Archive

Volume 28, Issue S1, Jan 2007

• 其他

  Recent Advancements in Si-Based Photonic Materials and Devices

  Yu Jinzhong, Wang Qiming

  Chin. J. Semicond.  2007, 28(S1): 1
  

  Mechanism of Thermal Oxidation of 3C.SiC Grown on Si

  Zhao Yongmei, Sun Guosheng, Liu Xingfang, Li Jiaye, Zhao Wanshun, Wang Lei, Luo Muchang, Li Jinmin

  Chin. J. Semicond.  2007, 28(S1): 4
  

  Stillinger-Weber Parameters for InN：Application to InxGa1-xN

  Lei Huaping, Jiang Xunya, Yu Guanghui, Chen J, Petit S, Ruterana P, Nouet G

  Chin. J. Semicond.  2007, 28(S1): 12
  

  Seebeck Coefficient of Czochralski SiGe Alloy at High Temperatures

  Suo Kainan, Zhang Weilian, Niu Xinhuan, Jiang Zhongwei

  Chin. J. Semicond.  2007, 28(S1): 16
  

  Calculation and Fabrication of Photonic Crystal with Diamond Structure

  Zhang Ruijuan, Yin Haiqing, Wen Jing, Cao Wenbin

  Chin. J. Semicond.  2007, 28(S1): 20
  

  Effect of Deep Traps in Carrier Generation and Transport in Undoped InP Wafers

  Zhou Xiaolong, Sun Niefeng, Yang Ruixia, Zhang Weiyu, Sun Tongnian, Jarasiunas K, Sudzius M, Kadys A

  Chin. J. Semicond.  2007, 28(S1): 24
  

  Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy

  Pi Biao, Shu Yongchun, Lin Yaowang, Xu Bo, Yao Jianghong, Xing Xiaodong, Qu Shengchun, Wang Zhanguo

  Chin. J. Semicond.  2007, 28(S1): 28
  

  Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire

  Zhang Wei, Hao Qiuyan, Jing Weina, Liu Caichi, Feng Yuchun

  Chin. J. Semicond.  2007, 28(S1): 33
  

  Preparation of 3D Colloidal Crystal Film and Gold-Infiltrated Silica Artificial Opals

  Li Wenjiang, Xie Fei

  Chin. J. Semicond.  2007, 28(S1): 37
  

  Realization of Nanoelectronic Devices-Resonant Tunneling Diodes Grown on InP Substrates with High Peak to Valley Current Ratio

  Zhang Yang, Zeng Yiping, Ma Long, Wang Baoqiang, Zhu Zhanping, Wang Liangchen, Yang Fuhua

  Chin. J. Semicond.  2007, 28(S1): 41
  

  Self-Pulsation Dynamics in GaAs/AIGaAs Quantum Cascade Lasers

  Liu Junqi, Liu Fengqi, Li Lu, Shao Ye, Guo Yu, Wang Zhanguo

  Chin. J. Semicond.  2007, 28(S1): 44
  

  High Precision Finishing Process for Sapphire Substrate Surface

  Niu Xinhuan, Tan Baimei, Zhao Xiaohong, Liu Yuling

  Chin. J. Semicond.  2007, 28(S1): 48
  

  Preparation Optimization of CoSix Anti-Oxidation Barrier Layer for ULSI-Cu Metallization

  Chen Xiuhua, Xiang Jinzhong, Xiao Xuechun, Hirai R, Shimogaki Y

  Chin. J. Semicond.  2007, 28(S1): 52
  

  A Test Circuit with Microstrip Filter for Microwave Power Device

  Luo Weijun, Chen Xiaojuan, Liu Guoguo, Liu Xinyu, Wang Xiaoyan, Fang Cebao, Guo Lunchun, Wang Xiaoliang

  Chin. J. Semicond.  2007, 28(S1): 58
  

  Control Action of Temperature on ULSI Silicon Substrate CMP Removal Rate and Kinetics Process

  Liu Yuling, Niu Xinhuan, Tan Baimei, Wang Shengli

  Chin. J. Semicond.  2007, 28(S1): 62
  

  Structure and Seebeck Effect for Transparent and Conductive CdIn2O4 Thin Film

  Yang Fengfan, Fang Liang, Li Li, Fu Guangzong, Zhang Yong, Li Mingwei, Yu Jiangtao

  Chin. J. Semicond.  2007, 28(S1): 67
  

  Mechanism of N-Doped TiO2 Photocatalyst Response to Visible Light

  Yu Huang, Zheng Xuxu, Fang Beibei

  Chin. J. Semicond.  2007, 28(S1): 75
  

  Nounique Phenomenon of Rocking Curve on (1 1 1) Surfaces of CdZnTe Wafers

  Zeng Dongmei, Wang Tao, Li Qiang, Zha Gangqiang, Jie Wanqi

  Chin. J. Semicond.  2007, 28(S1): 80
  

  Magnetic and Optical Properties of InAs/GaAs Quantum Dots Doped by High Energy Mn Implantation

