Recent Advancements in Si-Based Photonic Materials and Devices
Chin. J. Semicond. 2007, 28(S1): 1
Mechanism of Thermal Oxidation of 3C.SiC Grown on Si
Chin. J. Semicond. 2007, 28(S1): 4
Stillinger-Weber Parameters for InN:Application to InxGa1-xN
Chin. J. Semicond. 2007, 28(S1): 12
Seebeck Coefficient of Czochralski SiGe Alloy at High Temperatures
Chin. J. Semicond. 2007, 28(S1): 16
Calculation and Fabrication of Photonic Crystal with Diamond Structure
Chin. J. Semicond. 2007, 28(S1): 20
Effect of Deep Traps in Carrier Generation and Transport in Undoped InP Wafers
Chin. J. Semicond. 2007, 28(S1): 24
Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy
Chin. J. Semicond. 2007, 28(S1): 28
Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire
Chin. J. Semicond. 2007, 28(S1): 33
Preparation of 3D Colloidal Crystal Film and Gold-Infiltrated Silica Artificial Opals
Chin. J. Semicond. 2007, 28(S1): 37
Chin. J. Semicond. 2007, 28(S1): 41
Self-Pulsation Dynamics in GaAs/AIGaAs Quantum Cascade Lasers
Chin. J. Semicond. 2007, 28(S1): 44
High Precision Finishing Process for Sapphire Substrate Surface
Chin. J. Semicond. 2007, 28(S1): 48
Preparation Optimization of CoSix Anti-Oxidation Barrier Layer for ULSI-Cu Metallization
Chin. J. Semicond. 2007, 28(S1): 52
A Test Circuit with Microstrip Filter for Microwave Power Device
Chin. J. Semicond. 2007, 28(S1): 58
Control Action of Temperature on ULSI Silicon Substrate CMP Removal Rate and Kinetics Process
Chin. J. Semicond. 2007, 28(S1): 62
Structure and Seebeck Effect for Transparent and Conductive CdIn2O4 Thin Film
Chin. J. Semicond. 2007, 28(S1): 67
Mechanism of N-Doped TiO2 Photocatalyst Response to Visible Light
Chin. J. Semicond. 2007, 28(S1): 75
Nounique Phenomenon of Rocking Curve on (1 1 1) Surfaces of CdZnTe Wafers
Chin. J. Semicond. 2007, 28(S1): 80
Magnetic and Optical Properties of InAs/GaAs Quantum Dots Doped by High Energy Mn Implantation
Chin. J. Semicond. 2007, 28(S1): 84
Chin. J. Semicond. 2007, 28(S1): 88
Analysis of Interface Luminescence in Nano-Sized Amorphous Silicon
Chin. J. Semicond. 2007, 28(S1): 91
Mobility and Phonon Scattering in Epitaxial PbSe Films
Chin. J. Semicond. 2007, 28(S1): 99
Effect of Strain on the Lattice Vibrational Properties of PbSe
Chin. J. Semicond. 2007, 28(S1): 103
Absorption Spectra of Nanocrystal PbSe and Doped Processes in Fibers
Chin. J. Semicond. 2007, 28(S1): 107
Carriers Distribution of Si-1xGex:C Buffers Grown on Si(100) by Chemical Vapor Deposition
Chin. J. Semicond. 2007, 28(S1): 111
Transmission Spectra for InAs1-xSbx Alloy with Cutoff Wavelength of 8-12μm Grown by Melt-Epitaxy
Chin. J. Semicond. 2007, 28(S1): 115
White Light Emission from the Composite System of ZnS/PS
Chin. J. Semicond. 2007, 28(S1): 119
Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate
Chin. J. Semicond. 2007, 28(S1): 123
Effects of Annealing Pressure of Nucleation Layer on High-Resistivity GaN
Chin. J. Semicond. 2007, 28(S1): 127
Effect of the Thickness of the Strained Si on Hall Mobility
Chin. J. Semicond. 2007, 28(S1): 130
Dislocations and Microdefects in Large Diameter SI-GaAs。
Chin. J. Semicond. 2007, 28(S1): 133
Surface Defects and Micro Defects in LEC GaAs Crystal
Chin. J. Semicond. 2007, 28(S1): 137
GaAs Nanostructures Formed by Self-Assembled Droplet Epitaxy
Chin. J. Semicond. 2007, 28(S1): 141
Property of Ni-Doped ZnO-Based DMSs
Chin. J. Semicond. 2007, 28(S1): 145
