The Bipolar Field-Effect Transistor:I.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)
Chin. J. Semicond. 2007, 28(11): 1661
GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz
Chin. J. Semicond. 2007, 28(11): 1674
Cost-Effective VDMOS and Compatible Process for PDP Scan-Driver IC
Chin. J. Semicond. 2007, 28(11): 1679
A Three-Stage Operational Amplifier for a Wide Range of Capacitive Loads
Chin. J. Semicond. 2007, 28(11): 1685
A Low-Voltage,Low-Power CMOS High Dynamic Range dB-Linear VGA for Super Heterodyne Receivers
Chin. J. Semicond. 2007, 28(11): 1690
A Novel Verification Development Platform for PassiveUHF RFID Tag
Chin. J. Semicond. 2007, 28(11): 1696
Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC
Chin. J. Semicond. 2007, 28(11): 1701
A New Method for InGaAs/InP Composite ChannelHEMTs Simulation
Chin. J. Semicond. 2007, 28(11): 1706
A Continuous and Analytical Surface Potential Model for SOI LDMOS
Chin. J. Semicond. 2007, 28(11): 1712
Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs
Chin. J. Semicond. 2007, 28(11): 1717
A Model for Mechanical Property Evaluation of the PeriodicPorous Low-k Materials by SAW
Chin. J. Semicond. 2007, 28(11): 1722
Quasi-Static Energy Recovery Logic with Single Power-Clock Supply
Chin. J. Semicond. 2007, 28(11): 1729
A Novel Multi-Stage Interpolation Filter Design Technique for High-Resolution Σ-Δ DAC
Chin. J. Semicond. 2007, 28(11): 1735
A High Voltage BCD Process Using Thin Epitaxial Technology
Chin. J. Semicond. 2007, 28(11): 1742
Chin. J. Semicond. 2007, 28(11): 1748
Chin. J. Semicond. 2007, 28(11): 1756
Optical Properties of InN Films Grown by MOCVD
Chin. J. Semicond. 2007, 28(11): 1761
Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy
Chin. J. Semicond. 2007, 28(11): 1765
Chin. J. Semicond. 2007, 28(11): 1769
A Recessed AlGaN/GaN HEMT with High Output Power in the X Band
Chin. J. Semicond. 2007, 28(11): 1773
Effect of Plasma Dry Etching on Gate Leakage of Recessed AlGaN/GaN HEMTs
Chin. J. Semicond. 2007, 28(11): 1777
Electrical Properties of a PZT Ferroelectric Field Effect Transistor
Chin. J. Semicond. 2007, 28(11): 1782
RF-SOI Modeling:An Accuracy Body-Contact RF-LDMOSFET Large-Signal Model
Chin. J. Semicond. 2007, 28(11): 1786
A New Model Library Approach to Extract VLSI Interconnect Capacitance
Chin. J. Semicond. 2007, 28(11): 1794
Densely Packed High Power VCSEL Arrays
Chin. J. Semicond. 2007, 28(11): 1803
Chin. J. Semicond. 2007, 28(11): 1807
Effects of Surface Treatments on Ohmic Contact to p-GaN
Chin. J. Semicond. 2007, 28(11): 1811
Direct Bonding of n-GaAs and p-GaN Wafers
Chin. J. Semicond. 2007, 28(11): 1815
A Novel p-Type Domino AND Gate Design for Sub-65nm CMOS Technologies
Chin. J. Semicond. 2007, 28(11): 1818
Design of a CMOS Integrated Temperature Sensor Based on Dynamic Element Matching
Chin. J. Semicond. 2007, 28(11): 1824
Design of a 2D Thermal Wind Sensor Based on MEMS Process
Chin. J. Semicond. 2007, 28(11): 1830
A Low Noise,Low Power Fully Digitally Controlled LC Oscillator for PHS Transceivers
Chin. J. Semicond. 2007, 28(11): 1836