  Hu Liangjun, Chen Yonghai, Ye Xiaoling, Wang Zhanguo

  Chin. J. Semicond.  2007, 28(S1): 84
  

  Optical Properties of InN

  Sun Xian, Wang Hui, Wang Lili, Liu Wenbao, Jiang Desheng, Yang Hui

  Chin. J. Semicond.  2007, 28(S1): 88
  

  Analysis of Interface Luminescence in Nano-Sized Amorphous Silicon

  Fu Guangsheng, Zhang Jiangyong, Ding Wenge, Lü Xueqin, Yu Wei

  Chin. J. Semicond.  2007, 28(S1): 91
  

  Mobility and Phonon Scattering in Epitaxial PbSe Films

  Si Jianxiao, Wu Huizhen, Xu Tianning, Cao Chunfang

  Chin. J. Semicond.  2007, 28(S1): 99
  

  Effect of Strain on the Lattice Vibrational Properties of PbSe

  Cao Chunfang, Wu Huizhen, Xu Tianning, Si Jianxiao, Chen Jing, Shen Wenzhong

  Chin. J. Semicond.  2007, 28(S1): 103
  

  Absorption Spectra of Nanocrystal PbSe and Doped Processes in Fibers

  Cheng Cheng, Wang Xiaoyan, Lvi Deyi

  Chin. J. Semicond.  2007, 28(S1): 107
  

  Carriers Distribution of Si-1xGex：C Buffers Grown on Si(100) by Chemical Vapor Deposition

  Xia Dongmei, Wang Ronghua, Wang Qi, Han Ping, Mei Qin, Chen Gang, Xie Zili, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Shi Yi, Zhang Rong, Zheng Youdou

  Chin. J. Semicond.  2007, 28(S1): 111
  

  Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy

  Gao Yuzhu, Gong Xiuying, Tomuo Yamaguchi

  Chin. J. Semicond.  2007, 28(S1): 115
  

  White Light Emission from the Composite System of ZnS/PS

  Wang Caifeng, Li Qingshan, Qi Hongxia, Zhao Bo, Lü Lei, Zhang Lichun

  Chin. J. Semicond.  2007, 28(S1): 119
  

  Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate

  Li Lianbi, Chen Zhiming, Pu Hongbin, Lin Tao, Li Jia, Chen Chunlan, Li Qingmin

  Chin. J. Semicond.  2007, 28(S1): 123
  

  Effects of Annealing Pressure of Nucleation Layer on High-Resistivity GaN

  Xu Jian, Shen Bo, Xu Fujun, Miao Zhenlin, Wang Maojun, Huang Sen, Lu Lin, Pan Yaobo, Yang Zhijian, Zhang Guoyi

  Chin. J. Semicond.  2007, 28(S1): 127
  

  Effect of the Thickness of the Strained Si on Hall Mobility

  Wang Qi, Wang Ronghua, Xia Dongmei, Zheng Youdou, Han Ping, Yu Huiqiang, Mei Qin, Xie Zili, Xiu Xiangqian, Zhu Shunming, Gu Shulin, Shi Yi, Zhang Rong

  Chin. J. Semicond.  2007, 28(S1): 130
  

  Dislocations and Microdefects in Large Diameter SI-GaAs。

  Zhao Yanqiao, Liu Caichi, Hao Qiuyan, Sun Weizhong

  Chin. J. Semicond.  2007, 28(S1): 133
  

  Surface Defects and Micro Defects in LEC GaAs Crystal

  Zhu Ronghui, Zeng Yiping, Bu Junpeng, Hui Feng, Zheng Hongjun, Zhao Ji, Gao Yongliang

  Chin. J. Semicond.  2007, 28(S1): 137
  

  GaAs Nanostructures Formed by Self-Assembled Droplet Epitaxy

  Zhan Feng, Huang Shesong, Ni Haiqiao, Zhao Huan, Xiong Yonghua, Zhou Hongyu, Niu Zhichuan

  Chin. J. Semicond.  2007, 28(S1): 141
  

  Property of Ni-Doped ZnO-Based DMSs

  Xiu Xiangqian, Li Binbin, Zhang Rong, Chen Lin, Xie Zili, Han Ping, Shi Yi, Zheng Youdou

  Chin. J. Semicond.  2007, 28(S1): 145
  

  Electrical Transport Properties of ZnO/p-Si Heterostructure

  Gu Qilin, Chen Xudong, Ling Zhicong, Mei Yongfeng, Fu Jinyu, Xiao Jiju, Zhu Jianhao

