J. Semicond. 2014, 35(1): 012001
doi: 10.1088/1674-4926/35/1/012001
Optimal migration route of Cu in HfO2
J. Semicond. 2014, 35(1): 013001
doi: 10.1088/1674-4926/35/1/013001
Analysis of the electronic structures of 3d transition metals doped CuGaS2 based on DFT calculations
J. Semicond. 2014, 35(1): 013002
doi: 10.1088/1674-4926/35/1/013002
A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation
J. Semicond. 2014, 35(1): 014001
doi: 10.1088/1674-4926/35/1/014001
P-type double gate junctionless tunnel field effect transistor
J. Semicond. 2014, 35(1): 014002
doi: 10.1088/1674-4926/35/1/014002
J. Semicond. 2014, 35(1): 014003
doi: 10.1088/1674-4926/35/1/014003
A first-principle investigation of the oxygen defects in Si3N4-based charge trapping memories
J. Semicond. 2014, 35(1): 014004
doi: 10.1088/1674-4926/35/1/014004
A novel optimization design for 3.3 kV injection-enhanced gate transistor
J. Semicond. 2014, 35(1): 014005
doi: 10.1088/1674-4926/35/1/014005
Design of two-terminal PNPN diode for high-density and high-speed memory applications
J. Semicond. 2014, 35(1): 014006
doi: 10.1088/1674-4926/35/1/014006
Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress
J. Semicond. 2014, 35(1): 014007
doi: 10.1088/1674-4926/35/1/014007
Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs
J. Semicond. 2014, 35(1): 014008
doi: 10.1088/1674-4926/35/1/014008
A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer
J. Semicond. 2014, 35(1): 014009
doi: 10.1088/1674-4926/35/1/014009
Research and optimization of the ESD response characteristic in a ps-LDMOS transistor
J. Semicond. 2014, 35(1): 014010
doi: 10.1088/1674-4926/35/1/014010
An InGaAs graded buffer layer in solar cells
J. Semicond. 2014, 35(1): 014011
doi: 10.1088/1674-4926/35/1/014011
A high gain wide dynamic range transimpedance amplifier for optical receivers
J. Semicond. 2014, 35(1): 015001
doi: 10.1088/1674-4926/35/1/015001
A new wideband LNA using a gm-boosting technique
J. Semicond. 2014, 35(1): 015002
doi: 10.1088/1674-4926/35/1/015002
A 4 GHz CMOS multiplier for sigma-delta modulated signals
J. Semicond. 2014, 35(1): 015003
doi: 10.1088/1674-4926/35/1/015003
A low phase noise and low spur PLL frequency synthesizer for GNSS receivers
J. Semicond. 2014, 35(1): 015004
doi: 10.1088/1674-4926/35/1/015004
Design of ultralow power receiver front-ends for 2.4 GHz wireless sensor network applications
J. Semicond. 2014, 35(1): 015005
doi: 10.1088/1674-4926/35/1/015005
A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology
J. Semicond. 2014, 35(1): 015006
doi: 10.1088/1674-4926/35/1/015006
A 6-18 GHz broadband power amplifier MMIC with excellent efficiency
J. Semicond. 2014, 35(1): 015007
doi: 10.1088/1674-4926/35/1/015007
J. Semicond. 2014, 35(1): 015008
doi: 10.1088/1674-4926/35/1/015008
A low-leakage and NBTI-mitigated N-type domino logic
J. Semicond. 2014, 35(1): 015009
doi: 10.1088/1674-4926/35/1/015009
A 130 nm radiation hardened flip-flop with an annular gate and a C-element
J. Semicond. 2014, 35(1): 015010
doi: 10.1088/1674-4926/35/1/015010
A programmable MDAC with power scalability
J. Semicond. 2014, 35(1): 015011
doi: 10.1088/1674-4926/35/1/015011