semicond.  2007, 28(11): 1803
  

  A Monolithic Integrated Long-Wavelength Tunable Photodetector Based on a Low Temperature Buffer Layer

  Lü Jihe, Huang Hui, Ren Xiaomin, Miao Ang, Li Yiqun, Wang Rui, Huang Yongqing, Wang Qi

  Chin. J. Semicond.  2007, 28(11): 1807
  

  Effects of Surface Treatments on Ohmic Contact to p-GaN

  Guo Debo, Liang Meng, Fan Manning, Shi Hongwei, Liu Zhiqiang, Wang Guohong, Wang Liangchen

  Chin. J. Semicond.  2007, 28(11): 1811
  

  Direct Bonding of n-GaAs and p-GaN Wafers

  Li Hui, He Guorong, Qu Hongwei, Shi Yan, Chong Ming, Cao Yulian, Chen Lianghui

  Chin. J. Semicond.  2007, 28(11): 1815
  

  A Novel p-Type Domino AND Gate Design for Sub-65nm CMOS Technologies

  Wang Jinhui, Gong Na, Feng Shoubo, Duan Liying, Hou Ligang, Wu Wuchen, Dong Limin

  Chin. J. Semicond.  2007, 28(11): 1818
  

  Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching

  Jiang Hai, Lü Jian, Xu Jianhua, Jiang Yadong

  Chin. J. Semicond.  2007, 28(11): 1824
  

  Design of a 2D Thermal Wind Sensor Based on MEMS Process

  Shen Guangping, Wu Jian, Zhang Hua, Qin Ming, Huang Qing’an

  Chin. J. Semicond.  2007, 28(11): 1830
  

  A Low Noise,Low Power Fully Digitally Controlled LC Oscillator for PHS Transceivers

  Wang Shaohua, Yu Guangming, Liu Yongpan, Yang Huazhong

  Chin. J. Semicond.  2007, 28(11): 1836
  

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