  Chin. J. Semicond.  2007, 28(S1): 149
  

  Influence of O2/Ar Ratio on Optical Properties of ZnO Films

  Yu Fen, Yan Jinliang, Ma Qiuming

  Chin. J. Semicond.  2007, 28(S1): 153
  

  Quality of ZnO Expitaxial Film on m-Sapphire Substrate

  Cui Junpeng, Duan Yao, Wang Xiaofeng, Zeng Yiping

  Chin. J. Semicond.  2007, 28(S1): 157
  

  Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering

  Ma Xiaocui, Liu Wenjun, Zhu Deliang, Cao Peijiang, Jiang Zongzhang, Xiao Huojie

  Chin. J. Semicond.  2007, 28(S1): 160
  

  Lattice Perfection of GaSb and InAs Single Crystal Substrate

  Lü Xiaohong, Zhao Youwen, Sun Wenrong, Dong Zhiyuan

  Chin. J. Semicond.  2007, 28(S1): 163
  

  Electrical Characteristics of Cubic ZnMgO

  Jin Guofen, Wu Huizhen, Liang Jun, Lao yanfeng, Yu Ping, Xu Tianning

  Chin. J. Semicond.  2007, 28(S1): 167
  

  Donor-Acceptor Luminescence in ZnO：LiCl/p-Si Films

  Liu Cihui, Xu Xiaoqiu, Zhong Ze, Fu Zhuxi

  Chin. J. Semicond.  2007, 28(S1): 171
  

  Influence of Vacancy and Interstitial on Material Property of Semi-Insulating lnP Single Crystal

  Zhao Youwen, Lü Xiaohong, Dong Zhiyuan, Duan Manlong, Sun Wenrong

  Chin. J. Semicond.  2007, 28(S1): 175
  

  Band Gaps of Two-Dimensional Photonic Crystal Structure Using InP Films

  Dang Suihu, Han Peide, Li Chunxia, Jia Wei, Chi Mei, Liu Xuguang, Xu Bingshe

  Chin. J. Semicond.  2007, 28(S1): 179
  

  Growth and characterization of InP-based and phosphorous-involved materials for applications to HBTs by GSMBE were studied systematically. High quality 50ram InP-based HBT and 100mm InGaP/GaAs HBT epitaxial materials were obtained through optimizing the HBT structure design and the GSMBE growth condition. It is shown that the HBT devices and circuits with high performance can be achieved by using the epi-wafers grown by the GSMBE technology developed in this work.

  Qi Ming, Xu Anhuai, Ai Likun, Sun Hao, Zhu Fuying

  Chin. J. Semicond.  2007, 28(S1): 182
  

  Semi-Insulating Long InP Single Crystal Growth

  Sun Niefeng, Mao Luhong, Guo Weilian, Zhou Xiaolong, Yang Ruixia, Zhang Weiyu, Sun Tongnian

  Chin. J. Semicond.  2007, 28(S1): 186
  

  Heteroepitaxy of InP/GaAs by MOCVD

  Zhou Jing, Wang Qi, Xiong Deping, Cai Shiwei, Huang Hui, Huang Yongqing, Ren Xiaomin

  Chin. J. Semicond.  2007, 28(S1): 190
  

  Growth of High AI Content AIGaN Epilayer by MOCVD

  Wang Xiaoyan, Wang Xiaoliang, Hu Guoxin, Wang Baozhu, Li Jianping, Xiao Hongling, Wang Junxi, Liu Hongxin, Zeng Yiping, Li Jinmin

  Chin. J. Semicond.  2007, 28(S1): 193
  

  Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE

  Wang Baozhu, Wang Xiaoliang, Wang Xiaoyan, Wang Xinhua, Guo Lunchun, Xiao Hongling, Wang Cuimei, Ran Junxue, Wang Junxi, Liu Hongxin, Li Jinmin

  Chin. J. Semicond.  2007, 28(S1): 197
  

  High Resistivity Step-Graded InAIAs/GaAs Metamorphic Buffer Layers Grown by Molecular Beam Epitaxy in Low Temperature

  Gao Hongling, Wang Baoqiang, Zhu Zhanping, Li Chengji, Duan Ruifei, Zeng Yiping

  Chin. J. Semicond.  2007, 28(S1): 200
  

  Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs

  Bi Jingfeng, Zhao Jianhua, Deng Jiajun, Zheng Yuhong, Wang Weizhu, Li Shushen

  Chin. J. Semicond.  2007, 28(S1): 204
  

  Formation and Diffusion of Ordered Quantum Clusters on (001) GaAs Substrate Induced by Masked Ion Implantation

  Zhou Huiying, Qu Shengchun, Liu Junpeng, Wang Zhanguo

  Chin. J. Semicond.  2007, 28(S1): 208
  

  Growth and Characterization of Diluted Magnetic Cr-Doped InAs Self-Organized Quantum Dots

  Zheng Yuhong, Zhao Jianhua, Bi Jingfeng, Wang Weizhu, Deng Jiajun, Xia Jianba

  Chin. J. Semicond.  2007, 28(S1): 211
  

  1.3μm Photoluminescence from Multi-Stacked InAs/GaAs Quantum Dot Structure

  Liu Ning, Jin Peng, Wu Ju, Wang Zhanguo

  Chin. J. Semicond.  2007, 28(S1): 215
  

  Fast Epitaxy of 3C-SiC Grown on Si Substrate

  Li Jiaye, Zhao Yongmei, Liu Xingfang, Sun Guosheng, Wang Lei, Zhao Wanshun, Luo Muchang, Zeng Yiping, Li Jinmin