Electrical Transport Properties of ZnO/p-Si Heterostructure
Chin. J. Semicond. 2007, 28(S1): 149
Influence of O2/Ar Ratio on Optical Properties of ZnO Films
Chin. J. Semicond. 2007, 28(S1): 153
Quality of ZnO Expitaxial Film on m-Sapphire Substrate
Chin. J. Semicond. 2007, 28(S1): 157
Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering
Chin. J. Semicond. 2007, 28(S1): 160
Lattice Perfection of GaSb and InAs Single Crystal Substrate
Chin. J. Semicond. 2007, 28(S1): 163
Electrical Characteristics of Cubic ZnMgO
Chin. J. Semicond. 2007, 28(S1): 167
Donor-Acceptor Luminescence in ZnO:LiCl/p-Si Films
Chin. J. Semicond. 2007, 28(S1): 171
Influence of Vacancy and Interstitial on Material Property of Semi-Insulating lnP Single Crystal
Chin. J. Semicond. 2007, 28(S1): 175
Band Gaps of Two-Dimensional Photonic Crystal Structure Using InP Films
Chin. J. Semicond. 2007, 28(S1): 179
Semi-Insulating Long InP Single Crystal Growth
Chin. J. Semicond. 2007, 28(S1): 186
Heteroepitaxy of InP/GaAs by MOCVD
Chin. J. Semicond. 2007, 28(S1): 190
Growth of High AI Content AIGaN Epilayer by MOCVD
Chin. J. Semicond. 2007, 28(S1): 193
Effects of Growth Temperature Oil the InAIGaN Epilayer by RF-MBE
Chin. J. Semicond. 2007, 28(S1): 197
Chin. J. Semicond. 2007, 28(S1): 200
Growth,Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs
Chin. J. Semicond. 2007, 28(S1): 204
Chin. J. Semicond. 2007, 28(S1): 208
Growth and Characterization of Diluted Magnetic Cr-Doped InAs Self-Organized Quantum Dots
Chin. J. Semicond. 2007, 28(S1): 211
1.3μm Photoluminescence from Multi-Stacked InAs/GaAs Quantum Dot Structure
Chin. J. Semicond. 2007, 28(S1): 215
Fast Epitaxy of 3C-SiC Grown on Si Substrate
Chin. J. Semicond. 2007, 28(S1): 218
Growth of Vanadium Doped Semi-Insulating 6H-SiC
Chin. J. Semicond. 2007, 28(S1): 221
Chin. J. Semicond. 2007, 28(S1): 225
Morphology of GaN Film on Si(1 l 1) Substrate Using AIN Buffer
Chin. J. Semicond. 2007, 28(S1): 230
Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer
Chin. J. Semicond. 2007, 28(S1): 234
Hydride Vapor Phase Epitaxy of Thick GaN with Low Temperature AIN Interlayers
Chin. J. Semicond. 2007, 28(S1): 238
High Quality GaN Films Growth on Pre-Treated Sapphire Substrate
Chin. J. Semicond. 2007, 28(S1): 241
Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD
Chin. J. Semicond. 2007, 28(S1): 245
Growth and Characterization of m Plane GaN Material by MOCVD
Chin. J. Semicond. 2007, 28(S1): 249
Theoretical Simulation of Vertical HVPE Reactor and GaN Thick Film Growth
Chin. J. Semicond. 2007, 28(S1): 253
Influence of Temperature on MOCVD Growth of InGaN
Chin. J. Semicond. 2007, 28(S1): 257
MOCVD Growth of InN Films on Sapphire Substrates
Chin. J. Semicond. 2007, 28(S1): 260
Chin. J. Semicond. 2007, 28(S1): 263
Growth and Characterization of Zn Doped SnO2 Nanowires
Chin. J. Semicond. 2007, 28(S1): 267
A Novel Solid Source for Fabrication of High Quality ZnO Film
Chin. J. Semicond. 2007, 28(S1): 271
Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD
Chin. J. Semicond. 2007, 28(S1): 275
Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD
Chin. J. Semicond. 2007, 28(S1): 279
Chin. J. Semicond. 2007, 28(S1): 282
Chin. J. Semicond. 2007, 28(S1): 285
Effect of Different Facets of on the Growth of vapor deposition
Chin. J. Semicond. 2007, 28(S1): 289
Effect of 900℃ Air Annealing on Luminescence Properties of ZnO Thin Film by L-MBE
