Archive

Volume 32, Issue 8, Aug 2011

• SEMICONDUCTOR PHYSICS

  Effect of a magnetic field on the energy levels of donor impurities in the ZnO parabolic quantum well

  Yuan Lihua, Wang Daobin, Chen Yuhong, Zhang Cairong, Pu Zhongsheng, Zhang Haimin

  J. Semicond.  2011, 32(8): 082001
  doi: 10.1088/1674-4926/32/8/082001

  Annealing effects on the formation of semiconducting Mg₂Si film using magnetron sputtering deposition

  Xiao Qingquan, Xie Quan, Chen Qian, Zhao Kejie, Yu Zhiqiang, Shen Xiangqian

  J. Semicond.  2011, 32(8): 082002
  doi: 10.1088/1674-4926/32/8/082002

• SEMICONDUCTOR MATERIALS

  GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy

  Zhu Yan, Li Mifeng, He Jifang, Yu Ying, Ni Haiqiao, Xu Yingqiang, Wang Juan, He Zhenhong, Niu Zhichuan

  J. Semicond.  2011, 32(8): 083001
  doi: 10.1088/1674-4926/32/8/083001

  Surface morphology and composition studies in InGaN/GaN film grown by MOCVD

  Tao Tao, Zhang Zhao, Liu Lian, Su Hui, Xie Zili, Zhang Rong, Liu Bin, Xiu Xiangqian, Li Yi, Han Ping, Shi Yi, Zheng Youdou

  J. Semicond.  2011, 32(8): 083002
  doi: 10.1088/1674-4926/32/8/083002

  Simulation of electrical properties of In_xAl_1-xN/AlN/GaN high electron mobility transistor structure

  Bi Yang, Wang Xiaoliang, Xiao Hongling, Wang Cuimei, Yang Cuibai, Peng Enchao, Lin Defeng, Feng Chun, Jiang Lijuan

  J. Semicond.  2011, 32(8): 083003
  doi: 10.1088/1674-4926/32/8/083003

  Resonant tunnelling in nc-Si/SiO₂ multilayers at room temperature

  Chen Deyuan

  J. Semicond.  2011, 32(8): 083004
  doi: 10.1088/1674-4926/32/8/083004

  Preparation of Sn–Ag–In ternary solder bumps by electroplating in sequence and reliability

  Wang Dongliang, Yuan Yuan, Luo Le

  J. Semicond.  2011, 32(8): 083005
  doi: 10.1088/1674-4926/32/8/083005

• SEMICONDUCTOR DEVICES

  Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal–semiconductor–metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes

  Chen Bin, Yang Yintang, Chai Changchun, Song Kun, Ma Zhenyang

  J. Semicond.  2011, 32(8): 084001
  doi: 10.1088/1674-4926/32/8/084001

  Gate-enclosed NMOS transistors

  Fan Xue, Li Ping, Li Wei, Zhang Bin, Xie Xiaodong, Wang Gang, Hu Bin, Zhai Yahong

  J. Semicond.  2011, 32(8): 084002
  doi: 10.1088/1674-4926/32/8/084002

  Modeling of current mismatch induced by random dopant fluctuation in nano-MOSFETs

  Lü Weifeng, Sun Lingling

  J. Semicond.  2011, 32(8): 084003
  doi: 10.1088/1674-4926/32/8/084003

  Current–voltage characteristics of light-emitting diodes under optical and electrical excitation

  Wen Jing, Wen Yumei, Li Ping, Li Lian

  J. Semicond.  2011, 32(8): 084004
  doi: 10.1088/1674-4926/32/8/084004

  Antireflection properties and solar cell application of silicon nanoscructures

  Yue Huihui, Jia Rui, Chen Chen, Ding Wuchang, Wu Deqi, Liu Xinyu

  J. Semicond.  2011, 32(8): 084005
  doi: 10.1088/1674-4926/32/8/084005

  Electrode pattern design for GaAs betavoltaic batteries

  Chen Haiyang, Yin Jianhua, Li Darang

  J. Semicond.  2011, 32(8): 084006
  doi: 10.1088/1674-4926/32/8/084006

  Tunable filters based on an SOI nano-wire waveguide micro ring resonator

  Li Shuai, Wu Yuanda, Yin Xiaojie, An Junming, Li Jianguang, Wang Hongjie, Hu Xiongwei