  Chin. J. Semicond.  2007, 28(S1): 218
  

  Growth of Vanadium Doped Semi-Insulating 6H-SiC

  Ning Lina, Hu Xiaobo, Chen Xiufang, Li Juan, Wang Yingmin, Jiang Shouzhen, Xu Xiangang

  Chin. J. Semicond.  2007, 28(S1): 221
  

  Effects of Different Heights and Spaces of a Multi-Turn Inductive Coil on Temperature Distribution in the Large-Size 6H-SiC Growth System

  Zhang Qunshe, Chen Zhiming

  Chin. J. Semicond.  2007, 28(S1): 225
  

  Morphology of GaN Film on Si(1 l 1) Substrate Using AIN Buffer

  Liu Zhe, Wang Xiaoliang, Wang Junxi, Hu Guoxin, Li Jianping, Zeng Yiping, Li Jinmin

  Chin. J. Semicond.  2007, 28(S1): 230
  

  Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer

  Guo Lunchun, Wang Xiaoliang, Hu Guoxin, Li Jianping, Luo Weijun

  Chin. J. Semicond.  2007, 28(S1): 234
  

  Hydride Vapor Phase Epitaxy of Thick GaN with Low Temperature AIN Interlayers

  Yu Guanghui, Lei Benliang, Meng Sheng, Wang Xinzhong, Lin Chaotong, Qi Ming

  Chin. J. Semicond.  2007, 28(S1): 238
  

  High Quality GaN Films Growth on Pre-Treated Sapphire Substrate

  Peng Dongsheng, Feng Yuchun, Niu Hanben

  Chin. J. Semicond.  2007, 28(S1): 241
  

  Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

  Gao Lihua, Yang Yunke, Chen Haixin, Fu Song

  Chin. J. Semicond.  2007, 28(S1): 245
  

  Growth and Characterization of m Plane GaN Material by MOCVD

  Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, Liu Bin, Li Liang, Zhao Hong, Zhu Shunming, Jiang Ruolian, Zhou Shengmin, Shi Yi, Zheng Youdou

  Chin. J. Semicond.  2007, 28(S1): 249
  

  Theoretical Simulation of Vertical HVPE Reactor and GaN Thick Film Growth

  Ma Ping, Duan Yao, Wei Tongbo, Duan Ruifei, Wang Junxi, Zeng Yiping, Li Jinmin

  Chin. J. Semicond.  2007, 28(S1): 253
  

  Influence of Temperature on MOCVD Growth of InGaN

  Wang Lili, Wang Hui, Sun Xian, Wang Hai, Zhu Jianjun, Yang Hui, Liang Junwu

  Chin. J. Semicond.  2007, 28(S1): 257
  

  MOCVD Growth of InN Films on Sapphire Substrates

  Xiao Hongling, Wang Xiaoliang, Yang Cuibai, Hu Guoxin, Ran Junxue, Wang Cuimei, Zhang Xiaobin, Li Jianping, Li Jinmin

  Chin. J. Semicond.  2007, 28(S1): 260
  

  Growth of AIN Crystals by PVT

  Wu Honglei, Zheng Ruisheng, Sun Xiuming

  Chin. J. Semicond.  2007, 28(S1): 263
  

  Growth and Characterization of Zn Doped SnO2 Nanowires

  Meng Hui, Wang Cong

  Chin. J. Semicond.  2007, 28(S1): 267
  

  A Novel Solid Source for Fabrication of High Quality ZnO Film

  Dai Liping, Deng Hong, Chen Gen, Chen Jinju

  Chin. J. Semicond.  2007, 28(S1): 271
  

  Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD

  Lu Yangfan, Ye Zhizhen, Zeng Yujia, Xu Weizhong, Zhu Liping, Zhao Binghui

  Chin. J. Semicond.  2007, 28(S1): 275
  

  Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD

  Pan Xinhua, Ye Zhizhen, Zhu Liping, Gu Xiuquan, He Haiping

  Chin. J. Semicond.  2007, 28(S1): 279
  

  Single Crystalline Co-Doped ZnO Thin Films by Molecular Beam Epitaxy and Room Temperature Ferromagnetism

  Cao Qiang, Liu Guolei, Deng Jiangxia, Xing Pengfei, Tian Yufeng, Chen Yanxue, Yan Shishen, Mei Liangmo

  Chin. J. Semicond.  2007, 28(S1): 282
  

  Influence of Sputtering Pressure on the Properties of ZnO：Ga Films Prepared by DC Reactive Magnetron Sputtering

  Ma Quanbao, Zhu Liping, Ye Zhizhen, He Haiping, Wang Jingrui, Hu Shaohua, Zhao Binghui

  Chin. J. Semicond.  2007, 28(S1): 285
  

  Effect of Different Facets of on the Growth of vapor deposition

  Zhang Panfeng, Wei Hongyuan, Fan Haibo, Cong Guangwei, Yang Shaoyan, Zhu Qinsheng, Liu Xianglin