Chin. J. Semicond. 2007, 28(S1): 293
Fabrication and Magnetic Property of Mn Doped ZnO Nanowires
Chin. J. Semicond. 2007, 28(S1): 296
Growth Mode Control of Large Size ZnO Single Crystal Growth Through Chemical Vapor Transport
Chin. J. Semicond. 2007, 28(S1): 300
Chin. J. Semicond. 2007, 28(S1): 306
Simulation of the ZnO-MOCVD Horizontal Reactor Geometry
Chin. J. Semicond. 2007, 28(S1): 309
Property of ZnO Varistors Prepared by Fractional Precipitation on Seed Materials
Chin. J. Semicond. 2007, 28(S1): 312
Synthesis of ZnO Nanorods and Nanorod Arrays Through Hydrothermal Methods
Chin. J. Semicond. 2007, 28(S1): 316
Chin. J. Semicond. 2007, 28(S1): 322
PLD Growth of P-Type ZnMgO Films with Li-Doped
Chin. J. Semicond. 2007, 28(S1): 326
MgxZn1-xO Nanorod Arrays Synthesized by Pulsed-Laser Deposition
Chin. J. Semicond. 2007, 28(S1): 329
Chin. J. Semicond. 2007, 28(S1): 333
Electrical and Optical Properties of Cu2 ZnSnS4 Thin Films Prepared for Solar Cell Absorber
Chin. J. Semicond. 2007, 28(S1): 337
Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+
Chin. J. Semicond. 2007, 28(S1): 341
Study on the Composition Deviations in CZT Crystal Grown by MVB Method
Chin. J. Semicond. 2007, 28(S1): 345
Influence of Deposition Parameters on Diamond Grain Size in DC Arc Plasma Jet CVD
Chin. J. Semicond. 2007, 28(S1): 348
Chin. J. Semicond. 2007, 28(S1): 352
Fabrication of Three-Dimensional Photonic Crystals with Diamond Structure by SLA Technique
Chin. J. Semicond. 2007, 28(S1): 357
Design and Fabrication of Photonic Crystal Slab Operating at Band Edge
Chin. J. Semicond. 2007, 28(S1): 360
Hybrid Organic/Inorganic Bulk Heteroj unction Solar Cells
Chin. J. Semicond. 2007, 28(S1): 364
Current_Voltage Characteristics of n-SiOxNy/n-Si Heterojunction Diode Grown on Silicon
Chin. J. Semicond. 2007, 28(S1): 369
Current-Voltage Characteristic of Alloyed Ni/Au on p-GaN
Chin. J. Semicond. 2007, 28(S1): 372
High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures
Chin. J. Semicond. 2007, 28(S1): 376
Epitaxial Growth of 4H-SiC MESFET Structures
Chin. J. Semicond. 2007, 28(S1): 379
Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate
Chin. J. Semicond. 2007, 28(S1): 398
High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates
Chin. J. Semicond. 2007, 28(S1): 402
Characteristic of the Recessed-Gate AIGaN/GaN HEMT with a Field Plate
Chin. J. Semicond. 2007, 28(S1): 407
Extraction of the Small-Signal Equivalent Circuit Parameters of the AIGaN/GaN HEMT Device
Chin. J. Semicond. 2007, 28(S1): 411
Chin. J. Semicond. 2007, 28(S1): 414
Location and Active Energy for Trap in AIGaN/GaN HFET
Chin. J. Semicond. 2007, 28(S1): 418
Threshold Voltage of AIGaN/GaN HFET
Chin. J. Semicond. 2007, 28(S1): 422
DC Performance of InGaP/GaAs HBT with Two Different Structures。
Chin. J. Semicond. 2007, 28(S1): 426
Irradiation Effects on DC Current Gain of SiGe HBT
Chin. J. Semicond. 2007, 28(S1): 430
Chin. J. Semicond. 2007, 28(S1): 435
Chin. J. Semicond. 2007, 28(S1): 439
Agilent HBT Model Parameters Extraction Procedure For InP HBT’
Chin. J. Semicond. 2007, 28(S1): 443
A Novel Method to Determine the Failure Rate Using Process-Stress Accelerated Test
Chin. J. Semicond. 2007, 28(S1): 448
Reservoir Effect in Multi-Layer Metal System
Chin. J. Semicond. 2007, 28(S1): 452
Electroluminescence Spectra of the Near-Infrared InP-Based QuantumWire Lasers
