Archive

Volume 35, Issue 1, Jan 2014

• SEMICONDUCTOR PHYSICS

  Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field

  N. Sahoo, T. Sahu

  J. Semicond.  2014, 35(1): 012001
  doi: 10.1088/1674-4926/35/1/012001

• SEMICONDUCTOR MATERIALS

  Optimal migration route of Cu in HfO₂

  Jinlong Lu, Jing Luo, Hongpeng Zhao, Jin Yang, Xianwei Jiang, Qi Liu, Xiaofeng Li, Yuehua Dai

  J. Semicond.  2014, 35(1): 013001
  doi: 10.1088/1674-4926/35/1/013001

  Analysis of the electronic structures of 3d transition metals doped CuGaS₂ based on DFT calculations

  Zongyan Zhao, Dacheng Zhou, Juan Yi

  J. Semicond.  2014, 35(1): 013002
  doi: 10.1088/1674-4926/35/1/013002

• SEMICONDUCTOR DEVICES

  A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

  Purnima Hazra, S. Jit

  J. Semicond.  2014, 35(1): 014001
  doi: 10.1088/1674-4926/35/1/014001

  P-type double gate junctionless tunnel field effect transistor

  M. W. Akram, Bahniman Ghosh, Punyasloka Bal, Partha Mondal

  J. Semicond.  2014, 35(1): 014002
  doi: 10.1088/1674-4926/35/1/014002

  Effect of active layer deposition temperature on the performance of sputtered amorphous In-Ga-Zn-O thin film transistors

  Jie Wu, Junfei Shi, Chengyuan Dong, Zhongfei Zou, Yuting Chen, Daxiang Zhou, Zhe Hu, Runze Zhan

  J. Semicond.  2014, 35(1): 014003
  doi: 10.1088/1674-4926/35/1/014003

  A first-principle investigation of the oxygen defects in Si₃N₄-based charge trapping memories

  Jing Luo, Jinlong Lu, Hongpeng Zhao, Yuehua Dai, Qi Liu, Jin Yang, Xianwei Jiang, Huifang Xu

  J. Semicond.  2014, 35(1): 014004
  doi: 10.1088/1674-4926/35/1/014004

  A novel optimization design for 3.3 kV injection-enhanced gate transistor

  Xiaoli Tian, Weili Chu, Jiang Lu, Shuojin Lu, Qiaoqun Yu, Yangjun Zhu

  J. Semicond.  2014, 35(1): 014005
  doi: 10.1088/1674-4926/35/1/014005

  Design of two-terminal PNPN diode for high-density and high-speed memory applications

  Xiaodong Tong, Hao Wu, Qingqing Liang, Huicai Zhong, Huilong Zhu, Chao Zhao, Tianchun Ye

  J. Semicond.  2014, 35(1): 014006
  doi: 10.1088/1674-4926/35/1/014006

  Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

  Zhen Yang, Jinyan Wang, Zhe Xu, Xiaoping Li, Bo Zhang, Maojun Wang, Min Yu, Jincheng Zhang, Xiaohua Ma, Yongbing Li

  J. Semicond.  2014, 35(1): 014007
  doi: 10.1088/1674-4926/35/1/014007

  Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs

  Chong Wang, Chong Chen, Yunlong He, Xuefeng Zheng, Xiaohua Ma, Jincheng Zhang, Wei Mao, Yue Hao

  J. Semicond.  2014, 35(1): 014008
  doi: 10.1088/1674-4926/35/1/014008

  A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer

  Wei Wu, Bo Zhang, Jian Fang, Xiaorong Luo, Zhaoji Li

  J. Semicond.  2014, 35(1): 014009
  doi: 10.1088/1674-4926/35/1/014009

  Research and optimization of the ESD response characteristic in a ps-LDMOS transistor

  Hao Wang, Siyang Liu, Weifeng Sun, Tingting Huang

  J. Semicond.  2014, 35(1): 014010
  doi: 10.1088/1674-4926/35/1/014010

  An InGaAs graded buffer layer in solar cells

  Xiaosheng Qu, Hongyin Bao, Hanieh. S. Nikjalal, Liling Xiong, Hongxin Zhen

  J. Semicond.  2014, 35(1): 014011
  doi: 10.1088/1674-4926/35/1/014011

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A high gain wide dynamic range transimpedance amplifier for optical receivers

  Lianxi Liu, Jiao Zou, Yunfei En, Shubin Liu, Yue Niu, Zhangming Zhu, Yintang Yang

  J. Semicond.  2014, 35(1): 015001
  doi: 10.1088/1674-4926/35/1/015001

  A new wideband LNA using a g_m-boosting technique

  Liang Chen, Zhiqun Li, Jia Cao, Chenjian Wu, Meng Zhang

  J. Semicond.  2014, 35(1): 015002
  doi: 10.1088/1674-4926/35/1/015002

  A 4 GHz CMOS multiplier for sigma-delta modulated signals

  Xiaodan Guo, Qiao Meng, Yong Liang

  J. Semicond.  2014, 35(1): 015003
  doi: 10.1088/1674-4926/35/1/015003

  A low phase noise and low spur PLL frequency synthesizer for GNSS receivers

  Sen Li, Jinguang Jiang, Xifeng Zhou, Jianghua Liu

  J. Semicond.  2014, 35(1): 015004
  doi: 10.1088/1674-4926/35/1/015004

  Design of ultralow power receiver front-ends for 2.4 GHz wireless sensor network applications

  Meng Zhang, Zhiqun Li, Zengqi Wang, Chenjian Wu, Liang Chen

  J. Semicond.  2014, 35(1): 015005
  doi: 10.1088/1674-4926/35/1/015005

  A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

  Dong Yan, Luhong Mao, Qiujie Su, Sheng Xie, Shilin Zhang

  J. Semicond.  2014, 35(1): 015006
  doi: 10.1088/1674-4926/35/1/015006

  A 6-18 GHz broadband power amplifier MMIC with excellent efficiency

  Yifeng Chen, Jinhai Quan, Yungang Liu, Liulin Hu

  J. Semicond.  2014, 35(1): 015007
  doi: 10.1088/1674-4926/35/1/015007

  Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional integrated chips

  Xiaoxian Liu, Zhangming Zhu, Yintang Yang, Fengjuan Wang, Ruixue Ding

  J. Semicond.  2014, 35(1): 015008
  doi: 10.1088/1674-4926/35/1/015008

  A low-leakage and NBTI-mitigated N-type domino logic

  Huaguo Liang, Hui Xu, Zhengfeng Huang, Maoxiang Yi

  J. Semicond.  2014, 35(1): 015009
  doi: 10.1088/1674-4926/35/1/015009

  A 130 nm radiation hardened flip-flop with an annular gate and a C-element

  Lei Wang, Jianhua Jiang, Yiming Xiang, Yumei Zhou

  J. Semicond.  2014, 35(1): 015010
  doi: 10.1088/1674-4926/35/1/015010

  A programmable MDAC with power scalability

  Shubin Liu, Zhangming Zhu, Yintang Yang, Lianxi Liu

  J. Semicond.  2014, 35(1): 015011
  doi: 10.1088/1674-4926/35/1/015011

• SEMICONDUCTOR TECHNOLOGY

  Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration

  Yan Li, Yuling Liu, Xinhuan Niu, Xiaofeng Bu, Hongbo Li, Jiying Tang, Shiyan Fan

  J. Semicond.  2014, 35(1): 016001
  doi: 10.1088/1674-4926/35/1/016001

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