  Chin. J. Semicond.  2007, 28(S1): 289
  

  Effect of 900℃ Air Annealing on Luminescence Properties of ZnO Thin Film by L-MBE

  Wang Dong, Zhang Jingwen, Han Feng, Zhang Xin'an, Bi Zhen, Bian Xuming, Hou Xun

  Chin. J. Semicond.  2007, 28(S1): 293
  

  Fabrication and Magnetic Property of Mn Doped ZnO Nanowires

  Chang Yongqin, Yu Dapeng, Long Yi

  Chin. J. Semicond.  2007, 28(S1): 296
  

  Growth Mode Control of Large Size ZnO Single Crystal Growth Through Chemical Vapor Transport

  Zhang Xin'an, Zhang Jingwen, Wang Dong, Bi Zhen

  Chin. J. Semicond.  2007, 28(S1): 300
  

  Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate

  Zhang Xin'an, Zhang Jingwen, Wang Dong, Bi Zhen, Bian Xuming, Zhang Weifeng, Hou Xun

  Chin. J. Semicond.  2007, 28(S1): 306
  

  Simulation of the ZnO-MOCVD Horizontal Reactor Geometry

  Liu Songmin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, Zhang Rong, Zheng Youdou

  Chin. J. Semicond.  2007, 28(S1): 309
  

  Property of ZnO Varistors Prepared by Fractional Precipitation on Seed Materials

  Wang Yuping, Li Shengtao, Zhang Mingcai

  Chin. J. Semicond.  2007, 28(S1): 312
  

  Synthesis of ZnO Nanorods and Nanorod Arrays Through Hydrothermal Methods

  Liu Changyou, Li Huanyong, Jie Wanqi

  Chin. J. Semicond.  2007, 28(S1): 316
  

  Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition

  Zhang Yinzhu, Ye Zhizhen, Lü Jianguo, He Haiping, Gu Xiuquan

  Chin. J. Semicond.  2007, 28(S1): 322
  

  PLD Growth of P-Type ZnMgO Films with Li-Doped

  Qiu Mingxia, Ye Zhizhen, He Haiping, Gu Xiuquan, Zhu Liping

  Chin. J. Semicond.  2007, 28(S1): 326
  

  MgxZn1-xO Nanorod Arrays Synthesized by Pulsed-Laser Deposition

  Gu Xiuquan, Zhu Liping, Ye Zhizhen, He Haiping, Zhang Yinzhu, Zhao Binghui

  Chin. J. Semicond.  2007, 28(S1): 329
  

  Monotonous Linearity Varying Stratified Nanocrystalline Silicon Films and as p-i-n Layer in Thin Film Solar Cells

  Jin Fei, Zhang Weijia, Jia Shiliang, Ding Zhaochong, Yan Lanqin, Wang Tianmin, Li Guohua

  Chin. J. Semicond.  2007, 28(S1): 333
  

  Electrical and Optical Properties of Cu2 ZnSnS4 Thin Films Prepared for Solar Cell Absorber

  Shao Lexi, Fu Yujun, Zhang Jun, He Deyan

  Chin. J. Semicond.  2007, 28(S1): 337
  

  Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+

  Jiang Lijuan, Wang Xiaoliang, Liu Chao, Xiao Hongling, Wang Cuimei, Ran Junxue, Hu Guoxin, Li Jianping

  Chin. J. Semicond.  2007, 28(S1): 341
  

  Study on the Composition Deviations in CZT Crystal Grown by MVB Method

  Wang Tao, Yang Ge, Zeng Dongmei, Xu Yadong, Jie Wanqi

  Chin. J. Semicond.  2007, 28(S1): 345
  

  Influence of Deposition Parameters on Diamond Grain Size in DC Arc Plasma Jet CVD

  Chen Guangchao, Lan Hao, Li Bin, Dai Fengwei, Askari J, Hei Lifu, Song Jianhua, Li Chengming, Tang Weizhong, Tong Yumei, Lü Fanxiu

  Chin. J. Semicond.  2007, 28(S1): 348
  

  Synthesis and Properties of bis(2-Hydroxy-3-Methoxy Benzaldehyde) Schiff Base and Its Zinc (Ⅱ) Complex

  Chen Liuqing, Xu Huixia, Wang Hua, Hou Lixin, Ma Chen, Liu Xuguang, Xu Bingshe

  Chin. J. Semicond.  2007, 28(S1): 352
  

  Fabrication of Three-Dimensional Photonic Crystals with Diamond Structure by SLA Technique

  Wen Jing, Yin Haiqing, Zhang Ruijuan, Cao Wenbin

  Chin. J. Semicond.  2007, 28(S1): 357
  

  Design and Fabrication of Photonic Crystal Slab Operating at Band Edge

  Tang Haixia, Wang Qiming

  Chin. J. Semicond.  2007, 28(S1): 360
  

  Hybrid Organic/Inorganic Bulk Heteroj unction Solar Cells

  Liu Junpeng, Qu Shengchun, Zeng Xiangbo, Xu Ying, Chen Yonghai, Wang Zhijie, Zhou Huiying, Wang Zhanguo