Chin. J. Semicond. 2007, 28(S1): 457
Dynamic Analysis of Charges in Organic Light-Emitting Device
Chin. J. Semicond. 2007, 28(S1): 460
Chin. J. Semicond. 2007, 28(S1): 464
Chin. J. Semicond. 2007, 28(S1): 467
Characteristics and Structural Optimization of Multi-Quantum-Well Structure of GaN-Based Laser Diode
Chin. J. Semicond. 2007, 28(S1): 471
Organic Light Emitting Diode Using Mg Doped Organic Acceptor Involved in Electron Inj ection
Chin. J. Semicond. 2007, 28(S1): 475
Proton Irradiation on the Performance of the Superluminescent
Chin. J. Semicond. 2007, 28(S1): 478
Vertical Electrode Structure GaN Based Light Emitting Diodes
Chin. J. Semicond. 2007, 28(S1): 482
Room Temperature Continuous Wave Quantum Well Lasers
Chin. J. Semicond. 2007, 28(S1): 486
Room Temperature,Low Threshold Distributed Feedback Quantum Cascade Lasers
Chin. J. Semicond. 2007, 28(S1): 489
AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD
Chin. J. Semicond. 2007, 28(S1): 492
Surface Roughening with Sapphire Microlens Arrays in Flip-Chip GaN-Based LEDs。
Chin. J. Semicond. 2007, 28(S1): 496
Analyses in Reliability of GaN-Based High Power Light Emitting Diodes
Chin. J. Semicond. 2007, 28(S1): 500
Thermal Simulation and Analysis of High Power Flip-Chip Light-Emitting Diode System
Chin. J. Semicond. 2007, 28(S1): 504
Photonic Crystal Vertical Cavity Surface Emitting and Detecting Photodiodes
Chin. J. Semicond. 2007, 28(S1): 509
High-Reliability 16×16 SOI Thermo-Optic Switch Matrix’
Chin. J. Semicond. 2007, 28(S1): 513
Chin. J. Semicond. 2007, 28(S1): 516
Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’
Chin. J. Semicond. 2007, 28(S1): 520
Chin. J. Semicond. 2007, 28(S1): 525
Parallel Optical Transmitter and Receiver Modules with Optical Interconnection‘
Chin. J. Semicond. 2007, 28(S1): 529
Manufacture of 37.5Gbit/s Optical Transmission Modules
Chin. J. Semicond. 2007, 28(S1): 533
Resistivity Measurement of High-Resistivity GaN Film
Chin. J. Semicond. 2007, 28(S1): 536
Gas Fluid Modeling of SiC Epitaxial Growth in Chemical Vapor Deposition Processes
Chin. J. Semicond. 2007, 28(S1): 541
Effect of Surface Treatment on P-GaN Ohmic Contact Property
Chin. J. Semicond. 2007, 28(S1): 545
Study of ITO Contact to P-SiCGe
Chin. J. Semicond. 2007, 28(S1): 548
Barriers of Au/CdZnTe with Synchrotron Radiation
Chin. J. Semicond. 2007, 28(S1): 552
Chin. J. Semicond. 2007, 28(S1): 555
Study of AIGalnP/Si Wafer Bonding
Chin. J. Semicond. 2007, 28(S1): 558
Etching Behavior of Microdefect in Diluted Magnetic Semiconductor H90.89 Mn0.11Te
Chin. J. Semicond. 2007, 28(S1): 561
Chin. J. Semicond. 2007, 28(S1): 565
Challenges and Solution of Fabrication Techniques for Silicon-Based NanD-Photonics Devices。
Chin. J. Semicond. 2007, 28(S1): 568
Study of CMP Lapping Technique of ULSI Silicon Substrate
Chin. J. Semicond. 2007, 28(S1): 572
Analysis of Factors Affecting CMP Removal Rate of Lithium Niobate
Chin. J. Semicond. 2007, 28(S1): 574
Effect of Mesa Structures on the Responsivities of 4H-SiC Photodetectors
Chin. J. Semicond. 2007, 28(S1): 579
Influence of Neutron Radiation on Performance of Color CMOS Image Sensors
Chin. J. Semicond. 2007, 28(S1): 583
Characteristics of Metal-Semiconductor-Metal Photodetectors Based on GaN
Chin. J. Semicond. 2007, 28(S1): 588
Film Bulk Acoustic Resonator Based on AlN Piezoelectric Cell
Chin. J. Semicond. 2007, 28(S1): 591
Chin. J. Semicond. 2007, 28(S1): 3944