J. Semicond. 2011, 32(8): 082001
doi: 10.1088/1674-4926/32/8/082001
J. Semicond. 2011, 32(8): 082002
doi: 10.1088/1674-4926/32/8/082002
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy
J. Semicond. 2011, 32(8): 083001
doi: 10.1088/1674-4926/32/8/083001
Surface morphology and composition studies in InGaN/GaN film grown by MOCVD
J. Semicond. 2011, 32(8): 083002
doi: 10.1088/1674-4926/32/8/083002
Simulation of electrical properties of InxAl1-xN/AlN/GaN high electron mobility transistor structure
J. Semicond. 2011, 32(8): 083003
doi: 10.1088/1674-4926/32/8/083003
Resonant tunnelling in nc-Si/SiO2 multilayers at room temperature
J. Semicond. 2011, 32(8): 083004
doi: 10.1088/1674-4926/32/8/083004
Preparation of Sn–Ag–In ternary solder bumps by electroplating in sequence and reliability
J. Semicond. 2011, 32(8): 083005
doi: 10.1088/1674-4926/32/8/083005
J. Semicond. 2011, 32(8): 084001
doi: 10.1088/1674-4926/32/8/084001
Gate-enclosed NMOS transistors
J. Semicond. 2011, 32(8): 084002
doi: 10.1088/1674-4926/32/8/084002
Modeling of current mismatch induced by random dopant fluctuation in nano-MOSFETs
J. Semicond. 2011, 32(8): 084003
doi: 10.1088/1674-4926/32/8/084003
Current–voltage characteristics of light-emitting diodes under optical and electrical excitation
J. Semicond. 2011, 32(8): 084004
doi: 10.1088/1674-4926/32/8/084004
Antireflection properties and solar cell application of silicon nanoscructures
J. Semicond. 2011, 32(8): 084005
doi: 10.1088/1674-4926/32/8/084005
Electrode pattern design for GaAs betavoltaic batteries
J. Semicond. 2011, 32(8): 084006
doi: 10.1088/1674-4926/32/8/084006
Tunable filters based on an SOI nano-wire waveguide micro ring resonator
J. Semicond. 2011, 32(8): 084007
doi: 10.1088/1674-4926/32/8/084007
A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier
J. Semicond. 2011, 32(8): 085001
doi: 10.1088/1674-4926/32/8/085001
A 0.18 μm CMOS low noise amplifier using a current reuse technique for 3.1–10.6 GHz UWB receivers
J. Semicond. 2011, 32(8): 085002
doi: 10.1088/1674-4926/32/8/085002
A 14-bit wide temperature range differential SAR ADC with an on-chip multi-segment BGR
J. Semicond. 2011, 32(8): 085003
doi: 10.1088/1674-4926/32/8/085003
A 102-dB-SNR mixed CT/DT ΣΔADC with capacitor digital self-calibration for RC spread compensation
J. Semicond. 2011, 32(8): 085004
doi: 10.1088/1674-4926/32/8/085004
A novel low-offset dynamic comparator for sub-1-V pipeline ADCs
J. Semicond. 2011, 32(8): 085005
doi: 10.1088/1674-4926/32/8/085005
A 5 GHz CMOS frequency synthesizer with novel phase-switching prescaler and high-Q LC-VCO
J. Semicond. 2011, 32(8): 085006
doi: 10.1088/1674-4926/32/8/085006
A fast transient response low dropout regulator with current control methodology
J. Semicond. 2011, 32(8): 085007
doi: 10.1088/1674-4926/32/8/085007
A CMOS wideband front-end chip using direct RF sampling mixer with embedded discrete-time filtering
J. Semicond. 2011, 32(8): 085008
doi: 10.1088/1674-4926/32/8/085008
A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs
J. Semicond. 2011, 32(8): 085009
doi: 10.1088/1674-4926/32/8/085009
CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy
J. Semicond. 2011, 32(8): 085010
doi: 10.1088/1674-4926/32/8/085010
A Ka-band 22 dBm GaN amplifier MMIC
J. Semicond. 2011, 32(8): 085011
doi: 10.1088/1674-4926/32/8/085011
Design and implementation of a programming circuit in radiation-hardened FPGA
J. Semicond. 2011, 32(8): 085012
doi: 10.1088/1674-4926/32/8/085012
A 5 Gb/s transceiver in 0.13 μm CMOS for PCIE2.0
J. Semicond. 2011, 32(8): 085013
doi: 10.1088/1674-4926/32/8/085013
Two different LNA optimizing techniques
J. Semicond. 2011, 32(8): 085014
doi: 10.1088/1674-4926/32/8/085014
Regular FPGA based on regular fabric
J. Semicond. 2011, 32(8): 085015
doi: 10.1088/1674-4926/32/8/085015