  Chin. J. Semicond.  2007, 28(S1): 364
  

  Current_Voltage Characteristics of n-SiOxNy/n-Si Heterojunction Diode Grown on Silicon

  Xu Mingzhen, Tan Changhua

  Chin. J. Semicond.  2007, 28(S1): 369
  

  Current-Voltage Characteristic of Alloyed Ni/Au on p-GaN

  Wang Yanjie, Yang Ziwen, Liao Hui, Hu Chengyu, Pan Yaobo, Yang Zhijian, Zhang Bei, Zhang Guoyi, Hu Xiaodong

  Chin. J. Semicond.  2007, 28(S1): 372
  

  High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures

  Wang Maojun, Shen Bo, Wang Yan, Huang Sen, Xu Fujun, Xu Jian, Yang Zhijian, Zhang Guoyi

  Chin. J. Semicond.  2007, 28(S1): 376
  

  Epitaxial Growth of 4H-SiC MESFET Structures

  Li Zheyang, Dong Xun, Bai Song, Chen Gang, Chen Tangsheng, Chen Chen

  Chin. J. Semicond.  2007, 28(S1): 379
  

  Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate

  Chen Tangsheng, Wang Xiaoliang, Jiao Gang, Zhong Shichang, Ren Chunjiang, Chen Chen, Li Fuxiao

  Chin. J. Semicond.  2007, 28(S1): 398
  

  High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates

  Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Ran Junxue, Luo Weijun, Tang Jian, Li Jianping, Li Jinmin, Wang Zhanguo

  Chin. J. Semicond.  2007, 28(S1): 402
  

  Characteristic of the Recessed-Gate AIGaN/GaN HEMT with a Field Plate

  Chen Chen, Chen Tangsheng, Ren Chunjiang, Xue Fangshi

  Chin. J. Semicond.  2007, 28(S1): 407
  

  Extraction of the Small-Signal Equivalent Circuit Parameters of the AIGaN/GaN HEMT Device

  Liu Dan, Chen Xiaojuan, Luo Weijun, Li Chengzhan, Lin Xinyu, He Zhijing

  Chin. J. Semicond.  2007, 28(S1): 411
  

  Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates

  Ma Long, Zhang Yang, Dai Yang, Yang Fuhua, Zeng Yiping, Wang Liangchen

  Chin. J. Semicond.  2007, 28(S1): 414
  

  Location and Active Energy for Trap in AIGaN/GaN HFET

  Xue Fangshi

  Chin. J. Semicond.  2007, 28(S1): 418
  

  Threshold Voltage of AIGaN/GaN HFET

  Lin Zhaojun, Zhao Jianzhi, Zhang Min

  Chin. J. Semicond.  2007, 28(S1): 422
  

  DC Performance of InGaP/GaAs HBT with Two Different Structures。

  Lin Ling, Xu Anhuai, Sun Xiaowei, Qi Ming

  Chin. J. Semicond.  2007, 28(S1): 426
  

  Irradiation Effects on DC Current Gain of SiGe HBT

  Meng Xiangti, Wang Jilin, Huang Qiang, Jia Hongyong, Chen Peiyi, Qian Peixin

  Chin. J. Semicond.  2007, 28(S1): 430
  

  Analysis and Optimization of Power Si1-x Gex/Si Heteroj unction Bipolar Transistor for Wireless Local Area Network Applications

  Xue Chunlai, Shi Wenhua, Cheng Buwen, Yao Fei, Wang Qiming

  Chin. J. Semicond.  2007, 28(S1): 435
  

  Non-Uniform Emitter Ballasting Resistor Design of Multi-Finger Power HBTs with a Thermal-Electrical Model

  Jin Dongyue, Zhang Wanrong, Xie Hongyun, Wang Yang, Qiu Jianjun

  Chin. J. Semicond.  2007, 28(S1): 439
  

  Agilent HBT Model Parameters Extraction Procedure For InP HBT’

  He Jia, Sun Lingling, Liu Jun

  Chin. J. Semicond.  2007, 28(S1): 443
  

  A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test

  Guo Chunsheng, Li Xiuyu, Zhu Chunjie, Ma Weidong, Lü Changzhi, Li Zhiguo

  Chin. J. Semicond.  2007, 28(S1): 448
  

  Reservoir Effect in Multi-Layer Metal System

  Guo Chunsheng, Li Xiuyu, Li Zhiguo, Wu Yuehua

  Chin. J. Semicond.  2007, 28(S1): 452
  

  Electroluminescence Spectra of the Near-Infrared InP-Based QuantumWire Lasers

  Yang Xinrong, Xu Bo, Wang Zhanguo, Ren Yunyun, Jiao Yuheng, Liang Lingyan, Tang Chenguang

  Chin. J. Semicond.  2007, 28(S1): 457
  

  Dynamic Analysis of Charges in Organic Light-Emitting Device

  Wang Hua, Hao Yuying, Chen Liuqing, Zhou Hefeng, Liu Xuguang, Xu Bingshe

  Chin. J. Semicond.  2007, 28(S1): 460
  

  Enhancement of Light Extraction from Microstructured GaN-Based Light Emitting Diodes by Technique of Nanoimprint。