  J. Semicond.  2011, 32(8): 084007
  doi: 10.1088/1674-4926/32/8/084007

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

  Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pang Lei, Liu Xinyu

  J. Semicond.  2011, 32(8): 085001
  doi: 10.1088/1674-4926/32/8/085001

  A 0.18 μm CMOS low noise amplifier using a current reuse technique for 3.1–10.6 GHz UWB receivers

  Wang Chunhua, Wan Qiuzhen

  J. Semicond.  2011, 32(8): 085002
  doi: 10.1088/1674-4926/32/8/085002

  A 14-bit wide temperature range differential SAR ADC with an on-chip multi-segment BGR

  Qiao Ning, Gao Jiantou, Zhao Kai, Yang Bo, Liu Zhongli, Yu Fang

  J. Semicond.  2011, 32(8): 085003
  doi: 10.1088/1674-4926/32/8/085003

  A 102-dB-SNR mixed CT/DT ΣΔADC with capacitor digital self-calibration for RC spread compensation

  Liu Yan, Hua Siliang, Wang Donghui, Hou Chaohuan

  J. Semicond.  2011, 32(8): 085004
  doi: 10.1088/1674-4926/32/8/085004

  A novel low-offset dynamic comparator for sub-1-V pipeline ADCs

  Yang Jinda, Wang Xianbiao, Li Li, Cheng Xu, Guo Yawei, Zeng Xiaoyang

  J. Semicond.  2011, 32(8): 085005
  doi: 10.1088/1674-4926/32/8/085005

  A 5 GHz CMOS frequency synthesizer with novel phase-switching prescaler and high-Q LC-VCO

  Cao Shengguo, Yang Yuqing, Tan Xi, Yan Na, Min Hao

  J. Semicond.  2011, 32(8): 085006
  doi: 10.1088/1674-4926/32/8/085006

  A fast transient response low dropout regulator with current control methodology

  Ma Zhuo, Guo Yang, Duan Zhikui, Xie Lunguo, Chen Jihua, Yu Jinshan

  J. Semicond.  2011, 32(8): 085007
  doi: 10.1088/1674-4926/32/8/085007

  A CMOS wideband front-end chip using direct RF sampling mixer with embedded discrete-time filtering

  Xu Jiangtao, Carlos E. Saavedra, Chen Guican

  J. Semicond.  2011, 32(8): 085008
  doi: 10.1088/1674-4926/32/8/085008

  A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

  Wang Honglai, Zhang Xiaoxing, Dai Yujie, Lü Yingjie, Toshimasa Matsuoka, Wang Jun, Kenji Taniguchi

  J. Semicond.  2011, 32(8): 085009
  doi: 10.1088/1674-4926/32/8/085009

  CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy

  Li Xin, Fu Jian, Huang Yumei, Hong Zhiliang

  J. Semicond.  2011, 32(8): 085010
  doi: 10.1088/1674-4926/32/8/085010

  A Ka-band 22 dBm GaN amplifier MMIC

  Wang Dongfang, Chen Xiaojuan, Yuan Tingting, Wei Ke, Liu Xinyu

  J. Semicond.  2011, 32(8): 085011
  doi: 10.1088/1674-4926/32/8/085011

  Design and implementation of a programming circuit in radiation-hardened FPGA

  Wu Lihua, Han Xiaowei, Zhao Yan, Liu Zhongli, Yu Fang, Stanley L. Chen

  J. Semicond.  2011, 32(8): 085012
  doi: 10.1088/1674-4926/32/8/085012

  A 5 Gb/s transceiver in 0.13 μm CMOS for PCIE2.0

  Luo Gang, Gao Changping, Zeng Xianjun

  J. Semicond.  2011, 32(8): 085013
  doi: 10.1088/1674-4926/32/8/085013

  Two different LNA optimizing techniques

  Qin Chuan, Chen Lan, Wu Yuping

  J. Semicond.  2011, 32(8): 085014
  doi: 10.1088/1674-4926/32/8/085014

  Regular FPGA based on regular fabric

  Chen Xun, Zhu Jianwen, Zhang Minxuan

  J. Semicond.  2011, 32(8): 085015
  doi: 10.1088/1674-4926/32/8/085015

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