  Bao Kui, Zhang Bei, Dai Tao, Kang Xiangning, Chen Zhizhong, Wang Zhimin, Chen Yong

  Chin. J. Semicond.  2007, 28(S1): 464
  

  Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。

  Cao Meng, Wu Huizhen, Lao Yanfeng, Liu Cheng, Xie Zhengsheng, Cao Chunfang

  Chin. J. Semicond.  2007, 28(S1): 467
  

  Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode

  Wei Qiyuan, Li Ti, Wang Yanjie, Chen Weihua, Li Rui, Pan Yaobo, Xu Ke, Zhang Bei, Yang Zhijian, Hu Xiaodon

  Chin. J. Semicond.  2007, 28(S1): 471
  

  Organic Light Emitting Diode Using Mg Doped Organic Acceptor Involved in Electron Inj ection

  Cao Guohua, Qin Dashan, Cao Junsong, Zeng Yiping, Li Jinmin

  Chin. J. Semicond.  2007, 28(S1): 475
  

  Proton Irradiation on the Performance of the Superluminescent

  Zhao Miao, Sun Mengxiang

  Chin. J. Semicond.  2007, 28(S1): 478
  

  Vertical Electrode Structure GaN Based Light Emitting Diodes

  Kang Xiangning, Bao Kui, Chen Zhizhong, Xu Ke, Zhang Bei, Yu Tongjun, Nie Ruijuan, Zhang Guoyi

  Chin. J. Semicond.  2007, 28(S1): 482
  

  Room Temperature Continuous Wave Quantum Well Lasers

  Zhao Huan, Du Yun, Ni Haiqiao, Zhang Shiyong, Han Qin, Xu Yingqiang, Niu Zhichuan, Wu Ronghan

  Chin. J. Semicond.  2007, 28(S1): 486
  

  Room Temperature，Low Threshold Distributed Feedback Quantum Cascade Lasers

  Xu Gangyi, Li Yaoyao, Li Aizhen, Wei Lin, Zhang Yonggang, Li Hua

  Chin. J. Semicond.  2007, 28(S1): 489
  

  AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD

  Liu Bin, Zhang Rong, Xie Zili, Ji Xiaoli, Li Liang, Zhou Jianjun, Jiang Ruolian, Han Ping, Zheng Youdou, Zheng Jianguo, Gong Haimei

  Chin. J. Semicond.  2007, 28(S1): 492
  

  Surface Roughening with Sapphire Microlens Arrays in Flip-Chip GaN-Based LEDs。

  Liu Zhiqiang, Wang Liangchen, Yi Xiaoyan, Wang Libin, Chen Yu, Guo Debo, Ma Long

  Chin. J. Semicond.  2007, 28(S1): 496
  

  Analyses in Reliability of GaN-Based High Power Light Emitting Diodes

  Chen Yu, Wang Liangchen, Yi Xiaoyan, Wang Libin, Liu Zhiqiang, Ma Long, Yan Lihong

  Chin. J. Semicond.  2007, 28(S1): 500
  

  Thermal Simulation and Analysis of High Power Flip-Chip Light-Emitting Diode System

  Wang Libin, Liu Zhiqiang, Chen Yu, Yi Xiaoyan, Ma Long, Pan Lingfeng, Wang Liangchen

  Chin. J. Semicond.  2007, 28(S1): 504
  

  Photonic Crystal Vertical Cavity Surface Emitting and Detecting Photodiodes

  Song Qian, Xu Xingsheng, Hu Haiyang, Lu Lin, Wang Chunxia, Du Wei, Liu Famin, Chen Hongda

  Chin. J. Semicond.  2007, 28(S1): 509
  

  High-Reliability 16×16 SOI Thermo-Optic Switch Matrix’

  Li Yuntao, Yu Jinzhong, Li ZhiYang, Chen Shaowu

  Chin. J. Semicond.  2007, 28(S1): 513
  

  Compact Blocking 8×8 Optical Matrix Switch on S01 with Taper Waveguides and Self-Aligned Total Internal Reflection Mirrors

  Li ZhiYang, Li Yuntao, Liu Jingwei, Chen Shaowu, Yu Jinzhong

  Chin. J. Semicond.  2007, 28(S1): 516
  

  Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’

  Li Xianjie, Zhao Yonglin, Cai Daomin, Zeng Qingming, Pu Yunzhang, Guo Yana, Wang Zhigong, Wang Rong, Qi Ming, Chen Xiaojie, Xu Anhuai

  Chin. J. Semicond.  2007, 28(S1): 520
  

  Investigation on Monolithic Integration of Distributed Feedback Lasers and Y-Branch for Microwave Generation。

  Wang Lu, Xie Hongyun, Zhao Lingjuan, Pan Jiaoqing, Zhou Fan, Bian Jing, Wang Lufeng, Zhu Hongliang, Wang Wei

  Chin. J. Semicond.  2007, 28(S1): 525
  

  Parallel Optical Transmitter and Receiver Modules with Optical Interconnection‘

  Chen Xiongbin, Tang Jun, Zhou Yi, Pei Weihua, Liu Bo, Chen Hongda

  Chin. J. Semicond.  2007, 28(S1): 529
  

  Manufacture of 37.5Gbit/s Optical Transmission Modules

  Tang Jun, Chen Hongda, Pei Weihua, Jia Jiuchun, Zhou Yi

  Chin. J. Semicond.  2007, 28(S1): 533
  

  Resistivity Measurement of High-Resistivity GaN Film

  Fang Cebao, Wang Xiaoliang, Xiao Hongling, Wang Cuimei, Ran Junxue, Li Chengji, Luo Weijun, Yang Cuibai, Zeng Yiping, Li Jinmin

  Chin. J. Semicond.  2007, 28(S1): 536
  

  Gas Fluid Modeling of SiC Epitaxial Growth in Chemical Vapor Deposition Processes

  Jia Renxu, Zhang Yimen, Zhang Yuming, Guo Hui

  Chin. J. Semicond.  2007, 28(S1): 541
  

  Effect of Surface Treatment on P-GaN Ohmic Contact Property

  Zhao Desheng, Zhang Shuming, Zhu Jianjun, Zhao Degang, Duan Lihong, Zhang Baoshun, Yang Hui

  Chin. J. Semicond.  2007, 28(S1): 545
  

  Study of ITO Contact to P-SiCGe

  Chen Chunlan, Chen Zhiming, Pu Hongbin, Li Lianbi, Li Jia

  Chin. J. Semicond.  2007, 28(S1): 548
  

  Barriers of Au/CdZnTe with Synchrotron Radiation

  Zha Gangqiang, Tan Tingting, Zhang Wenhua, Jie Wanqi

  Chin. J. Semicond.  2007, 28(S1): 552
  

  A New Method for Testing Inner Strains of Semiconductor Substrate Materials--Polarization Transmittance Difference

  Zhao Linghui, Chen Yonghai

  Chin. J. Semicond.  2007, 28(S1): 555
  

  Study of AIGalnP/Si Wafer Bonding

  Guo Debo, Liang Meng, Fan Manning, Liu Zhiqiang, Wang Liangchen, Wang Guohong

  Chin. J. Semicond.  2007, 28(S1): 558
  

  Etching Behavior of Microdefect in Diluted Magnetic Semiconductor H90.89 Mn0.11Te

  Wang Zewen, Zhang Long, Gu Zhi, Jie Wanqi

  Chin. J. Semicond.  2007, 28(S1): 561
  

  4H-SiC MESFET Device Process

  Chen Gang, Bai Song, Zhang Tao, Wang Hao, Li Zheyang, Jiang Youquan

  Chin. J. Semicond.  2007, 28(S1): 565
  

  Challenges and Solution of Fabrication Techniques for Silicon-Based NanD-Photonics Devices。

  Chen Shaowu, Tu Xiaoguang, Yu Hejun, Fan Zhongchao, Xu Xuejun, Yu Jinzhong

  Chin. J. Semicond.  2007, 28(S1): 568
  

  Study of CMP Lapping Technique of ULSI Silicon Substrate

  Zhou Jianwei, Liu Yuling, Zhang Wei

  Chin. J. Semicond.  2007, 28(S1): 572
  

  Analysis of Factors Affecting CMP Removal Rate of Lithium Niobate

  Tan Baimei, Niu Xinhuan, Han Lili, Liu Yuling, Cui Chunxiang

  Chin. J. Semicond.  2007, 28(S1): 574
  

  Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors

  Liu Xingfang, Sun Guosheng, Li Jinmin, Zhao Yongmei, Ning Jin, Wang Lei, Zhao Wanshun, Luo Muchang, Li Jiaye, Zeng Yiping

  Chin. J. Semicond.  2007, 28(S1): 579
  

  Influence of Neutron Radiation on Performance of Color CMOS Image Sensors

  Meng Xiangti, Kang Aiguo, Huang Qiang

  Chin. J. Semicond.  2007, 28(S1): 583
  

  Characteristics of Metal-Semiconductor-Metal Photodetectors Based on GaN

  Liu Wenbao, Sun Xian, Wang Xiaolan, Zhang Shuang, Liu Zongshun, Zhao Degang, Yang Hui

  Chin. J. Semicond.  2007, 28(S1): 588
  

  Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell

  Hu Guang, Zhang Kai, Ye Yun, Wu Wen, Liu Chan, Gu Haoshuang

  Chin. J. Semicond.  2007, 28(S1): 591
  

  Preparation and Properties of AlGaN/AIN/GaN HEMTs with Compositionally Step-Graded AIGaN Barrier Layer

  Ma Zhiyong, Wang Xiaoliang, Hu Guoxin, Xiao Hongling, Wang Cuimei, Ran Junxue, Li Jianping

  Chin. J. Semicond.  2007, 28(S1): 3944
  

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